CN111733391A - Physical vapor deposition device - Google Patents
Physical vapor deposition device Download PDFInfo
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- CN111733391A CN111733391A CN202010480191.1A CN202010480191A CN111733391A CN 111733391 A CN111733391 A CN 111733391A CN 202010480191 A CN202010480191 A CN 202010480191A CN 111733391 A CN111733391 A CN 111733391A
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- vapor deposition
- physical vapor
- central axis
- feed
- reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
Disclosed is a physical vapor deposition apparatus including: a reaction chamber; the substrate supporting component is arranged at the bottom of the reaction chamber and is opposite to the sputtering target; a DC power supply coupled to the sputtering target through a DC feed-in component; a radio frequency power supply coupled to the sputtering target through a radio frequency feed-in component; the direct current feed-in component and the radio frequency feed-in component are distributed coaxially and are coaxial with the central axis. According to the sputtering target material feeding device, the direct-current power supply and the radio-frequency power supply are placed on the central axis of the sputtering target material and are coaxially distributed, the radio-frequency power emitted by the radio-frequency power supply is input from the central axis, and the coupling capacitor generated by the radio-frequency power supply is also positioned on the central axis, so that the radio-frequency feeding is uniform, and finally, the plasma generated in the reaction chamber is uniformly distributed.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing process, in particular to a physical vapor deposition device.
Background
With the continuous development of semiconductor technology, memory manufacturing technology has gradually transitioned from a simple planar structure to a more complex three-dimensional structure, and the technical development of three-dimensional memories is one of the mainstream of international research and development.
In the three-dimensional memory, a metal layer deposition structure for the wiring is generally implemented using Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes.
In conventional physical vapor deposition, a substrate is placed on a substrate support member located within a reaction chamber, which may provide a vacuum environment. In the reaction chamber, a negative bias is applied to the target, the negatively biased target is exposed to an inert gas (e.g., Ar), the inert gas discharges to generate plasma, the generated plasma bombards the target to sputter target atoms, and the sputtered atoms are deposited on the substrate as a deposition film.
In a conventional physical vapor deposition apparatus, a dc power supply supplies a voltage to a target. However, it is difficult for the direct current sputtering to form a uniform thin film retaining the shape of a substrate in which a step (step) such as a hole or a groove occurs. In particular, the wide angle distribution of the deposited sputtered atoms results in poor coverage in the bottom and sidewalls of high aspect ratio features, such as holes and trenches.
In order to improve the coverage rate of the high aspect ratio feature structure, a direct current power supply and a radio frequency power supply are adopted to provide voltage for the target material so as to increase the plasma ionization rate and reduce the deposition rate. However, in the existing physical vapor deposition device with the dual-source structure, the direct-current power supply and the radio-frequency power supply are respectively arranged on two sides of the central axis of the sputtering target, and the radio-frequency power supply can generate coupling capacitance, so that plasma is not uniformly distributed, and a deposited film can generate an asymmetric phenomenon.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a physical vapor deposition apparatus, which solves the problem of non-uniform plasma distribution in a reaction chamber.
According to an aspect of the present invention, there is provided a physical vapor deposition apparatus including: a reaction chamber; the substrate supporting component is arranged at the bottom of the reaction chamber and is opposite to the sputtering target; a DC power supply coupled to the sputtering target through a DC feed-in component; a radio frequency power supply coupled to the sputtering target through a radio frequency feed-in component; the direct current feed-in component and the radio frequency feed-in component are distributed coaxially and are coaxial with the central axis.
Preferably, the physical vapor deposition device further comprises a back plate arranged at the top of the reaction chamber, and the sputtering target is arranged on the back plate.
Preferably, the reaction chamber has a first opening at a bottom thereof, and the substrate support member protrudes into the reaction chamber through the first opening.
Preferably, an insulating part is arranged between the top of the side wall of the reaction chamber and the back plate.
Preferably, the physical vapor deposition apparatus further comprises: the direct current connecting rod is connected between the direct current power supply and the direct current feed-in component; the radio frequency connecting rod is connected between the radio frequency power supply and the radio frequency feed-in component; the direct current connecting rod and the radio frequency connecting rod are coaxially distributed and are coaxial with the central axis.
Preferably, the physical vapor deposition apparatus further comprises: a magnetron assembly positioned above the reaction chamber; the magnetron component comprises a magnet, a driving main shaft and a radial arm, wherein the magnet is supported on the radial arm, part of the driving main shaft is positioned on one side of the central axis, and part of the driving main shaft is coaxial with the central axis.
Preferably, the driving main shaft comprises a first driving main shaft, a synchronous belt and a second driving main shaft; the first driving main shaft is positioned on one side of the central axis, and the second driving main shaft is coaxial with the central axis; the first driving main shaft and the second driving main shaft are connected through a synchronous belt.
Preferably, the physical vapor deposition apparatus further comprises: and the rotary actuator is positioned on one side of the central axis and is connected with the first driving main shaft.
Preferably, the direct current feed-in component and the radio frequency feed-in component are both conductive hollow cylinders.
Preferably, the dc feed-in component and the rf feed-in component are the same conductive hollow cylinder.
Preferably, the dc feed-in component and the rf feed-in component both have a second opening, the second opening is located on one side of the central axis, the first driving spindle passes through the second opening and is connected to the synchronous belt, and the second driving spindle is located below the dc feed-in component and the rf feed-in component.
According to the physical vapor deposition device provided by the invention, the direct-current power supply and the radio-frequency power supply are arranged on the central axis of the sputtering target material and are coaxially distributed, so that the radio-frequency power emitted by the radio-frequency power supply is input from the central axis, and the generated coupling capacitor is also positioned on the central axis, so that the radio-frequency feed is uniform, and the plasma finally generated in the reaction chamber is uniformly distributed.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:
FIG. 1 is a schematic diagram of a physical vapor deposition apparatus according to the prior art;
FIG. 2 is a schematic structural diagram of a physical vapor deposition apparatus according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a physical vapor deposition apparatus according to another embodiment of the invention.
Detailed Description
Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by the same or similar reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale.
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples.
The term "above" as used herein means above the plane of the substrate, and may refer to direct contact between materials or spaced apart.
In the present application, the term "semiconductor structure" refers to the general term for the entire semiconductor structure formed in the various steps of manufacturing a memory device, including all layers or regions that have been formed. In the following description, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of the devices are described in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
The present invention may be embodied in various forms, some examples of which are described below.
Fig. 1 is a schematic diagram of a pvd apparatus 100 having a dual source structure in the prior art, in which the pvd apparatus 100 is used to sputter a material on a sputtering target 200 and deposit the sputtered target material on a wafer or substrate (not shown).
As shown in FIG. 1, the physical vapor deposition apparatus 100 includes a reaction chamber 110, a backing plate 120, a substrate support member 130, a magnetron assembly 140, a direct current power supply (i.e., DC power supply) 160, and a radio frequency power supply (i.e., RF power supply) 163.
The physical vapor deposition apparatus 100 has a cylindrical grounded sidewall 102 and a grounded top wall 103, and a reaction chamber 110 is enclosed by the cylindrical sidewall 102, a top plate 104 and a bottom wall 106. The bottom wall 106 of the reaction chamber 110 also has a first opening 105, and the bottom wall 106 is grounded. The bottom surface of the backing plate 120 forms the top plate 104 of the reaction chamber, and the sputtering target 200 is disposed on this top plate 104. The back plate 120 is disposed on the top of the reaction chamber 110 through an insulating member 121 and closes the top of the reaction chamber 110. The substrate support member 130 is used to position a substrate and extends into the reaction chamber 110 through the opening 105 such that the substrate (not shown) is positioned opposite the sputtering target 200. Optionally, the substrate support member 130 is an electrostatic chuck.
In several specific embodiments, the sputtering target 200 comprises at least one of silicon, doped silicon, zinc oxide, indium tin oxide, transparent conductive oxide, metal.
An insulating member 121 is disposed between the top of the sidewall 102 of the reaction chamber 110 and the backing plate 120 to insulate the sputtering target 200 from ground.
The magnetron assembly 140, located above the top plate 104, includes a magnet 142 and a drive spindle 144, the magnet 142 being supported on a radial arm 146. The rotary actuator 150 rotates the drive shaft 144 causing the magnet 142 to perform an orbital rotary motion on the top plate 104. In the present embodiment, the drive spindle 144 is made of a dielectric material.
The dc power supply 160 is connected to the back plate 120 through a dc link 161 and a dc feed-in part 162. The rf power source 163 is connected to the back plate 120 through the rf connecting rod 164 and the rf feeding member 165.
Since the central axis of the sputtering target 200 is typically occupied by other components, such as magnetron drive components, the dc power supply 160 and the rf power supply 163 must each apply a bias voltage to the sputtering target at an off-axis connection point. Typically, the off-axis connection point of the dc power supply 160 and the off-axis connection point of the rf power supply 163 are located on opposite sides of the central axis and are symmetrically distributed. Therefore, the rf power from the rf power source 163 can only be input from off-axis locations, resulting in non-uniform rf feed and thus non-uniform plasma distribution within the reaction chamber.
In order to solve the problem of uneven distribution of plasma generated in the reaction chamber, in the embodiment of the present invention, the dc power supply 160 and the rf power supply 163 are disposed at the central axis of the sputtering target 200, and the magnetron driving part is disposed at one side of the central axis.
Fig. 2 is a schematic structural diagram of a physical vapor deposition apparatus provided by an embodiment of the invention. As shown in FIG. 2, the PVD apparatus 300 comprises a reaction chamber 310, a backing plate 320, a substrate support 330, a magnetron assembly 340, a DC power supply 360, and a RF power supply 363.
The pvd apparatus 300 has a cylindrical grounded sidewall 302 and a grounded top wall 303, and a reaction chamber 310 is enclosed by the cylindrical sidewall 302, a top plate 304 and a bottom wall 306. The bottom wall 306 of the reaction chamber 310 also has a first opening 305, and the bottom wall 306 is grounded. The bottom surface of the backing plate 320 forms the top plate 304 of the reaction chamber, and the sputtering target 200 is disposed on this top wall 304. The back plate 320 is provided on the top of the reaction chamber 310 through an insulating member 321 and closes the top of the reaction chamber 310. The substrate support 330 is used to position a substrate and extends through the opening 305 into the reaction chamber 310 such that the substrate (not shown) is positioned opposite the sputtering target 200. Optionally, the substrate support member 330 is an electrostatic chuck.
An insulating member 321 is disposed between the top of the sidewall 302 of the reaction chamber 310 and the backing plate 320 to insulate the sputtering target 200 from the ground.
The magnetron assembly 340, located above the top plate 304, includes a magnet 342 and a drive spindle 344, the magnet 342 being supported on a radial arm 346. The driving spindle 344 includes a first driving shaft 344a, a timing belt 344b, and a second driving shaft 344c, wherein the first driving shaft 344a is located at one side of the central axis of the sputtering target 200, the second driving shaft 344c is located at the central axis of the sputtering target 200, and the first driving shaft 344a and the second driving shaft 344c are rotated in synchronization by the timing belt 344 b. The rotation actuator 350 rotates the first drive shaft 344a causing the magnet 342 to perform an orbital rotational motion on the top plate 304. In this embodiment, the drive spindle 344 is made of a dielectric material.
The dc power supply 360 is connected to the back plate 320 through a dc link 361 and a dc feeding member 362. The rf power source 363 is connected to the back plate 320 through the rf connecting rod 364 and the rf feeding member 365. The dc feed-in component 362 and the rf feed-in component 365 are symmetrically disposed on two sides of the central axis of the sputtering target 200. The dc link 361 and the rf link 364 are located on the center axis of the sputtering target 200 and are coaxially distributed. The dc feed element 362 and the rf feed element 365 are both conductive hollow cylinders that are coaxial with the central axis of the sputtering target 200. The dc feeding part 362 and the rf feeding part 365 each have a second opening through which the first driving shaft 344a is connected to the timing belt 344 b. The second driving shaft 344c is located below the dc feed element 362 and the rf feed element 365.
As shown in fig. 2, a gas source 372 provides process-required gases, such as argon, one or more oxygen-containing gases, or a nitrogen-containing gas, which are capable of reacting with the sputtered material to form a film on the substrate. The reacted process gas and reaction byproducts are exhausted from the reaction chamber 310 through a vacuum pump (not shown).
In operation, the supply of process reactant gas from gas source 372 to reaction chamber 310 is controlled by valve 371, such as argon supplied via conduit 374. At this time, the rf power source 363 transmits rf power to the backing plate 320 through the rf feeding member 365, thereby applying rf power to the sputtering target 200, exciting the argon gas in the reaction chamber 310 into plasma, and the DC power source 360 transmits DC power to the sputtering target 200 through the DC feeding member 362, thereby generating a negative bias on the sputtering target 200. Since the dc power supply 360 and the rf power supply 363 are disposed on the central axis of the sputtering target and are coaxially distributed, so that the rf power and the dc voltage are uniformly applied to the sputtering target 200, a high-density plasma can be generated and the plasma is uniformly distributed.
The negative bias attracts the argon ions to bombard the sputtering target 200, sputtering material from the sputtering target 200 down and depositing on the substrate of the substrate support member 330, thereby completing the process.
In a preferred embodiment, the substrate support member 330 is electrically levitated. The physical vapor deposition apparatus 300 further includes an electrode 331 and a voltage source 332. Electrode 331 is connected to substrate support member 330 and voltage source 332 is connected to electrode 331.
In a preferred embodiment, the substrate support member 330 may be grounded.
According to the physical vapor deposition device provided by the embodiment of the invention, the direct-current power supply and the radio-frequency power supply are placed on the central axis of the sputtering target and are coaxially distributed, so that the radio-frequency power emitted by the radio-frequency power supply is input from the central axis, and the generated coupling capacitor is also positioned on the central axis, so that the radio-frequency feed is uniform, and the plasma finally generated in the reaction chamber is uniformly distributed.
Fig. 3 is a schematic structural diagram of a physical vapor deposition apparatus according to another embodiment of the invention. Compared with the previous embodiment, the dc feeding element and the rf feeding element in this embodiment are the same conductive hollow cylinder. The DC power supply and the radio frequency power supply transmit DC power and radio frequency power to the sputtering target through the same conductive hollow cylinder.
The remaining aspects of the pvd apparatus of this embodiment are the same as those of the previous embodiment, and therefore, will not be described in detail.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present invention have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the invention, and these alternatives and modifications are intended to fall within the scope of the invention.
Claims (11)
1. A physical vapor deposition apparatus comprising:
a reaction chamber;
the substrate supporting component is arranged at the bottom of the reaction chamber and is opposite to the sputtering target;
a DC power supply coupled to the sputtering target through a DC feed-in component;
a radio frequency power supply coupled to the sputtering target through a radio frequency feed-in component;
the direct current feed-in component and the radio frequency feed-in component are distributed coaxially and are coaxial with the central axis.
2. The physical vapor deposition apparatus of claim 1, further comprising a backing plate disposed at a top of the reaction chamber, the sputtering target being disposed on the backing plate.
3. The physical vapor deposition apparatus of claim 2, wherein the bottom of the reaction chamber has a first opening through which the substrate support member protrudes into the reaction chamber.
4. The physical vapor deposition apparatus according to claim 2, wherein an insulating member is disposed between a top of a sidewall of the reaction chamber and the backing plate.
5. The physical vapor deposition apparatus of claim 1, further comprising:
the direct current connecting rod is connected between the direct current power supply and the direct current feed-in component;
the radio frequency connecting rod is connected between the radio frequency power supply and the radio frequency feed-in component;
the direct current connecting rod and the radio frequency connecting rod are coaxially distributed and are coaxial with the central axis.
6. The physical vapor deposition apparatus of claim 1, further comprising:
a magnetron assembly positioned above the reaction chamber;
the magnetron component comprises a magnet, a driving main shaft and a radial arm, wherein the magnet is supported on the radial arm, part of the driving main shaft is positioned on one side of the central axis, and part of the driving main shaft is coaxial with the central axis.
7. The physical vapor deposition apparatus of claim 6, wherein the drive spindle comprises a first drive spindle, a timing belt, and a second drive spindle;
the first driving main shaft is positioned on one side of the central axis, and the second driving main shaft is coaxial with the central axis;
the first driving main shaft and the second driving main shaft are connected through a synchronous belt.
8. The physical vapor deposition apparatus of claim 7, further comprising:
and the rotary actuator is positioned on one side of the central axis and is connected with the first driving main shaft.
9. The physical vapor deposition apparatus of claim 1, wherein the dc feed element and the rf feed element are both conductive hollow cylinders.
10. The physical vapor deposition apparatus of claim 1, wherein the dc feed element and the rf feed element are the same conductive hollow cylinder.
11. The physical vapor deposition apparatus according to claim 7, wherein the dc feeding element and the rf feeding element each have a second opening, the second opening is located at one side of the central axis, the first driving spindle passes through the second opening and is connected to the timing belt, and the second driving spindle is located below the dc feeding element and the rf feeding element.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010480191.1A CN111733391A (en) | 2020-05-30 | 2020-05-30 | Physical vapor deposition device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010480191.1A CN111733391A (en) | 2020-05-30 | 2020-05-30 | Physical vapor deposition device |
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| CN111733391A true CN111733391A (en) | 2020-10-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022147654A1 (en) * | 2021-01-05 | 2022-07-14 | Applied Materials, Inc. | Methods and apparatus for processing a substrate using improved shield configurations |
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| CN103081061A (en) * | 2010-07-02 | 2013-05-01 | 应用材料公司 | Deposition apparatus and methods to reduce deposition asymmetry |
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| CN107090574A (en) * | 2017-06-29 | 2017-08-25 | 北京北方华创微电子装备有限公司 | Feed-in structure, top electrode assembly and physical vapor deposition chamber and equipment |
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2020
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| CN102439697A (en) * | 2009-04-03 | 2012-05-02 | 应用材料公司 | High pressure rf-dc sputtering and methods to improve film uniformity and step-coverage of this process |
| CN103081061A (en) * | 2010-07-02 | 2013-05-01 | 应用材料公司 | Deposition apparatus and methods to reduce deposition asymmetry |
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| WO2022147654A1 (en) * | 2021-01-05 | 2022-07-14 | Applied Materials, Inc. | Methods and apparatus for processing a substrate using improved shield configurations |
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