JPWO2022259368A1 - - Google Patents

Info

Publication number
JPWO2022259368A1
JPWO2022259368A1 JP2021576335A JP2021576335A JPWO2022259368A1 JP WO2022259368 A1 JPWO2022259368 A1 JP WO2022259368A1 JP 2021576335 A JP2021576335 A JP 2021576335A JP 2021576335 A JP2021576335 A JP 2021576335A JP WO2022259368 A1 JPWO2022259368 A1 JP WO2022259368A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021576335A
Other languages
Japanese (ja)
Other versions
JPWO2022259368A5 (en
JP7017832B1 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of JP7017832B1 publication Critical patent/JP7017832B1/en
Publication of JPWO2022259368A1 publication Critical patent/JPWO2022259368A1/ja
Publication of JPWO2022259368A5 publication Critical patent/JPWO2022259368A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2021576335A 2021-06-08 2021-06-08 Bias application device Active JP7017832B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/021763 WO2022259368A1 (en) 2021-06-08 2021-06-08 Bias application device

Publications (3)

Publication Number Publication Date
JP7017832B1 JP7017832B1 (en) 2022-02-09
JPWO2022259368A1 true JPWO2022259368A1 (en) 2022-12-15
JPWO2022259368A5 JPWO2022259368A5 (en) 2023-05-23

Family

ID=80854587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021576335A Active JP7017832B1 (en) 2021-06-08 2021-06-08 Bias application device

Country Status (2)

Country Link
JP (1) JP7017832B1 (en)
WO (1) WO2022259368A1 (en)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2811845B2 (en) * 1989-12-22 1998-10-15 株式会社島津製作所 Mobile film forming equipment
JPH07216547A (en) * 1994-02-01 1995-08-15 Hitachi Ltd Inline-type sputtering device
JP2000239848A (en) * 1999-02-24 2000-09-05 Shimadzu Corp Ecr plasma cvd device
JP2006283132A (en) * 2005-03-31 2006-10-19 Toyota Motor Corp Surface treatment apparatus
CN102066602B (en) * 2008-06-17 2012-10-31 株式会社新柯隆 Bias sputtering apparatus
JP2012136758A (en) * 2010-12-27 2012-07-19 Canon Anelva Corp Device for processing substrate
JP6011417B2 (en) * 2012-06-15 2016-10-19 東京エレクトロン株式会社 Film forming apparatus, substrate processing apparatus, and film forming method
JP6533511B2 (en) * 2015-06-17 2019-06-19 株式会社シンクロン Film forming method and film forming apparatus

Also Published As

Publication number Publication date
JP7017832B1 (en) 2022-02-09
WO2022259368A1 (en) 2022-12-15

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