WO2020200442A1

WO2020200442A1 - Sputter deposition source, sputter deposition apparatus, and method of powering a sputter deposition source

Info

Publication number: WO2020200442A1
Application number: PCT/EP2019/058414
Authority: WO
Inventors: Joachim Sonnenschein; Willi Sauer; Daniel SCHÄFER-KOPYTTO; Tobias Bergmann
Original assignee: Applied Materials, Inc.
Priority date: 2019-04-03
Filing date: 2019-04-03
Publication date: 2020-10-08
Also published as: CN113661558B; CN113661558A; KR102648667B1; KR20210143913A

Abstract

A sputter deposition source (100) is described. The sputter deposition source includes a first sputter electrode (110) and a power supply assembly (130) for supplying the first sputter electrode with an electric current. The power supply assembly includes a cable (131) with a 5 plurality of insulated cores (132) surrounded by a common jacket (133). The cable may optionally further include a shielding arrangement (140). Further, a sputter deposition apparatus (200) is described, including two adjacent sputter electrodes that can be supplied with alternating currents via a cable including a plurality of insulated cores.

Description

SPUTTER DEPOSITION SOURCE, SPUTTER DEPOSITION APPARATUS, AND METHOD OF POWERING A SPUTTER DEPOSITION SOURCE

TECHNICAE FIEED

[0001] Embodiments of the present disclosure relate to layer deposition, particularly to layer deposition by sputering, such as DC sputering, MF sputering, or RF sputtering. Specifically, embodiments relate to a sputter deposition source and a sputter deposition apparatus for depositing layers by sputtering. Embodiments of the present disclosure particularly relate to a sputter deposition source, a sputter deposition apparatus, and methods of powering sputter deposition sources.

BACKGROUND

[0002] Several methods are known for depositing a material on a substrate. For instance, substrates can be coated by a physical vapor deposition (PVD) process, such as sputtering, a chemical vapor deposition (CVD) process, or a plasma enhanced chemical vapor deposition (PECVD) process. Typically, the process is performed in a deposition apparatus including a vacuum chamber, where the substrate to be coated is located. A deposition material is provided in the apparatus. The deposition material may be sputtered from a sputter target provided at a sputter electrode toward the substrate to be coated. A plurality of materials may be used for deposition on a substrate by sputtering. Among them, many different metals can be used, but also oxides, nitrides or carbides. Typically, a sputer process is suitable for thin film coatings.

[0003] Coated substrates can be used in several applications and in several technical fields. For instance, an application lies in the field of microelectronics, such as generating semiconductor devices. Also, substrates for displays are often coated by a sputter process, wherein large area substrates having an area of 1 m² or more can be coated.

[0004] For processing large area substrates, for example, in the display industry, dynamic deposition processes can be used wherein the substrate is moved past a sputer deposition source including an array of sputter electrodes. Other substrate processing applications utilize a static deposition process in which the substrate is positioned in a vacuum processing area on a front side of an array of sputter electrodes of a deposition source. The deposition source may include at least one sputter electrode, e.g. a sputter cathode carrying a sputter target, or an array of sputter electrodes that are powered with a direct current (DC) or with an alternating current (AC), respectively.

[0005] The at least one sputter electrode is typically supplied with a high current during sputtering, e.g. a current in the range of several tens of amperes. The current may be a direct current (DC) in the case of DC sputtering, or the current may be an alternating current (AC), e.g. in the case of radio frequency (RF) sputtering or mid-frequency (MF) sputtering. AC sputtering has advantages over DC sputtering, e.g. if non-conductive targets are to be used for sputtering.

[0006] It may be challenging to supply a sputter electrode of a sputter deposition source with a high current via a supply cable, e.g. because high currents may lead to undesired electric or magnetic fields in the surroundings of the supply cable which may negatively affect other components, e.g. electric motors. Disturbing electromagnetic fields may particularly be generated in the case of AC sputtering utilizing high alternating currents. Further, there may be a risk of charge accumulation in the surroundings of a supply cable.

[0007] A supply cable having a large-diameter conductive core suitable for the transmission of high current may be stiff and, therefore, difficult to handle. On the other hand, if a plurality of separate supply cables is used for supplying a sputter electrode with a high current, there may be problems with electromagnetic interference and shielding. Further, laying a plurality of cables is time-consuming, and maintenance is difficult.

[0008] In light thereof, it would be beneficial to provide a sputter deposition source and a sputter deposition apparatus with an improved power supply assembly configured for supplying a sputter electrode with an electric current. Specifically, handling of the power supply assembly should be facilitated, and accurate current values should be delivered to the sputter electrode without negatively affecting the environment of the power supply assembly due to electromagnetic interference. SUMMARY

[0009] In light of the above, a sputter deposition source, a sputter deposition apparatus and methods of powering a sputter deposition source are provided. Further aspects, advantages, and features of the present disclosure are apparent from the dependent claims, the description, and the accompanying drawings.

[0010] According to one aspect, a sputter deposition source is provided. The sputter deposition source includes a first sputter electrode and a power supply assembly for supplying the first sputter electrode with an electric current. The power supply assembly includes a cable with a plurality of insulated cores surrounded by a common jacket. [0011] According to one aspect, a sputter deposition apparatus is provided. The sputter deposition apparatus includes a vacuum chamber and an array of sputter electrodes arranged at least partially inside the vacuum chamber, the array including a first sputter electrode and a second sputter electrode which may be arranged adjacent to the first sputter electrode. The sputter deposition source further includes a power supply assembly for supplying the first sputter electrode and the second sputter electrode with an alternating current, respectively, particularly with an MF current or an RF current. The power supply assembly includes a cable with a plurality of insulated cores surrounded by a common jacket.

[0012] According to embodiments described herein, a first subset of the plurality of insulated cores is electrically connected to the first sputter electrode and a second subset of the plurality of insulated cores is electrically connected to the second sputter electrode. Out- of-phase alternating currents can be supplied via the first subset and the second subset, such that the first sputter electrode and the second sputter electrode alternately act as anode and cathode.

[0013] According to some embodiments described herein, the sputter electrodes are rotatable.

[0014] According one aspect, a method of powering a sputter deposition source is described. The method includes supplying a first sputter electrode with an electric current through a cable, the cable including a plurality of insulated cores surrounded by a common jacket.

[0015] According to some embodiments described herein, two or more insulated cores of the plurality of insulated cores are electrically connected to the first sputter electrode. [0016] According to one aspect, a method of powering a sputter deposition source is described. The method includes supplying a first sputter electrode and a second sputter electrode of an array of sputter electrodes with an alternating current (AC) through a cable with a plurality of insulated cores surrounded by a common jacket. A first subset of the plurality of insulated cores may be electrically connected to the first sputter electrode and a second subset of the plurality of insulated cores may be electrically connected to the second sputter electrode.

[0017] According to some embodiments, the alternating currents are MF currents or RF currents.

[0018] Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. The methods for operating the described apparatus include method aspects for carrying out every function of the apparatus.

BRIEF DESCRIPTION OF THE DRAWINGS

[0019] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and are described in the following:

FIG. 1 shows a schematic sectional view of a sputter deposition source according to embodiments of the present disclosure; FIG. 2 shows a schematic perspective view of a sputter deposition source according to embodiments of the present disclosure;

FIG. 3 shows a schematic cross-sectional view of a cable of a sputter deposition source according to embodiments of the present disclosure;

FIG. 4 shows a schematic sectional view of a sputter deposition apparatus according to embodiments of the present disclosure;

FIG. 5 shows a flow chart illustrating a method of powering a sputter deposition source according to embodiments of the present disclosure; and

FIG. 6 shows a flow chart illustrating a method of powering a sputter deposition source according to embodiments of the present disclosure.

DETAILED DESCRIPTION [0020] Reference will now be made in detail to the various embodiments of the disclosure, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided by way of explanation of the disclosure and is not meant as a limitation. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations.

[0021] FIG. 1 is a schematic sectional view of a sputter deposition source 100 according to embodiments described herein. The sputter deposition source 100 includes a first sputter electrode 110 which may optionally be rotatable around a rotation axis (A), and a power supply assembly 130 for supplying the first sputter electrode with an electric current (I). In some embodiments, the sputter deposition source 100 may include an array of sputter electrodes, e.g. two, four, eight, twelve or more sputter electrodes, which may be rotatable. The first sputter electrode 110 may be one electrode of the array of sputter electrodes, and the other sputter electrodes may be arranged next to the first sputter electrode in an essentially linear array or in a curved array.

[0022] In some embodiments, a magnet assembly 165, particularly a magnetron, may be arranged inside the first sputter electrode 110. The magnet assembly 165 may be configured to confine a sputter plasma in a predetermined space region in front of the first sputter electrode 110. The magnet assembly 165 may be movable, particularly rotatable around an axis, more particularly rotatable around the rotation axis (A).

[0023] The sputter deposition source 100 may be configured for DC sputering or for AC sputtering, e.g. RF sputtering or MF sputtering. Specifically, the power supply assembly 130 may be adapted for transmitting a direct current to the first sputter electrode and/or for transmitting an alternating current to the first sputter electrode, e.g. an MF current and/or an RF current.

[0024] In some embodiments, the power supply assembly 130 may be configured for supplying the first sputter electrode 110 with a high current, e.g. 10 A or more and/or 200 A or less, particularly 50 A or more and/or 150 A or less. A high current may be beneficial for igniting and maintaining a plasma in front of the first sputer electrode which is used for sputtering from a sputter target that is provided at the first sputter electrode.

[0025] According to embodiments described herein, the power supply assembly 130 includes a cable 131 that guides the electric current at least in sections to the first sputter electrode 110. The cable 131 includes a plurality of insulated cores 132 that are surrounded by a common jacket 133. In other words, the cable is a multicore cable including a plurality of cores which are respectively surrounded by a dielectric layer or insulation layer. The cores may be single wire cores or may alternatively be multistranded wires including a plurality of wires or conductors which are surrounded by a dielectric layer or insulation layer.

[0026] The plurality of insulated cores 132 is in turn surrounded by a common jacket which forms a cable sheath protecting the insulated cores and holding the plurality of insulated cores together in the form of the cable. In one embodiment, each core comprises a plurality of conductors, e.g. four or more conductors which may be stranded. The plurality of conductors of the core may be surrounded by an insulation, e.g. a polymer, to form an insulated core.

[0027] Since the cable 131 includes the plurality of insulated cores 132, the cable is more flexible and easier to handle than a cable with one single large-diameter core. At the same time, high currents can be transmitted through the plurality of insulated cores in combination. In some embodiments, at least two insulated cores of the cable, particularly three or more insulated cores are electrically connected to the first sputter electrode 110 to supply the first electrode with an electric current. Each insulated core may be adapted for the transmission of a current of 10 A or more, particularly 30 A or more, more particularly 50 A or more. Accordingly, the first sputter electrode, being electrically connected to two, three or more insulated cores, can be supplied with a current of 50 A or more, particularly 100 A or more.

[0028] In some embodiments, the plurality of insulated cores 132 includes two or more insulated cores, particularly three or more insulated cores, more particularly four or more insulated cores, or even six or more insulated cores.

[0029] In some embodiments, all cores of the plurality of insulated cores are electrically connected to the first sputter electrode 110. For example, the first sputter electrode 110 may be supplied with a direct current or with an alternating current through all the cores of the plurality of insulated cores. In other embodiments, a first subset of the plurality of insulated cores is electrically connected to the first sputter electrode, and a second subset of the plurality of insulated cores may be electrically connected to a second sputter electrode, as will be explained in further detail later.

[0030] One cable having a plurality of insulated cores is easier to handle and easier to lay than a plurality of separate cables which are not surrounded by a jacket holding together the plurality of insulated cores. Further, the mutual arrangement of the plurality of insulated cores inside the jacket may be fixed by the jacket, providing a compact conductor arrangement, reducing the electromagnetic radiation, and facilitating the shielding of the plurality of insulated cores. [0031] In some embodiments, which may be combined with other embodiments described herein, the cable 131 includes a shielding arrangement 140 for shielding the plurality of insulated cores. By providing a shielding arrangement 140 extending along the length of the cable 131, the influence of electromagnetic radiation in the surroundings of the cable can be reduced. Accordingly, other components, such as electric motors, arranged in the surroundings of the cable 131 are negatively affected to a lesser extent. Further, more accurate current values can be transmitted to the first sputter electrode by the cable.

[0032] In the exemplary embodiments of FIG. 1, the shielding arrangement 140 includes a common shield, e.g. a mesh or braid, surrounding all insulated cores of the plurality of insulated cores 132. For example, the cable 131 may include a braiding which surrounds the plurality of insulated cores 132 and which is in turn surrounded by the common jacket 133. Alternatively or additionally, the plurality of insulated cores may include individual shielding sleeves. For example, each core may be surrounded by a dielectric layer which is in turn surrounded by a shielding layer, e.g. a mesh or braid. [0033] In some embodiments, the shielding arrangement includes a plurality of shielding layers sheathing the insulated cores of the plurality of insulated cores individually. For example, the cable depicted in FIG. 3 includes a plurality of insulated cores 132 which are respectively surrounded by a shielding layer shielding the plurality of insulated cores individually, e.g. a plurality of meshes or braids. Optionally, the plurality of shielded and insulated cores may additionally be surrounded by a common shielding layer.

[0034] In some embodiments, which may be combined with other embodiments described herein, the shielding arrangement 140 is grounded, particularly via a grounding connection 145 connected directly or indirectly to a vacuum chamber 101 at a grounding position 146. For example, the jacket of the cable 131 may be removed at a distal end portion of the cable 131, uncovering the shielding arrangement 140, such that the shielding arrangement can be grounded via the grounding connection 145. The grounding connection 145 connects the shielding arrangement to a ground potential. Grounding the shielding arrangement 140 via the grounding connection 145 to the vacuum chamber 101 may be beneficial, since a common ground potential can be ensured. For example, in DC sputtering, the grounded vacuum chamber may act as a counter-electrode or as a reference potential for the at least one sputter electrode 110.

[0035] The“distal end” of the cable (or of the jacket) as used herein refers to the end closer to the first sputter electrode, and the“proximal end” of the cable (or of the jacket) as used herein typically refers to the end closer to the power source.

[0036] According to embodiments, which may be combined with other embodiments described herein, a first distance (Dl) between the grounding position 146 and a main shaft of the first sputter electrode 110 may be 30 cm or less, particularly 15 cm or less, or even 10 cm or less. In other words, the shielding arrangement 140 of the cable may be grounded at a position very close to the first sputter electrode 110. Specifically, the distal end of the jacket 133 of the cable where the shielding arrangement 140 exits the jacket 133 may be located close to the first sputter electrode 110, and the cable 131 including the shielding arrangement shielding the plurality of insulated cores 132 may extend to a position close to the first sputter electrode 110. Electromagnetic radiation may be reduced, since only a short portion of the power supply assembly 130 close to the first sputter electrode 110 may be without shielding.

[0037] In some embodiments, the power supply assembly 130 includes a power connector 151 for applying the electric current (I) to a movable portion of the first sputter electrode 110 which may be rotatable. The power connector 151 may include one or more brushes for transmitting the electric current (I) from a stationary conductor to the movable portion of the first sputter electrode 110. A connection block 139 or clamping block may be arranged at the distal end of the cable, connecting the distal ends of the plurality of insulated cores to the power connector 151.

[0038] The distance between the distal end of the cable and first sputter electrode may be 30 cm or less, particularly 15 cm or less. In other words, the connection block 139 for the power transmission from the cable to the power connector may be arranged as close as possible to the main shaft of the first sputter electrode. A portion where the power supply assembly 130 is unshielded can be kept very short. [0039] In some embodiments, the power supply assembly 130 further includes a power source 150 for providing the electric current (I), particularly a direct current (DC) and/or an alternating current (AC), such as an (MF) current and/or an (RF) current. The cable 131 may extend over 50% or more, particularly 80% or more, more particularly 90% or more of a power connection path from the power source 150 to the power connector 151.

[0040] Specifically, the cable 131 may extend over a major part of the power connection path, and there may be no need for an additional shielded junction box in which a common power cable supplying the electric current from the power source is connected to a customized set of special flexible power cables transmitting the electric current toward the first sputter electrodes. Rather, according to embodiments described herein, the cable 131 may be suitable for current transmission from the power source 150 through to a position close to the first sputter electrode 110 where the connection block 139 to the power connector 151 is arranged. Maintenance can be facilitated, and a power supply assembly is provided that is less complex and is easier to fabricate and connect. Specifically, a customized set of separate flexible power cables may no longer be used for powering the first sputter electrode.

[0041] In some embodiments, the connection block 139 or clamping block for connecting the plurality of insulated cores 132 exiting from a distal end of the jacket 133 to the power connector 151 may be arranged close to a main shaft of the first sputter electrode 110, particularly at a distance of 30 cm or less or 15 cm or less from the main shaft. [0042] As is depicted in FIG. 1, a second distance (D2) between the distal end 134 of the jacket 133 and the first sputter electrode 110 may be 30 cm or less, particularly 15 cm or less.

[0043] In some embodiments, which may be combined with other embodiments described herein, two, three or more insulated cores of the plurality of insulated cores 132 are electrically connected to the first sputter electrode 110, particularly via a power connector 151 which may include several brushes. Accordingly, the electric current that is to be supplied to the first sputter electrode 110 can be distributed over several insulated cores of the cable, such that high currents can be transmitted while maintaining a high flexibility of the cable. [0044] In some implementations, the plurality of insulated cores 132 of the cable 131 is stranded. In particular, the plurality of insulated cores 132 has a helical progression around a center of the cable.

[0045] FIG. 2 is a schematic perspective view of a sputter deposition source 100 according to embodiments described herein. The sputter deposition source of FIG. 2 essentially corresponds to the sputter deposition source of FIG. 1, such that reference can be made to the above explanations, which are not repeated here.

[0046] As is depicted in FIG. 2, the sputter deposition source 100 includes a first sputter electrode 110 which may be rotatable around a rotation axis (A). A first drive 161 may be provided for rotating the first sputter electrode 110 around the rotation axis (A). The first drive 161 may include an electric motor.

[0047] In some embodiments, a magnet assembly 165 (not depicted in FIG. 2) is arranged inside the first sputter electrode. The first sputter electrode may have an essentially cylindrical shape. The magnet assembly 165 may be movable, particularly rotatable, more particularly rotatable around the rotation axis (A). A second drive 162 may be provided for moving the magnet assembly 165 inside the first sputter electrode 110. The second drive 162 may include an electric motor 163, particularly a servomotor. A servomotor may be beneficial for ensuring an exact placement and movement of the magnet assembly 165, e.g. in a split-sputter mode or in a wobbling mode in which the magnet assembly 165 moves along a predetermined trajectory during sputtering. An electric motor, particularly a servomotor, may be susceptible to interference by electromagnetic fields that may negatively affect the placement accuracy of the magnet assembly.

[0048] As is further depicted in FIG. 2, an upper part of the first sputter electrode 110 may be arranged inside a vacuum chamber 101, and a lower part of the first sputter electrode 110 may be arranged outside the vacuum chamber 101, e.g. below a bottom wall of the vacuum chamber 101. The first sputter electrode 110 may extend through a wall of the vacuum chamber 101, e.g. via a feedthrough allowing a rotation of the first sputter electrode 110. Sputtering may take place inside the vacuum chamber 101, i.e. in front of the upper part of the first sputter electrode. The lower part of the first sputter electrode 110 (also referred to as “electrode drive” or“cathode drive”) may be driven in rotation by the first drive 161 outside the vacuum chamber and/or may be powered by a power connector 151 outside the vacuum chamber. The power connector 151 may be electrically connected to a distal end of the cable 131 via a connection block 139, particularly to distal ends of at least some of the plurality of insulated cores 132 of the cable.

[0049] The cable 131 includes a plurality of insulated cores 132 surrounded by a common jacket 133, particularly four, six or more insulated cores 132 which may optionally be stranded. In particular, the insulated cores 132 may have a helical progression around a center of the cable. Further, the cable 131 may include a shielding arrangement 140, particularly a metal braiding, which may be grounded. Specifically, the shielding arrangement 140 may be electrically connected to the vacuum chamber 101 at a grounding position 146. The grounding position 146 may be located close to the first sputter electrode 110, e.g. at a distance of 30 cm or less from the first sputter electrode. For further details, reference is made to the above explanations, which are not repeated here. [0050] In some embodiments, which may be combined with other embodiments described herein, the distance between the electric motor 163 of the second drive 162 and a distal end 134 of the jacket 133 of the cable is 20 cm or more, particularly 40 cm or more and/or 1 m or less. In other words, the distal end of the cable where the plurality of insulated cores leaves the jacket 133 of the cable may be located far away from the electric motor 163. Electromagnetic interference can be reduced, and the risk of a disturbance of the electric motor 163, which may be a servomotor, by the electric current powering the first sputter electrode can be decreased.

[0051] The cable 131 can be a low-inductance cable extending to a position close to the power connector 151, such that electromagnetic interference caused by the electric current (I) flowing along the plurality of insulated cores can be kept low. The distance between an unshielded portion of the plurality of insulated cores 132 and the electric motor 163 can be kept large, such that the risk of the electric motor 163 and the electric current (I) negatively influencing each other is decreased. [0052] FIG. 3 shows a schematic cross-sectional view of a cable 131 of a sputter deposition source according to embodiments of the present disclosure. The cable 131 of FIG. 3 may be used in any of the sputter deposition sources or sputter deposition apparatuses described herein. [0053] The cable 131 includes a plurality of insulated cores 132 which are surrounded by a common jacket 133 (also referred to herein as“jacket”). For example, four, six or more insulated cores may be provided. The cable 131 may further comprise a shielding arrangement 141 shielding the plurality of insulated cores 132. For example, the shielding arrangement 141 may include a plurality of shields sheathing the insulated cores of the plurality of insulated cores 132 individually. Alternatively or additionally, a common shield surrounding all insulated cores may be provided. The shielding arrangement 141 is depicted in FIG. 3 as dashed lines surrounding the insulated cores. The shielding layer surrounding an insulated core may be a braiding, e.g. a braiding of copper wires which may be tinned.

[0054] The plurality of insulated cores 132 may be stranded. In particular, the insulated cores may be wound around a center (C) of the cable, e.g. in a helical progression or twisting. Electromagnetic interference and/or cross-talk can be reduced.

[0055] The cable 131 may optionally include a plurality of filler elements which may fill otherwise unused spaces of the cable. For example, filler elements may be at least partially arranged between the insulated cores and/or at a position in the cable center. In the embodiment depicted in FIG. 3, the plurality of insulated cores are wound or twisted around a central filler element arranged at the center (C) of the cable. A plurality of further filler elements arranged between two adjacent insulated cores, respectively, may be wound around the central filler element together with the insulated cores. A predetermined arrangement of insulated cores inside the jacket can be ensured by the filler elements. [0056] The jacket 133 may include a dielectric polymer. An outer diameter of the cable may be 20 mm or more and/or 50 mm or less. A sectional area of each of the cores may be 5 mm² or more and/or 10 mm² or less. [0057] In some embodiments, which may be combined with other embodiments described herein, the cable 131 may be configured for transmitting an alternating current (AC). In particular, the cable may be configured for supplying an alternating current to the first sputter electrode and an alternating current to the second sputter electrode arranged adjacent to the first sputter electrode, such that the first sputter electrode and the second sputter electrode alternately act as anode and cathode.

[0058] In some implementations, which may be combined with other implementations, a first subset 231 of the plurality of insulated cores 132 of the cable may be electrically connected to the first sputter electrode and a second subset 232 of the plurality of insulated cores 132 of the cable may be electrically connected to a second sputter electrode arranged adjacent to the first sputter electrode. The cores of the first subset 231 and of the second subset 232 are depicted with different shadings in FIG. 3. For example, the cable 131 may have n insulated cores, n being an even integer, such as 4, 6, or 8. A first half of the insulated cores may be electrically connected to the first electrode, and a second half of the insulated cores may be electrically connected to the second electrode. Accordingly, the first electrode and the second electrode may alternately act as anode and cathode when alternating currents having an inverse phase are transmitted over the first subset 231 and the second subset 232. In other words, when a positive potential is applied to the first sputter electrode, a negative voltage is applied to the second sputter electrode, and vice versa. The second sputter electrode acts as the counter-electrode of the first sputter electrode, alternating currents of inverse phase being applied to the first and second sputter electrodes.

[0059] In some embodiments, which may be combined with other embodiments described herein, the insulated cores of the first subset 231 and the insulated cores of the second subset 232 are alternately arranged around the center (C) of the cable. In other words, insulated cores that are arranged adjacent to an insulated core of the first subset belong to the second subset of insulated cores, as is schematically depicted in FIG. 3. When alternating currents having an inverse phase are transmitted via the first and second subsets, electromagnetic interference can be reduced and/or cross-talk can be decreased. If the plurality of insulated cores is additionally stranded around the center (C) of the cable, electromagnetic radiation and crosstalk can be further reduced and an improved rejection of external electromagnetic interference can be provided.

[0060] FIG. 4 shows a schematic sectional view of a sputter deposition apparatus 200 according to embodiments described herein. The sputter deposition apparatus 200 may include a sputter deposition source according to any of the embodiments described herein, such that reference can be made to the above explanations, which are not repeated here.

[0061] The sputter deposition apparatus 200 of FIG. 4 includes a vacuum chamber 101 and an array of sputter electrodes which may be rotatable, the array including a first sputter electrode 110 and a second sputter electrode 111 arranged adjacent to the first sputter electrode 110. The array may include further sputter electrodes, e.g. four or more, or eight or more sputter electrodes.

[0062] The sputter deposition apparatus 200 further includes a power supply assembly 130 for supplying the first sputter electrode 110 and the second sputter electrode 111 with an alternating current, respectively, particularly with an MF current and/or an RF current. The power supply assembly 130 includes a cable 131 with a plurality of insulated cores 132 surrounded by a common jacket 133. The cable 131 may be similar to or correspond to the cable described above with reference to FIG. 3.

[0063] A first subset of 231 of the plurality of insulated cores 132 may be electrically connected to the first sputter electrode 110, and a second subset 232 of the plurality of insulated cores 132 may be electrically connected to the second sputter electrode 111. The first subset 231 may be connected to a first output of a power source 150, and the second subset may be connected to a second output of the power source 150. Alternating currents of different phases may be provided by the first output and the second output of the power source 150, e.g. sinusoidal currents being out of phase, e.g. by 180°, or bipolar pulsed currents being out of phase, e.g. by 180°. In other words, when the first output is provided on a positive potential, the second output may be provided on a negative potential, and vice versa. Accordingly, when the first sputter electrode 110 and the second sputter electrode 111 are electrically connected to the first output and the second output of the power source 150 via the first and second subsets of the cable, the first sputter electrode 110 and the second sputter electrode 111 may alternately act as an anode and as a respective cathode of the anode. At least one of an RF sputter process, an MF sputter process, and a bipolar pulsed sputter process can be provided.

[0064] In the embodiment depicted in FIG. 4, three insulated cores of the cable 131 are electrically connected to the first sputter electrode 110, e.g. via a first power connector including one or more brushes, and the other three insulated cores of the cable 131 are electrically connected to the second sputter electrode 111, e.g. via a second power connector including one or more brushes.

[0065] The distal end of the cable is arranged close to the first sputter electrode and/or close to the second sputter electrode, such that electromagnetic interference can be kept low.

[0066] The cable 131 may include a shielding arrangement 140 shielding the plurality of insulated cores, the shielding arrangement being grounded via a grounding connection 145 connecting the shielding arrangement 140 to the vacuum chamber 101.

[0067] During sputtering, a substrate 10 can be moved past the array of sputter electrodes, while the array of sputter electrodes is supplied with alternating currents, adjacent sputter electrodes periodically acting as anode and cathode, respectively, and as cathode and anode, respectively. Alternatively, a substrate can be static during sputtering and can be placed in front of the array of sputter electrodes. The magnet assemblies may move inside the sputter electrodes during sputtering, e.g. in an angular range from -30° to +30° with respect to a center angular position, for depositing a layer with a uniform thickness on the substrate.

[0068] The sputter deposition apparatus may include a plurality of cables as described herein. For example, two adjacent sputter electrodes may be supplied via a respective cable, as is schematically depicted in FIG. 4. One power supply may be connected to several cables, or, alternatively, each cable may be supplied via a respective power supply. [0069] In some embodiments, one or more sputter electrodes may be connected to a subset of insulated cores of two cables, the subsets being supplied with the same current, e.g. connected to the same output of a power supply. Such an arrangement is depicted in dashed lines in FIG. 4, showing the second and third sputter electrodes connected to two adjacent cables.

[0070] By alternately arranging the insulated cores of the first subset 231 and of the second subset 232 around the center of the respective cable, electromagnetic interference and crosstalk can be further reduced.

[0071] According to another aspect described herein, a method of powering a sputter deposition source is provided.

[0072] FIG. 5 is a flow diagram showing a first method of powering a sputter deposition source, including, in box 510, supplying a first sputter electrode with an electric current through a cable with a plurality of insulated cores surrounded by a common jacket.

[0073] A subset of the plurality of insulated cores of the cable or - alternatively - all insulated cores of the plurality of insulated cores of the cable may be electrically connected to the first sputter electrode, e.g. via a power connector including one or more brushes for applying the electric current to a movable part of the first sputter electrode. For example, two, three, or six insulated cores of the cable may be electrically connected to the first sputter electrode via two or more brushes.

[0074] The cable may include a shielding arrangement shielding the plurality of insulated cores and extending along the length of the cable. The shielding arrangement may be grounded, particularly via a grounding connection to a vacuum chamber at a grounding position. The grounding position may be positioned near the first sputter electrode.

[0075] A DC current or an AC current may be supplied to the first sputter electrode via the plurality of insulated cores.

[0076] In optional box 520, a plasma is ignited on one side of the powered sputter electrode, and material is sputtered from a sputter target of the sputter electrode toward a substrate for coating the substrate.

[0077] FIG. 6 is a flow diagram showing a second method of powering a sputter deposition source, including, in box 610, supplying a first sputter electrode and a second sputter electrode with a respective alternating current through a cable with a plurality of insulated cores surrounded by a common jacket.

[0078] A first subset of the plurality of insulated cores is electrically connected to the first sputter electrode and a second subset of the plurality of insulated cores is electrically connected to the second sputter electrode. The first subset may be supplied with a first alternating current that is out of phase with respect to a second alternating current that is supplied to the second subset. Accordingly, the first sputter electrode and the second sputter electrode can alternately act as anode and cathode, respectively.

[0079] The cable may include a shielding arrangement shielding the plurality of insulated cores and extending along the length of the cable. The shielding arrangement may be grounded, particularly via a grounding connection to a vacuum chamber at a grounding position. The grounding position may be positioned near the first sputter electrode and/or near the second sputter electrode.

[0080] In optional box 620, a plasma is ignited on one side of the powered sputter electrodes, and material is sputtered from sputter targets of the sputter electrodes toward a substrate for coating the substrate.

[0081] In some embodiments, the sputter deposition apparatus includes a vacuum chamber 101 sized to accommodate a large area substrate of generation GEN 2 or higher, such as GEN 5 or higher. The large area substrate may be rectangular. A substrate transport track may be provided, along which the substrate can be transported. The substrates may be carried by substrate carriers during the transport and/or during the processing.

[0082] During the sputter deposition on the substrate, the magnet assemblies (or “magnetrons”) which may be arranged inside the sputter electrodes may be moved in a wobbling manner or may be set to various sputtering positions. A magnet assembly that moves during the sputter deposition on the substrate may be beneficial to improve the layer uniformity, particularly for large area substrates, such as substrates for display manufacturing.

[0083] The term“substrate” as used herein embraces both inflexible substrates, e.g., a glass substrate, a wafer, slices of transparent crystal such as sapphire or the like, or a glass plate, and flexible substrates, such as a web or a foil. According to some implementations, embodiments described herein can be utilized for Display PVD, i.e. sputter deposition on large area substrates for the display market. The deposition apparatus may be configured for the deposition of layers on at least one of semiconductor, metal, and glass substrates. In particular, the deposition apparatus may be configured for the manufacture of at least one of semiconductor devices and display devices.

[0084] According to some embodiments, large area substrates or respective carriers, wherein the carriers may carry one substrate or a plurality of substrates, may have a size of at least 1 m². The size may be from about 0.67m² (0.73 m x 0.92 m - GEN 4.5) to about 8 m², more specifically from about 2 m² to about 9 m², or even up to 12 m². The substrates or carriers, for which the structures, apparatuses, such as cathode assemblies, and methods according to embodiments described herein are provided, can be large area substrates as described herein. For instance, a large area substrate or carrier can be GEN 4.5, which corresponds to about 0.67 m² substrates (0.73 m x 0.92 m), GEN 5, which corresponds to about 1.4 m² substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m² substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m² substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m² substrates (2.94 m x 3.37 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrates can similarly be implemented.

[0085] According to some embodiments of the present disclosure, a deposition system is provided. The deposition system includes a first sputter deposition apparatus according to embodiments described herein and at least one further sputter deposition apparatus according to embodiments described herein. The first sputter deposition apparatus may be configured to deposit a first material and the at least one further sputter deposition apparatus may be configured to deposit a second material different from the first material on a substrate. One or more sputter deposition apparatuses in a deposition system, particularly a vacuum deposition system, can be provided according to embodiments described herein.

[0086] While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A sputter deposition source (100), comprising: a first sputter electrode (110); and a power supply assembly (130) for supplying the first sputter electrode (110) with an electric current (I), the power supply assembly (130) comprising a cable (131) with a plurality of insulated cores (132) surrounded by a common jacket (133).

2. The sputter deposition source of claim 1, wherein the cable (131) comprises a shielding arrangement (140, 141) for shielding the plurality of insulated cores (133).

3. The sputter deposition source of claim 2, wherein the shielding arrangement (140, 141) comprises a common shield surrounding all insulated cores of the plurality of insulated cores (132), and/or wherein the shielding arrangement comprises a plurality of shields sheathing the insulated cores individually.

4. The sputter deposition source of claim 2 or 3, wherein the shielding arrangement (140) is grounded via a grounding connection (145) connected to a vacuum chamber (101) at a grounding position ( 146).

5. The sputter deposition source of claim 4, wherein a first distance (Dl) between the grounding position (146) and the first sputter electrode (110) is 30 cm or less, particularly 15 cm or less.

6. The sputter deposition source of any of claims 1 to 5, wherein the power supply assembly (130) further comprises a power source (150) for providing the electric current (I) and a power connector (151) for applying the electric current (I) to a movable portion of the first sputter electrode (110), wherein the cable (131) extends over 50% or more, particularly over 90% or more of a power connection path from the power source (150) to the power connector (151).

7. The sputter deposition source of any of claims 1 to 6, wherein a second distance (D2) between a distal end (134) of the jacket (133) and the first sputter electrode (110) is 30 cm or less, particularly, 15 cm or less.

8. The sputter deposition source of any of claims 1 to 7, wherein two, three or more insulated cores of the plurality of insulated cores (132) are electrically connected to the first sputter electrode (110), particularly via a power connector (151) comprising one or more brushes.

9. The sputter deposition source of any of claims 1 to 8, wherein the plurality of insulated cores (132) is stranded, particularly wherein the insulated cores have a helical progression around a center (C) of the cable (131).

10. The sputter deposition source of any of claims 1 to 9, further comprising at least one of: a first drive (161) for rotating the first sputter electrode (110) around a rotation axis (A), and a second drive (162) for moving a magnet assembly (165) inside the first sputter electrode (110).

11. The sputter deposition source of claim 10, wherein the second drive (162) comprises an electric motor (163), and a distance between the electric motor (163) and a distal end (134) of the jacket (133) is 20 cm or more, particularly 40 cm or more.

12. The sputter deposition source of any of claims 1 to 11, wherein the cable (131) is configured for supplying an alternating current to the first sputter electrode (110) and to a second sputter electrode (111) arranged adjacent to the first sputter electrode (110), wherein the first sputter electrode (110) and the second sputter electrode (111) are configured to alternately act as anode and cathode, particularly wherein the alternating current is an MF current or an RF current.

13. The sputter deposition source of any of claims 1 to 12, wherein a first subset (231) of the plurality of insulated cores (132) is electrically connected to the first sputter electrode (110), and a second subset (232) of the plurality of insulated cores (132) is electrically connected to a second sputter electrode (111).

14. The sputter deposition source of claim 13, wherein insulated cores of the first subset (231) and insulated cores of the second subset (232) are alternately arranged around a center (C) of the cable (131).

15. A sputter deposition apparatus (200), comprising: a vacuum chamber (101); an array of sputter electrodes arranged at least partially inside the vacuum chamber (101), the array comprising a first sputter electrode (110) and a second sputter electrode (111); and a power supply assembly (130) for supplying the first sputter electrode (110) and the second sputter electrode (111) with an alternating current, the power supply assembly (130) comprising a cable (131) with a plurality of insulated cores (132) surrounded by a common jacket (133), wherein a first subset (231) of the plurality of insulated cores (132) is electrically connected to the first sputter electrode (110) and a second subset (232) of the plurality of insulated cores (132) is electrically connected to the second sputter electrode (111).

16. A method of powering a sputter deposition source, comprising: supplying a first sputter electrode (110) with an electric current through a cable (131) with a plurality of insulated cores (132) surrounded by a common jacket (133).

17. A method of powering a sputter deposition source, comprising: supplying a first sputter electrode (110) and a second sputter electrode (111) with an alternating current through a cable (131) with a plurality of insulated cores (132) surrounded by a common jacket (133), a first subset (231) of the plurality of insulated cores (132) being electrically connected to the first sputter electrode (110) and a second subset (232) of the plurality of insulated cores (132) being electrically connected to the second sputter electrode (111).