JP2015086417A - Inductively-coupled plasma cvd apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an inductively-coupled plasma CVD apparatus capable of forming a thin film at excellent productivity.SOLUTION: An inductively-coupled plasma CVD apparatus comprises: a vacuum chamber having a dielectric window which allows high frequency to pass through the window; a sheet conveyance part which feeds sheet from a feeding roller, and takes up the sheet by a take-up roller after a surface of the sheet is positioned in a film deposition zone inside the vacuum chamber; a raw material gas supply part which supplies raw material gas into the film deposition zone; a high frequency applying part which applies high frequency to the raw material gas supplied to the film deposition zone via the dielectric window to generate inductively-coupled plasma of the raw material gas, and forms a thin film on a surface of the sheet positioned in the film deposition zone; and a contamination preventing member which is positioned in the vicinity of a surface of the dielectric window, which faces the film deposition zone, and suppresses contact between the inductively-coupled plasma generated in the film deposition zone and the dielectric window.

Description

  The present invention relates to a technique for forming a thin film on the surface of a sheet by a so-called roll-to-roll method using an inductively coupled plasma chemical vapor deposition (CVD) method.

  As an apparatus for forming a thin film using an inductively coupled plasma chemical vapor deposition method, for example, an apparatus described in Patent Document 1 is known. In this apparatus, a dielectric window made of quartz material is formed on the upper plate of the vacuum reaction chamber. In addition, a high frequency coil (RF antenna) is disposed on the top surface of the dielectric window, and a high frequency is induced through the dielectric window inside the vacuum reaction chamber into which the reaction gas has been introduced. As a result, inductively coupled plasma is generated in the vacuum reaction chamber to form a thin film on the glass substrate.

Japanese Patent Laid-Open No. 10-27762 (FIG. 1)

  The apparatus described in Patent Document 1 forms a thin film by a so-called single-wafer method, and is suitable for high-mix low-volume production, but has a certain limit in mass production. Therefore, conventionally, a roll-to-roll inductively coupled plasma CVD apparatus has been studied. One of the biggest problems is the frequency of cleaning the dielectric window. That is, the dielectric window is exposed to inductively coupled plasma while the thin film is formed. For this reason, the amount of film material adhering to the dielectric window increases during continuous operation of the apparatus, and it becomes difficult to stably form a thin film on the surface of the sheet by changing the plasma state. In order to solve this, it is necessary to frequently clean the dielectric window, and it is necessary to interrupt the thin film forming process each time. As a result, the cleaning work is one of the causes of reducing the productivity of the apparatus.

  The present invention has been made in view of the above problems, and an object thereof is to provide an inductively coupled plasma CVD apparatus capable of forming a thin film with excellent productivity.

  A first aspect of the inductively coupled plasma CVD apparatus according to the present invention includes a vacuum chamber having a dielectric window that transmits high frequency, a sheet fed from a feeding roller, and the surface of the sheet positioned in a film formation zone inside the vacuum chamber. A sheet transport unit that winds the sheet with a winding roller, a source gas supply unit that supplies a source gas to the deposition zone, and a source gas supplied to the deposition zone via a dielectric window A high-frequency application unit that generates a thin film on the surface of the sheet positioned in the film formation zone by applying a high frequency to generate inductively coupled plasma of the source gas, and a position near the surface facing the film formation zone of the dielectric window And a contamination prevention member that suppresses contact between the inductively coupled plasma generated in the film formation zone and the dielectric window.

  A second aspect of the inductively coupled plasma CVD apparatus according to the present invention includes a vacuum chamber having a plurality of processing spaces and a plurality of dielectric windows for transmitting high frequencies to the processing spaces for each processing space, and a feeding roller. A sheet conveyance unit that unwinds the sheet and places the surface of the sheet in a film formation zone inside each processing space and then winds the sheet with a winding roller, and film formation in the processing space provided for each processing space. A plurality of source gas supply units for supplying source gas to the zone, and a source by supplying a high frequency to the source gas provided for each processing space and supplied to the deposition zone of the processing space through a dielectric window A plurality of high-frequency applying sections that generate gas inductively coupled plasma and form a thin film on the surface of the sheet located in the film formation zone, and film formation of the dielectric window provided for each processing space Is characterized in that it comprises a plurality of pollution member suppresses the contact between the inductively coupled plasma and the dielectric window generated by the deposition zones located in the vicinity of over emission surface facing.

  In the invention configured as described above, the high frequency generated in the high frequency application section is applied to the film formation zone through the dielectric window, and inductively coupled plasma of the source gas is generated in the film formation zone. Then, a thin film is formed on the surface of the sheet located in the film formation zone. Therefore, when the inductively coupled plasma comes into contact with the dielectric window, a film is also formed on the dielectric window and is contaminated, which causes a decrease in productivity. On the other hand, in the present invention, the contamination preventing member is positioned in the vicinity of the surface of the dielectric window facing the film formation zone to suppress contact between the inductively coupled plasma and the dielectric window. As a result, film formation on the dielectric window, that is, contamination of the dielectric window is greatly suppressed.

  Here, a film that transmits high frequency may be used as the contamination preventing member.

  Also, a film transport unit is provided to replace the film, that is, a film located in the vicinity of the dielectric window and in contact with the inductively coupled plasma of the source gas is recovered by the recovery roller and is in contact with the inductively coupled plasma of the source gas. You may comprise so that the film exchange process which supplies a previous film from a supply roller may be performed.

  Moreover, while configuring so that a film conveyance part may perform a film exchange process intermittently, you may change the time interval of a film exchange process according to the film-forming conditions of the thin film on a sheet | seat.

  Furthermore, in the film transport unit, a plurality of films having different width sizes in the width direction perpendicular to the direction in which the film is supplied may be transported.

  As described above, according to the present invention, the anti-contamination member prevents the inductively coupled plasma generated in the deposition zone from coming into contact with the dielectric window, so that the film formation is formed on the dielectric window. Can be suppressed. As a result, the frequency of cleaning the dielectric window can be reduced and the productivity of the apparatus can be improved.

1 is a diagram showing a first embodiment of an inductively coupled plasma CVD apparatus according to the present invention. It is a block diagram which shows the electric constitution of the apparatus shown in FIG. It is a figure which shows 2nd Embodiment of the inductively coupled plasma CVD apparatus concerning this invention. It is a figure which shows 3rd Embodiment of the inductively coupled plasma CVD apparatus concerning this invention. It is a figure which shows 4th Embodiment of the inductively coupled plasma CVD apparatus concerning this invention.

  FIG. 1 is a view showing a first embodiment of an inductively coupled plasma CVD apparatus according to the present invention. FIG. 1 (a) is an XZ sectional view of the apparatus, and FIG. 1 (b) is a YZ sectional view of the apparatus. It is. FIG. 2 is a block diagram showing an electrical configuration of the apparatus shown in FIG. This inductively coupled plasma CVD apparatus 1 is an apparatus for forming a thin film on the surface of a cycloolefin polymer sheet (hereinafter referred to as “COP sheet”) which is an example of a thin film formation target. The anti-contamination film is used to improve productivity. In this embodiment, the conveyance direction of the COP sheet and the conveyance direction of the contamination prevention film are orthogonal to each other, the conveyance direction of the COP sheet is “X direction”, and the conveyance direction of the contamination prevention film is “Y direction”. Furthermore, the direction orthogonal to these directions X and Y is defined as the “Z direction”.

  The inductively coupled plasma CVD apparatus 1 includes a vacuum chamber 2 whose inside is reduced to a predetermined pressure by a vacuum pump P (FIG. 2), and COP is performed in a film formation zone ZN set near the inner bottom surface of the vacuum chamber 2. A thin film is formed on the surface of the sheet S. On the lower surface of the vacuum chamber 2, an opening is provided so as to face the film formation zone ZN from the (−Z) direction. The dielectric window 22 includes a window frame member 23 and a window presser so as to close the opening. The member 24 is attached to the lower surface of the vacuum chamber 2.

  The dielectric window 22 has a function of transmitting the high frequency generated by the high frequency application unit 3 disposed below the vacuum chamber 2 to the film formation zone ZN while ensuring the airtightness of the vacuum chamber 2. In this embodiment, the lower peripheral edge of the dielectric window 22 is supported from the lower side by a metal window frame member 23 fixed to the lower side of the vacuum chamber 2, that is, the (−Z) direction side, and the dielectric window. The upper peripheral edge portion 22 is pressed from the upper side, that is, the (+ Z) direction side by the four metal window pressing members 24. Thus, the dielectric window 22 is firmly fixed to the lower surface of the vacuum chamber 2 and the vacuum chamber 2 is sealed to prevent leakage of gas components from the vacuum chamber 2. In the present embodiment, a ground potential is applied to the window frame member 23 and the window pressing member 24.

  The high-frequency application unit 3 includes a high-frequency generation source 31 that generates high-frequency power (typically 13.56 MHz), a matching unit 32, and a coil 33 disposed immediately below the dielectric window 22. Here, as the shape of the coil 33, it is desirable that the coil 33 can form a uniform magnetic field in the film formation zone ZN of the vacuum chamber 2. For example, Japanese Patent Application Laid-Open No. 2005-228738 previously disclosed by the applicant of the present application. The thing of the structure described in gazette can be used. With this configuration, the apparatus 1 can generate a high-frequency magnetic field having a uniform intensity in the direction parallel to the coil surface in the vicinity of the coil 23 and apply it to the deposition zone ZN via the dielectric window 22. It is possible.

  In addition, in the inductively coupled plasma CVD apparatus 1, a source gas supply unit 4 that supplies a source gas containing a thin film material to the film formation zone ZN is provided. More specifically, as shown in FIG. 1A, a source gas supply source 41 is connected via a valve 42 to a gas inlet 25 provided at the lower side of the vacuum chamber 2. The valve 42 opens and closes in response to an opening / closing command from the control unit 7 (FIG. 2) that controls the entire apparatus, and the source gas is pressure-fed from the source gas supply source 41 to the gas introduction unit 25 by opening the valve 42. A gas supply pipe 43 arranged so as to surround the film formation zone ZN from the X direction and the Y direction is connected to the gas introduction section 25 (the arrangement state of the gas supply pipe 43 will be described later with reference to FIG. 3). And FIG. 4 (a)). For this reason, the source gas fed from the source gas supply source 41 is supplied to the film formation zone ZN via the gas introduction part 25 and the gas supply pipe 43. Further, by applying a high frequency to the film formation zone ZN by the high frequency application unit 3, the raw material gas is turned into plasma, and the film formation zone ZN is filled with inductively coupled plasma.

  A sheet conveyance unit 5 that conveys the COP sheet S to the film formation zone ZN is provided. The sheet conveying unit 5 includes a feeding roller 51 in which one end of the COP sheet S is wound in a roll shape, and a take-up roller 52 in which the other end of the COP sheet S is wound in a roll shape. A COP sheet S is stretched. When the sheet drive motor 53 (FIG. 2) is activated in accordance with an operation command from the control unit 7, the COP sheet S is continuously or intermittently passed from the feeding roller 51 to the film formation zone ZN via the driven roller 54. After being transported in the X direction and subjected to the thin film formation process of the material substance in the film forming zone ZN, it is transported to the take-up roller 52 via the driven roller 55. In this way, the COP sheet S on which the material material thin film is formed is wound up by the winding roller 52. In the present embodiment, a ground potential is applied to the COP sheet S via the winding roller 52. As a result, a potential difference is generated between the coil 33 and a current flows to increase the plasma density around the rollers 54 and 55. As a result, the film quality of the thin film is improved and the deposition rate is improved.

  When the inductively coupled plasma generated in the film formation zone ZN comes into contact with the dielectric window 22 while the thin film is formed on the COP sheet S in this manner, the material substance is formed on the surface of the dielectric window 22 on the film formation zone ZN side. The film adheres and the stable formation of the thin film is impaired. Therefore, in order to suppress the film adhesion, in the present embodiment, a film transport unit 6 is provided. The film transport unit 6 transports a film F that transmits high frequency, for example, PET (polyethylene terephthalate or polyethylene terephthalate) or polyimide film F to a position in the vicinity of the surface of the dielectric window 22 on the film formation zone ZN side. F has a function of preventing the film from adhering to the dielectric window 22. Thus, in the present embodiment, the surface of the dielectric window 22 on the film formation zone ZN side corresponds to the “surface facing the film formation zone of the dielectric window” of the present invention.

  As shown in FIG. 1B, the film transport unit 6 includes a supply roller 61 in which one end of the film F is wound in a roll shape on the (−Y) direction side with respect to the film formation zone ZN, and the film formation zone ZN. And a collection roller 62 in which the other end of the film F is wound in a roll shape on the (+ Y) direction side, and the film F is stretched between them. When the film drive motor 63 (FIG. 2) is actuated in accordance with the operation command from the control unit 7, the film F is transferred from the supply roller 61 to the collection roller 62 along the film conveyance path stretched as described above. Be transported. As a result, the film F, which is positioned near the surface of the dielectric window 22 on the side of the film formation zone ZN and to which the film has adhered during the thin film formation process, is collected by the collection roller 62 and a new film F is fed from the supply roller 61. It is supplied to the vicinity position. In this way, the film F located in the vicinity of the surface of the dielectric window 22 on the film formation zone ZN side is appropriately replaced (film replacement processing). In the present embodiment, the film exchange process is performed intermittently. That is, the film exchange process is executed every time the thin film forming process is performed a plurality of times. Of course, the film exchange process may be performed every time, or the film exchange process may be performed immediately after the apparatus power is turned on or after a predetermined time has elapsed.

  Next, the operation of the inductively coupled plasma CVD apparatus 1 configured as described above will be described. In this inductively coupled plasma CVD apparatus 1, when the COP sheet S and the film F are mounted inside the vacuum chamber 2 by the operator and the door (not shown) of the vacuum chamber 2 is closed, the control unit 7 is stored in the memory (not shown). The thin film forming process is continuously executed by controlling each part of the apparatus according to a program stored in advance. First, the pressure in the vacuum chamber 2 is reduced by the vacuum pump P. When the pressure reaches a preset value, the high frequency generation source 31 is activated to apply a high frequency to the coil 23, whereby a high frequency magnetic field is applied to the film formation zone ZN via the dielectric window 22. In parallel with this, the valve 42 is opened to supply the source gas to the film formation zone ZN via the gas introduction part 25 and the gas supply pipe 43. As a result, in the film formation zone ZN, the raw material gas is turned into plasma and inductively coupled plasma is generated, and a thin film of a material substance contained in the raw material gas is formed on the surface of the COP sheet S facing the film formation zone ZN ( Thin film formation process). Note that the thin film forming process may be performed while the COP sheet S is continuously conveyed in the X direction by the sheet conveying unit 5, or the thin film is formed in synchronization with the intermittent conveying operation while intermittently conveying the COP sheet S. Processing may be executed. In this way, a thin film is formed on the surface of the COP sheet S, and the COP sheet S on which the thin film has been formed is wound up by the winding roller 52.

  When a part of the inductively coupled plasma generated in the film formation zone ZN comes into contact with the dielectric window 22 during the thin film formation process as described above, the adhesion of the film to the dielectric window 22 becomes a problem. However, in this embodiment, since the film F exists on the (+ Z) side of the dielectric window 22, that is, on the film formation zone ZN side, the dielectric window 22 is protected from the inductively coupled plasma. It is possible to effectively suppress film adhesion to the substrate. Of course, the amount of film adhering to the film F increases as the execution time of the thin film forming process increases, but in this embodiment, when the execution time of the thin film forming process reaches a certain value, the control unit 7 causes the film transport unit 6 to move. The controlled film F is collected on the collecting roller 62 and the fresh film F is supplied from the supply roller 61 to the vicinity.

  As described above, in the present embodiment, the film F can be disposed in the vicinity of the surface of the dielectric window 22 on the side of the film formation zone ZN during the thin film formation process, so that contamination of the dielectric window 22 can be suppressed. The cleaning frequency of the body window 22 can be greatly reduced. As a result, the film F functions as a “contamination prevention member” of the present invention, and the productivity of thin film formation by the inductively coupled plasma CVD apparatus 1 can be increased. it can.

  In the present embodiment, the film exchange process is performed in consideration of the possibility that an increase in the amount of film adhesion to the film F may affect the thin film formation process. For this reason, the thin film forming process is performed in a state where the film is not always attached to the film F or is maintained to such an extent that the film F does not affect the thin film forming process. As a result, the thin film forming process can be stably performed over a long period of time.

  Although the film exchange process is intermittently performed as described above, the time interval of the film exchange process is changed according to the film formation conditions (film material, source gas, film thickness, etc.) of the thin film on the COP sheet S. Yes. This is because even if the execution time of the thin film forming process is the same, the amount of film adhering to the film F varies greatly depending on the film forming conditions. Under various film forming conditions that the inventors of the present application experimented, the minimum to maximum ratio was 1:20. Therefore, when the amount of film deposition per unit time is small, it is preferable to set the time interval of the film exchange process relatively long, while narrowing the time interval as the amount of film deposition increases. Thus, stabilization of the thin film forming process can be achieved.

  Furthermore, in the above-described embodiment, a high frequency generated by the high frequency generation source 31 is applied to the coil 33 in a state in which a ground potential is applied to the window frame member 23 and the window pressing member 24 that support the dielectric window 22, and the dielectric is generated. A high frequency magnetic field is applied to the deposition zone ZN through the body window 22 to generate inductively coupled plasma. Thus, while the coil 33 functions as a cathode (cathode), the window frame member 23 and the window pressing member 24 function as an anode (anode), and greatly contribute to stabilization of the plasma state in the film formation zone ZN. In other words, in a state where the potentials of the window frame member 23 and the window pressing member 24 are floating, the plasma is not stable, and it is difficult to form a thin film on the surface of the sheet S.

  FIG. 3 is a view showing a second embodiment of the inductively coupled plasma CVD apparatus according to the present invention. The second embodiment is greatly different from the first embodiment in the configuration of the film transport unit 6, and the other configurations are basically the same as those in the first embodiment. Therefore, in the following, differences will be mainly described, and the same components will be denoted by the same reference numerals and description thereof will be omitted.

  In 2nd Embodiment, the film conveyance part 6 can selectively convey the film F which has two different width sizes (length in the X direction orthogonal to the film conveyance direction Y) W1 and W2. That is, although not shown in FIG. 3, a supply roller holding portion capable of selectively holding the supply rollers 61 of the width sizes W1 and W2 is provided on the (−Y) direction side of the dielectric window 22 and ( On the + Y) direction side, a collection roller holding portion capable of selectively holding the collection rollers 62 of the width sizes W1 and W2 is provided. Then, when the supply roller 61 and the collection roller 62 with the width size W1 are mounted on the supply roller holding unit and the collection roller holding unit, respectively, and the film F with the width size W1 is stretched between them, FIG. As shown in FIG. 4, the film F is positioned in the vicinity of the surface of the dielectric window 22 on the side of the film formation zone ZN so as to cover the dielectric window 22 with substantially the same size in plan view from above. On the other hand, when the supply roller 61 and the collection roller 62 having the width W2 are mounted on the supply roller holding unit and the collection roller holding unit, respectively, and the film F having the width W2 is stretched between them, FIG. As shown, the film F is positioned in the vicinity of the surface of the dielectric window 22 on the side of the film formation zone ZN so as to cover the dielectric window 22 over a wider range than in the case of the width size W1.

  By selectively using the films F having different width sizes W1 and W2 in this way, the flow of the source gas in the vacuum chamber 2 can be changed, and the thin film formation process can be performed with a gas flow suitable for the film formation conditions. It can be carried out.

  In the second embodiment, the film F having two types of width sizes can be conveyed. However, the type of the width size is not limited to “2”, and three or more types of width sizes can be used. The film F may be configured to be selectively transportable.

  FIG. 4 is a view showing a third embodiment of the inductively coupled plasma CVD apparatus according to the present invention. In the third embodiment, the vacuum chamber 2 has two processing spaces 2a and 2b. That is, the internal space of the vacuum chamber 2 is partitioned by the partition wall 2c, the first film formation zone ZNa is provided in the processing space 2a, and the second film formation zone ZNb is provided in the processing space 2b.

  Corresponding to the provision of the two processing spaces 2a and 2b as described above, the dielectric window, the high frequency application unit, the source gas supply unit and the film transport unit are provided for each of the film formation zones ZNa and ZNb. As for the transport unit, one that passes through both film forming zones ZNa and ZNb is provided. That is, in the sheet conveying unit 5 of the third embodiment, the feeding roller 51 and the driven roller 54 are arranged in one processing space 2a, and the winding roller 52 and the driven roller 55 are arranged in the processing space 2b. Then, the COP sheet S fed from the feeding roller 51 is conveyed to the film formation zone ZNa via the driven roller 54, and further conveyed to the film formation zone ZNb through the communication hole 2d provided in the partition wall 2c. It is taken up by the take-up roller 52 via the roller 55.

  A high frequency application unit 3a and a source gas supply unit 4a are provided corresponding to the first film formation zone ZNa, and a high frequency application unit 3b and a source gas supply unit 4b are provided corresponding to the second film formation zone ZNb. ing. Both the high-frequency applying units 3a and 3b are configured in the same manner as in the first embodiment. The source gas supply units 4a and 4b are basically configured similarly to the first embodiment. However, when the same type of thin film is formed, the same source gas is supplied from the source gas supply units 4a and 4b. However, when different types of thin films are stacked, the source gas supply unit 4a, From 4b, source gases containing different material substances are supplied.

  In order to protect the dielectric window 22a from the inductively coupled plasma generated in the first film formation zone ZNa and suppress the amount of film adhesion, the contamination prevention film Fa is located in the vicinity of the surface of the dielectric window 22a on the film formation zone ZN side. It is conveyed to. In addition, in the second film formation zone ZNb, in order to protect the dielectric window 22b from the inductively coupled plasma generated in the film formation zone ZNb and suppress the film adhesion amount, the antifouling film Fb is formed on the dielectric window 22b. The film is transported to a position in the vicinity of the surface of the film formation zone ZN. In addition, the structure of the film conveyance part which conveys these films Fa and Fb is also the same as the film conveyance part of 1st Embodiment.

  In the inductively coupled plasma CVD apparatus 1 configured as described above, the thin film of the material substance contained in the raw material gas supplied from the first raw material gas supply source 41a in the processing space 2a is used as the first thin film of the COP sheet S. Formed on the surface. During the thin film forming process in the processing space 2a, the contamination of the dielectric window 22a by the film material is effectively suppressed by the contamination prevention film Fa.

  The COP sheet S on which the first thin film is thus formed passes through the communication hole 2d of the partition wall 2c and is conveyed to the film formation zone ZNb in the processing space 2b. Then, a thin film of a material substance contained in the raw material gas supplied from the second raw material gas supply source 41b is formed on the first thin film as the second thin film. Even during the thin film forming process in the processing space 2b, the contamination of the dielectric window 22b by the film material is effectively suppressed by the contamination prevention film Fb. The COP sheet S on which two thin films are formed in this way is wound around the winding roller 52 via the driven roller 55.

  As described above, the application target of the present invention is not limited to the inductively coupled plasma CVD apparatus that forms a single thin film in the vacuum chamber 2, and two thin film formations are performed in the vacuum chamber 2. The present invention can also be applied to an inductively coupled plasma CVD apparatus in which a thin film of layers is formed. The same operational effects as those of the first embodiment can be obtained, and productivity can be further improved. Of course, the present invention can also be applied to an inductively coupled plasma CVD apparatus in which three or more processing spaces are provided in the vacuum chamber 2 and a thin film is formed in a film formation zone of each processing space.

  The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. In the above-described embodiment, the conveyance direction of the COP sheet S and the conveyance direction of the antifouling film F are configured to be orthogonal to each other. For example, as shown in FIG. 5, both are in the same direction (X direction). (4th Embodiment) may be comprised. However, in 3rd Embodiment, it is suitable to arrange | position so that the conveyance direction of the pollution prevention film F may orthogonally cross with respect to the conveyance direction of the COP sheet S. That is, by adopting such an arrangement, it is possible to optimize the time interval of the film replacement process for the antifouling films Fa and Fb depending on the degree of contamination for each of the dielectric windows 22a and 22b. As a result, the contamination of the dielectric windows 22a and 22b can be effectively suppressed in accordance with the contents of the thin film formation process in the processing spaces 2a and 2b.

  Further, in the above embodiment, the present invention is applied to an inductively coupled plasma CVD apparatus that forms a thin film on the COP sheet S. However, induction for forming a thin film by inductively coupled plasma CVD on other sheets The present invention can also be applied to a coupled plasma CVD apparatus.

  In the above embodiment, the anti-contamination film is supplied to the position near the dielectric window as the “anti-contamination member” of the present invention by a so-called roll-to-roll method, but a plurality of anti-contamination films are prepared. Alternatively, the anti-contamination film may be supplied in a so-called single-wafer method, in which the anti-contamination film is sequentially supplied to a position near the dielectric window.

  The present invention can be suitably applied to a technique for forming a thin film using the inductively coupled plasma CVD method, in particular, a so-called roll-to-roll inductively coupled plasma CVD apparatus.

DESCRIPTION OF SYMBOLS 1 ... Inductively coupled plasma CVD apparatus 2 ... Vacuum chamber 3, 3a, 3b ... High frequency application part 4, 4a, 4b ... Raw material gas supply part 5 ... Sheet conveyance part 6 ... Film conveyance part 2a, 2b ... Processing space 22 ... Dielectric Window 51 ... Feeding roller 52 ... Winding roller 61 ... Supply roller 62 ... Recovery roller F, Fa, Fb ... Contamination prevention film (contamination prevention member)
S ... COP sheet ZN, ZNa, ZNb ... Deposition zone

Claims (6)

A vacuum chamber having a dielectric window that transmits high frequencies;
A sheet conveying unit that unwinds the sheet from the unwinding roller, positions the surface of the sheet in a film formation zone inside the vacuum chamber, and winds the sheet with a winding roller;
A source gas supply unit for supplying source gas to the film formation zone;
A high frequency is applied to the source gas supplied to the deposition zone through the dielectric window to generate inductively coupled plasma of the source gas, and a thin film is formed on the surface of the sheet located in the deposition zone A high-frequency applying part for forming,
A contamination preventive member that suppresses contact between the dielectric window and the inductively coupled plasma generated in the film formation zone located in the vicinity of the surface of the dielectric window facing the film formation zone; Inductively coupled plasma CVD apparatus. The inductively coupled plasma CVD apparatus according to claim 1,
2. The inductively coupled plasma CVD apparatus, wherein the contamination preventing member is a film that transmits the high frequency. The inductively coupled plasma CVD apparatus according to claim 2,
A film that is positioned in the vicinity of the dielectric window and that is in contact with the inductively coupled plasma of the source gas is recovered by a recovery roller, and a film before being in contact with the inductively coupled plasma of the source gas is supplied from a supply roller An inductively coupled plasma CVD apparatus including a film transport unit that performs an exchange process. The inductively coupled plasma CVD apparatus according to claim 3,
The said film conveyance part is an inductively coupled plasma CVD apparatus which performs the said film exchange process intermittently, and changes the time interval of the said film exchange process according to the film-forming conditions of the thin film on the said sheet | seat. The inductively coupled plasma CVD apparatus according to claim 3 or 4,
The inductively coupled plasma CVD apparatus in which the film transport unit can transport a plurality of films having different width sizes in a width direction orthogonal to a direction in which the film is supplied. A vacuum chamber having a plurality of processing spaces and having a plurality of dielectric windows for transmitting high frequencies to the processing spaces for each of the processing spaces;
A sheet conveying unit that unwinds the sheet from the unwinding roller, winds the sheet with a winding roller after the surface of the sheet is positioned in a film formation zone inside each processing space;
A plurality of source gas supply units that are provided for each of the processing spaces and supply source gases to the film formation zones of the processing spaces;
A high frequency is applied to the source gas provided in each processing space and supplied to the film formation zone of the processing space through the dielectric window to generate inductively coupled plasma of the source gas, and A plurality of high-frequency application sections that form a thin film on the surface of the sheet located in the film zone;
A plurality of the dielectric windows that are provided in each of the processing spaces and that are located in the vicinity of the surface of the dielectric window that faces the film formation zone, and that suppresses contact between the dielectric window and the inductively coupled plasma generated in the film formation zone. An inductively coupled plasma CVD apparatus comprising a contamination prevention member.

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