WO2023149323A1

WO2023149323A1 - Plasma treatment device

Info

Publication number: WO2023149323A1
Application number: PCT/JP2023/002364
Authority: WO
Inventors: 敏彦酒井; 大介東
Original assignee: 日新電機株式会社
Priority date: 2022-02-07
Filing date: 2023-01-26
Publication date: 2023-08-10
Also published as: TW202333228A; JP2023114815A

Abstract

The present invention provides a compact plasma treatment device that can apply a plasma treatment to a continuously supplied film. A plasma treatment device (1) comprises a treatment chamber (2) where a prescribed plasma treatment is applied to a substrate (H1) to be treated. The interior of the treatment chamber (2) comprises: a drum (6) that guides the substrate (H1) to be treated supplied continuously to the treatment chamber (2); and an antenna (8) for generating an inductively coupled plasma in the interior of the treatment chamber (2). The antenna (8) is disposed inside the drum (6) and the plasma treatment is applied to the substrate (H1) to be treated on the drum (6).

Description

Plasma processing equipment

The present disclosure relates to a plasma processing apparatus.

In order to perform plasma processing on the film (long flexible substrate to be processed) that is continuously supplied to the processing chamber, the film is transported using rollers and is supported by the peripheral surface of the drum. A plasma processing apparatus is known that performs plasma processing on a film inside.

Japanese patent publication "JP 2008-115412"

However, in the conventional plasma processing apparatus described above, the antenna was provided so as to face the peripheral surface of the drum. For this reason, it has been difficult to configure the conventional plasma processing apparatus to be compact.

The present disclosure has been made in view of the above problems, and an object thereof is to provide a compact plasma processing apparatus capable of performing plasma processing on continuously supplied films.

In order to solve the above problems, a plasma processing apparatus according to one aspect of the present disclosure includes a processing chamber, and plasma processing that performs processing using plasma on films continuously supplied to the processing chamber. An apparatus comprising: a drum for guiding the film continuously supplied to the processing chamber; and an antenna for generating an inductively coupled plasma inside the processing chamber. The antenna is positioned inside the drum, and the plasma treatment is performed on the film on the drum.

According to one aspect of the present disclosure, it is possible to provide a compact plasma processing apparatus capable of performing plasma processing on continuously supplied films.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure explaining the structure of the plasma processing apparatus which concerns on Embodiment 1 of this indication. 2 is a diagram for explaining the relationship between the drum and the antenna shown in FIG. 1; FIG. It is a figure explaining the concrete example of composition of the above-mentioned antenna. 2 is a diagram illustrating a specific configuration example of an internal electrode shown in FIG. 1; FIG. It is a figure explaining the function of the said internal electrode. It is a figure explaining the principal part structure of the modification of the said plasma processing apparatus. It is a figure explaining the structure of the plasma processing apparatus which concerns on Embodiment 2 of this indication. 8 is a diagram illustrating a specific configuration example of the antenna shown in FIG. 7; FIG.

[Embodiment 1]
Embodiment 1 of the present disclosure will be described in detail below with reference to FIGS. 1 to 4. FIG. FIG. 1 is a diagram illustrating the configuration of a plasma processing apparatus 1 according to Embodiment 1 of the present disclosure. FIG. 2 is a diagram for explaining the relationship between the drum 6 and the antenna 8 shown in FIG. FIG. 3 is a diagram for explaining a specific configuration example of the antenna 8. As shown in FIG. FIG. 4 is a diagram for explaining a specific configuration example of the internal electrode 10 shown in FIG.

In the following description, as the predetermined plasma processing, a plasma apparatus for performing film formation processing on the substrate to be processed H1 by a plasma CVD (Chemical Vapor Deposition) method using inductively coupled plasma is exemplified. and explain. However, in the plasma processing apparatus 1 of the present disclosure, as the predetermined plasma processing, for example, sputtering processing for forming a predetermined object on the substrate H1 to be processed using a target, etching processing for removing a predetermined object from the substrate H1 to be processed, or It can also be applied to a plasma processing apparatus that performs an ashing process. In addition, in a plasma processing apparatus that performs a sputtering process, the target is placed, for example, in a plasma generation region, which will be described later.

<Plasma processing apparatus 1>
As shown in FIG. 1, the plasma processing apparatus 1 of Embodiment 1 includes a processing chamber 2 for performing predetermined plasma processing on a substrate H1 to be processed. In the plasma processing apparatus 1, plasma processing is continuously performed on a long substrate H1 to be processed, and the substrate H1 to be processed is sequentially transported to a plasma generation area PA formed inside the processing chamber 2. be done. The plasma processing apparatus 1 is configured such that the plasma processing of the substrate H1 to be processed is performed in the plasma generation area PA. The long substrate to be processed H<b>1 here is an example of a flexible film that is continuously supplied to the processing chamber 2 .

Specifically, the plasma processing apparatus 1 includes a first load-lock chamber 3 for carrying in from the outside a substrate H1 to be processed, which is wound around a support 3A and has not yet undergone plasma processing. The plasma processing apparatus 1 also includes a second load-lock chamber 4 for unloading the plasma-processed substrate H1 wound around the support 4A to the outside. The first load-lock chamber 3 and the second load-lock chamber 4 are airtightly connected to the processing chamber 2 .

A drive mechanism (not shown) is connected to at least one of the support 3A and the support 4A. In the plasma processing apparatus 1, the drive mechanism rotates the corresponding support 3A or support 4A, so that the substrate to be processed H1 is transferred to the first load lock chamber 3, the processing chamber 2, and the second load lock chamber 3. They are transferred to the lock chamber 4 in order.

Further, inside the processing chamber 2, a first internal roller 5 is provided as a delivery unit for delivering the substrate H1 to be processed from the first load lock chamber 3 to the support. Further, inside the processing chamber 2, there are a drum 6 as the support and a second internal roller 7 as a carrying-out section for carrying out the substrate H1 to be processed from the drum 6 to the second load-lock chamber 4. is provided. In the plasma processing apparatus 1, as shown in FIG. 1, the substrate H1 to be processed is sequentially transported from the support 3A over the outer peripheral surfaces of the first internal roller 5 and the drum 6. As shown in FIG. That is, in the plasma processing apparatus 1, the substrates H1 to be processed are continuously supplied to the processing chamber 2 and plasma processing is performed.

Further, in the plasma processing apparatus 1, a part of the outer peripheral surface of the drum 6 is provided so as to be located in the plasma generation area PA separated by the mask 9 arranged inside the processing chamber 2, as shown in FIG. It is Then, in the plasma processing apparatus 1, the portion of the substrate H1 to be processed on the drum 6 carried to the plasma generation area PA by the drum 6 is subjected to a predetermined plasma processing, and a predetermined object (coating) is formed on the surface of the portion. ) is deposited.

Further, in the plasma processing apparatus 1, as shown in FIG. 1, the substrate to be processed H1 on which a predetermined coating is formed is conveyed from the drum 6 to the second load lock chamber 4 via the second internal rollers 7. and is wound around the support 4A.

The substrate H1 to be processed can be, for example, various films used for liquid crystal panel displays, organic EL (Electro Luminescence) panel displays, or synthetic resin substrates (flexible substrates). The plasma processing apparatus 1 forms a barrier (moisture-proof) film or the like as the predetermined film on the substrate to be processed H1 by the predetermined plasma processing. Further, the substrate to be processed H1 wound around the support 4A is appropriately cut into a desired size and used according to the application.

The plasma processing apparatus 1 also includes a control section (not shown) that controls each section of the plasma processing apparatus 1 . The control unit includes, for example, a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), etc., and is a functional block that controls each component according to information processing.

<Processing chamber 2>
The processing chamber 2 is configured using a grounded vacuum vessel, and in a state in which the inside of the vacuum vessel is maintained at a predetermined degree of vacuum, the substrate to be processed is subjected to a predetermined plasma processing under the control of the control unit. It is designed to be applied to H1.

Further, the processing chamber 2 is provided with a processing gas supply unit (not shown) for introducing into the processing chamber 2 a processing gas corresponding to the predetermined plasma processing and containing the gas for film formation of the film. ), the plasma processing is performed in the atmosphere of the processing gas. Process gases are, for example, argon, hydrogen, nitrogen, silane, or oxygen. A gas supply port of the processing gas supply unit is provided on the wall surface of the processing chamber 2 below the mask 9 in correspondence with the plasma generation area PA (not shown). Further, an exhaust port (not shown) for exhausting the processing gas to the outside is appropriately provided.

Further, in the processing chamber 2, the plasma processing may be performed in the plasma generation area PA after performing a predetermined preliminary heating process on the substrate H1 to be processed. For example, the first inner roller 5 is provided with a heating unit HA for preheating the substrate H1 to be processed. The heating part HA is controlled by a heating control part HAC provided outside the processing chamber 2, so that the preheating process for the substrate H1 to be processed is appropriately performed. By appropriately performing the preliminary heating process on the substrate H1 to be processed in this way, it is possible to improve the quality of the film formed on the substrate H1 to be processed by the plasma CVD method. A quality plasma treatment can be applied.

<Drum 6>
The drum 6 is, for example, a cylindrical body, and is rotatably supported in the processing chamber 2 . As shown in FIG. 2, both ends of the drum 6 are rotatably connected to a mounting structure T via bearings B, respectively. The mounting structure T is airtightly attached to the wall surface of the processing chamber 2 via packing P2. Also, the drum 6 is made of a dielectric such as alumina (aluminum oxide), aluminum oxide, quartz, or silicon nitride. When the substrate to be processed H1 is transported by the drive mechanism, the drum 6 is rotated in the direction indicated by R in FIG. is configured to

In addition, since the drum 6 is rotatably supported in the processing chamber 2, the drum 6 guides the substrate H1 to be processed so that the substrate H1 can be transported smoothly. As a result, the plasma processing apparatus 1 of the first embodiment can more appropriately perform the plasma processing on the substrate H1 to be processed.

In addition to the above description, the drum 6 may be rotated by connecting an operation mechanism such as a motor to the drum 6 to drive the substrate H1 to be processed. Alternatively, the drum 6 may be fixed to the wall surface of the processing chamber 2 so that the substrate H1 to be processed slides on the outer peripheral surface of the drum 6 without the drum 6 rotating.

That is, the drum 6 of the present embodiment is a cylinder through which the antenna 8 can be inserted, and guides the substrate H1 to be processed to a plasma generation area (plasma generation area PA) generated inside the processing chamber 2. Any cylindrical body may be used as long as it is capable of

However, as described above, when the drum 6 is rotatably provided in the processing chamber 2, the substrate H1 to be processed can be smoothly transported, and the plasma processing of the substrate H1 to be processed can be performed more efficiently. It is preferable in that it can be appropriately applied. Further, the rotating portion of the drum 6, particularly the portion near the bearing B, may generate particles due to friction with an adjacent fixed portion such as a flange included in the mounting structure T. Therefore, when the drum 6 is provided rotatably, it is preferable that a cover for covering the end of the drum 6 is provided in the vicinity of the end of the drum 6 . By doing so, the amount of particles adhering to the substrate to be processed H1 can be greatly reduced.

<Antenna 8>
Further, inside the drum 6, as shown in FIG. 2, an antenna 8 for generating inductively coupled plasma inside the processing chamber 2 is provided. Specifically, the antenna 8 is a linear antenna, is provided so as to be coaxial with the drum 6, and both end portions thereof are airtightly attached to the mounting structure T via packings P1. That is, the plasma processing apparatus 1 of the present disclosure causes a high-frequency induction electric field to be generated in the vicinity of the antenna 8 by passing a high-frequency current through the antenna 8, thereby generating inductively coupled plasma.

Also, both ends of the antenna 8 are pulled out to the outside of the processing chamber 2 . 3,

impedance adjusters

12 and 14 are provided at one end and the other end of the antenna 8, respectively.

The impedance adjuster 12 has a matching circuit, and one end of the antenna 8 is connected to the power supply 13 via the impedance adjuster 12 . Also, the impedance adjustment unit 14 has a variable capacitor. The other end of the antenna 8 is grounded via the impedance adjuster 14 .

The power supply 13 supplies high-frequency power of, for example, 13.56 MHz to one end of the antenna 8 via the impedance adjustment section 12 . The controller changes the capacitance of the variable capacitor of the impedance adjuster 14 so that the high-frequency power is efficiently supplied to the antenna 8 inside the processing chamber 2 . Since the antenna 8 is provided so as to be coaxial with the drum 6 , plasma can be generated uniformly in the circumferential direction toward the outer peripheral surface of the drum 6 . As a result, in the plasma processing apparatus 1 of this embodiment, the uniformity of film formation on the substrate H1 to be processed can be improved.

In addition, since the antenna 8 is coaxially provided inside the drum 6 as described above, the distribution of the film formation rate, etc., may not be obtained in the trial production stage prior to mass production due to variations in the members of the plasma processing apparatus 1 . is identified, the position of the antenna 8 can be adjusted in a direction that compensates for that distribution. For example, in the longitudinal direction of the antenna 8, when the film formation rate near one end of the antenna 8 is low, the end can be adjusted to approach the direction of the plasma generation area PA (lower side of the paper surface of FIG. 1). and the above distribution can be eliminated.

In addition to the above description, the antenna 8 may be configured to be rotatable with respect to the processing chamber 2. However, the case where the antenna 8 is fixed is preferable in that the configuration of the plasma processing apparatus 1 can be simplified.

<Internal electrode 10>
Inside the processing chamber 2, an internal electrode 10 is provided outside the drum 6 and within the plasma generation area PA. Specifically, the internal electrode 10 has a substantially arcuate cross-sectional shape along the outer peripheral surface of the drum 6 . The internal electrode 10 is fixed to the mask 9 via the insulating spacer 11, and is arranged in the plasma generation area PA so as to face the outer peripheral surface of the drum 6 and the substrate H1 to be processed on the outer peripheral surface.

The internal electrode 10 is configured using, for example, a carbon plate or a metal plate. The internal electrode 10 is a control electrode that controls the charged particles contained in the plasma inside the processing chamber 2 . That is, the internal electrode 10 is connected to an electrode potential control section 10E (FIG. 5) that includes a power supply connected to the internal electrode 10 and controls the potential of the internal electrode 10 by controlling the power supply. The electrode potential controller 10E controls the potential of the internal electrode 10 to a predetermined potential by variably adjusting the applied voltage applied from the electrode power source to the internal electrode 10 according to instructions from the control unit.

When the internal electrode 10 is formed using a carbon plate, the carbon plate has a high strength even though the density is lower than that of a metal plate, and the internal electrode 10 is less likely to bend or the like. Therefore, even when the size of the internal electrode 10 is increased, in-plane non-uniformity of plasma due to deflection or the like can be prevented from occurring.

For the metal plate, it is preferable to use a metal material with low density and high electrical conductivity. Specifically, it is preferable to use aluminum or an aluminum alloy. In addition, when the internal electrode 10 is configured using a metal plate of such a metal material, the internal electrode 10 can be configured to be more excellent in mechanical impact than the internal electrode 10 using a carbon plate. The impact resistance of the plasma processing apparatus 1 can be enhanced. As a result, for example, when vibration or the like caused by opening and closing a valve (not shown) is transmitted to the plasma processing apparatus 1, it is preferable to form the internal electrode 10 using the metal plate described above.

As shown in FIG. 4, the internal electrode 10 is composed of, for example, a punching metal-shaped grid electrode having a plurality of circular openings 10a. The internal electrode 10 selectively imparts kinetic energy to the charged particles according to the polarity of the charged particles and reduces the amount of charged particles reaching the substrate H1 to be processed (details will be described later).

In addition to the above description, for example, a mesh-like grid electrode may be used as the internal electrode 10 .

In addition to the above description, it is also possible to use flat internal electrodes 10 without openings 10a. In this case, the plasma generation area PA tends to be limited between the drum 6 and the internal electrode 10 . As a result, high-density plasma can be generated, the film formation rate and the etching rate can be improved, and the tact time can be shortened. However, it is preferable to adjust the ejection position and ejection angle of the processing gas so that the processing gas is efficiently supplied to the plasma generation area PA.

On the other hand, when the opening 10a is provided, the processing gas introduced into the processing chamber 2 through the opening 10a can be smoothly supplied to the area above the drum 6 regardless of the ejection position or ejection angle of the processing gas. . Therefore, when the opening 10a is provided, it is possible to suppress the reduction in the processing efficiency of the plasma processing due to the arrangement of the internal electrode 10 inside the processing chamber 2 .

<Operation example>
Also using FIG. 5, the operation of the plasma processing apparatus 1 of the first embodiment will be specifically described. FIG. 5 is a diagram for explaining the function of the internal electrode 10. As shown in FIG. In the following description, operations of the internal electrodes 10 are mainly described. Also, in FIG. 5, illustration of the substrate to be processed H1, the drum 6, the antenna 8, and the like is omitted.

As shown in FIG. 5, when the antenna 8 (FIG. 1) operates and plasma is generated inside the processing chamber 2, the charged particles k contained in the plasma reach the internal electrode 10 unlike the neutral particles n. moves according to the applied voltage. That is, inside the processing chamber 2, as shown in FIG. 5, the processing chamber 2 is grounded. Exercise accordingly. That is, inside the processing chamber 2, the charged particles k are selectively imparted with kinetic energy from the internal electrode 10 according to their polarities, or the amount of the particles reaching the substrate H1 to be processed is reduced.

Specifically, as indicated by an arrow E in FIG. 5, the electrode potential control unit 10E controls the internal electrode 10 so that the potential of the internal electrode 10 is lower than the plasma potential, for example. voltage is applied. In this case, the positive ions p have increased kinetic energy in the direction toward the substrate to be processed H1, as indicated by the arrow in FIG. As a result, the reaction of the positive ions p on the surface of the substrate H1 to be processed can be promoted, and a high-quality film can be formed on the surface.

On the other hand, electrons or negative ions e have increased kinetic energy in the direction opposite to the substrate H1 to be processed, as indicated by the arrow in FIG. As a result, the amount of electrons or negative ions e reaching the substrate to be processed H1 can be reduced. As a result, when the electrons or negative ions e degrade the film quality of the film formed on the surface of the substrate H1 to be processed by the plasma processing, the deterioration of the film quality can be suppressed.

The plasma processing apparatus 1 of Embodiment 1 configured as described above includes a processing chamber 2 for performing a predetermined plasma processing on the substrate (film) H1 to be processed. The interior of the processing chamber 2 includes a drum 6 for guiding substrates H1 to be processed which are continuously supplied to the processing chamber 2, and an antenna 8 for generating inductively coupled plasma inside the processing chamber 2. ing. The antenna 8 is arranged inside the drum 6, and the substrate H1 to be processed on the drum 6 is subjected to plasma processing. As a result, in the first embodiment, even when plasma processing is continuously performed on long substrates H1 to be processed which are continuously supplied to the processing chamber 2, a compact plasma processing apparatus capable of performing high-quality plasma processing can be performed. It is possible to configure a plasma processing apparatus 1 with a

That is, since the plasma processing apparatus 1 of Embodiment 1 uses the cylindrical drum 6 for guiding the elongated substrate H1 to be processed, the elongated substrate H1 to be processed can be plasma-processed. can. Further, in the plasma processing apparatus 1 of Embodiment 1, the antenna 8 is provided inside the drum 6 so as to be coaxial with the drum 6 . As a result, the plasma processing apparatus 1 of Embodiment 1 can efficiently generate plasma in the vicinity of the outer circumference of the drum 6 inside the processing chamber 2 . Furthermore, in the plasma processing apparatus 1 of Embodiment 1, unlike the conventional example, it is not necessary to secure an installation space exclusively for the antenna 8 inside the processing chamber 2 . Therefore, unlike the conventional example, the plasma processing apparatus 1 of Embodiment 1 can prevent the structure from becoming large and complicated, and can constitute a compact plasma processing apparatus 1 .

That is, in the conventional example described above, the antenna was provided so as to face the peripheral surface of the drum. For this reason, in the conventional example, it is difficult to achieve a compact configuration that prevents the configuration from becoming large and complicated. Further, in the conventional example, it was necessary to position the antenna with high accuracy with respect to the peripheral surface of the drum. Therefore, in the conventional example, it has been difficult to easily ensure plasma uniformity in the circumferential direction of the drum, and it has been difficult to improve the uniformity of film formation on the film. In particular, in the conventional example, when forming a film over a wide area along the circumferential direction on the outer circumference of the drum, in the conventional example, it was necessary to arrange the antennas in the circumferential direction. For this reason. In the conventional example, the structure is complicated, and it is necessary to provide various antenna mounting structures along the wall of the processing chamber.

On the other hand, in the plasma processing apparatus 1 of Embodiment 1, high-quality plasma processing can be performed even on the long substrate H1 to be processed without providing an installation space exclusively for the antenna 8 inside the processing chamber 2. can. Therefore, in Embodiment 1, it is possible to configure a compact plasma processing apparatus 1 capable of forming a film over a wide area along the circumferential direction on the outer circumference of the drum 6 .

Further, in the plasma processing apparatus 1 of Embodiment 1, by adjusting the position of the antenna 8 inside the drum 6, it is possible to control the plasma generated from the outer peripheral surface of the drum 6 toward the plasma generation area PA. becomes. Thus, in the plasma processing apparatus 1 of Embodiment 1, the plasma from the antenna 8 can be uniformly generated toward the outer peripheral surface of the drum 6 . As a result, in the plasma processing apparatus 1 of Embodiment 1, the uniformity of film formation on the substrate H1 to be processed can be improved. Therefore, in the plasma processing apparatus 1 of Embodiment 1, high-quality plasma processing can be performed even when the long substrate H1 to be processed is continuously subjected to plasma processing.

Further, in the plasma processing apparatus 1 of Embodiment 1, since the internal electrode 10 is provided inside the processing chamber 2, the movement and arrival amount of the charged particles of the plasma to the substrate H1 to be processed on the drum 6 can be directly measured. can be controlled to Furthermore, in the plasma processing apparatus 1 of Embodiment 1, a large potential gradient can be formed between the internal electrode 10 and the substrate H1 to be processed during plasma processing.

As a result, in the plasma processing apparatus 1 of the first embodiment, as illustrated in FIG. 5, kinetic energy can be selectively applied to the charged particles k contained in the plasma according to the polarity of the charged particles k. . Therefore, in the plasma processing apparatus 1 of Embodiment 1, it is possible to increase or decrease the amount of charged particles k reaching the substrate H1 to be processed. Therefore, in the plasma processing apparatus 1 of Embodiment 1, the movement of the charged particles k can be appropriately controlled, and highly accurate plasma processing can be easily performed on the substrate H1 to be processed.

Further, in the plasma processing apparatus 1 of Embodiment 1, the internal electrode 10 and the antenna 8 are arranged so as to sandwich the substrate H1 to be processed. Therefore, the electric field applied between the internal electrode 10 and the substrate H1 to be processed can act on the plasma for plasma-processing the substrate H1 to be processed on the drum 6 . Therefore, in the plasma processing apparatus 1 of Embodiment 1, it is possible to efficiently control the movement and arrival amount of the plasma charged particles to the substrate H1 to be processed. As a result, in the plasma processing apparatus 1 of Embodiment 1, highly accurate plasma processing can be more easily performed on the substrate H1 to be processed.

Further, in the plasma processing apparatus 1 of Embodiment 1, a chemical vapor deposition method using plasma is performed on the substrate H1 to be processed as plasma processing. Accordingly, in the plasma processing apparatus 1 of the first embodiment, high-quality film formation can be performed on the substrate H1 to be processed.

[Modification]
A modification of the present disclosure will be specifically described with reference to FIG. FIG. 6 is a diagram for explaining the main configuration of a modified example of the plasma processing apparatus 1. As shown in FIG. For convenience of explanation, members having the same functions as the members explained in the first embodiment are denoted by the same reference numerals, and the explanation thereof will not be repeated.

The main difference between this modification and Embodiment 1 is that one end 8a and the other end 8b in the longitudinal direction of the antenna 8 are provided in the processing chamber 2 so as to be movable in the radial direction of the drum 6, and the one end 8a and a position control section 80 for controlling each position of the other end portion 8b.

In the plasma processing apparatus 1 of this modified example, as shown in FIG. 6, in the processing chamber 2, long holes 2a opening in the radial direction of the drum 6 (FIG. 1) are formed in the wall surface. The antenna 8 is attached to the wall surface of the processing chamber 2 so that one end 8a and the other end 8b are inserted through the long hole 2a. It is movable in the radial direction. That is, the linear antenna 8 is arranged substantially parallel to the axis of the drum 6 and is supported by the processing chamber 2 so that the angular deviation from the direction parallel to the axis of the drum 6 can be adjusted. there is

Further, in the plasma processing apparatus 1 of this modified example, the position control section 80 is connected to the one end portion 8a of the antenna 8, for example. The position control unit 80 has a movable mechanism (not shown) such as a motor for moving the one end 8a of the antenna 8 in the radial direction. The position control section 80 controls the positions of the one end portion 8a and the other end portion 8b by operating the movable mechanism according to instructions from the control section. This allows the antenna 8 to be arranged in a longitudinally inclined state with respect to the drum 6 . That is, in this modification, the antenna 8 is arranged coaxially with the drum 6 inside the drum 6, and the central axis of the antenna 8 is inclined with respect to the central axis of the drum 6 in the longitudinal direction. be able to.

As described above, in the plasma processing apparatus 1 of this modification, the position control section 80 can adjust the inclination of the antenna 8 in the longitudinal direction. Therefore, in the plasma processing apparatus 1 of this modified example, the distance between the antenna 8 and the substrate to be processed H1 on the outer peripheral surface of the drum 6 in the longitudinal direction is set to the one end portion 8a side of the antenna 8 and the other end portion 8b. can be set to different values on each side. Therefore, in the plasma processing apparatus 1 of this modified example, when the distribution of film formation on the substrate H1 to be processed is uneven, the adjustment of the mounting of the antenna 8 described above adjusts the unevenness and facilitates uniformity. can be secured to As a result, in the plasma processing apparatus 1 of this modified example, highly accurate plasma processing can be reliably performed on the substrate H1 to be processed.

[Embodiment 2]
Embodiment 2 of the present disclosure will be specifically described with reference to FIGS. 7 and 8. FIG. FIG. 7 is a diagram illustrating the configuration of the plasma processing apparatus 1 according to Embodiment 2 of the present disclosure. FIG. 8 is a diagram illustrating a specific configuration example of the

antennas

18a, 18b, and 18c shown in FIG. For convenience of explanation, members having the same functions as the members explained in the first embodiment are denoted by the same reference numerals, and the explanation thereof will not be repeated.

The main difference between the second embodiment and the first embodiment is that a plurality of

antennas

18a, 18b, and 18c are arranged inside the drum 6 along the inner peripheral surface of the drum 6. FIG.

In the plasma processing apparatus 1 of Embodiment 2, a plurality of, for example, three

antennas

18a, 18b, and 18c are provided inside the drum 6, as shown in FIG. Further, these

antennas

18a, 18b, 18c are arranged side by side along the inner peripheral surface of the drum 6. As shown in FIG. Further, these

antennas

18a, 18b, and 18c are arranged, for example, so that the separation distance from the inner peripheral surface is the same. Further, the antenna 18b is positioned below the

antennas

18a and 18c in the vertical direction of FIG. installed.

As shown in FIG. 8, the impedance adjuster 12 and the power supply 13 are sequentially connected to one end of the antenna 18a. An impedance adjuster 14a is connected to the other end of the antenna 18a and the other end of the antenna 18b. An impedance adjuster 14b is connected to one end of the antenna 18b and one end of the antenna 18c. An impedance adjuster 14c is connected to the other end of the antenna 18c.

The

impedance adjusters

14a, 14b, and 14c each have a variable capacitor. The

antennas

18a, 18b, 18c are connected in series via the

impedance adjusters

14a, 14b, and grounded via the impedance adjuster 14c. In the plasma processing apparatus 1 of Embodiment 2, the controller changes the capacity of each variable capacitor of the

impedance adjusters

14a, 14b, and 14c, thereby efficiently supplying high-frequency power to the

antennas

18a, 18b, and 18c. control to be supplied.

With the above configuration, the plasma processing apparatus 1 of the second embodiment has the same effects as those of the first embodiment. Further, in the plasma processing apparatus 1 of Embodiment 2, the

antennas

18 a , 18 b , 18 c are arranged uniformly along the inner peripheral surface of the drum 6 inside the drum 6 . Thus, in the plasma processing apparatus 1 of Embodiment 2, the

antennas

18a, 18b, and 18c can generate uniform plasma on the outer peripheral surface of the drum 6 in the plasma generation area PA. Therefore, in the plasma processing apparatus 1 of Embodiment 2, plasma can be applied uniformly to the substrate H1 to be processed on the outer peripheral surface of the drum 6 during plasma processing.

As a result, in the plasma processing apparatus 1 of the second embodiment, compared with the first embodiment, the uniformity of the plasma to the substrate H1 to be processed can be ensured more reliably, and the plasma processing apparatus 1 to the substrate H1 to be processed can be processed with high accuracy. Plasma processing can be performed more reliably.

〔summary〕
In order to solve the above problems, a plasma processing apparatus according to one aspect of the present disclosure includes a processing chamber, and plasma processing that performs processing using plasma on films continuously supplied to the processing chamber. An apparatus comprising: a drum for guiding the film continuously supplied to the processing chamber; and an antenna for generating an inductively coupled plasma inside the processing chamber. The antenna is positioned inside the drum, and the plasma treatment is performed on the film on the drum.

According to the above configuration, the plasma processing apparatus includes a drum inside the processing chamber that guides the film that is continuously supplied to the processing chamber, so that the film can be plasma-processed. Moreover, since the antenna is arranged inside the drum, plasma can be efficiently generated for performing plasma processing on the film on the drum. In addition, it is possible to provide a compact plasma processing apparatus capable of performing high-quality plasma processing without increasing the size and complexity of the processing chamber.

In the plasma processing apparatus according to one aspect described above, an internal electrode to which a predetermined potential is applied may be further provided inside the processing chamber.

According to the above configuration, since the plasma processing apparatus includes an internal electrode to which a predetermined potential is applied inside the processing chamber, the movement and arrival amount of the charged particles of the plasma with respect to the film on the drum can be directly measured. can be controlled. As a result, highly accurate plasma processing can be easily performed on the film.

In the plasma processing apparatus according to one aspect, the internal electrode may be arranged outside the drum.

According to the above configuration, the internal electrodes are arranged so as to sandwich the film between them and the antenna. Therefore, the electric field applied between the internal electrode and the film can act on the plasma for plasma processing the film on the drum. Therefore, it is possible to control the motion of the charged particles of the plasma with respect to the film and the amount of arrival. As a result, highly accurate plasma processing can be easily performed on the film.

In the plasma processing apparatus according to one aspect described above, the internal electrode may be made of a carbon plate or a metal plate having a plurality of openings.

According to the above configuration, the processing gas introduced into the processing chamber through the opening can be smoothly moved to the area above the drum, and the processing efficiency of the plasma processing is lowered by arranging the internal electrode inside the processing chamber. can be suppressed.

In the plasma processing apparatus according to the above aspect, the antenna is a linear antenna that is arranged substantially parallel to the axis of the drum and whose angular deviation from the direction parallel to the axis of the drum is adjusted. It may be supported in said processing chamber as is possible.

According to the above configuration, the linear antenna can be easily arranged inside the drum. Also, since the antenna can be adjusted in angular deviation from the direction parallel to the axis of the drum, it is possible to more easily ensure the uniformity of the plasma with respect to the film. As a result, highly accurate plasma processing can be reliably performed on the film.

In the plasma processing apparatus according to the above aspect, the plurality of antennas may be arranged side by side inside the drum along the inner peripheral surface of the drum.

According to the above configuration, since each of the plurality of antennas generates plasma toward the outer peripheral surface of the drum, the plasma can be applied uniformly to the film being plasma-processed on the outer peripheral surface of the drum. As a result, highly accurate plasma processing of the film can be performed more reliably.

In the plasma processing apparatus according to the above aspect, a heating unit may be provided for preheating the film, which is continuously supplied to the processing chamber, upstream of the drum.

According to the above configuration, high-quality plasma processing can be applied to the film.

In the plasma processing apparatus according to one aspect described above, the drum may be rotatably supported in the processing chamber.

According to the above configuration, the drum guides and transports the film, so the film can be transported smoothly. As a result, the film can be more appropriately plasma-treated.

In the plasma processing apparatus according to the above aspect, the plasma processing may be film formation processing by a chemical vapor deposition method using the plasma.

According to the above configuration, a high-quality film can be formed on the object to be processed.

The present disclosure is not limited to each embodiment described above, various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in the technical scope of the present disclosure.

1 plasma processing apparatus 2 processing chamber 5 first internal roller (delivering unit)
6

drum

8, 18a, 18b, 18c antenna 8a one end 8b other end 10 internal electrode 10a opening 80 position control unit H1 substrate to be processed (film)
PA Plasma generation area HA Heating unit HAC Heating control unit k Charged particles p Positive ions e Electrons or negative ions

Claims

A plasma processing apparatus comprising a processing chamber and performing plasma processing on a film continuously supplied to the processing chamber,
Inside the processing chamber,
a drum for guiding the film continuously supplied to the processing chamber;
an antenna for generating an inductively coupled plasma inside the processing chamber;
The antenna is positioned inside the drum,
A plasma processing apparatus, wherein the plasma processing is performed on the film on the drum.
Inside the processing chamber,
2. The plasma processing apparatus according to claim 1, further comprising internal electrodes to which a predetermined potential is applied.
The plasma processing apparatus according to claim 2, wherein said internal electrode is arranged outside said drum.
The plasma processing apparatus according to claim 2 or 3, wherein the internal electrode is made of a carbon plate or a metal plate having a plurality of openings.
The antenna is a linear antenna,
5. Any of claims 1 to 4, arranged substantially parallel to the axis of the drum and supported in the processing chamber such that the angular deviation from parallel to the axis of the drum is adjustable. 1. The plasma processing apparatus according to claim 1.
The plasma processing apparatus according to any one of claims 1 to 5, wherein a plurality of said antennas are arranged inside said drum along the inner peripheral surface of said drum.
7. The plasma processing according to any one of claims 1 to 6, further comprising a heating unit for preheating the film upstream of the drum, which is continuously supplied to the processing chamber. Device.
The plasma processing apparatus according to any one of claims 1 to 7, wherein said drum is rotatably supported in said processing chamber.
The plasma processing apparatus according to any one of claims 1 to 8, wherein said plasma processing is film formation processing by a chemical vapor deposition method using said plasma.