JP7017832B1

JP7017832B1 - Bias application device

Info

Publication number: JP7017832B1
Application number: JP2021576335A
Authority: JP
Inventors: 亦周長江; 貴昭青山; 将崇石田; 嘉規大胡
Original assignee: Shincron Co Ltd
Current assignee: Shincron Co Ltd
Priority date: 2021-06-08
Filing date: 2021-06-08
Publication date: 2022-02-09
Anticipated expiration: 2041-06-08
Also published as: JPWO2022259368A1; WO2022259368A1

Abstract

成膜チャンバ（１１）において、基板（Ｓ）が、少なくとも所定の処理を施す第１領域（ＦＲ）と当該第１領域以外の第２領域（ＳＲ）とに移動するスパッタ装置（１）に用いられ、電源（３）からのバイアスを前記基板に印加するバイアス印加装置（２）であって、前記電源（３）に接続され、前記第１領域（ＦＲ）に固定された第１電極（２１）を有する。Used for the sputtering apparatus (1) in which the substrate (S) moves to a first region (FR) to be subjected to at least a predetermined treatment and a second region (SR) other than the first region in the film forming chamber (11). A bias application device (2) that applies a bias from the power supply (3) to the substrate, and is a first electrode (21) connected to the power supply (3) and fixed to the first region (FR). ).

Description

本発明は、バイアス印加装置に関するものである。 The present invention relates to a bias applying device.

プラズマ反応を利用したスパッタ成膜法の一つとして、ターゲットが装着されたカソード電極の他に、被成膜基板が装着された基板ホルダにも電位を与え、被成膜基板にバイアス電圧を印加しながら薄膜を形成する、いわゆるバイアススパッタ法が知られている（特許文献１）。このバイアススパッタ法では、被成膜基板の表面にターゲット物質からなる薄膜をスパッタリングする際に、被成膜基板が装着される基板ホルダに電力を供給し、基板ホルダにプラズマに対するバイアス電位を与える。 As one of the sputtering film formation methods using the plasma reaction, a potential is applied to the substrate holder on which the film-deposited substrate is mounted in addition to the cathode electrode on which the target is mounted, and a bias voltage is applied to the film-deposited substrate. The so-called bias sputtering method, which forms a thin film while forming a thin film, is known (Patent Document 1). In this bias sputtering method, when a thin film made of a target substance is sputtered on the surface of a film-deposited substrate, electric power is supplied to a substrate holder on which the film-deposited substrate is mounted, and a bias potential for plasma is given to the substrate holder.

上記プラズマ処理により薄膜に付与される機能として、膜質が緻密化して硬さが向上すること（特許文献１）や、ステップカバレッジ（微細段差部の被覆）が改善する、すなわちプリント基板のコンタクトホールにおいて側面も底部も略均一な膜厚で形成できたりすること（特許文献２）が挙げられる。前者はプラズマ中のイオンによる成膜アシストによるもの、後者は同イオンによるスパッタ膜のエッチング効果によるものとされている。 As the functions imparted to the thin film by the plasma treatment, the film quality is densified and the hardness is improved (Patent Document 1), and the step coverage (covering of the fine step portion) is improved, that is, in the contact hole of the printed circuit board. It can be mentioned that both the side surface and the bottom portion can be formed with a substantially uniform film thickness (Patent Document 2). The former is due to the film formation assist by the ions in the plasma, and the latter is due to the etching effect of the sputtered film by the ions.

被成膜基板にバイアスを印加する装置形態としては、１個の被成膜基板に対し、１系統のバイアス電力を供給する枚葉式の成膜装置がある。この他、平板トレイ、カルーセルドラム、自転と公転を同時に行う遊星回転スピンドルといった基板ホルダに、複数枚の被成膜基板を搭載し、１バッチ中に複数枚の被成膜基板をバイアス処理する形態もある。 As a device form for applying a bias to the film-deposited substrate, there is a single-wafer film-forming device that supplies one system of bias power to one film-deposited substrate. In addition, a plurality of substrates to be deposited are mounted on a substrate holder such as a flat plate tray, a carousel drum, and a planetary rotation spindle that rotates and revolves at the same time, and a plurality of substrates to be deposited are biased in one batch. There is also.

特開２００２－２５６４１５号公報Japanese Patent Application Laid-Open No. 2002-256415 特表平１１－５０９０４９号公報Special Table No. 11-5009049

上記従来技術のうち、基板ホルダに複数枚の被成膜基板を搭載してバイアス処理する装置形態において、被成膜基板にバイアス電圧を印加する場合には、基板ホルダに装着された全ての被成膜基板に対して電圧を印加することになる。そのため、基板ホルダに搭載された各被成膜基板に印加される電力密度（被成膜基板の単位面積当たりの供給電力）が小さくなり、給電効率が低くなる。その結果、プラズマ処理の効果が弱まるという問題がある。尤も、電力密度を大きくするために印加するバイアス電力量を増加させることも考えられるが、ある一定量以上の電力量を印加すると、給電を行っている接続機器において、バイアス電力の漏洩に伴う異常放電が生じるおそれがある。そのため、従来技術では、弱いプラズマ処理しか行えないという問題があった。 Among the above-mentioned prior arts, in the apparatus form in which a plurality of sheets to be film-formed are mounted on the substrate holder and bias processing is performed, when a bias voltage is applied to the substrate to be film-formed, all the substrates mounted on the substrate holder are covered. A voltage will be applied to the film-forming substrate. Therefore, the power density (power supply per unit area of the film-formed substrate) applied to each film-formed substrate mounted on the substrate holder becomes small, and the power feeding efficiency becomes low. As a result, there is a problem that the effect of plasma processing is weakened. However, it is conceivable to increase the amount of bias power applied in order to increase the power density, but if a certain amount of power or more is applied, an abnormality due to leakage of bias power will occur in the connected equipment that is supplying power. Discharge may occur. Therefore, the conventional technique has a problem that only weak plasma processing can be performed.

本発明が解決しようとする課題は、給電効率が高いバイアス印加装置を提供することである。 An object to be solved by the present invention is to provide a bias applying device having high feeding efficiency.

本発明は、以下のいずれかのバイアス印加装置により上記課題を解決する。
（１）基板に所定の処理を施す処理装置に用いられ、
処理室内において移動する基板が、
電源に接続されるとともに前記処理室内に固定された第１電極を通過するときに、前記基板にバイアスを印加するバイアス印加装置において、
前記第１電極を含む雰囲気を、プラズマ放電圧力以下に局所排気する排気機構を備えるバイアス印加装置。
（２）基板に所定の処理を施す処理装置に用いられ、
処理室内に配置される複数の基板に対し、前記基板の面積の総和以下の電極面積を有する第１電極を前記処理室内に備え、
前記第１電極を介して電源からのバイアスを前記基板に印加するバイアス印加装置において、
前記第１電極を含む雰囲気を、プラズマ放電圧力以下に局所排気する排気機構を備えるバイアス印加装置。
（３）基板に所定の処理を施す処理装置に用いられ、
処理室内のプラズマ処理空間又はその近傍に、電源に接続された第１電極が固定され、
前記第１電極を介して電源からのバイアスを前記基板に印加するバイアス印加装置において、
前記第１電極を含む雰囲気を、プラズマ放電圧力以下に局所排気する排気機構を備えるバイアス印加装置。 The present invention solves the above problem by any of the following bias application devices.
(1 ) Used in processing equipment that performs predetermined processing on a substrate,
The substrate that moves in the processing room
In a bias applying device that applies a bias to the substrate when it is connected to a power source and passes through a first electrode fixed in the processing chamber.
A bias applying device including an exhaust mechanism for locally exhausting an atmosphere including the first electrode below the plasma discharge pressure .
(2) Used in processing equipment that performs predetermined processing on the substrate,
A first electrode having an electrode area equal to or less than the total area of the substrates is provided in the processing chamber for a plurality of substrates arranged in the processing chamber.
In a bias applying device that applies a bias from a power source to the substrate via the first electrode.
A bias applying device including an exhaust mechanism for locally exhausting an atmosphere including the first electrode below the plasma discharge pressure .
( 3 ) Used in processing equipment that applies predetermined processing to the substrate,
The first electrode connected to the power supply is fixed in or near the plasma processing space in the processing chamber.
In a bias applying device that applies a bias from a power source to the substrate via the first electrode.
A bias applying device including an exhaust mechanism for locally exhausting an atmosphere including the first electrode below the plasma discharge pressure .

本発明によれば、選択的にバイアス印加ができるので、電力密度が高く給電効率の良いバイアス印加装置を提供することができる。 According to the present invention, since bias can be selectively applied, it is possible to provide a bias applying device having high power density and good feeding efficiency.

本発明に係るバイアス印加装置を用いた成膜装置の一実施の形態（スパッタ装置）を示す断面図である。It is sectional drawing which shows one Embodiment (sputtering apparatus) of the film forming apparatus using the bias application apparatus which concerns on this invention. 図１Ａの成膜装置（スパッタ装置）の一実施の形態を示す平面図である。FIG. 3 is a plan view showing an embodiment of the film forming apparatus (sputtering apparatus) of FIG. 1A. 本発明に係るバイアス印加装置を用いた成膜装置の他の実施の形態（スパッタ装置）を示す断面図である。It is sectional drawing which shows the other embodiment (sputtering apparatus) of the film forming apparatus using the bias application apparatus which concerns on this invention. 図２Ａの成膜装置（スパッタ装置）の一実施の形態を示す平面図である。FIG. 2 is a plan view showing an embodiment of the film forming apparatus (sputtering apparatus) of FIG. 2A. 図１Ａの基板ホルダの一つの基板保持部に設けられる第２電極を示す分解斜視図である。It is an exploded perspective view which shows the 2nd electrode provided in one substrate holding part of the substrate holder of FIG. 1A. 図１Ａに示す成膜装置（スパッタ装置）において、プラズマ処理領域に設けられた第１電極とプラズマ処理領域を通過する第２電極とを示す平面図である。FIG. 3 is a plan view showing a first electrode provided in the plasma processing region and a second electrode passing through the plasma processing region in the film forming apparatus (sputtering apparatus) shown in FIG. 1A. 本発明に係るバイアス印加装置を用いた成膜装置の他の実施の形態（スパッタ装置）を示す断面図である。It is sectional drawing which shows the other embodiment (sputtering apparatus) of the film forming apparatus using the bias application apparatus which concerns on this invention. 本発明に係るバイアス印加装置を用いた成膜装置のさらに他の実施の形態（スパッタ装置）を示す断面図である。It is sectional drawing which shows the other embodiment (sputtering apparatus) of the film forming apparatus using the bias application apparatus which concerns on this invention. 本発明に係るバイアス印加装置を用いた成膜装置のさらに他の実施の形態（スパッタ装置）を示す断面図である。It is sectional drawing which shows the other embodiment (sputtering apparatus) of the film forming apparatus using the bias application apparatus which concerns on this invention. 本発明に係るバイアス印加装置を用いた成膜装置のさらに他の実施の形態（スパッタ装置）を示す断面図である。It is sectional drawing which shows the other embodiment (sputtering apparatus) of the film forming apparatus using the bias application apparatus which concerns on this invention. 本発明に係るバイアス印加装置を用いた成膜装置のさらに他の実施の形態（スパッタ装置）を示す断面図である。It is sectional drawing which shows the other embodiment (sputtering apparatus) of the film forming apparatus using the bias application apparatus which concerns on this invention. 本発明に係るバイアス印加装置を用いた成膜装置のさらに他の実施の形態（スパッタ装置）を示す部分拡大断面図である。It is a partially enlarged sectional view which shows the still other embodiment (sputtering apparatus) of the film forming apparatus using the bias application apparatus which concerns on this invention. 本発明に係るバイアス印加装置を用いた成膜装置のさらに他の実施の形態（スパッタ装置）を示す部分拡大断面図である。It is a partially enlarged sectional view which shows the still other embodiment (sputtering apparatus) of the film forming apparatus using the bias application apparatus which concerns on this invention. 本発明に係るバイアス印加装置を用いた成膜装置のさらに他の実施の形態（スパッタ装置）を示す部分拡大断面図である。It is a partially enlarged sectional view which shows the still other embodiment (sputtering apparatus) of the film forming apparatus using the bias application apparatus which concerns on this invention. 本発明に係るバイアス印加装置を用いた成膜装置の他の実施の形態（スパッタ装置）を示す平面図である。It is a top view which shows the other embodiment (sputtering apparatus) of the film forming apparatus using the bias application apparatus which concerns on this invention. 本発明に係るバイアス印加装置を用いた成膜装置の他の実施の形態（スパッタ装置）を示す断面図である。It is sectional drawing which shows the other embodiment (sputtering apparatus) of the film forming apparatus using the bias application apparatus which concerns on this invention. 本発明に係るバイアス印加装置を用いた成膜装置の他の実施の形態（蒸着装置）を示す断面図である。It is sectional drawing which shows the other embodiment (deposited film apparatus) of the film forming apparatus using the bias application apparatus which concerns on this invention.

以下、本発明の実施形態を図面に基づいて説明する。図１Ａは、本発明に係るバイアス印加装置を用いた成膜装置（スパッタ装置）１の一実施の形態を示す断面図、図１Ｂは同じく平面図である。本実施形態の成膜装置（スパッタ装置）１は、図１Ａ及び図１Ｂに示すように、基板Ｓに膜を形成する成膜チャンバ１１と、成膜チャンバ１１の内部空間を必要に応じて減圧雰囲気にする減圧装置１５と、成膜チャンバ１１の内部空間において回転可能に設けられ、一方の主面に基板Ｓを保持する基板保持部１４を有する平板形状の基板ホルダ１２と、基板ホルダ１２を回転させる駆動装置１３と、成膜チャンバ１１の内部空間に設けられたスパッタ電極１６と、同じく成膜チャンバ１１の内部空間に設けられたプラズマ発生装置１７と、成膜チャンバ１１の内部空間に放電ガス及び必要に応じて反応ガスを導入するガス導入装置１８と、を備える。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1A is a cross-sectional view showing an embodiment of a film forming apparatus (sputtering apparatus) 1 using the bias applying apparatus according to the present invention, and FIG. 1B is also a plan view. As shown in FIGS. 1A and 1B, the film forming apparatus (spattering apparatus) 1 of the present embodiment reduces the pressure of the film forming chamber 11 forming a film on the substrate S and the internal space of the film forming chamber 11 as necessary. A flat plate-shaped substrate holder 12 having a decompression device 15 for creating an atmosphere, a substrate holding portion 14 rotatably provided in the internal space of the film forming chamber 11 and holding the substrate S on one main surface, and a substrate holder 12 are provided. A rotating drive device 13, a sputter electrode 16 provided in the internal space of the film forming chamber 11, a plasma generating device 17 also provided in the internal space of the film forming chamber 11, and a discharge in the internal space of the film forming chamber 11. A gas introduction device 18 for introducing a gas and a reaction gas as needed is provided.

成膜チャンバ１１は、実質的に密閉空間を形成する中空筐体からなり、たとえば図１Ｂに示すように平面視において四角形とされている。成膜チャンバ１１の４つの側壁面の一つに、図１Ａに示すようにゲート１１１が設けられ、ここから基板Ｓ（基板ホルダ１２又は基板保持部１４と共にでもよい）の搬入及び搬出が行われる。また、図示を省略するが、成膜チャンバ１１の底壁面には、ターボ分子ポンプなどの減圧装置１５の吸引口が複数形成され、成膜チャンバ１１の内部空間の気体を底壁面に向かって吸引することで、必要に応じて成膜チャンバ１１を減圧雰囲気に維持する。なお、本発明のバイアス印加装置２は、成膜装置（スパッタ装置）１を減圧雰囲気で使用しながら作動させるほか、成膜チャンバ１１を大気圧雰囲気に維持した状態で作動させてもよい。 The film forming chamber 11 is composed of a hollow housing that substantially forms a closed space, and is formed as a quadrangle in a plan view as shown in FIG. 1B, for example. As shown in FIG. 1A, a gate 111 is provided on one of the four side wall surfaces of the film forming chamber 11, from which the substrate S (which may be together with the substrate holder 12 or the substrate holding portion 14) is carried in and out. .. Although not shown, a plurality of suction ports of a decompression device 15 such as a turbo molecular pump are formed on the bottom wall surface of the film forming chamber 11 to suck gas in the internal space of the film forming chamber 11 toward the bottom wall surface. By doing so, the film forming chamber 11 is maintained in a reduced pressure atmosphere as needed. The bias applying device 2 of the present invention may be operated while using the film forming apparatus (spattering apparatus) 1 in a reduced pressure atmosphere, or may be operated in a state where the film forming chamber 11 is maintained in an atmospheric pressure atmosphere.

成膜チャンバ１１の内部空間には、成膜される基板Ｓを保持するための基板ホルダ１２が設けられている。本実施形態の基板ホルダ１２は、円形・平板形状に形成され、駆動装置１３の回転軸１３１に固定され、支持されている。駆動装置１３は、たとえば電動モータからなり、この駆動装置１３を作動させることにより、基板ホルダ１２は、回転軸１３１を中心にして、所定方向に所定速度で回転する。 In the internal space of the film forming chamber 11, a substrate holder 12 for holding the substrate S to be filmed is provided. The substrate holder 12 of the present embodiment is formed in a circular or flat plate shape, and is fixed and supported on the rotating shaft 131 of the drive device 13. The drive device 13 is composed of, for example, an electric motor, and by operating the drive device 13, the substrate holder 12 rotates in a predetermined direction at a predetermined speed with the rotation shaft 131 as the center.

本実施形態の基板ホルダ１２には、複数の基板保持部１４が設けられ、それぞれの基板保持部１４に、成膜対象たる基板Ｓが載置される。本実施形態の基板ホルダ１２は、平板形状の上面に基板Ｓを保持するため、たとえば基板Ｓの位置を定めるための凹部などで構成することができる。なお、基板Ｓの自重により基板ホルダ１２から脱落する場合又はホルダ運動による力によって基板が脱落する可能性がある場合は、クランプなどの脱落防止部材を有する基板保持部１４とすることが好ましい。この基板保持部１４に設けられる第２電極２２については後述する。 The substrate holder 12 of the present embodiment is provided with a plurality of substrate holding portions 14, and the substrate S to be film-formed is placed on each of the substrate holding portions 14. Since the substrate holder 12 of the present embodiment holds the substrate S on the upper surface of the flat plate shape, it can be configured with, for example, a recess for determining the position of the substrate S. If the substrate S falls off from the substrate holder 12 due to its own weight, or if the substrate may fall off due to the force of the holder movement, it is preferable to use the substrate holding portion 14 having a dropout prevention member such as a clamp. The second electrode 22 provided on the substrate holding portion 14 will be described later.

本実施形態の成膜装置（スパッタ装置）１では、成膜チャンバ１１の内部空間のうち、基板ホルダ１２の外周領域の一部に、プラズマ発生装置１７が設けられ、ここにプラズマ処理領域Ｒ１が形成される。また、同じく成膜チャンバ１１の内部空間のうち、基板ホルダ１２の外周領域の他の一部に、スパッタ電極１６が設けられ、ここに成膜処理領域Ｒ２が形成される。 In the film forming apparatus (spattering apparatus) 1 of the present embodiment, the plasma generating apparatus 17 is provided in a part of the outer peripheral region of the substrate holder 12 in the internal space of the film forming chamber 11, and the plasma processing region R1 is provided therein. It is formed. Similarly, in the internal space of the film forming chamber 11, a sputtering electrode 16 is provided in another part of the outer peripheral region of the substrate holder 12, and the film forming processing region R2 is formed therein.

本実施形態のスパッタ電極１６は、図１Ｂの平面図に示すように、たとえば四角形の４つの辺のうち１つの辺に相当する位置に設けられている。なお、スパッタ電極１６の数量は本発明を限定するものではなく、２以上のスパッタ電極１６を設けてもよい。本実施形態のスパッタ電極１６は、詳細な図示を省略するが、一対のマグネトロンスパッタ電極と、トランスを介して接続された交流電源とを含み、マグネトロンスパッタ電極の先端には、成膜材料となるターゲットが装着される。スパッタ電極１６は、ターゲットの表面が、基板ホルダ１２の外周領域に対面するような姿勢で成膜チャンバ１１に固定され、成膜時には、電源により、例えば直流マグネトロンスパッタやパルススパッタが行われる。また例えば、カソードをデュアルカソードにして両カソードを用いて周波数１ｋ～１００ｋＨｚのバイポーラスパッタリングを行う。 As shown in the plan view of FIG. 1B, the sputter electrode 16 of the present embodiment is provided at a position corresponding to, for example, one of the four sides of the quadrangle. The number of sputtering electrodes 16 is not limited to the present invention, and two or more sputtering electrodes 16 may be provided. Although detailed illustration is omitted, the sputtering electrode 16 of the present embodiment includes a pair of magnetron sputtering electrodes and an AC power source connected via a transformer, and the tip of the magnetron sputtering electrode serves as a film forming material. The target is attached. The sputter electrode 16 is fixed to the film forming chamber 11 so that the surface of the target faces the outer peripheral region of the substrate holder 12, and at the time of film formation, for example, DC magnetron sputtering or pulse sputtering is performed by a power source. Further, for example, bipolar sputtering having a frequency of 1 k to 100 kHz is performed using both cathodes with the cathode as a dual cathode.

本実施形態のプラズマ発生装置１７は、特に限定されず、誘導結合式プラズマ（ＩＣＰ）、容量結合プラズマ（ＣＣＰ）、電子サイクロトロン共鳴プラズマ（ＥＣＲＰ）、ヘリコン波プラズマ（ＨＰ）、表面波プラズマ（ＳＷＰ）などの放電方式のいずれかを採用したプラズマ発生装置を用いることができる。プラズマ発生装置１７で使用する周波数は、たとえば０．１～１００ＭＨｚ、２．４５ＧＨｚである。なお、プラズマ発生装置１７の数量は本発明を限定するものではなく、２以上のプラズマ発生装置１７を設けてもよい。 The plasma generator 17 of the present embodiment is not particularly limited, and is not particularly limited, and is inductively coupled plasma (ICP), capacitively coupled plasma (CCP), electron cyclotron resonance plasma (ECRP), helicon wave plasma (HP), and surface wave plasma (SWP). A plasma generator that employs any of the discharge methods such as) can be used. The frequency used in the plasma generator 17 is, for example, 0.1 to 100 MHz and 2.45 GHz. The number of plasma generators 17 is not limited to the present invention, and two or more plasma generators 17 may be provided.

本実施形態のガス導入装置１８は、放電ガス（スパッタ処理においてターゲットに衝突する電子を放出するガス）を貯留するガスボンベと、必要に応じて反応ガスを貯留するガスボンベとを備える。本実施形態のガス導入装置１８は、ガスボンベに貯留された放電ガスや反応ガスを成膜チャンバ１１の内部に導入する複数のノズルを含み、それぞれのノズルからのガス流量は、マスフローコントローラにより独立して制御される。放電ガスとしては特に限定されないが、たとえばアルゴンガスなどの不活性ガスが用いられる。また反応ガスとしては、目的とする膜種に応じたガスが選択され、たとえば酸化膜である場合は酸素ガス、窒化膜である場合には窒素ガスが用いられる。なお、必ずしも反応ガスを供給する必要はないので適宜省略してもよい。 The gas introduction device 18 of the present embodiment includes a gas cylinder that stores a discharge gas (a gas that emits electrons that collide with a target in a sputtering process) and a gas cylinder that stores a reaction gas as needed. The gas introduction device 18 of the present embodiment includes a plurality of nozzles for introducing the discharge gas and the reaction gas stored in the gas cylinder into the film forming chamber 11, and the gas flow rate from each nozzle is independent by the mass flow controller. Is controlled. The discharge gas is not particularly limited, but an inert gas such as argon gas is used. As the reaction gas, a gas corresponding to the target membrane type is selected. For example, oxygen gas is used in the case of an oxide film and nitrogen gas is used in the case of a nitride film. Since it is not always necessary to supply the reaction gas, it may be omitted as appropriate.

さて、本実施形態の成膜装置（スパッタ装置）１は、いわゆるバイアススパッタ法により成膜するものである。図１Ａ及び図１Ｂは、本実施形態のバイアス印加装置２の一例を示すものである。プラズマ発生装置１７が設けられることで形成されたプラズマ処理領域Ｒ１においては、基板Ｓにバイアス電圧を印加して基板Ｓに電力を供給する。一方、プラズマ処理領域Ｒ１以外の第２領域ＳＲにおいては、基板Ｓにバイアス電圧を印加しない。そのため、本実施形態のバイアス印加装置２は、図１Ａに示すように、電源３に接続され、成膜チャンバ１１の内部空間のプラズマ処理領域Ｒ１に固定された第１電極２１と、基板Ｓと電気的に接触し、基板Ｓがプラズマ処理領域Ｒ１にあるときは第１電極２１に接近又は接触し、基板Ｓが第２領域ＳＲにあるときは第１電極２１から離間する第２電極２２とを有する。具体的に、第１電極２１は、基板Ｓの面積の総和以下の電極面積を有する。また第２電極２２は、基板ホルダ１２の各基板保持部１４に設けられている。なお、基板Ｓ側に設けられる第２電極２２は、本発明のバイアス印加装置２に必須の構成ではなく、図１２に示すように第２電極２２を省略し、第１電極２１により、基板Ｓに直接バイアスを印加してもよい。 By the way, the film forming apparatus (sputtering apparatus) 1 of the present embodiment is for forming a film by a so-called bias sputtering method. 1A and 1B show an example of the bias applying device 2 of the present embodiment. In the plasma processing region R1 formed by providing the plasma generator 17, a bias voltage is applied to the substrate S to supply electric power to the substrate S. On the other hand, in the second region SR other than the plasma processing region R1, the bias voltage is not applied to the substrate S. Therefore, as shown in FIG. 1A, the bias applying device 2 of the present embodiment includes the first electrode 21 connected to the power supply 3 and fixed to the plasma processing region R1 in the internal space of the film forming chamber 11, and the substrate S. Electrically in contact with a second electrode 22 that approaches or contacts the first electrode 21 when the substrate S is in the plasma processing region R1 and separates from the first electrode 21 when the substrate S is in the second region SR. Has. Specifically, the first electrode 21 has an electrode area equal to or less than the total area of the substrate S. Further, the second electrode 22 is provided in each substrate holding portion 14 of the substrate holder 12. The second electrode 22 provided on the substrate S side is not an essential configuration for the bias applying device 2 of the present invention. As shown in FIG. 12, the second electrode 22 is omitted, and the substrate S is provided by the first electrode 21. Bias may be applied directly to.

これにより、プラズマ発生装置１７によって豊富にイオンや電子が供給されるプラズマ処理領域Ｒ１にバイアスを印加することができるため、電源３から供給されるバイアス電力が効果的にプラズマアシストおよびイオンミリングを行える。そのため、第２領域ＳＲにもバイアスを印加する場合に比べ、電力の利用効率が良くなり、少ない電力で効果が大きくなる。 As a result, the bias can be applied to the plasma processing region R1 to which ions and electrons are abundantly supplied by the plasma generator 17, so that the bias power supplied from the power supply 3 can effectively perform plasma assist and ion milling. .. Therefore, as compared with the case where the bias is applied to the second region SR, the power utilization efficiency is improved, and the effect is increased with a small amount of power.

なお、図１Ａ及び図１Ｂに示す実施形態では、プラズマ発生装置１７が設けられたプラズマ処理領域Ｒ１に第１電極２１を固定し、ここを第１領域ＦＲとしたが、本発明に係る第１領域ＦＲは、プラズマ発生装置１７が設けられたプラズマ処理領域Ｒ１にのみ限定されない。図２Ａは、本発明に係るバイアス印加装置を用いた成膜装置（スパッタ装置）の他の実施の形態を示す断面図、図２Ｂは平面図である。図２Ａ及び図２Ｂに示す実施形態では、スパッタ電極１６が設けられた成膜処理領域Ｒ２に第１電極２１を固定し、ここを第１領域ＦＲとしたものである。スパッタ電極１６が設けられた成膜処理領域Ｒ２にもプラズマ領域が形成されるので、この成膜処理領域Ｒ２において基板Ｓにバイアス電圧を印加して基板Ｓに電力を供給してもよい。この場合、成膜処理領域Ｒ２以外の第２領域ＳＲにおいては、基板Ｓにバイアス電圧を印加しない。この場合も前述したとおりバイアス電力の改善が期待できる。 In the embodiment shown in FIGS. 1A and 1B, the first electrode 21 is fixed to the plasma processing region R1 provided with the plasma generator 17, and this is designated as the first region FR. The region FR is not limited to the plasma processing region R1 provided with the plasma generator 17. FIG. 2A is a cross-sectional view showing another embodiment of a film forming apparatus (sputtering apparatus) using the bias applying apparatus according to the present invention, and FIG. 2B is a plan view. In the embodiment shown in FIGS. 2A and 2B, the first electrode 21 is fixed to the film forming processing region R2 provided with the sputter electrode 16, and this is used as the first region FR. Since a plasma region is also formed in the film forming processing region R2 provided with the sputtering electrode 16, a bias voltage may be applied to the substrate S in the film forming processing region R2 to supply electric power to the substrate S. In this case, no bias voltage is applied to the substrate S in the second region SR other than the film forming processing region R2. In this case as well, improvement in bias power can be expected as described above.

また図１３は、本発明に係るバイアス印加装置を用いた成膜装置（スパッタ装置）の他の実施の形態を示す平面図である。図１３に示す実施形態では、成膜チャンバ１１の内部空間に複数のスパッタ電極１６が設けられ、その成膜処理領域Ｒ２の一部に第１電極２１を固定し、ここを第１領域ＦＲとしたものである。スパッタ電極１６が設けられた成膜処理領域Ｒ２にもプラズマ領域が形成されるので、この成膜処理領域Ｒ２の一部において基板Ｓにバイアス電圧を印加して基板Ｓに電力を供給してもよい。この場合、残りの成膜処理領域Ｒ２（ここが第２領域ＳＲになる）においては、基板Ｓにバイアス電圧を印加しない。この場合も前述したとおりバイアス電力の改善が期待できる。 Further, FIG. 13 is a plan view showing another embodiment of the film forming apparatus (sputtering apparatus) using the bias applying apparatus according to the present invention. In the embodiment shown in FIG. 13, a plurality of sputtering electrodes 16 are provided in the internal space of the film forming chamber 11, and the first electrode 21 is fixed to a part of the film forming processing region R2, and this is referred to as the first region FR. It was done. Since a plasma region is also formed in the film formation processing region R2 provided with the sputtering electrode 16, even if a bias voltage is applied to the substrate S in a part of the film formation processing region R2 to supply electric power to the substrate S. good. In this case, no bias voltage is applied to the substrate S in the remaining film formation processing region R2 (this becomes the second region SR). In this case as well, improvement in bias power can be expected as described above.

本発明に係る第２領域ＳＲとは、成膜チャンバ１１の内部空間のうち、第１領域ＦＲ以外の領域をいう。たとえば、図１Ｂに示すように第１領域ＦＲがプラズマ処理領域Ｒ１である場合、第２領域ＳＲは、成膜処理領域Ｒ２と、成膜処理領域Ｒ２でない領域とを含むこともあり、また図示はしないが第２領域ＳＲは、スパッタ電極１６が設けられた成膜処理領域Ｒ２に等しいこともある。また、図２Ｂに示すように第１領域ＦＲが成膜処理領域Ｒ２である場合、第２領域ＳＲは、プラズマ処理領域Ｒ１と、プラズマ処理領域Ｒ１でない領域とを含むこともあり、また図示はしないが第２領域ＳＲは、プラズマ発生装置１７が設けられたプラズマ処理領域Ｒ１に等しいこともある。 The second region SR according to the present invention refers to a region other than the first region FR in the internal space of the film forming chamber 11. For example, when the first region FR is the plasma processing region R1 as shown in FIG. 1B, the second region SR may include a film forming processing region R2 and a region other than the film forming processing region R2, and is not shown. Although not, the second region SR may be equal to the film forming processing region R2 provided with the sputter electrode 16. Further, as shown in FIG. 2B, when the first region FR is the film forming processing region R2, the second region SR may include a plasma processing region R1 and a region other than the plasma processing region R1, and is not shown in the drawing. However, the second region SR may be equal to the plasma processing region R1 provided with the plasma generator 17.

図３は、基板ホルダ１２の一つの基板保持部１４に設けられる第２電極２２を示す分解斜視図である。本実施形態の第２電極２２は、基板Ｓ（図示する基板は、たとえばシリコンウェーハ）が載置されて直接接触する上板２２１と、第１電極２１と対面する下板２２２と、これら上板２２１と下板２２２とを接続するジョイント２２３と、上板２２１と下板２２２と間に介装され、基板ホルダ１２と第２電極２２とを電気的に絶縁するための絶縁プレート２３，２４とを有する。上板２２１、下板２２２及びジョイント２２３が、Ｃｕ、Ｃｕ合金、Ａｌ、Ａｌ合金、ＳＵＳ、Ｐｔ、Ａｕ、カーボンなどの導体からなり、第１電極２１から印加されたバイアス電力は、下板２２２で受電し、ジョイント２２３を介して上板２２１に導き、基板Ｓに印加する。なお、第２電極２２の構成は、図３に示すものに限定されず、基板ホルダ１２との電気的絶縁が確保できる限り、上板２２１と下板２２２のいずれか一方の構造としてもよい。 FIG. 3 is an exploded perspective view showing a second electrode 22 provided on one board holding portion 14 of the board holder 12. The second electrode 22 of the present embodiment includes an upper plate 221 on which a substrate S (the substrate shown is, for example, a silicon wafer) is placed and in direct contact with the second electrode 22, a lower plate 222 facing the first electrode 21, and these upper plates. A joint 223 connecting the 221 and the lower plate 222, and insulating plates 23 and 24 interposed between the upper plate 221 and the lower plate 222 to electrically insulate the substrate holder 12 and the second electrode 22. Have. The upper plate 221 and the lower plate 222 and the joint 223 are made of conductors such as Cu, Cu alloy, Al, Al alloy, SUS, Pt, Au, and carbon, and the bias power applied from the first electrode 21 is the lower plate 222. Is received, guided to the upper plate 221 via the joint 223, and applied to the substrate S. The configuration of the second electrode 22 is not limited to that shown in FIG. 3, and may be one of the upper plate 221 and the lower plate 222 as long as electrical insulation with the substrate holder 12 can be ensured.

図１Ａに示すように、本実施形態の第１電極２１と第２電極２２とは非接触式でバイアスが印加されるので、第１電極２１が接続される電源３は、交流電源であって、特に限定はされないがたとえば１３．５６ＭＨｚの高周波交流電源である。また、所定のギャップを介して第２電極２２と対面する第１電極２１は、第２電極２２と同様に、Ｃｕ、Ｃｕ合金、Ａｌ、Ａｌ合金、ＳＵＳ、Ｐｔ、Ａｕ、カーボンなどの導体から構成することができる。 As shown in FIG. 1A, since the first electrode 21 and the second electrode 22 of the present embodiment are non-contact and bias is applied, the power supply 3 to which the first electrode 21 is connected is an AC power supply. Although not particularly limited, for example, it is a high frequency AC power supply of 13.56 MHz. Further, the first electrode 21 facing the second electrode 22 via a predetermined gap is made of a conductor such as Cu, Cu alloy, Al, Al alloy, SUS, Pt, Au, carbon, etc., similarly to the second electrode 22. Can be configured.

これら第１電極２１と第２電極２２は非接触で対面することから、両電極及びギャップは、コンデンサとみなすことができる。コンデンサの容量性リアクタンス（交流における抵抗）Ｘｃは、コンデンサの静電容量をＣ，交流の周波数をｆとしたときに、Ｘｃ＝１／（２πｆＣ）で表せるから、コンデンサの静電容量Ｃを大きくするか、交流の周波数ｆを高くすることで、コンデンサの容量性リアクタンスを下げることができる。したがって、第１電極２１と第２電極２２とギャップで構成されるコンデンサの容量性リアクタンスを小さくしてバイアスエッチング処理を効率的に行うためには、コンデンサの静電容量を大きくすることが有効である。 Since the first electrode 21 and the second electrode 22 face each other in a non-contact manner, both electrodes and the gap can be regarded as a capacitor. Capacitance reactance (resistance in alternating current) Xc of a capacitor can be expressed as Xc = 1 / (2πfC) when the capacitance of the capacitor is C and the frequency of alternating current is f. Therefore, the capacitance C of the capacitor is increased. By increasing the AC frequency f, the capacitive reactance of the capacitor can be lowered. Therefore, in order to reduce the capacitive reactance of the capacitor composed of the first electrode 21, the second electrode 22, and the gap and efficiently perform the bias etching process, it is effective to increase the capacitance of the capacitor. be.

ここで、コンデンサの静電容量Ｃは、誘電率をε，対面する電極面積をＡ，電極間距離をｄとしたときにＣ＝εＡ／ｄで表せるため、電極面積Ａを大きくするか、電極間距離Ｄを小さくすることで、静電容量Ｃを大きくすることができる。ただし、電極間距離ｄが小さ過ぎると、第１電極２１と第２電極２２とが干渉する可能性があるため、電極間距離ｄを小さくするにも限界がある。したがって、電極間距離ｄを可能な限り小さく設定した上で、第１電極２１と第２電極２２との対面する電極面積Ａを大きくすることが、静電容量Ｃを増加させることに対し有効である。 Here, the capacitance C of the capacitor can be expressed as C = εA / d when the dielectric constant is ε, the facing electrode area is A, and the distance between the electrodes is d. Therefore, the electrode area A should be increased or the electrode should be increased. By reducing the distance D, the capacitance C can be increased. However, if the distance d between the electrodes is too small, the first electrode 21 and the second electrode 22 may interfere with each other, so that there is a limit to reducing the distance d between the electrodes. Therefore, it is effective to increase the electrostatic capacity C by setting the distance d between the electrodes as small as possible and then increasing the electrode area A facing the first electrode 21 and the second electrode 22. be.

図４は、プラズマ処理領域Ｒ１に固定された第１電極２１と、プラズマ処理領域Ｒ１を通過する第２電極２２とを示す平面図であり、第１電極２１は図示する位置に固定されている一方で、１つの第２電極２２は、図示する基板ホルダ１２の回転軌跡ＴＲに沿って回転移動する。したがって、第１電極２１及び第２電極２２を図４に示すように扇形に形成すると、第２電極２２が、基板ホルダ１２の回転によって描かれる回転軌跡ＴＲに沿って、プラズマ処理領域Ｒ１の始点から終点まで移動する間に、第１電極２１と対面する面積（第２電極２２に回転移動にともなって時間的に変化するので時間的積分値を考える。）が最大になる。なお、図示する第１電極２１と第２電極２２は、扇形そのものではなく中心部分が削落された形状とされているが、扇形であってもよい。 FIG. 4 is a plan view showing a first electrode 21 fixed to the plasma processing region R1 and a second electrode 22 passing through the plasma processing region R1, and the first electrode 21 is fixed to the position shown in the drawing. On the other hand, one second electrode 22 rotates and moves along the rotation locus TR of the illustrated substrate holder 12. Therefore, when the first electrode 21 and the second electrode 22 are formed in a fan shape as shown in FIG. 4, the second electrode 22 is the starting point of the plasma processing region R1 along the rotation locus TR drawn by the rotation of the substrate holder 12. While moving from to the end point, the area facing the first electrode 21 (since it changes temporally with the rotational movement to the second electrode 22, the time integral value is considered) becomes maximum. Although the first electrode 21 and the second electrode 22 shown in the figure are not fan-shaped but have a shape in which the central portion is cut off, they may be fan-shaped.

図１Ａに示すように、第１電極２１は、基板ホルダ１２の基板保持部１４の裏面から第２電極２２の下板２２２に対面するように設けられている。第２電極２２は、上板２２１の部分において絶縁プレート２３，２４により基板ホルダ１２と電気的に絶縁されているので、第１電極２１から給電された電荷が基板ホルダ１２に漏電することはないが、回転軸１３１との間に絶縁シールド１２１を設けることで、基板ホルダ１２を、接地電位に対してフローティング電位にすることがより好ましい。 As shown in FIG. 1A, the first electrode 21 is provided so as to face the lower plate 222 of the second electrode 22 from the back surface of the substrate holding portion 14 of the substrate holder 12. Since the second electrode 22 is electrically insulated from the substrate holder 12 by the insulating plates 23 and 24 at the upper plate 221 portion, the electric charge supplied from the first electrode 21 does not leak to the substrate holder 12. However, it is more preferable that the substrate holder 12 has a floating potential with respect to the ground potential by providing the insulating shield 121 between the rotating shaft 131 and the rotating shaft 131.

また、図１Ａに示すように、基板ホルダ１２の基板保持部１４の裏面において、第１電極２１と第２電極２２が対面する領域をシールド壁２５で取り囲み、第１電極２１と第２電極２２の周りにガス導入装置１８から導入された放電ガスや反応ガスが廻り込むのを防止する。これに加えて、シールド壁２５で囲まれた領域を排気する高真空排気ポンプ２６（ターボ分子ポンプＴＭＰ、クライオポンプ、ゲッターポンプ、イオンポンプなど）を設けてもよい。なお、シールド壁２５の電位は接地またはフローティング電位とする。シールド壁２５を設けることで、放電ガスや反応ガスが第１電極２１と第２電極２２の周りに存在することが抑制されるので、ここにプラズマが発生するのを防止することができる。またこれに加えて、高真空排気ポンプ２６により、この領域をプラズマが生じない程度の高真空に制御することもできる。 Further, as shown in FIG. 1A, on the back surface of the substrate holding portion 14 of the substrate holder 12, the region where the first electrode 21 and the second electrode 22 face each other is surrounded by the shield wall 25, and the first electrode 21 and the second electrode 22 are surrounded. It prevents the discharge gas and the reaction gas introduced from the gas introduction device 18 from wrapping around the. In addition to this, a high vacuum exhaust pump 26 (turbomolecular pump TMP, cryopump, getter pump, ion pump, etc.) for exhausting the area surrounded by the shield wall 25 may be provided. The potential of the shield wall 25 is grounded or floating potential. By providing the shield wall 25, it is possible to prevent the discharge gas and the reaction gas from being present around the first electrode 21 and the second electrode 22, so that plasma can be prevented from being generated here. In addition to this, the high vacuum exhaust pump 26 can control this region to a high vacuum to the extent that plasma is not generated.

以上のように構成された本実施形態の成膜装置（スパッタ装置）１では、図１Ａに示すプラズマ発生装置１７と基板ホルダ１２の上面との間にプラズマ処理領域Ｒ１が形成され、スパッタ電極１６と基板ホルダ１２の上面との間に成膜処理領域Ｒ２が、形成される。これらプラズマ処理領域Ｒ１と成膜処理領域Ｒ２との間には明確な境界面はないが、基板ホルダ１２の上面の基板保持部１４に載置された基板Ｓは、成膜チャンバ１１内で回転軸１３１を中心に回転を繰り返す間に、規則的な周期で成膜処理領域Ｒ２とプラズマ処理領域Ｒ１とを通過することになる。 In the film forming apparatus (sputtering apparatus) 1 of the present embodiment configured as described above, the plasma processing region R1 is formed between the plasma generating apparatus 17 shown in FIG. 1A and the upper surface of the substrate holder 12, and the sputtering electrode 16 is formed. A film forming processing region R2 is formed between the substrate holder 12 and the upper surface of the substrate holder 12. Although there is no clear boundary surface between the plasma processing region R1 and the film forming region R2, the substrate S placed on the substrate holding portion 14 on the upper surface of the substrate holder 12 rotates in the film forming chamber 11. While repeating the rotation about the shaft 131, the film forming region R2 and the plasma processing region R1 pass through at regular intervals.

そして、成膜処理領域Ｒ２を通過する成膜時には、ガス導入装置１８で流量が調整された放電ガスが成膜チャンバ１１内に導かれるとともに、必要に応じて酸素ガスや窒素ガスなどの反応ガスが成膜チャンバ１１内に導かれ、成膜処理領域Ｒ２でスパッタを行うための雰囲気が調整される。そして、スパッタ電極１６においてマグネトロンスパッタを行う。このスパッタにより、ターゲットから膜原料物質が基板Ｓへ向けて供給され、基板Ｓの表面に金属膜又は不完全金属化合物からなる中間薄膜が形成される。成膜処理領域Ｒ２を含む第２領域ＳＲを通過中の基板Ｓには、当該基板Ｓが電気的に接触する第２電極２２が、第１電極２１と離れているため、電源３からのバイアスは印加されない。またことのき、基板Ｓが、プラズマおよび導入ガスが積極的に供給されていない第２領域ＳＲを通過する際は、バイアス電力を基板Ｓに対して給電しても、バイアスによるアシストやエッチング効果は発現されない。 Then, at the time of film formation passing through the film formation processing region R2, the discharge gas whose flow rate is adjusted by the gas introduction device 18 is guided into the film formation chamber 11, and if necessary, a reaction gas such as oxygen gas or nitrogen gas is introduced. Is guided into the film forming chamber 11, and the atmosphere for performing sputtering in the film forming processing region R2 is adjusted. Then, magnetron sputtering is performed on the sputtering electrode 16. By this sputtering, the film raw material is supplied from the target toward the substrate S, and an intermediate thin film made of a metal film or an incomplete metal compound is formed on the surface of the substrate S. Since the second electrode 22 with which the substrate S is electrically in contact with the substrate S passing through the second region SR including the film forming processing region R2 is separated from the first electrode 21, a bias from the power supply 3 is provided. Is not applied. Further, when the substrate S passes through the second region SR to which the plasma and the introduced gas are not positively supplied, even if the bias power is supplied to the substrate S, the assist and etching effect due to the bias are obtained. Is not expressed.

一方、成膜チャンバ１１内のプラズマ処理領域Ｒ１では、ガス導入装置１８で流量が調整された放電ガスが成膜チャンバ１１内に導かれ、プラズマ処理領域Ｒ１でプラズマ処理を行うための雰囲気が調整される。また、プラズマ発生装置１７により、プラズマ処理領域Ｒ１に放電ガスのプラズマが発生している。プラズマ発生装置１７から供給されるイオン種及びラジカル種は、ある程度の緩和時間を有し、プラズマが集中しているプラズマ発生装置１７から、たとえば１００～２００ｍｍ程度の一定の距離があっても、基板Ｓにイオン種やラジカル種を供給することができる。そして、プラズマ処理領域Ｒ１を通過中の基板Ｓには、当該基板Ｓが電気的に接触する第２電極２２が、第１電極２１と対面することになるため、電源３からのバイアスが印加される。そのため、成膜処理領域Ｒ２を通過してきた基板Ｓがプラズマ処理領域Ｒ１を通過する間は、基板Ｓに印加されたバイアスによってプラズマ内に存在する正イオンが、基板Ｓの近傍に発生したシース電解によって加速されて衝突し、中間薄膜のプラズマフィジカルエッチング処理が施されることになる。このようにして、基板Ｓが、成膜処理領域Ｒ２とプラズマ処理領域Ｒ１とを周期的に通過することで最終的に所望の薄膜が形成されることになる。 On the other hand, in the plasma processing region R1 in the film forming chamber 11, the discharge gas whose flow rate is adjusted by the gas introduction device 18 is guided into the film forming chamber 11, and the atmosphere for performing plasma processing in the plasma processing region R1 is adjusted. Will be done. Further, the plasma generator 17 generates plasma of the discharge gas in the plasma processing region R1. The ion species and radical species supplied from the plasma generator 17 have a certain relaxation time, and even if there is a certain distance of, for example, about 100 to 200 mm from the plasma generator 17 in which the plasma is concentrated, the substrate Ion species and radical species can be supplied to S. Then, since the second electrode 22 with which the substrate S is electrically in contact faces the first electrode 21 on the substrate S passing through the plasma processing region R1, a bias from the power supply 3 is applied. To. Therefore, while the substrate S that has passed through the film formation processing region R2 passes through the plasma processing region R1, positive ions existing in the plasma due to the bias applied to the substrate S are generated in the vicinity of the substrate S for sheath electrolysis. It will be accelerated and collide with each other, and the plasma physical etching process of the intermediate thin film will be applied. In this way, the substrate S periodically passes through the film formation processing region R2 and the plasma processing region R1, so that a desired thin film is finally formed.

以上のように、本実施形態のバイアス印加装置２を備えた成膜装置（スパッタ装置）１によれば、必要とされるプラズマ処理領域Ｒ１を通過中の基板Ｓのみにバイアスを印加し、それ以外の第２領域ＳＲを通過中の基板Ｓに対してはバイアスを印加しないので、電源３から供給される電力が全てプラズマ処理領域Ｒ１を通過中の基板Ｓに供給されることになる。これにより、給電効率が高くプラズマ処理効果に優れた成膜装置（スパッタ装置）１を提供することができる。 As described above, according to the film forming apparatus (sputtering apparatus) 1 provided with the bias applying apparatus 2 of the present embodiment, the bias is applied only to the substrate S passing through the required plasma processing region R1. Since no bias is applied to the substrate S passing through the second region SR other than the above, all the electric power supplied from the power supply 3 is supplied to the substrate S passing through the plasma processing region R1. This makes it possible to provide a film forming apparatus (sputtering apparatus) 1 having high power feeding efficiency and excellent plasma processing effect.

なお、上述した実施形態は本発明を限定するものではなく、適宜の範囲で改変することができる。以下、上述した実施形態の変形例を説明する。 The above-described embodiment is not limited to the present invention, and can be modified as appropriate. Hereinafter, a modified example of the above-described embodiment will be described.

第１電極２１の固定位置について、図１Ａに示す実施形態では基板保持部１４の裏面側に設定したが、本発明のバイアス印加装置２はこれにのみ限定されず、基板保持部１４の表面側に１つの第１電極２１を固定してもよく、又は基板保持部１４の裏面側と表面側の両方に２つの第１電極２１を固定してもよい。図５は、本発明に係るバイアス印加装置２を用いた成膜装置（スパッタ装置）１の他の実施の形態を示す断面図である。同図に示す成膜装置（スパッタ装置）１では、プラズマ処理領域Ｒ１において、基板ホルダ１２の基板保持部１４の裏面側と表面側の両方に２つの第１電極２１が固定されている。また、同図に示す成膜装置（スパッタ装置）１では、第２電極２２が上板のみの構造とされている。 In the embodiment shown in FIG. 1A, the fixing position of the first electrode 21 is set on the back surface side of the substrate holding portion 14, but the bias applying device 2 of the present invention is not limited to this, and the front surface side of the substrate holding portion 14 is set. One first electrode 21 may be fixed to, or two first electrodes 21 may be fixed to both the back surface side and the front surface side of the substrate holding portion 14. FIG. 5 is a cross-sectional view showing another embodiment of the film forming apparatus (sputtering apparatus) 1 using the bias applying apparatus 2 according to the present invention. In the film forming apparatus (sputtering apparatus) 1 shown in the figure, two first electrodes 21 are fixed to both the back surface side and the front surface side of the substrate holding portion 14 of the substrate holder 12 in the plasma processing region R1. Further, in the film forming apparatus (sputtering apparatus) 1 shown in the figure, the second electrode 22 has a structure of only the upper plate.

基板ホルダ１２の基板保持部１４について、図１Ａに示す実施形態では基板ホルダ１２に対して回転しない基板保持部１４に構成したが、基板保持部１４は基板ホルダ１２に対して回転するように設けられ、基板Ｓは、基板保持部１４による自転と、基板ホルダ１２による公転とを含む遊星回転を行うように構成してもよい。図６は、本発明に係るバイアス印加装置２を用いた成膜装置（スパッタ装置）１のさらに他の実施の形態を示す断面図である。同図に示す成膜装置（スパッタ装置）１では、各基板保持部１４は、ベアリング１４１を介して基板ホルダ１２に回転自在に設けられている。また基板ホルダ１２の回転軸１３１には遊星ギヤの一方１２２が設けられ、各基板保持部１４には遊星ギヤの他方１２３が設けられている。これらの遊星ギヤの一方１２２と他方１２３とが噛み合い、基板ホルダ１２が回転することにより、基板保持部１４に保持された基板Ｓは、基板保持部１４による自転と、基板ホルダ１２による公転とを含む遊星回転を行うことになる。 The substrate holding portion 14 of the substrate holder 12 is configured as a substrate holding portion 14 that does not rotate with respect to the substrate holder 12 in the embodiment shown in FIG. 1A, but the substrate holding portion 14 is provided so as to rotate with respect to the substrate holder 12. The substrate S may be configured to rotate on a planet including rotation by the substrate holding portion 14 and revolution by the substrate holder 12. FIG. 6 is a cross-sectional view showing still another embodiment of the film forming apparatus (sputtering apparatus) 1 using the bias applying apparatus 2 according to the present invention. In the film forming apparatus (sputtering apparatus) 1 shown in the figure, each substrate holding portion 14 is rotatably provided on the substrate holder 12 via a bearing 141. Further, the rotating shaft 131 of the substrate holder 12 is provided with one 122 of the planetary gears, and each substrate holding portion 14 is provided with the other 123 of the planetary gears. When one of the planetary gears 122 and the other 123 mesh with each other and the substrate holder 12 rotates, the substrate S held by the substrate holding portion 14 rotates on its axis by the substrate holding portion 14 and revolves on the substrate holder 12. It will perform planetary rotation including.

基板ホルダ１２の形状について、図１Ａに示す実施形態では平板形状の基板ホルダ１２としたが、外側面に複数の基板Ｓを保持する基板保持部１４を有し、回転軸１３１を中心に回転するドラム形状の基板ホルダ１２（いわゆるカルーセルドラム）にしてもよい。図７は、本発明に係るバイアス印加装置２を用いた成膜装置（スパッタ装置）１のさらに他の実施の形態を示す断面図である。同図に示す成膜装置（スパッタ装置）１では、ドラム形状の基板ホルダ１２を備え、その外側面に基板Ｓを保持する複数の基板保持部１４が形成されている。また、成膜チャンバ１１の側面の一部にスパッタ電極１６が設けられ、同じく成膜チャンバ１１の側面の他の一部にプラズマ発生装置１７が設けられている。これにより、スパッタ電極１６が設けられた領域が成膜処理領域Ｒ２となり、プラズマ発生装置１７が設けられた領域がプラズマ処理領域Ｒ１となる。 Regarding the shape of the substrate holder 12, although the substrate holder 12 has a flat plate shape in the embodiment shown in FIG. 1A, it has a substrate holding portion 14 for holding a plurality of substrates S on the outer surface and rotates about a rotation shaft 131. A drum-shaped substrate holder 12 (so-called carousel drum) may be used. FIG. 7 is a cross-sectional view showing still another embodiment of the film forming apparatus (sputtering apparatus) 1 using the bias applying apparatus 2 according to the present invention. The film forming apparatus (sputtering apparatus) 1 shown in the figure is provided with a drum-shaped substrate holder 12, and a plurality of substrate holding portions 14 for holding the substrate S are formed on the outer surface thereof. Further, a sputtering electrode 16 is provided on a part of the side surface of the film forming chamber 11, and a plasma generator 17 is also provided on another part of the side surface of the film forming chamber 11. As a result, the region where the sputtering electrode 16 is provided becomes the film forming processing region R2, and the region where the plasma generator 17 is provided becomes the plasma processing region R1.

鉛直方向に延在する回転軸１３１を中心に回転するドラム形状の基板ホルダ１２を備える成膜装置（スパッタ装置）１では、図７に示すようにそれぞれの基板保持部１４に第２電極２２の上板２２１が設けられ、ジョイント２２３を介して下板２２２が基板ホルダ１２の天井面に設けられている。また、電源３に接続された第１電極２１は、プラズマ発生装置１７が設けられたプラズマ処理領域Ｒ１の成膜チャンバ１１の内部空間に固定されている。そして、プラズマ処理領域Ｒ１に回転移動してきた第２電極２２の下板２２２が、所定のギャップを介して第１電極２１に対面することで、プラズマ処理領域Ｒ１に回転移動してきた基板Ｓのみに電源３からのバイアスが印加される。 In the film forming apparatus (spattering apparatus) 1 provided with a drum-shaped substrate holder 12 that rotates about a rotating shaft 131 extending in the vertical direction, as shown in FIG. 7, each substrate holding portion 14 has a second electrode 22. The upper plate 221 is provided, and the lower plate 222 is provided on the ceiling surface of the substrate holder 12 via the joint 223. Further, the first electrode 21 connected to the power supply 3 is fixed in the internal space of the film forming chamber 11 of the plasma processing region R1 provided with the plasma generator 17. Then, the lower plate 222 of the second electrode 22 that has been rotationally moved to the plasma processing region R1 faces the first electrode 21 through a predetermined gap, so that only the substrate S that has been rotationally moved to the plasma processing region R1 can be reached. A bias from the power supply 3 is applied.

これら第１電極２１と第２電極２２との配置位置や構造は図７に示すものに限定されず、適宜改変することができる。図８及び図９は、本発明に係るバイアス印加装置２を用いた成膜装置（スパッタ装置）１のさらに他の実施の形態を示す断面図である。図８に示す成膜装置（スパッタ装置）１では、第２電極２２が基板保持部１４に設けられ、第１電極２１はドラム形状の基板ホルダ１２の内部において第２電極２２に対面するように、電源３からの電線が回転軸１３１の内部を貫通して配策されている。また図９に示す成膜装置（スパッタ装置）１では、第２電極２２が基板保持部１４に設けられ、第１電極２１はドラム形状の基板ホルダ１２の内部において第２電極２２に対面するように、電源３からの電線が、削落された基板ホルダ１２のドラム形状の底面を貫通して配策されている。このように構成された成膜装置（スパッタ装置）１においても、プラズマ処理領域Ｒ１に回転移動してきた第２電極２２が、所定のギャップを介して第１電極２１に対面することで、プラズマ処理領域Ｒ１に回転移動してきた基板Ｓのみに電源３からのバイアスが印加される。 The arrangement position and structure of the first electrode 21 and the second electrode 22 are not limited to those shown in FIG. 7, and can be appropriately modified. 8 and 9 are cross-sectional views showing still another embodiment of the film forming apparatus (sputtering apparatus) 1 using the bias applying apparatus 2 according to the present invention. In the film forming apparatus (sputtering apparatus) 1 shown in FIG. 8, the second electrode 22 is provided on the substrate holding portion 14, and the first electrode 21 faces the second electrode 22 inside the drum-shaped substrate holder 12. , The electric wire from the power source 3 penetrates the inside of the rotating shaft 131 and is arranged. Further, in the film forming apparatus (sputtering apparatus) 1 shown in FIG. 9, the second electrode 22 is provided in the substrate holding portion 14, and the first electrode 21 faces the second electrode 22 inside the drum-shaped substrate holder 12. In addition, the electric wire from the power supply 3 is arranged so as to penetrate the bottom surface of the drum shape of the scraped board holder 12. Also in the film forming apparatus (sputtering apparatus) 1 configured in this way, the second electrode 22 that has been rotationally moved to the plasma processing region R1 faces the first electrode 21 through a predetermined gap, thereby performing plasma processing. The bias from the power supply 3 is applied only to the substrate S that has been rotationally moved to the region R1.

なお図示は省略するが、図７～図９に示すドラム形状の基板ホルダ１２を備える成膜装置（スパッタ装置）１においても、第１電極２１の固定位置について、同図に示す実施形態のように基板保持部１４の裏面側に設定することのみに限定されず、図５に示すように、基板保持部１４の表面側に１つの第１電極２１を固定してもよく又は基板保持部１４の裏面側と表面側の両方に２つの第１電極２１を固定してもよい。また図７～図９に示した成膜装置（スパッタ装置）１はプラズマ発生装置１７側に第１電極２１を配置したが、スパッタ電極１６側に配置してバイアスを基板Sに対し印加してもよい。 Although not shown, even in the film forming apparatus (sputtering apparatus) 1 provided with the drum-shaped substrate holder 12 shown in FIGS. 7 to 9, the fixing position of the first electrode 21 is as in the embodiment shown in the figure. The setting is not limited to the back surface side of the substrate holding portion 14, and as shown in FIG. 5, one first electrode 21 may be fixed to the front surface side of the substrate holding portion 14 or the substrate holding portion 14 may be fixed. The two first electrodes 21 may be fixed to both the back surface side and the front surface side of the above. Further, in the film forming apparatus (sputtering apparatus) 1 shown in FIGS. 7 to 9, the first electrode 21 is arranged on the plasma generating apparatus 17 side, but the first electrode 21 is arranged on the sputtering electrode 16 side and a bias is applied to the substrate S. May be good.

第１電極２１と第２電極２２との接触方式について、図１Ａ～図９に示す実施形態では非接触式としたが、本発明のバイアス印加装置２においては接触式であってもよい。図１０は、本発明に係るバイアス印加装置２を用いた成膜装置（スパッタ装置）１のさらに他の実施の形態を示す図であって、第１電極２１と第２電極２２との接触部分を拡大した断面図である。同図に示すように、プラズマ処理領域Ｒ１において、第１電極２１と第２電極２２とは直接接触することで、電源３からのバイアスが第１電極２１及び第２電極２２を介して基板Ｓに印加されるが、第２電極２２は基板ホルダ１２の回転にともなって回転移動しながら第１電極２１に摺接する。そのため、接触し始める際の衝撃を吸収したり接触中の過度な負荷を吸収したりするために、第１電極２１及び／又は第２電極２２に弾性体２７，２８を設けることが好ましい。なお、図１０に示すように第１電極２１と第２電極２２とが直接接触する方式においては、電源３として、交流電源のほかに、直流電源、直流及び交流の重畳電源、パルス電源を使用してもよい。 The contact method between the first electrode 21 and the second electrode 22 is a non-contact type in the embodiments shown in FIGS. 1A to 9, but may be a contact type in the bias applying device 2 of the present invention. FIG. 10 is a diagram showing still another embodiment of the film forming apparatus (sputtering apparatus) 1 using the bias applying apparatus 2 according to the present invention, and is a view showing a contact portion between the first electrode 21 and the second electrode 22. It is an enlarged cross-sectional view. As shown in the figure, in the plasma processing region R1, the first electrode 21 and the second electrode 22 are in direct contact with each other, so that the bias from the power supply 3 is applied to the substrate S via the first electrode 21 and the second electrode 22. However, the second electrode 22 slides into contact with the first electrode 21 while rotating and moving with the rotation of the substrate holder 12. Therefore, it is preferable to provide elastic bodies 27 and 28 on the first electrode 21 and / or the second electrode 22 in order to absorb the impact at the start of contact and the excessive load during contact. As shown in FIG. 10, in the method in which the first electrode 21 and the second electrode 22 are in direct contact with each other, in addition to the AC power supply, a DC power supply, a DC and AC superimposition power supply, and a pulse power supply are used as the power supply 3. You may.

本実施形態の非接触方式に係るバイアス印加装置２の給電効率を高めるために、第１電極２１及び第２電極２２を図４に示すように扇形に形成することが好ましいことは既述した。第１電極２１と第２電極２２との対面する面積が最大になるからである。図４に示す実施形態では、第１電極２１の一つの面と第２電極２２の一つの面とが対面している構造であるが、一方の電極の他の面を用いて対面する面積をより大きくしてもよい。図１１は、本発明に係るバイアス印加装置２を用いた成膜装置（スパッタ装置）１のさらに他の実施の形態を示す図であって、第１電極２１と第２電極２２との非接触部分を拡大した断面図である。同図に示す実施形態では、所定のギャップを介して対面する第２電極２２は、表面２２Ａとその裏側の裏面２２Ｂとを有し、第１電極２１は、第２電極２２の表面２２Ａに対面する面２１Ａと、第２電極２２の裏面２２Ｂに対面する他の面２１Ｂをと有するように、第１電極２１が第２電極２２を取り囲むように形成されている。なお、第１電極２１は、第２電極２２の表面２２Ａ、裏面２２Ｂ及び一対の側面（厚み部分）を取り囲むように形成されているが、４面ある側面のうちの他の一対の側面に対しては対面せず、第２電極２２が通過できる形状とされている。 As described above, it is preferable to form the first electrode 21 and the second electrode 22 in a fan shape as shown in FIG. 4 in order to increase the feeding efficiency of the bias applying device 2 according to the non-contact method of the present embodiment. This is because the area where the first electrode 21 and the second electrode 22 face each other is maximized. In the embodiment shown in FIG. 4, one surface of the first electrode 21 and one surface of the second electrode 22 face each other, but the area facing each other using the other surface of one electrode is determined. It may be larger. FIG. 11 is a diagram showing still another embodiment of the film forming apparatus (sputtering apparatus) 1 using the bias applying apparatus 2 according to the present invention, in which the first electrode 21 and the second electrode 22 are not in contact with each other. It is a sectional view which enlarged the part. In the embodiment shown in the figure, the second electrode 22 facing through a predetermined gap has a front surface 22A and a back surface 22B on the back side thereof, and the first electrode 21 faces the surface 22A of the second electrode 22. The first electrode 21 is formed so as to surround the second electrode 22 so as to have a surface 21A and another surface 21B facing the back surface 22B of the second electrode 22. The first electrode 21 is formed so as to surround the front surface 22A, the back surface 22B, and the pair of side surfaces (thickness portions) of the second electrode 22, but with respect to the other pair of side surfaces among the four side surfaces. The shape is such that the second electrode 22 can pass through without facing each other.

上述した実施形態の成膜装置（スパッタ装置）１は、平板形状又はドラム形状の基板ホルダ１２が成膜チャンバ１１内において回転することにより基板Ｓに所定材料の薄膜を成膜するものであるが、いわゆるインライン型成膜装置１にも本発明のバイアス印加装置２を適用することができる。図１４は、本発明に係るバイアス印加装置２を用いた成膜装置１の他の実施の形態（スパッタ装置）を示す断面図である。本実施形態の成膜装置（スパッタ装置）１では、基板Ｓは平板形状の基板ホルダ１２（トレイとも称される）に載置され、この基板ホルダ１２が、ローラコンベアなどの水平搬送機構１１２により、図示する左の入口側から右の出口側に向かって直線状に搬送される。ここで、基板ホルダ１２の搬送経路の所定箇所、たとえばスパッタ電極１６が設けられた箇所などに本実施形態のバイアス印加装置２を固定する。 In the film forming apparatus (sputtering apparatus) 1 of the above-described embodiment, the flat plate-shaped or drum-shaped substrate holder 12 rotates in the film forming chamber 11 to form a thin film of a predetermined material on the substrate S. The bias applying device 2 of the present invention can also be applied to the so-called in-line film forming apparatus 1. FIG. 14 is a cross-sectional view showing another embodiment (sputtering device) of the film forming apparatus 1 using the bias applying apparatus 2 according to the present invention. In the film forming apparatus (spattering apparatus) 1 of the present embodiment, the substrate S is placed on a flat plate-shaped substrate holder 12 (also referred to as a tray), and the substrate holder 12 is mounted on a horizontal transfer mechanism 112 such as a roller conveyor. , It is conveyed linearly from the left inlet side shown in the figure to the right exit side. Here, the bias applying device 2 of the present embodiment is fixed at a predetermined location on the transport path of the substrate holder 12, for example, a location where the sputter electrode 16 is provided.

上述した実施形態の成膜装置１はスパッタ装置であるが、本発明に係るバイアス印加装置２は蒸着装置としての成膜装置１にも適用することができる。図１５は、本発明に係るバイアス印加装置２を用いた成膜装置１の他の実施の形態（蒸着装置１）を示す断面図である。本実施形態の成膜装置（蒸着装置）１では、成膜チャンバ１１の下部に蒸着源１９は配置され、中央に開口を有するシールド１１４を介して成膜チャンバ１１の上部に回転軸１３１を中心に回転駆動するドーム形状の基板ホルダ１２が設けられている。図１５において符号１１３は膜厚補正板である。ここで、基板ホルダ１２の所定箇所に本実施形態のバイアス印加装置２を固定する。 Although the film forming apparatus 1 of the above-described embodiment is a sputtering apparatus, the bias applying apparatus 2 according to the present invention can also be applied to the film forming apparatus 1 as a vapor deposition apparatus. FIG. 15 is a cross-sectional view showing another embodiment of the film forming apparatus 1 (vapor deposition apparatus 1) using the bias applying apparatus 2 according to the present invention. In the film forming apparatus (depositing apparatus) 1 of the present embodiment, the vapor deposition source 19 is arranged in the lower part of the film forming chamber 11, and the rotation shaft 131 is centered on the upper part of the film forming chamber 11 via the shield 114 having an opening in the center. Is provided with a dome-shaped substrate holder 12 that is rotationally driven. In FIG. 15, reference numeral 113 is a film thickness correction plate. Here, the bias applying device 2 of the present embodiment is fixed at a predetermined position on the substrate holder 12.

成膜チャンバ１１の内部空間に配置されるスパッタ電極１６やプラズマ発生装置１７などのコンポーネントの構成は、どのような組み合わせでもよく、固定電極の数も成膜室に複数個配置してもよい。また、プラズマ処理領域Ｒ１にて行われる処理について、プラズマエッチング以外にも、例えばＣＶＤ（Chemical vapor deposition）、ＡＬＤ（atomic layer deposition）、プラズマトリートメント、ドーピングなどの各種処理を挙げることができる。さらに、スパッタ電極１６は本発明に係るバイアス印加装置２に必須の装置ではない。たとえば、ＣＶＤ装置に本発明のバイアス印加装置２を用いる場合、成膜チャンバ１１の内部空間に２つのＩＣＰプラズマ源を設け、一方のＩＣＰプラズマ源では、ヘキサメチルジシロキサン（ＨＭＤＳＯ）などのプリカーサとアルゴンと酸素を供給してＳｉＯ_２を成膜し、他方のＩＣＰプラズマ源では、アルゴンと酸素を導入してプラズマを発生させ、基板ホルダ下に配置した本発明のバイアス印加装置２によって成膜したＳｉＯ_２膜をエッチング処理してもよい。The configuration of components such as the sputtering electrode 16 and the plasma generator 17 arranged in the internal space of the film forming chamber 11 may be any combination, and a plurality of fixed electrodes may be arranged in the film forming chamber. In addition to plasma etching, various treatments such as CVD (Chemical vapor deposition), ALD (atomic layer deposition), plasma treatment, and doping can be mentioned as the treatment performed in the plasma processing region R1. Further, the sputter electrode 16 is not an essential device for the bias applying device 2 according to the present invention. For example, when the bias applying device 2 of the present invention is used for the CVD device, two ICP plasma sources are provided in the internal space of the film forming chamber 11, and one of the ICP plasma sources is a precursor such as hexamethyldisiloxane (HMDSO). Argon and oxygen were supplied to form SiO ₂ , and in the other ICP plasma source, argon and oxygen were introduced to generate plasma, which was formed by the bias applying device 2 of the present invention arranged under the substrate holder. The SiO ₂ film may be etched.

本発明のバイアス印加装置２によりバイアス電力が給電される基板Ｓは、金属などの導体、シリコンなどの半導体、ガラスなどの絶縁体など、どのような基板Ｓに対しても適用することができる。また、成膜チャンバ１１の内部空間における基板Ｓの搬送方式として、円形平板回転方式とカルーセルドラム回転方式を例示したが、成膜チャンバ１１の内部空間を直線的に搬送するインライン搬送方式にも適用することができる。また、上述した実施形態の成膜装置（スパッタ装置）１は、成膜材料を鉛直上側に配置し、被成膜基板Ｓを鉛直下側に配置するデポダウン方式の成膜装置（スパッタ装置）１であるが、本発明のバイアス印加装置２は、デポダウン方式のほか、成膜材料を鉛直下側に配置し、被成膜基板Ｓを鉛直上側に配置するデポアップ方式の成膜装置（スパッタ装置）１その他の成膜装置にも適用することができる。 The substrate S to which the bias power is supplied by the bias applying device 2 of the present invention can be applied to any substrate S such as a conductor such as metal, a semiconductor such as silicon, and an insulator such as glass. Further, although the circular flat plate rotation method and the carousel drum rotation method are exemplified as the transfer method of the substrate S in the internal space of the film forming chamber 11, the in-line transfer method for linearly conveying the internal space of the film forming chamber 11 is also applied. can do. Further, the film forming apparatus (spattering apparatus) 1 of the above-described embodiment is a depot-down type film forming apparatus (sputtering apparatus) 1 in which the film forming material is arranged on the vertically upper side and the film-forming substrate S is arranged on the vertically lower side. However, the bias applying device 2 of the present invention is a depot-up type film forming apparatus (spattering apparatus) in which the film-forming material is arranged on the vertically lower side and the film-forming substrate S is arranged on the vertically upper side in addition to the depot-down method. 1 It can also be applied to other film forming devices.

第１電極２１の固定位置について、プラズマ発生装置１７によるプラズマ処理が有効に実施可能な領域、すなわちプラズマ処理領域Ｒ１のいずれかであれば特に限定されないが、プラズマ処理領域Ｒ１のうちプラズマ発生装置１７の直下及びその近傍に設置すると、同じバイアス電力でもプラズマエッチング効果が最も大きくなる。ただし、本発明はプラズマ処理効果が最も発揮されることに限定されず、第１電極２１をプラズマ処理領域Ｒ１の最外部、すなわちプラズマ発生装置１７から最も離れた位置に固定してもよい。プラズマ処理効果が低くなる領域であることからエッチング分布の調整がし易いという利点がある。 The fixed position of the first electrode 21 is not particularly limited as long as it is in any of the regions where plasma processing by the plasma generator 17 can be effectively performed, that is, the plasma processing region R1, but the plasma generator 17 in the plasma processing region R1. When installed directly below or in the vicinity of, the plasma etching effect is maximized even with the same bias power. However, the present invention is not limited to exerting the plasma processing effect most, and the first electrode 21 may be fixed at the outermost position of the plasma processing region R1, that is, at the position farthest from the plasma generator 17. Since it is a region where the plasma processing effect is low, there is an advantage that the etching distribution can be easily adjusted.

１…成膜装置（スパッタ装置，蒸着装置）
１１…成膜チャンバ
１１１…ゲート
１１２…水平搬送機構
１１３…膜厚補正板
１１４…シールド
１２…基板ホルダ
１２１…絶縁シールド
１２２，１２３…遊星ギヤ
１３…駆動装置
１３１…回転軸
１４…基板保持部
１４１…ベアリング
１５…減圧装置
１６…スパッタ電極
１７…プラズマ発生装置
１８…ガス導入装置
１９…蒸着源
Ｓ…基板
Ｒ１…プラズマ処理領域
Ｒ２…成膜処理領域
ＦＲ…第１領域
ＳＲ…第２領域
２…バイアス印加装置
２１…第１電極
２１Ａ，２１Ｂ…面
２２…第２電極
２２１…上板
２２２…下板
２２３…ジョイント
２２Ａ…表面
２２Ｂ…裏面
２３，２４…絶縁プレート
２５…シールド壁
２６…高真空排気ポンプ
２７，２８…弾性体
３…電源1 ... Film forming equipment (sputtering equipment, vapor deposition equipment)
11 ... Formation chamber 111 ... Gate 112 ... Horizontal transfer mechanism 113 ... Film thickness correction plate 114 ... Shield 12 ... Board holder 121 ... Insulation shield 122, 123 ... Planetary gear 13 ... Drive device 131 ... Rotating shaft 14 ... Board holding part 141 ... Bearing 15 ... Decompression device 16 ... Spatter electrode 17 ... Plasma generator 18 ... Gas introduction device 19 ... Vapor deposition source S ... Substrate R1 ... Plasma processing area R2 ... Formation processing area FR ... First area SR ... Second area 2 ... Bias application device 21 ... 1st electrode 21A, 21B ... Surface 22 ... 2nd electrode 221 ... Upper plate 222 ... Lower plate 223 ... Joint 22A ... Front surface 22B ... Back surface 23, 24 ... Insulation plate 25 ... Shield wall 26 ... High vacuum exhaust Pumps 27, 28 ... Elastic body 3 ... Power supply

Claims

Used in processing equipment that applies predetermined processing to the substrate,
The substrate that moves in the processing room
In a bias applying device that applies a bias to the substrate when it is connected to a power source and passes through a first electrode fixed in the processing chamber.
A bias applying device including an exhaust mechanism for locally exhausting an atmosphere including the first electrode below the plasma discharge pressure.

Used in processing equipment that applies predetermined processing to the substrate,
A first electrode having an electrode area equal to or less than the total area of the substrates is provided in the processing chamber for a plurality of substrates arranged in the processing chamber.
In a bias applying device that applies a bias from a power source to the substrate via the first electrode.
A bias applying device including an exhaust mechanism for locally exhausting an atmosphere including the first electrode below the plasma discharge pressure.

Used in processing equipment that applies predetermined processing to the substrate,
The first electrode connected to the power supply is fixed in or near the plasma processing space in the processing chamber.
In a bias applying device that applies a bias from a power source to the substrate via the first electrode.
A bias applying device including an exhaust mechanism for locally exhausting an atmosphere including the first electrode below the plasma discharge pressure.

The processing device is
It is provided in the processing chamber, has a substrate holding portion for holding a plurality of substrates, and has a drum-shaped substrate holder that rotates about a rotation axis.
The bias applying device according to any one of claims 1 to 3 , wherein the first electrode is fixed at a position facing the back surface side and / or the front surface side of the substrate holding portion.

The processing device is
It is provided in the processing chamber, has a substrate holding portion for holding a plurality of substrates, and has a flat plate-shaped substrate holder that is horizontally conveyed.
The bias applying device according to any one of claims 1 to 3 , wherein the first electrode is fixed at a position facing the back surface side and / or the front surface side of the substrate holding portion.

The processing device is
It is provided in the processing chamber, has a substrate holding portion for holding a plurality of substrates, and has a flat plate-shaped substrate holder that rotates about a rotation axis.
The bias applying device according to any one of claims 1 to 3 , wherein the first electrode is fixed at a position facing the back surface side and / or the front surface side of the substrate holding portion.

The processing device is
It is provided in the processing chamber, has a substrate holding portion for holding a plurality of substrates, and has a dome-shaped substrate holder that rotates about a rotation axis.
The bias applying device according to any one of claims 1 to 3 , wherein the first electrode is fixed at a position facing the back surface side and / or the front surface side of the substrate holding portion.

The substrate holding portion is provided so as to rotate with respect to the substrate holder.
The bias applying device according to claim 6 or 7 , wherein the substrate rotates on a planet including rotation by the substrate holding portion and revolution by the substrate holder.

The bias application device according to any one of claims 4 to 8 , wherein the first electrode has a shape along a movement locus of the substrate.

The bias application device according to any one of claims 1 to 9, wherein the potential of the substrate is a floating potential insulated from the ground potential.

The bias applying device according to any one of claims 1 to 3 , wherein the first electrode and the substrate face each other through a predetermined gap, and a bias is non-contactly applied from the first electrode to the substrate.

The bias applying device according to any one of claims 1 to 3 , further comprising a second electrode that comes into contact with the substrate and approaches and separates from the first electrode.

At least one of the first electrode and the substrate has an elastic body that elastically biases the other.
The bias applying device according to any one of claims 1 to 3 , wherein the first electrode and the substrate are in contact with each other and a bias is contact-applied from the first electrode to the substrate.

One of the first electrode and the second electrode facing each other through a predetermined gap has a front surface and a back surface on the back side thereof.
The bias application device according to claim 12 , wherein the other of the first electrode and the second electrode has a surface facing the surface of the one electrode and another surface facing the back surface of the one electrode.