KR20170134726A - Radio frequency (RF) -sputter deposition sources, deposition apparatus, and method of operation thereof - Google Patents

Radio frequency (RF) -sputter deposition sources, deposition apparatus, and method of operation thereof Download PDF

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KR20170134726A
KR20170134726A KR1020177032412A KR20177032412A KR20170134726A KR 20170134726 A KR20170134726 A KR 20170134726A KR 1020177032412 A KR1020177032412 A KR 1020177032412A KR 20177032412 A KR20177032412 A KR 20177032412A KR 20170134726 A KR20170134726 A KR 20170134726A
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power
electrical
power connector
electrical connection
deposition source
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KR1020177032412A
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Korean (ko)
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KR101956722B1 (en
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프랑크 슈나펜베르거
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Abstract

A deposition source 10 for sputter deposition is provided. The deposition source includes at least one rotatable cathode (30), an RF power arrangement (20), and a power transfer assembly (40) connecting the rotatable cathode and the RF power arrangement, the power transfer assembly comprising a rotatable cathode Includes a first power connector (42) and a second power connector (44) for simultaneously providing RF energy from the RF power arrangement at two spaced positions (32, 34).

Description

Radio frequency (RF) -sputter deposition sources, deposition apparatus, and method of operation thereof

[0001] Embodiments of the present invention are directed to a deposition source for sputter deposition, a sputtering apparatus, and methods of operation thereof. Embodiments include, in particular, a sputter deposition source for radio frequency (RF) sputtering, utilizing a rotatable cathode, an RF sputtering device for sputter deposition in a vacuum chamber, and RF power from the RF power device to the rotatable cathode .

[0002] PVD processes, and in particular sputtering processes, are getting more and more attention in some technical fields, e.g., display manufacturing. With a variety of sputtering techniques, a good deposition rate can be obtained with sufficient layer properties. Sputtering, particularly magnetron sputtering, is a technique for coating substrates, such as glass or plastic substrates, with metallic or non-metallic layers. Thus, a stream of coating material is produced by sputtering the target through the use of a plasma. As a result of collisions with the high-energy particles from the plasma, material is released from the target surface and plasma parameters such as pressure, power, gas, magnetic field, etc. are controlled. The material ejected from the target is moved from the target toward one or more substrates to be coated and attached to such substrates. A wide variety of materials, including metals, semiconductors, and dielectric materials, can be sputtered to desired specifications. Magnetron sputtering has been recognized in a variety of applications including semiconductor processing, optical coatings, food packaging, magnetic recording, and protective wear coatings.

[0003] Known sputtering devices include a power arrangement with a power supply for generating and supplying electrical energy, a power transfer assembly for depositing the energy to gas to ignite and sustain the plasma, And at least one cathode comprising a target for providing a coating material through sputtering by plasma. Sputtering is achieved by a wide variety of devices having different electrical, magnetic, and mechanical configurations. Known arrangements include power arrangements that provide direct current (DC) or alternating current (AC) to produce a plasma and AC electromagnetic fields applied regularly to the gas provide higher plasma rates than DC electromagnetic fields do. In a radio frequency (RF) sputtering apparatus, the plasma is striked and maintained by applying an RF electric field. Thus, non-conductive materials can also be sputtered. Comparing DC sputtering with intermediate frequency (MF) sputtering and DC sputtering, DC sputtering provides the highest deposition rate while RF sputtering provides the lowest deposition rate.

[0004] Sputtering devices having both static targets such as flat plate targets and rotary targets such as rotating cylindrical targets may be used. Often, sputtering devices with rotating targets are made to operate only with an alternating current of direct current or low-to medium frequency, but do not operate using RF emissions. As a result, such devices are only suitable for deposition of conductive layers. Recently, efforts have been made to combine the advantages of RF sputtering with rotatable targets.

[0005] In view of the above, in accordance with the independent claims, there is provided a deposition source for sputter deposition, a device for sputter deposition in a vacuum chamber, and a method of operating a deposition source. Further aspects, advantages, and features of the present invention are apparent from the dependent claims, the detailed description, and the accompanying drawings.

[0006] According to embodiments described herein, a sputter deposition source for sputter deposition is provided. The source includes: an RF power arrangement for supplying RF power; At least one rotatable cathode comprising a target for emitting a coating material during sputtering; And a power delivery assembly that couples the rotatable cathode to the RF power arrangement and thus feeds RF energy from the RF power arrangement to the rotatable cathode. The power delivery assembly includes a first power connector for providing RF energy from the RF power arrangement to the rotatable cathode and a second power connector for simultaneously providing RF energy from the RF power arrangement to the rotatable cathode, The first power connector is arranged spaced apart from the second power connector. As a result, RF energy can be applied to the rotatable cathode at the same time in at least one of the first position and the second position, particularly in both the first position and the second position.

[0007] According to embodiments, there is provided a sputter apparatus for sputter deposition in a vacuum chamber. The apparatus includes a sputter deposition source for sputter deposition in a vacuum chamber. The sputter deposition source comprises a rotatable cathode-cathode arranged within the vacuum chamber, the target providing a material to be deposited; An RF power arrangement for supplying RF power, arranged outside the vacuum chamber; And a first power connector and a second power connector for providing RF energy from the RF power arrangement to the rotatable cathode at two spaced positions, wherein at least one of the first power connector and the second power connector comprises a RF And a vacuum feed-through for transferring RF energy from the power arrangement into the vacuum chamber.

[0008] According to a further embodiment, a method of operating a deposition source for sputter deposition is provided. The method includes feeding RF energy to the rotatable cathode at a first position and at a second position spaced from the first position. The method may be performed by a sputtering apparatus according to the embodiments described herein, or by a deposition source for sputter deposition. In one embodiment, at least one electrical characteristic of the electrical connection supplying RF energy to at least one of the first position and the second position is adjusted during sputtering or prior to sputtering.

[0010] In order that the above-recited features of the present invention may be understood in detail, a more particular description of the invention as summarized above may be made by reference to the embodiments. The accompanying drawings relate to embodiments of the present invention and are described below:
[0011] Figure 1 shows a schematic view of a deposition source for sputter deposition according to embodiments described herein;
[0012] FIG. 2 shows a schematic view of a deposition source for sputter deposition according to embodiments described herein;
[0013] FIG. 3 illustrates a schematic side view of a deposition source for sputter deposition according to embodiments described herein;
[0014] FIG. 4 shows a schematic perspective view of the embodiment of FIG. 3;
[0015] FIG. 5 shows a schematic view of a deposition source for sputter deposition according to embodiments described herein;
[0016] FIG. 6 shows a schematic diagram of a sputtering apparatus according to embodiments described herein;
[0017] FIG. 7 illustrates a flow diagram of a method of operating a deposition source for sputter deposition in accordance with embodiments described herein;
[0018] FIG. 8 shows a flow diagram of a method of operating a deposition source for sputter deposition in accordance with embodiments described herein.

[0019] Reference will now be made in detail to the various embodiments of the invention, examples of which are illustrated in the drawings. In the following description of the drawings, like reference numerals refer to like components. In general, only differences for the individual embodiments are described. Each example is provided as an illustration of the invention and is not intended as a limitation of the invention. Further, the features illustrated or described as part of one embodiment may be used with other embodiments, or may be used for other embodiments, to create further embodiments. The detailed description is intended to cover such modifications and variations.

[0020] Fig. 1 is a cross-sectional view of a fuel cell including a rotatable cathode 30; An RF power arrangement (20); And a power delivery assembly 40. The deposition source 10 is shown in FIG. The power delivery assembly 40 connects the rotatable cathode 30 and the RF power arrangement 20 and allows the rotatable cathode 30 to receive RF energy from the RF power arrangement 20 at two spaced positions, A first power connector 42 and a second power connector 44 for simultaneous provision in a first position 32, a second position 34,

In embodiments described herein, the cathode includes a first axial end and a second axial end opposite the first axial end, the first power connector is mounted at the first axial end, and the second power connector Is installed at the second shaft end. In accordance with embodiments, one or more of the electrical characteristics of the electrical connection between at least one of the first and second power connectors and the match box may include a matchbox, while the RF power arrangement may include a matchbox, It can be made possible.

[0021] The RF power arrangement 20 is configured to provide alternating currents that oscillate at radio frequencies. Although the term "AC power" generally refers to alternating currents, the term "RF power" as used herein refers specifically to currents that oscillate at a vibration rate in the frequency range of 1 MHz to 300 GHz, 2 MHz to 1 GHz, 13.56 MHz, 27.12 MHz, or another multiple of 13.56 MHz. The term "MF" (intermediate frequency) may refer to AC power having a frequency in the range of 1 kHz to 1 MHz. MF sputtering devices routinely involve metal doping to deposit non-metallic materials, while RF sputtering devices can be used to deposit both metallic and non-metallic materials on a substrate. However, in the case of RF sputtering, it is more difficult to generate RF power and feed RF power to the rotating cathode during sputtering.

[0022] According to some embodiments, the RF power arrangement 20 may include an RF power generator for generating RF power. However, when RF power is used, it is desirable to maintain a constant and preferably optimal load on the power supply to operate efficiently. An impedance matching network, particularly a matchbox, can be used to ensure a consistent load on the power supply and to adapt the internal resistance of the power supply to the load impedance of the operating cathode. Thus, in the embodiments described herein, the RF power arrangement 20 may include an RF power generator coupled with a matchbox. A power generator may be coupled to the power delivery assembly through the matchbox to ensure impedance matching. In further embodiments, the RF power arrangement 20 is only adapted to receive RF power from an external RF power source (e.g., the external RF power source itself may not be part of the RF power arrangement 20) Box only. According to embodiments that may be combined with other embodiments described herein, a matchbox provides load matching when coupled to an external RF power source having given electrical characteristics. To provide optimal impedance matching, the matchbox may include adjustable capacitors for balancing purposes.

[0023] According to some embodiments, the sputter deposition source 10 includes a rotatable cathode 30 comprising a target of metallic and / or non-metallic material to be deposited on a substrate to be coated, which is released from the target by sputtering, . The rotatable cathode 30 may have a cylindrical shape and may be rotatable about a rotational axis 31. Compared to a stationary planar target, the rotatable target is used in such a way that the target material is reliably utilized over the entire circumference of the target during sputtering, and that the edge portions of the target, which may cause less sputtering on the target surface, It provides the advantage that it is not. Thus, by utilizing rotatable cathodes, the material costs can be reduced and the target can be used for a longer period of time before the target exchange is needed. The target utilization for planar RF cathodes is typically less than 30%; In the case of RF rotating cathodes, much better values can be achieved.

[0024] In some embodiments, the rotatable cathode 30 is connected to the cathode support by a rotary shaft, and the cathode support has a rotary drive for rotating the rotatable cathode 30 at a given rotational speed. In some embodiments, the rotatable cathode 30 may be configured to rotate at a speed in the range of 1 to 50 revolutions per minute, 5 to 30 revolutions per minute, or 15 to 25 revolutions per minute. Typically, the rotatable cathode 30 may be configured to rotate at a rate of about 20 revolutions per minute.

[0025] According to some embodiments, the sputter deposition source may also include a magnetron. The magnetron is a magnet assembly typically provided by permanent magnets to confine the plasma during sputter deposition. Typically, such magnets are arranged in a rotatable cathode.

[0026] In some embodiments, the target of the rotatable cathode 30 comprises at least one nonconductive material. For example, the target may be able to include at least one of SiO 2, Al 2 O 3, LiPO, SiC, LiCoO, ITO, IZO , or other target material or created thereby.

[0027] In some embodiments, which may be combined with other embodiments described herein, the target of the rotatable cathode 30 comprises at least one conductive or semi-conducting material. For example, the target may comprise or be made of ITO or LiCoO, while the layer properties of the deposited layer may be further improved by operating the cathode in RF / DC-mode. Specifically, in the RF / DC-mode, the rotatable cathode can be connected to the RF-power supply and the DC-power supply. Thus, by providing a deposition source in which RF energy and DC energy are provided, the sputter deposition rate of the deposition source can be increased. In particular, the layer properties obtainable by DC sputtering can be combined with the deposition rate obtainable by DC sputtering.

[0028] In some embodiments, the target, particularly the target tube, comprises or is made from at least one of Ag, Cu, titanium and Au. In particular, the rotatable cathode 30 is at least partially coated with at least one of the above-mentioned conductive materials. Good penetration at the surface can be achieved by the coating because the penetration depth of the RF currents in the conductors can be low (skin-effect) and thus the current flows along the surface of the conductor . For example, the rotatable cathode 30 may comprise a support made of stainless steel coated with Ag, Cu or Au. Thus, aspects such as costs and material strength can also be considered.

[0029] The RF power arrangement 20 is connected to the rotatable cathode 30 through a power delivery assembly 40 and the power delivery assembly 40 directs the rotatable cathode to two spaced positions, 32 and the second position 34 to RF power to the rotatable cathode 30 for energizing with the RF current. As a result, a suitable RF electric field can be applied to the gas locally positioned between the rotatable cathode 30 and the oppositely charged anode such that the gas is ionized between the rotatable cathode 30 and the anode and the plasma is maintained . The RF power assembly 40 has a first power connector 42 for feeding RF current to the rotatable cathode 30 at a first position 32 and the RF power assembly 40 includes a rotatable cathode 30 for feeding the RF current in the second position 34. The second power connector 44 has a second power connector 44,

[0030] Sputtering devices do not utilize the target material reliably and uniformly, even if the target is provided on the rotatable cathode, when RF energy is only fed to the rotatable cathode at only a single feeding position. This is because the RF electric field emanating from the cathode regions near the single feeding position can be stronger than the RF electric field that is emitted from the cathode regions far from the feeding position so that stronger sputtering can occur near the feeding position It is because. In particular, the rotatable cathodes, which are provided with electrical power through one cathode support arranged at the proximal end of the cathode, experience weaker sputtering in the target regions at the distal end of the cathode remote from the cathode support. This effect leads to asymmetrical target utilization in sputter deposition sources with a single power connector, a lack of layer uniformity, and a potential increase in material costs.

[0031] In contrast, according to embodiments disclosed herein, RF energy is applied to the rotatable cathode 30 in at least two spaced positions, e.g., first position 32 and second position 34, Whereby the RF electric field emanating from the rotatable cathode 30 takes a more uniform form along the extension of the rotatable cathode 30. Thus, the target material utilization can be maintained essentially constant between the first position 32 and the second position 34 without decreasing with distance from a single feeding position. In some embodiments, the deposition source may include more than two power connectors to simultaneously provide RF energy from the RF power arrangement to the rotatable cathode at more than two spaced apart positions. For example, in embodiments, RF energy is applied to the rotatable cathode at three or four spaced positions through three or four power connectors.

[0032] According to some embodiments that may be combined with other embodiments described herein, the first power connector 42 and the second power connector 44 may be configured such that RF energy is applied to the rotatable cathode 30 at a first position The distance between the first position 32 and the second position 34 is greater than 5 cm, greater than 50 cm, particularly greater than or equal to 1 m, .

[0033] In the case of embodiments in which the first power connector 42 and the second power connector 44 are arranged essentially symmetrically with respect to the cross sectional plane intersecting the center of the rotatable cathode 30, the good symmetrical feeding of the cathode This is possible. Such an embodiment is schematically illustrated in Fig. The rotatable cathode 30 has a cylindrical shape and the first power connector 42 is connected to the first position 32 of the upper half of the cylinder for RF power feeding. In addition, the rotatable cathode 30 may have a second power connector 44 connected to a second position 34 of the lower half of the cylinder for RF power feeding. According to embodiments that may be combined with other embodiments described herein, a first distance between the cross-sectional plane intersecting the center of the rotatable cathode 30 and the first power connector 42, The second distance between the second power connectors 44 may be essentially the same. The term "essentially" as used herein may mean that the first distance and the second distance are different by less than 20%, especially less than 5%. Such a symmetrical arrangement of the first power connector 42 and the second power connector 44 with respect to the rotatable cathode 30 results in a reasonably homogeneous and uniform utilization of the target material, Allow extension of cycle.

[0034] In some embodiments, the rotatable cathode has a cylindrical shape with a first axial end and a second axial end opposite the first axial end. Advantageously, RF energy can be fed to such cylindrical rotatable cathode 30 at or near the second axial end as well as at or near the first axial end. For example, the first distance between the first axial end of the rotatable cathode 30 and the first position 32 may be less than one tenth of the overall axial dimension of the rotatable cathode 30, The second distance between the second axial end of the cathode 30 and the second position 34 may also be less than a tenth of the total axial dimension of the rotatable cathode 30.

[0035] In some embodiments, at least one of the first power connector 42 and the second power connector 44 includes a couple (not shown) mechanically and electrically in contact with the conductive portion of the rotatable cathode 30 for RF power feeding Ring device. For example, at least one of the first power connector 42 and the second power connector 44 includes at least one brush for conducting RF current between the stationary power transfer assembly 40 and the rotatable cathode 30 And the brush is in sliding electrical contact with the conductive portion of the rotatable cathode 30. [

[0036] According to some embodiments, at least one of the first power connector and the second power connector provides RF energy transfer to the rotatable cathode by capacitive coupling or inductive coupling.

[0037] Figure 2 shows a schematic view of a deposition source 100 for sputter deposition according to other embodiments described herein.

[0038] 2, the RF power arrangement 20 includes an RF power generator 22 coupled with a match box 21, and the match box 21 is coupled to the match box 21 for optimal impedance matching . That is, the matchbox ensures that the output impedance of the RF power generator 22 is matched to the load impedance of the electrical arrangement connected to the output terminal 25 of the match box 21.

[0039] In some embodiments, the deposition source 100 shown in Fig. 2 is used as part of a sputtering apparatus, and the sputtering apparatus includes a vacuum chamber for performing sputtering in a vacuum chamber. The wall portion 151 of the vacuum chamber is shown in Fig. The RF power arrangement 20 can be arranged outside the vacuum chamber and the rotatable cathode 30 is arranged inside the vacuum chamber. A power transfer assembly 140 is provided for coupling the rotatable cathode 30 and the match box 21 and the power transfer assembly 140 is connected to the wall of the vacuum chamber 130 via a wall portion 151 of the vacuum chamber, And one vacuum feed-through 152.

[0040] Similar to the embodiment shown in FIG. 1, the rotatable cathode 30 shown in FIG. 2 has a cylindrical shape and is rotatable about a rotational axis 31. The rotatable cathode 30 has a first axial end 132 and a first power connector 142 is mounted at a first axial end 132 and the rotatable cathode 30 has a first axial end 132, A second axial end 134 opposite the second axial end 132 and a second power connector 144 at the second axial end 134. As a result, the rotatable cathode 30 simultaneously supplies RF energy from the first axial end 132 via the first power connector 142 and from the second axial end through the second power connector 144 Can receive. This arrangement also leads to a good and symmetrical utilization of the target material, also in the regions of the outer edges of the target.

[0041] In some embodiments, the rotatable cathode 30 is supported by the cathode support 136 on at least one of the first axial end 132 and the second axial end 134. Typically, at least one cathode support 136 may also include a device for rotating the rotatable cathode 30. For example, the device for rotating may comprise an actuator, a drive belt, a drivetrain, or a motor configured to rotate the rotatable cathode 30. In some embodiments, at least one of the first power connector 142 and the second power connector 144 is at least partially integrated into the cathode support 136.

[0042] The power delivery assembly 140 includes a first electrical connection 146 that electrically connects the match box 21 and the first power connector 142 and a second electrical connector 146 that electrically connects the match box 21 and the second power connector 142. In some embodiments, And a second electrical connection 148 for electrically connecting the first and second electrodes 144 to each other. In some embodiments, the first electrical connection 146 and the second electrical connection 148 are connected to a sheet-metal contact 149 (not shown) of the first power connector 142 and the second power connector 144, ) And an output terminal 25 of the match box 21. The match box 21 is provided with an electric contact portion, In some embodiments, at least one of the first electrical connection 146 and the second electrical connection 148 is provided as a cable, as a sheet metal conductor, and / or as a conductive rod. In the case of a good symmetrical feeding of the rotatable cathode 30 through the first power connector 142 and the second power connector 144 the first electrical characteristic of the first electrical connector 146 and the first electrical characteristic of the second electrical connector 148 ) Is less than 10%, in particular less than 2%. In particular, the first electrical characteristic of the first electrical connection 146 and the second electrical characteristic of the second electrical connection 148 are the same.

[0043] According to some embodiments that may be combined with other embodiments described herein, the first electrical characteristic and the second electrical characteristic may be determined by a first impedance of the first electrical connection 146 and a second electrical impedance of the second electrical connection < RTI ID = 0.0 > 148 < / RTI > According to some embodiments that may be combined with other embodiments described herein, the first electrical characteristic and the second electrical characteristic may be determined by a first electrical resistance of the first electrical connector 146 and a second electrical resistance of the second electrical connector 146, respectively, Lt; RTI ID = 0.0 > 148 < / RTI > According to some embodiments, the first electrical connection 146 and the second electrical connection 148 are made of the same material and have the same length, cross-section, and overall shape, whereby both electrical characteristics are essentially the same Do. The term "essentially the same" as used herein means that the electrical characteristics of each of the first electrical connection and the second electrical connection are different by less than 2%. According to embodiments, the arrangement formed by the first electrical connector 146 and the first electrical connector 142 connected to the first electrical connector 146 is essentially identical to the second electrical connector 148 with the same electrical characteristics, And a second power connector 144 connected to the second electrical connection 148. The second electrical connector 144 is a mirror image of the arrangement formed by the first electrical connector 148 and the second electrical connector 144,

[0044] The corresponding electrical properties of the first electrical connection 146 and the second electrical connection 148 are such that during sputtering the distance from the first axial end 132 of the rotatable cathode 30 to the second axial end 134 Resulting in a more uniform and uniform removal of the target material. Thus, in at least some embodiments, the matchbox 21 is essentially located midway between the first power connector 142 and the second power connector 144, and the space length of the first electrical connector 146 And the second electrical connection portion 148 are the same.

[0045] Figure 3 shows a schematic side view of a deposition source 200 for sputter deposition according to another embodiment described herein; And Figure 4 shows a schematic perspective view of this embodiment. This embodiment is similar to the embodiment described above with respect to Fig. Thus, the above given description also applies to the embodiment of Figs. 3 and 4.

[0046] 3 and 4, the deposition source 200 includes a first power connector 142 that couples the output terminal 25 of the match box 21 to the first power connector 142. In some embodiments, And an adjustment device 226 for adjusting the first electrical characteristic of the electrical connection 246. The adjustment device 226 may also be configured to adjust the second electrical characteristic of the second electrical connection 248 connecting the output terminal 25 and the second power connector 144. In some embodiments, the first electrical characteristic refers to the first impedance of the first electrical connection 246 and the second electrical characteristic refers to the second impedance of the second electrical connection 248. [

[0047] In some embodiments, the first electrical characteristic refers to the first electrical resistance of the first electrical connection 246 and the second electrical characteristic refers to the second electrical resistance of the second electrical connection 248. [ The adjustment of the electrical resistance is periodically carried out with the adjustment of the impedance, and vice versa.

[0048] According to embodiments, the adjustment device may be configured to set the first impedance to be equal to the second impedance before initiating the sputtering operation, in order to pre-set the same utilization of the target at both axial ends of the rotatable cathode 30 Can be used to make. In some embodiments, such equalization of the first impedance and the second impedance may be achieved by varying the spatial length of the first electrical connection 246 to be equal to the spatial length of the second electrical connection 248, or Can be prepared by changing the space length of the second electrical connection portion 248 to be equal to the space length of the first electrical connection portion 246. This is because the impedance and electrical resistance of the elongated conductor between both ends of the conductor increase with the space length thereof.

[0049] According to embodiments that may be combined with other embodiments disclosed herein, the adjustment device 226 may be used to adjust the first impedance or adjust the second impedance in the case of asymmetrical target utilization have. For example, in some instances, the electrical characteristics of the first electrical connector 142 and the electrical characteristics of the first electrical connector 146 may be slightly different, which may cause the first electrical connector 246 and the second electrical connector 146, May result in asymmetric target utilization after the first sputtering period, despite the corresponding electrical characteristics of the second sputtering target 248. [ Thereafter, the first impedance or the second impedance may be adjusted by using the tuning device in such a way that the asymmetric target utilization or layer uniformity is compensated or overcompensated by continuing the sputtering operation with the target Lt; / RTI >

[0050] 3 and 4, the adjustment device 226 is provided by the output terminal 25 of the match box 21 being movably mounted along the conductive rod 249, 249 electrically connect the first electrical connector 142 and the first electrical connector 146 to each other. In other words, the first electrical connection 246 and the second electrical connection 248 are provided by a conductive rod 249 while the output terminal 25 of the match box 21 is connected to the conductive rod 249). Thus, the increase in the length of the first electrical connection 246 is accompanied by a decrease in the length of the second electrical connection 248, and vice versa. The entire matchbox 21 is mounted for sliding movement along the conductive rod 249 while the output terminal 25 is connected to the match box 21 at a desired position along the length of the conductive rod 249. In some embodiments, A fixing device such as a clamp is provided in the match box 21. [

[0051] 4, in accordance with some embodiments that may be combined with other embodiments described herein, in order to hold and support the rotatable cathode 30 at both axial ends, The power connector 142 and the second power connector 144 are at least partially integrated into the cathode supports 136 and 236, respectively. A cathode yoke 236 that can be arranged at least partially against the rotatable cathode, from an operating position for the sputtering operation, for decomposition of the rotatable cathode, and / or inside the rotatable cathode 30, a positioning device 250 is provided on at least one of the cathode supports 136, 236 (in particular, the upper cathode support 236 is in a vertical direction) for moving the magnet yoke to an installed position for disassembly. In some embodiments, the cathode support 236 at least partially covers the upper axial end of the rotatable cathode 30 while the portion of the first power connector 142 and / The portion of the drive is axially engaged with the rotatable cathode 30, which is formed into a cylinder, at the operating position. After moving the cathode support 236 axially away from the rotatable cathode 30 the cathode support 236 is no longer axially engaged with the rotatable cathode 30 so that the rotatable cathode 30, May be removed for maintenance or replacement. In some embodiments, the movable cathode support is provided by a movable seal that seals at least one of the power connectors, e.g., the first power connector 142 and the second power connector 144.

[0052] Figure 5 shows a schematic view of a deposition source 300 for sputter deposition according to other embodiments described herein. This embodiment is similar to the embodiment described above with reference to Figs. Therefore, the above given description also applies to the embodiment of FIG.

[0053] 5, a first power connector 342 is coupled to the rotatable cathode 30 in a first axis direction (e.g., a first direction) to provide RF energy transfer to the rotatable cathode by capacitive coupling in a first position, And a second power connector 344 is provided at the end 332 of the rotatable cathode 30 to provide RF energy transfer to the rotatable cathode by capacitive coupling at the second position, And the second axial end portion 334 is opposite the first axial end portion 332. The second axial end portion 334,

[0054] In the following description, only the first power connector 342 and the first axial end 332 of the rotatable cathode 30 will be described in detail; However, in some embodiments, the second power connector 344 and the second axial end 334 of the rotatable cathode may have a corresponding layout.

[0055] According to some implementations, the first power connector 342 includes a first coupling element 382 and a first axial end 332 of the rotatable cathode 30 is coupled to a first Lt; RTI ID = 0.0 > 382 < / RTI > According to some embodiments, the capacitance is in the range of 1 to 5000 pF, in the range of 10 to 2000 pF, in the range of 100 to 1000 pF, in the range of 400 to 600 pF, or especially about 500 pF. Thus, the first power connector 342 allows the transfer of RF power to the rotatable cathode 30 by capacitive coupling.

[0056] The first coupling element 382 and the second coupling element 384 are configured such that when rotating the second coupling element 384 about the rotational axis 31 relative to the first coupling element 382, And the capacitances remain essentially the same. By way of example, the first coupling element 382 and the second coupling element 384 may be rotationally symmetric with respect to the axis of rotation 31, and they may be particularly symmetrical about a cylindrical element and / Elements. In some embodiments, the first coupling element 382 is a first hollow cylindrical element, the second coupling element 384 is a second hollow cylindrical element, and one of the hollow cylindrical elements is a hollow cylindrical element Has a smaller diameter and is coaxially engaged with the other hollow cylindrical element.

[0057] The distance between the first coupling element 382 and the second coupling element 384 is filled with a dielectric, such as gas or air, or vacuum.

[0058] In embodiments, at least one of the first power connector and the second power connector is made for RF energy transfer to the rotatable cathode by capacitive coupling or through a contact device such as a brush.

[0059] FIG. 6 shows a schematic view of a sputtering apparatus 400 according to embodiments described herein. The sputtering apparatus 400 includes a vacuum chamber 410 and a deposition source 420, according to any of the embodiments described herein. In the illustrated embodiment, the deposition source 420 includes four rotatable cathodes 30 and four corresponding anodes 430 facing the cathodes, and the rotatable cathodes 30 And the anodes 430 are arranged inside the vacuum chamber 410. More than four rotatable cathodes may be provided.

[0061] An RF power arrangement 20 for supplying RF power is arranged outside the vacuum chamber 410 and electrically connected to the rotatable cathodes 30 and the anodes 430 via electrical connections and power connectors, Lt; / RTI > According to embodiments of the sputtering apparatus, which may be combined with other embodiments described herein, the housing of the vacuum chamber may be electrically connected to the RF power arrangement 20. Thus, the housing of the vacuum chamber can be used as the corresponding anode for the rotatable cathodes. 6, each of the rotatable cathodes 30 is configured to provide RF energy from the RF power arrangement 20 to each rotatable cathode 30 at two spaced positions, The power connector 442 and the second power connector 444. As shown in FIG. 6, each of the rotatable cathodes 30 may be connected to a DC power supply 125 for providing DC energy to the rotatable cathode. Further, with exemplary reference to FIG. 6, in accordance with embodiments of the sputtering apparatus that can be combined with other embodiments described herein, each of the RF power supplies to each rotatable cathode 30 The power arrangement 20 may be connected to an arc-synchronization device 170 for synchronizing the RF power supplied to each of the cathodes.

[0062] As shown in FIG. 6, additional chambers 411 may be provided adjacent to the vacuum chamber 410. The vacuum chamber 410 may be separated from adjacent chambers by valves having a valve housing 404 and a valve unit 405, respectively. Thus, after the carrier 406 with the substrate 407 to be coated is inserted into the vacuum chamber 410 as indicated by the arrow 401, the valve units 405 can be closed. Thus, the atmosphere in the vacuum chambers 410 can be controlled, for example, by creating a technical vacuum using vacuum pumps connected to the vacuum chamber 410, and / By inserting it into the housing.

[0063] According to typical embodiments, the process gases may include inert gases such as argon, and / or reactive gases such as oxygen, nitrogen, hydrogen and ammonia, ozone, activated gases, and the like.

[0064] In the vacuum chamber 410, rollers 408 are provided to transport the carrier 406 with the substrate 407 into and out of the vacuum chamber 410. The term "substrate " as used herein refers to a substrate (e.g., a substrate, a substrate, a substrate, a substrate, a substrate, or the like) that is immersed in an inflexible substrate (e.g., slices of a transparent crystal such as a glass substrate, wafer, or sapphire) web) or foil).

[0065] Figure 6 shows a rotatable cathode 30 having magnet assemblies or magnetrons 431 provided in rotatable cathodes 30 and magnetrons 431 are each positioned on the outer surface of the target material (Backing tubes). ≪ / RTI >

[0066] The details of the first power connector 442 and / or the second power connector 444, associated with each rotatable cathode 30, may be obtained from one of the embodiments described above, May be taken by combining any of the embodiments, and such details are not repeated here.

[0067] Figure 7 shows a flow diagram of a method of operating a deposition source for sputter deposition in accordance with embodiments described herein. Any of the embodiments described above may be taken as the deposition source to be operated in accordance with the operating method described herein.

[0068] 7, the method includes simultaneously applying RF energy to the rotatable cathode at a first position and at a second position spaced from the first position, as exemplified by the first block 702 . According to embodiments, the RF energy may be taken from the RF power arrangement and supplied to the rotatable target through a power delivery assembly comprising two spaced apart power connectors. Thus, in order to sputter the target area of the rotary cathode, the plasma may be ignited. As a result, the target material can be released from the target area and deposited on the substrate to be coated.

[0069] Figure 8 shows a flow diagram of a method of operating a deposition source for sputter deposition according to another embodiment described herein.

[0070] As shown in Figure 8, the method adjusts the first electrical characteristic of the first electrical connection to supply RF energy from the third position to the first position, as exemplified by the second block 802 And / or adjusting a second electrical characteristic of the second electrical connection to supply RF energy to the second position from the third position. According to embodiments described herein, the first electrical connection connects a first power connector for feeding RF energy to the rotatable cathode in a first position and an output terminal of a matchbox arranged in a third position. Similarly, the second electrical connection connects the output terminal of the match box with a second power connector that feeds RF energy to the rotatable cathode at a second position. In some embodiments, the first electrical characteristic is a first impedance and / or a first electrical resistance of the first electrical connection, and the second electrical characteristic is a second impedance and / or a second electrical resistance of the second electrical connection.

[0071] According to some embodiments, the first electrical characteristic and / or the second electrical characteristic is adjusted by varying the spatial length of the first electrical connection and / or the second electrical connection. In particular, the ratio of the length of the first electrical connection to the length of the second electrical connection may be varied. In some embodiments, the ratio may be adjusted to be essentially or exactly one. As used herein, "essentially" includes ratio values of 0.98 to 1.02. 1 results in a symmetrical feeding of the rotary cathode in a balanced manner, thus leading to a uniform target utilization. In other embodiments, to compensate for the asymmetrical use of a previously used target, and / or to compensate for unequal electrical characteristics of the first power connector and / or the second power connector, ≪ / RTI >

[0072] 8, the RF energy is applied to the rotatable cathode, as exemplified by the third block 804 in FIG. 8, after the adjustment as illustrated by way of example by the second block 802, Through the connection and the second electrical connection, at two spaced positions for sputter operation.

[0073] While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (15)

A deposition source (10, 100, 200, 300, 420) for sputter deposition,
At least one rotatable cathode (30);
An RF power arrangement (20); And
And a power delivery assembly (40, 140) connecting the rotatable cathode and the RF power arrangement,
The power transfer assembly includes a first power connector (42, 142, 342, 442) for simultaneously providing RF energy from the RF power arrangement to the rotatable cathode at two spaced positions (32, 34) And a second power connector (44, 144, 344, 444).
Deposition source for sputter deposition. The method according to claim 1,
Wherein the first power connector (42, 142, 342) and the second power connector (44, 144, 344) are arranged essentially symmetrically with respect to a cross-sectional plane intersecting the center of the rotatable cathode (30)
Deposition source for sputter deposition. 3. The method according to claim 1 or 2,
The rotatable cathode (30) has a cylindrical shape with a first axial end (132, 332) and a second axial end opposite the first axial end (134, 334) (142, 342) is installed at the first axial end and the second power connector (144, 344) is installed at the second axial end,
Deposition source for sputter deposition. 4. The method according to any one of claims 1 to 3,
Wherein at least one of the first power connector (342) and the second power connector (344) provides RF energy transfer to the rotatable cathode (30) by capacitive coupling or inductive coupling,
Deposition source for sputter deposition. 5. The method according to any one of claims 1 to 4,
The RF power arrangement includes a match box 21,
The power delivery assembly includes:
First electrical connections (146, 246) connecting the match box and the first power connector;
And a second electrical connection (148, 248) connecting the match box and the second power connector.
Deposition source for sputter deposition. 6. The method of claim 5,
Wherein the first impedance of the first electrical connection and the second impedance of the second electrical connection are different by less than 10% and in particular the first impedance and the second impedance are essentially the same and / The first electrical resistance of the first electrical connection and the second electrical resistance of the second electrical connection are different by less than 10%, and in particular, the first electrical resistance and the second electrical resistance are essentially the same,
Deposition source for sputter deposition. The method according to claim 5 or 6,
In particular, by adjusting the length of the first electrical connection and / or the second electrical connection to adjust the first electrical characteristic of the first electrical connection and / or the second electrical characteristic of the second electrical connection, Device 226,
Deposition source for sputter deposition. 8. The method according to any one of claims 5 to 7,
The match box (21) includes an output terminal (25) provided movably along at least one of the first electrical connection (246) and the second electrical connection (248)
Deposition source for sputter deposition. 9. The method according to any one of claims 5 to 8,
Wherein the first electrical connector and the second electrical connector are provided by a conductive rod 249 connected between the first power connector 142 and the second power connector 144, ≪ RTI ID = 0.0 > a < / RTI > conductive rod,
Deposition source for sputter deposition. 10. The method according to any one of claims 1 to 9,
Wherein at least one of the first power connector and the second power connector has a cathode support portion movable with respect to the rotatable cathode (30) from an operating position for sputtering operation to an installation position for disassembly of the rotatable cathode 236)
Deposition source for sputter deposition. 11. The method of claim 10,
The cathode support 236 is axially movable away from the rotatable cathode 30,
Deposition source for sputter deposition. As the sputtering apparatus 400,
A vacuum chamber 410; And
A deposition source (420) according to any one of the preceding claims,
The rotatable cathode 30 is positioned inside the vacuum chamber 410,
Wherein at least one of the first power connector and the second power connector comprises a feed-through (152), particularly a vacuum rotary feed-through, for delivering RF energy from the RF power arrangement into the vacuum chamber.
Sputtering device. 13. A method of operating a deposition source for sputter deposition, in particular, according to any one of claims 1 to 11,
The method includes concurrently feeding RF energy to the rotatable cathode (30) at a first position (32) and a second position (34) spaced from the first position.
A method of operating a deposition source for sputter deposition. 14. The method of claim 13,
A second electric power supply for supplying RF energy to the second position from the third position and / or for adjusting a first electrical characteristic of the first electrical connection 246 that supplies RF energy from the third position to the first position, And adjusting a second electrical characteristic of the connection portion (248).
A method of operating a deposition source for sputter deposition. 15. The method of claim 14,
Wherein the first electrical characteristic and the second electrical characteristic are adjusted by varying a ratio between a length of the first electrical connection portion and a length of the second electrical connection portion,
A method of operating a deposition source for sputter deposition.
KR1020177032412A 2015-05-08 2015-05-08 Radio frequency (RF) -sputter deposition sources, deposition apparatus, and method of operation thereof KR101956722B1 (en)

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KR20200011295A (en) 2018-07-24 2020-02-03 주식회사 선익시스템 Deposition Equipment Including Means of Restraining Arc
KR20200018081A (en) 2018-08-10 2020-02-19 주식회사 선익시스템 Deposition Equipment Including Means Having Covering Formation for Restraining Arc

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KR102067820B1 (en) 2018-07-24 2020-01-17 (주)선익시스템 Deposition Equipment Including Means Having Variable Formation for Restraining Arc
KR20200011295A (en) 2018-07-24 2020-02-03 주식회사 선익시스템 Deposition Equipment Including Means of Restraining Arc
KR20200018081A (en) 2018-08-10 2020-02-19 주식회사 선익시스템 Deposition Equipment Including Means Having Covering Formation for Restraining Arc

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