JP2009138239A - Film-forming apparatus and film-forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film-forming method for cleaning an electrode in a period of forming a film on a substrate without stopping a film-forming operation, in a film-forming process of sending out the substrate from a feed roll which winds the long substrate around itself, forming a film with a plasma CVD technique while transporting the substrate, and winding the substrate having the film formed thereon onto the roll, and to provide a film-forming apparatus therefor. <P>SOLUTION: This film-forming apparatus has a plurality of film-forming parts which form a film with a plasma CVD technique arrayed and installed in a direction of transporting the substrate, and also has a means for cleaning the electrode in each film-forming part. The film-forming method includes: making at least one of the film-forming parts always stop the film-forming operation through airtightly separating the film-forming part from other spaces; and cleaning the electrode in the film-forming part of a stopped state with the cleaning means, as needed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to film formation on a substrate by plasma CVD, and more specifically, a film formation method capable of cleaning an electrode during film formation and stably performing long-term continuous film formation, and The present invention relates to a film forming apparatus for performing this film forming method.

  Thin film formation by plasma CVD is used for manufacturing optical elements, manufacturing moisture-proof films and protective films used for optical elements, manufacturing semiconductor devices, and manufacturing thin-film solar cells.

In order to efficiently perform film formation by plasma CVD while ensuring high productivity, it is preferable to perform film formation continuously on a long substrate.
As equipment for carrying out such a film forming method, a supply roll formed by winding a long substrate (web-shaped substrate) in a roll shape, and a winding roll for winding a film-formed substrate in a roll shape, A so-called roll-to-roll film forming apparatus is known. This roll-to-roll film forming apparatus inserts a long substrate from a supply roll to a take-up roll through a predetermined path that passes through a film formation chamber for forming a film on a substrate by plasma CVD. The film is continuously formed on the transported substrate in the film forming chamber while the substrate is fed out and the film-formed substrate is taken up by the take-up roll in synchronization.

By the way, in plasma CVD, an electrode for plasma-exciting a reaction gas is usually located in a film forming system (in a film forming space). Therefore, the film adheres not only to the substrate but also to the electrode.
In the roll-to-roll film forming apparatus as described above, film formation is continuously performed on a long substrate by plasma CVD. Therefore, when the film formation is continued, the film gradually adheres / deposits on the electrode. The film (adhered matter) deposited on the electrode eventually peels off and becomes particles, which may contaminate the substrate and the like.
Therefore, in the roll-to-roll film forming apparatus, in order to manufacture an appropriate product, it becomes necessary to clean the electrode at an appropriate timing and remove the adhered / deposited film.

Various proposals have been made for cleaning electrodes in such plasma CVD.
For example, in Patent Document 1, in a plasma CVD apparatus, a high-frequency electrode is divided into an electrode plate and an electrode body, a first hole is formed in the electrode plate, and a second hole corresponding to the first hole is formed in the electrode plate body. A plasma CVD apparatus (thin film forming apparatus) is disclosed in which a hole is provided, and an electrode plate is mounted on an electric body using a mounting pin that is inserted into the first hole and fitted into the second hole. .
Further, Patent Document 2 discloses a rod electrode that is long in the width direction of the substrate, a rod electrode cleaning unit (dirt removal unit) disposed on both sides of the substrate in the width direction, and a bar electrode in the longitudinal direction (substrate width direction). And a plasma CVD apparatus (thin film forming apparatus) for cleaning the bar electrode in a region removed from the substrate by moving the bar electrode by the moving mechanism during film formation. ing.

JP 2005-2423 A JP 2005-307289 A

According to the plasma CVD apparatus disclosed in Patent Document 1, the electrode plate can be attached and detached with a simple operation using a mounting pin, the time for electrode cleaning work is improved, the work efficiency is improved, and the apparatus movable efficiency is improved. Improvements can be made.
However, in order to clean the electrode, it is necessary to break the vacuum chamber (open to the atmosphere) and remove the electrode plate, so that the stop time of the apparatus for maintenance becomes long. Also, in the roll-to-roll apparatus, if the film deposition amount on the electrode plate exceeds the limit, the film formation is completed before the film formation on all the substrates wound around the supply roll is completed. And the electrode needs to be cleaned. Further, when the electrode is cleaned before the substrate of the supply roll is finished, it is necessary to break the vacuum in a state where the substrate exists in the vacuum chamber. At this time, adhesion / deposition to the electrode and the inner wall of the vacuum chamber is necessary. The peeled film peels off and rises as particles, which may contaminate the substrate.

On the other hand, according to the plasma CVD apparatus disclosed in Patent Document 2, the (rod) electrode can be cleaned during the film formation, and even in a roll-to-roll apparatus, the formation due to the contamination of the electrode is possible. Without stopping the film, it is possible to continuously perform film formation by plasma CVD until the substrate of the supply roll is completed.
On the other hand, in the apparatus disclosed in Patent Document 2, the film attached to the electrode is removed by a mechanical method, and the removed film is discharged out of the chamber by suction. Therefore, the apparatus is used only in an environment near atmospheric pressure. It cannot be used for plasma CVD in a vacuum, and its application is very limited.

  An object of the present invention is to solve the above-mentioned problems of the prior art, by feeding a substrate from a supply roll formed by winding a long substrate into a roll shape, and continuously performing plasma CVD while conveying the substrate. In roll-to-roll film formation by plasma CVD, the substrate after film formation is wound in a roll shape, while film formation is continuously performed on a long substrate, film formation is stopped The electrode can be cleaned without performing a vacuum break, and the film formation can be continuously performed without stopping the film formation due to the adhesion / deposition of the film to the electrode until the substrate of the supply roll is finished. It is an object of the present invention to provide a film forming method capable of forming a film and a film forming apparatus for performing the film forming method.

In order to achieve the above object, a film forming apparatus according to the present invention includes a film forming chamber for forming a film by plasma CVD on a surface of a substrate, and a substrate roll in the film forming chamber from a supply roll formed by winding a long substrate. A supply chamber, and a winding chamber for winding the substrate formed in the film formation chamber in a roll shape,
In addition, the film formation chamber includes a transport unit that transports the substrate along a predetermined transport path, and an electrode, a gas introduction unit, and the electrode that are arranged in a substrate transport direction corresponding to the transport path of the substrate by the transport unit A film forming apparatus comprising: a plurality of independent film forming units, and a separating unit that hermetically separates at least one film forming unit from the space in the film forming chamber. To do.

  In addition, the film forming method of the present invention feeds a long substrate wound in a roll shape, continuously forms the film by plasma CVD while transporting the substrate, and forms the formed long substrate. When wound into a roll, a plurality of independent film forming units having electrode cleaning means are arranged in the substrate transfer direction corresponding to the substrate transfer path, and during film formation on the substrate, At least one of the film forming units is always airtightly separated from other spaces and does not contribute to film formation, and during film formation on the substrate by a film forming unit other than the film forming unit that does not contribute to the film formation, If necessary, the film forming unit that does not contribute to the film formation performs electrode cleaning by the cleaning means.

In such a film forming apparatus of the present invention, at least one of the film forming units is always separated by the separating means to be in the film forming stopped state, and the film forming unit other than the film forming stopped state is used to form the substrate. It is preferable that the film has a driving control unit for the film forming unit that performs cleaning by the cleaning unit in the film forming unit in the film forming stopped state as necessary.
In the film forming apparatus and the film forming method of the present invention, the cleaning unit is preferably a cleaning gas introduction unit and a high-frequency power input unit to the electrode. It is preferable to introduce radicals generated in a space different from the film part, and it is preferable that the degree of vacuum can be adjusted independently for each film forming part.

In the present invention having the above-described configuration, the substrate is fed out from the supply roll, continuously formed by plasma CVD while transporting the substrate in the film forming chamber, and the formed substrate is wound into a roll. In film formation by two-roll plasma CVD, a film forming section having plasma CVD film formation on a substrate in a film formation chamber and having a cleaning means for electrodes (or other regions such as inner walls) is provided on the substrate. A plurality are arranged in the transport direction.
In addition, during film formation on the substrate, at least one film formation unit is always kept in a state that does not contribute to film formation, and if necessary, the film formation unit that does not contribute to film formation is removed by the cleaning means. Clean.

Therefore, according to the present invention, the film forming part in which the film is attached / deposited on the electrode is brought into a state where it does not contribute to the film forming, and the film forming part which has not contributed to the film forming so far (unused or electrode Film formation can be continuously performed continuously by allowing the film formation unit) that has been cleaned to contribute to film formation. In addition, the film forming unit in which a film (adhered matter) is deposited on the electrode can be cleaned by the cleaning unit during film formation by another film forming unit in a state where it does not contribute to film formation.
That is, according to the present invention, in film formation by roll-to-roll plasma CVD, the film is continuously formed on a long substrate, and the electrode is cleaned without stopping the film formation or performing a vacuum break. The film formation can be continuously performed without stopping the film formation due to the adhesion / deposition of the film to the electrode until the substrate of the supply roll is finished.

  Therefore, according to the present invention, particles can be continuously formed on a very long substrate without being adversely affected by particles or the like caused by the film deposited on the electrodes without stopping film formation. A product in which a high-quality film in which contamination due to water is suitably suppressed can be produced with high productivity and production efficiency.

  Hereinafter, a film forming apparatus and a film forming method of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

FIG. 1 shows a conceptual diagram of an example of a film forming apparatus of the present invention for carrying out the film forming method of the present invention.
A film forming apparatus 10 shown in FIG. 1 is used to manufacture an optical element, a moisture-proof film (gas barrier film) used for the optical element, a protective film used for the optical element, a semiconductor device, and a thin film solar cell. This is an apparatus for continuously forming a film on a long substrate Z (web-like substrate Z) used for manufacturing or the like.

  As an example, the film forming apparatus 10 includes a supply chamber 12 for supplying a substrate Z, a film forming chamber 14 for continuously forming a film on the substrate Z by plasma CVD, and a winding for winding the substrate Z that has been formed. And a chamber 16. In the film forming apparatus 10, the substrate Z is passed (inserted) through a predetermined path from the supply chamber 12 through the film formation chamber 14 to the winding chamber 16, and from the supply chamber 12 through the film formation chamber 14. The film formation is continuously performed on the substrate Z in the film formation chamber 14 while the substrate Z is conveyed to 16 (conveyance of the substrate Z in the longitudinal direction).

The supply chamber 12 is a part that supplies a long substrate Z, and includes a supply roll 20 and a guide roller 22.
The supply roll 20 is formed by winding a long substrate Z around the central axis 24 in a roll shape. The supply roll 20 is loaded in a predetermined position of the supply chamber 12 with the central shaft 24 being pivotally supported by a support shaft (not shown), and the substrate Z is rewound (in the example shown, clockwise (arrow r direction)). ), The substrate Z is continuously sent out.
The guide roller 22 is a known guide roller that guides the substrate Z to the film forming chamber 14 through a predetermined transport path. In the film forming apparatus 10, the guide roller 22 may be a driving roller or a driven roller. In the supply chamber 12, the guide roller 22 may be a roller that acts as a tension roller for adjusting the tension of the substrate Z, or a tension roller may be provided separately.

  In the present invention, the substrate Z on which the film is formed is not particularly limited, and various substrates that can be formed by plasma CVD, such as various resin films such as PET films, various metal sheets such as aluminum sheets, and the like. But all are available.

On the other hand, the winding chamber 16 is a portion for winding a long substrate Z (sheet material (film material)) formed on the surface (forming a thin film) in the film forming chamber 14, and a winding shaft 28; And a guide roller 30.
The take-up shaft 28 winds the film-formed substrate Z in a roll shape, and rotates in a direction (in the illustrated example, clockwise (arrow r direction)) to wind the substrate Z by a drive source (not shown). Then, the film-formed substrate Z is wound up.
The guide roller 30 is a known guide roller that guides the substrate Z transported from the film forming chamber 14 to the take-up roller 28 through a predetermined transport path, similarly to the previous guide roller 22. As with the previous guide roller 22, the guide roller 30 may be a drive roller or a driven roller, and may act as a tension roller. Further, the winding chamber 16 has a separate tension roller. Also good.

In the illustrated example, a long substrate Z is fed out from a supply roll 20 and carried into a film forming chamber 14 through a slit 12a, and then carried into a winding chamber 16 through a slit 16a through a predetermined transfer path. Then, it is inserted through a predetermined conveyance path wound around the winding shaft 28.
In this state, the film forming apparatus 10 supplies the substrate Z from the supply chamber 12 (that is, sends out the substrate Z from the supply roll 20) as described above, and deposits the substrate Z in the winding chamber 16. In the film forming chamber 14, the substrate Z is transported in the longitudinal direction in the film forming chamber 14 while being continuously wound on the substrate Z (that is, the winding of the substrate Z by the winding shaft 28). Do the membrane.
Accordingly, the supply roll 20 and the take-up shaft 28 are rotated by a driving source (not shown) so that the linear velocities are equal. Alternatively, the supply roll 20 may be configured to pull out the substrate Z from the supply roll 20 as a follower without providing a drive source.

In the film forming apparatus 10 of the illustrated example, both the slit 12a and the slit 16a are slits having a width and a length that allow the substrate Z to pass through without being obstructed. An airtight holding member such as a roller pair for airtight separation is provided. In the film forming apparatus 10, the film forming chamber 14, the supply chamber 12, and the winding chamber 16 are thereby separated in a substantially airtight manner.
Therefore, in the illustrated example, the supply chamber 12 and the take-up chamber 16 are not provided with a vacuum exhaust means such as a vacuum pump (not connected to the vacuum exhaust means).
However, the present invention is not limited to this, and if necessary, the supply chamber 12 and the take-up chamber 16 may be provided with a vacuum exhaust means to maintain a predetermined degree of vacuum in both chambers.

The film forming chamber 14 is a part that continuously forms a film on the surface of the substrate Z by plasma CVD while transporting the substrate Z. The drum 32, the guide rollers 34 and 36, the first film forming unit 38, the first film forming unit 38, and the like. The three film forming units 40 and the third film forming unit 42, the shutter 46, the exhaust unit 48, and the control unit 50 are configured.
Note that the film forming chamber 14 may be configured using a material used in vacuum chambers of various vacuum film forming apparatuses such as stainless steel.

The drum 32 is a cylindrical drum having a rotation axis in a direction orthogonal to the conveyance direction of the substrate Z (width direction of the substrate Z). The drum 32 is wound around a predetermined region on the side surface and rotated at a predetermined speed. The substrate Z is transported in the longitudinal direction while being positioned at a predetermined position (deposition position) in the deposition chamber 14.
In the illustrated example, the drum 32 is grounded. That is, in the illustrated example, the drum 32 functions as a counter electrode for the electrodes 56 of three film forming units described later.
The present invention is not limited to the configuration in which the drum 32 is grounded, and the drum 32 may be connected to a power source so as to function as an electrode. Preferably, the drum 32 has a temperature adjusting means, and cools (or heats) the substrate Z from the back surface (non-film-forming surface) during film formation by plasma CVD.

The guide rollers 34 and 36 are guide rollers that guide the substrate Z transported from the supply chamber 12, wind it around a predetermined region on the side surface of the drum 32, and transport the substrate Z from the drum 32 to the winding chamber 16. That is, the substrate Z is wound around a predetermined region on the side surface of the drum 32 by the guide rollers 34 and 36 and is conveyed in the longitudinal direction while being held in the predetermined region.
The guide rollers 34 and 36 may be drive rollers or driven rollers.

The exhaust means 48 exhausts (vacuum) the film forming chamber 14 to a predetermined degree of vacuum.
The exhaust means 48 is not particularly limited, and a plasma pump that uses a vacuum pump such as a turbo pump, a mechanical booster pump, or a rotary pump, an auxiliary means such as a cryocoil, or a means for adjusting the ultimate vacuum or the exhaust amount. Various known (vacuum) exhaust means used in the CVD apparatus can be used. In this regard, the same applies to the exhaust means 62 disposed in the first film forming unit 38, the second film forming unit 40, and the third film forming unit 42, which will be described later, and also the supply chamber 12 and the winding unit. The same applies to the case where the exhaust chamber 16 is provided with exhaust means.

The first film forming unit 38, the second film forming unit 40, and the third film forming unit 42 all perform film formation by plasma CVD, and perform film formation and cleaning described later independently of each other. That is, the first film forming unit 38, the second film forming unit 40, and the third film forming unit 42 constitute an independent film forming system.
Each of the film forming units corresponds to the area where the substrate Z of the drum 32 is wound, that is, the transport path of the substrate Z (facing), in the transport direction of the substrate Z (from upstream to downstream in the substrate transport direction). The film part 38, the second film forming part 40, and the third film forming part 42 are arranged in this order.

In addition, four partition plates 54 a to 54 d are provided inside the film formation chamber 14 so as to stand from the inner wall surface of the film formation chamber 14 toward the drum 32, arranged in the transport direction of the substrate Z. The four partition plates 54a to 54d (and the inner wall surface of the drum 32 and the film forming chamber 14) form three independent spaces arranged in the transport direction of the substrate Z. In other words, three independent spaces are formed by being partitioned by the four partition plates 54a to 54d.
The first film forming unit 38 is in the space formed by the partition plates 54a and 54b, the second film forming unit 40 is in the space formed by the partition plates 54b and 54c, and the third film forming unit 42 is in the partition plate 54c. And 54d, respectively.

  In the present invention, the number of film forming units (units having an electrode, a gas introducing unit, and a cleaning unit) arranged in the film forming chamber is not limited to three in the illustrated example. One or four or more.

  In the illustrated film forming apparatus 10, the first film forming unit 38, the second film forming unit 40, and the third film forming unit 42 have basically the same configuration. The unit 38 is performed as a representative example.

As described above, the first film formation unit 38 performs film formation (formation of a thin film) by plasma CVD on the surface of the substrate Z held / conveyed by the drum 32.
The first film forming unit 38 (the second film forming unit 40 and the third film forming unit 42) includes an electrode 56, a high frequency power source 58, a gas supply unit 60, and an exhaust unit 62.

The electrode 56 is disposed to face the drum 56 in the film forming system, that is, in a space formed by the partition plates 54a and 54b (and the inner wall surface of the film forming chamber 14) (hereinafter referred to as a film forming space). The electrode is a flat plate (or a curved surface parallel to the side surface of the drum 56) for film formation by plasma CVD. The high-frequency power source 58 is a power source that supplies the electrode 56 with high-frequency power for film formation by plasma CVD.
Both the electrode 56 and the high frequency power source 58 are not limited, and a known one used in plasma CVD may be used according to a film to be formed, a required film formation rate, or the like. Further, the high-frequency power supply 58 and the electrode 50 may be connected via a matching box for impedance matching as necessary.

In the illustrated first film forming unit 38 (film forming apparatus 10), the electrode 56 and the high frequency power source 58 are for cleaning the electrode 56 (or the inner wall of the film forming chamber 14, the surface of the partition plate, etc.). It also acts as a cleaning means.
Specifically, the first film forming unit 38 (the second film forming unit 40 and the third film forming unit 42) performs plasma cleaning with a cleaning gas and cleans the electrode 56 as well as during film formation. Also when performing the above, high frequency power for exciting the cleaning gas into plasma is supplied from the high frequency power source 58 to the electrode 56.

The gas supply means 60 introduces a reactive gas for performing film formation by plasma CVD into the film formation space, and has a gas supply source (connection means with the gas supply source), a flow rate adjustment means, and the like. It is a gas introduction means.
Moreover, the gas supply means 60 may supply not only the reaction gas but also various gases used in plasma CVD, such as an inert gas such as argon gas and nitrogen gas, together with the reaction gas. Moreover, you may supply reaction gas, inert gas other than that, etc. to the film-forming space by another supply means.

Here, in the illustrated first film forming unit 38, the gas supply unit 60 also functions as a cleaning unit. That is, when the gas supply means 60 is used for cleaning the electrode 56, the gas supply means 60 introduces a cleaning gas into the film formation space instead of the reaction gas.
In the present invention, the cleaning gas to be used is not particularly limited. Fluoride gas such as octafluoropropane (C ₃ F ₈ ) and fluorine nitride (NF ₃ ), etc. Any gas used as a cleaning gas for the inner wall surface of the chamber can be used.

In the present invention, the reaction gas and the cleaning gas are not limited to be supplied to the film formation space from the same gas supply means, and the reaction gas and the cleaning gas are supplied to the film formation space by different gas supply means. May be supplied.
In the illustrated example, the gas supply unit 60 is provided for each of the three film forming units. However, the present invention is not limited to this, and one gas supply unit 60 is provided for the three film forming units. The structure which has may be sufficient. In this case, it is preferable that the gas supply amount can be adjusted for each film forming unit.

The evacuation unit 62 evacuates the film formation space to have a predetermined degree of vacuum, and is a known evacuation unit used in a plasma CVD apparatus or the like, similar to the evacuation unit 48.
In the illustrated example, the exhaust unit 62 is provided for each of the three film forming units. However, the present invention is not limited to this, and one exhaust unit for the three film forming units, or One exhaust unit may be used for the three film forming units and the film forming chamber 14. In this case, it is preferable that the exhaust can be adjusted for each film formation space.

The shutter 46 closes the open surface (that is, the open surface facing the drum 32) of any one of the first film forming unit 38, the second film forming unit 40, and the third film forming unit 42. The film forming space (film forming system) of each film forming unit and the space in the film forming chamber 14 are hermetically separated (hereinafter simply referred to as “film forming unit closed”).
In the illustrated film forming apparatus 10, during film formation, the shutter 46 always has one of the first film forming unit 38, the second film forming unit 40, and the third film forming unit 42. Is blocked. That is, in the illustrated film forming apparatus 10 (film forming chamber 14), during film formation, one of the three film forming units is always in a state in which no film is formed (synthesizing). It is in a state that does not contribute to the film). This will be described in detail later.

The shutter 46 can close the film forming portion according to the shape of the open surface of the film forming space formed by the partition plates 54a to 54d and the inner wall surface of the film forming chamber 14 (the open surface of the film forming space is hermetically sealed). What is necessary is just to utilize a plate-like object or a lid that can be closed.
Here, in the case of a plate-like object or lid that closes the open surface, it may be difficult to completely close the film-forming portion in an airtight manner. However, in the present invention, the film formation on the substrate Z and the cleaning of the electrode 56 in each film formation unit are performed in accordance with the film formation conditions, the cleaning process, the capability of each exhaust means, the performance of the shutter 46, and the like. As long as it does not adversely affect the shutter 46, the shutter 46 may block the film forming unit substantially air tightly instead of completely closing the film forming unit.

It should be noted that the blocking of the film forming unit by the shutter 46 and the movement of the shutter 46 to each film forming unit may be performed by a known plate-like object (or housing) moving means.
In the illustrated film forming apparatus 10, the first film forming unit 38, the second film forming unit 40, and the third film forming unit 42 are closed by moving one shutter 46. The invention is not limited to this, and a shutter is disposed corresponding to each of the first film forming unit 38, the second film forming unit 40, and the third film forming unit 42, and each film forming unit is provided with a corresponding shutter. You may make it obstruct | occlude with.

The control unit 50 controls and manages the overall operation of the film forming apparatus 10.
Therefore, the control unit 50 also controls the driving of each film forming unit (operations of the high-frequency power source 58, the gas supply unit 60, and the exhaust unit 62) and the operation of the shutter 46.

Hereinafter, the operation of the film forming apparatus 10 will be described to describe the present invention and the control unit 50 in more detail. The operation of each part below is controlled by the control unit 50 as described above.
In the following example, there is one film forming unit that does not perform film formation (does not contribute to film formation). However, the present invention is not limited to this, and a plurality of film forming units are formed. As a state where it is not performed, film formation on the substrate Z may be performed.

In the film forming apparatus 10, when film formation is started, a supply roll 20 formed by winding the substrate Z is loaded into the supply unit 12, and the leading end of the long substrate Z is moved from the guide roller 22 to the slit 12 a. Then, the film is passed through the film forming chamber 14, and in the film forming chamber 14, the guide roller 36, the drum 32, and the guide roller 34 are passed through a predetermined path in this order, and the substrate Z is wound around a predetermined region of the drum 32, and the slit 16a From the guide roller 30 to the take-up shaft 28, and a predetermined amount is wound around the take-up shaft 28.
Accordingly, the substrate Z is inserted from the supply unit 12 (supply roll 20) into the winding chamber 16 (winding shaft 28) through a predetermined path passing through the film forming chamber 14. Such insertion of the substrate Z may be performed manually, or may be performed automatically using a known sheet-like material conveying means.

When the insertion of the substrate Z and other necessary preparations and operations are completed and the preparation for starting the film formation on the substrate Z is completed, the exhaust means 48 of the film formation chamber 14 and the first film formation unit 38 are completed. Then, the respective exhaust means 48 of the second film forming unit 40 and the third film forming unit 42 are driven to make the respective spaces have a predetermined degree of vacuum.
Further, as described above, in the film forming apparatus 10, one of the first film forming unit 38, the second film forming unit 40, and the third film forming unit 42 does not always form a film during film formation.
In this example, as an example, first, the first film forming unit 38 does not form a film, and therefore the shutter 46 closes the first film forming unit 38. In this example, it is assumed that the electrodes 56 of all the film forming units are in an unused state (a state where cleaning is completed) at the start of the film formation.

When the film forming chamber 14 and the film forming spaces of the respective film forming units reach a predetermined degree of vacuum, the substrate Z is transferred at a predetermined transfer speed (from the winding of the substrate Z by the winding shaft 28 and the supply roll 20). Next, the substrate Z is sent out).
Further, in the second film forming unit 40 and the third film forming unit 42, the high frequency power source 58 is driven to supply the output high frequency power corresponding to the film formation to the electrode 56, and the gas supply means 60 performs the film formation. A predetermined amount of reaction gas (or other necessary gas) to be supplied is supplied to the film formation space in accordance with the target film formation rate, and film formation by plasma CVD is performed on the surface of the substrate Z. Start. That is, at this time, the film formation on the substrate Z is performed by the two film formation units of the second film formation unit 40 and the third film formation unit 42.

As described above, when the film formation by plasma CVD is continued, the film is also deposited / deposited on the surface of the electrode 56.
When a predetermined amount of a predetermined film is attached (/ deposited) to the electrode 56 of the second film forming unit 40 and / or the third film forming unit 42, the shutter 46 is moved to take the second film forming unit 40 as an example. Further, the driving of the high frequency power source 58 and the gas supply means 60 is stopped, and the film formation by the second film forming unit 40 is stopped.
In parallel with the stop of the film formation in the second film formation unit 40, the first film formation unit 38 drives the high-frequency power source 58 to supply the output high-frequency power corresponding to the film formation to the electrode 56. A reactive gas for film formation is supplied from the gas supply means 60 to the film formation space of the first film formation unit 38 in a predetermined amount according to the target film formation rate, and the first film formation unit 38. The film formation by is started. That is, at this time, the film formation is performed by the two film formation units, the first film formation unit 38 and the third film formation unit 42.

  In the present invention, the detection of the attachment of a predetermined amount of film to the electrode 56 is, for example, a known method such as a method of directly detecting the amount (film thickness) of the film attached to the electrode using a laser displacement meter. A method of directly detecting the amount of the film attached to the electrode 56 by means; knowing, for example, the time and speed of attachment of a predetermined amount of film to the electrode 56 by conducting experiments and simulations conducted in advance; A method of detecting (predicting) the amount of the film attached to the electrode 56 over the course of the film formation time; depending on the film formation rate, etc. It is considered that the amount of film deposited on the electrode 56 has reached a predetermined amount the earliest (or the latest or in a predetermined order) by combining these two or more methods. Detected method How to adoption, a variety of methods are available. This also applies to this point.

In the second film forming unit 40 that stopped the film formation, supply of a predetermined amount of cleaning gas corresponding to the cleaning from the gas supply means 60 is started at a predetermined timing, and an output corresponding to the cleaning is output from the high-frequency power source 58. Is supplied to the electrode 56, and plasma cleaning of the electrode 56 or the surface of the partition plate and the inner wall surface of the film forming chamber 14 is started. Further, if necessary, the exhaust by the exhaust means 62 of the second film forming unit 40 is set to a predetermined state corresponding to the cleaning.
Thereby, the film | membrane adhering to the electrode 56 grade | etc., Is removed, and the electrode 56 is cleaned. Further, the particles removed from the electrode 56 and the like are exhausted to the outside of the film formation space by the exhaust means 62.

When the cleaning of the second film forming unit 40 is started and a predetermined time has elapsed, the driving of the gas supply means 60 and the high-frequency power source 58 is stopped, and the cleaning is finished. When the driving of the exhaust unit 62 of the second film forming unit 40 is adjusted according to the cleaning, the exhaust state by the exhaust unit 62 is returned to the state corresponding to the film formation.
Note that the cleaning end time may be set as appropriate in accordance with experiments or simulations performed in advance. Alternatively, the cleaning may be terminated by detecting the amount of the film directly attached to the electrode 56 in the same manner as the detection of the film adhesion.

When film formation on the substrate Z is continued and the amount of film attached to the electrode 56 of the third film forming unit 42 reaches a predetermined amount, the shutter 46 is moved to close the third film forming unit 42, In the same manner as the second film forming unit 40, the film formation by the third film forming unit 42 is stopped.
At the same time, similarly to the first film forming unit 38, the film forming by the second film forming unit 40 that has finished cleaning the electrode 56 is resumed. In other words, at this time, the film formation by the two film formation units of the first film formation unit 38 and the second film formation unit 40 is being performed.
Further, at a predetermined timing, the electrode 56 (or another position) of the third film forming unit 42 is cleaned in the same manner as the second film forming unit 40 described above.

  Further, the film formation on the substrate Z is continued, and when the amount of the film attached to the electrode 56 of the first film formation unit 38 reaches a predetermined amount, the first film formation is performed by closing the film with the shutter 46 in the same manner as before. The film formation by the unit 38 is stopped, and at the same time, the film formation by the third film formation unit 42 that has finished cleaning the electrode 56 is restarted, and the electrode of the first film formation unit 38 is cleaned at a predetermined timing. .

Hereinafter, similarly, the film formation stop / cleaning of the second film formation unit 40 and the film formation restart by the first film formation unit 38 are performed, and then the film formation stop / cleaning of the third film formation unit 42, Then, the film formation is continuously performed by sequentially repeating the restart of the film formation by the second film forming unit 40, and when the substrate Z of the supply roll 20 is completed, or the substrate Z having a predetermined length is formed. Is wound around the winding shaft 28, the film formation is finished.
The film formation may be completed in the same manner as a known roll-to-roll film forming apparatus in which the substrate Z is fed from the normal supply roll 20 and wound around the film-formed substrate Z.

As is clear from the above description, according to the film forming apparatus of the present invention, it is possible to perform cleaning of the electrodes in the unused film forming units by switching between a plurality of film forming units. It is possible to clean the electrode to which the thin film has adhered while performing the film continuously and without breaking the vacuum. In the film formation by so-called roll-to-roll plasma CVD, it can be continuously applied to a long substrate. The film can be continuously formed without stopping the film formation due to the adhesion of the film to the electrode until the substrate of the supply roll is finished by performing the cleaning of the electrode while performing the film formation. .
Therefore, according to the present invention, particles can be continuously formed on a very long substrate without being adversely affected by particles or the like caused by the film deposited on the electrodes without stopping film formation. A product in which a high-quality film in which contamination due to water is suitably suppressed can be produced with high productivity and production efficiency.

The above example is an example in which the present invention is applied to an apparatus for forming a film by a plasma CVD apparatus while supporting / transporting the substrate Z using a drum, but the present invention is not limited to this. The present invention can be used for plasma CVD apparatuses having various configurations.
FIG. 2 shows a conceptual diagram of an example thereof.

The film forming apparatus 70 shown in FIG. 2 is similar to the film forming apparatus 10 shown in FIG. 1, and feeds the substrate Z from the supply roll 20 formed by winding a long substrate into a roll shape, and the take-up shaft 28. Roll film formation is performed continuously on a long substrate Z by performing film formation by plasma CVD on the substrate Z to be transported while synchronously winding the substrate Z on which film formation has been performed. This is a roll film forming apparatus.
Since the film forming apparatus 70 uses many members similar to those of the film forming apparatus 10 of FIG. 1, the same reference numerals are given to the same members, and the following description will mainly be performed on different parts. .

Like the film forming apparatus 10, the film forming apparatus 70 shown in FIG. 2 is transported to a supply chamber 72 in which a supply roll 20 formed by winding a long substrate Z around the central shaft 24 in a roll shape is loaded. A film forming chamber 74 for forming a film by plasma CVD on the substrate Z and a winding chamber 76 for winding the film-formed substrate Z around the winding shaft 28 in a roll shape are configured.
In the film forming apparatus 70, both the supply chamber 72 has one guide roller 22 and the winding chamber 76 has one guide roller 30 except for the supply chamber 12 and the previous film forming apparatus 10. It has the same configuration as the winding chamber 16. That is, the illustrated film forming apparatus 70 is substantially different from the film forming apparatus 10 only in the film forming chamber 74.

  In the film forming apparatus 70, the film forming chamber 72 performs film formation and cleaning by plasma CVD independently of each other (that is, constitutes a film forming system independent of each other), and the second film forming chamber 80 and the second film. There are three film forming units, a film forming unit 82 and a third film forming unit 84, rollers 86 and 88, a folding roller 90, an exhaust unit 92, and a shutter 94.

The evacuation unit 92 evacuates the film forming chamber 72 to a predetermined degree of vacuum, like the previous evacuation unit 48.
In the illustrated example, the film forming chamber 72 has only one exhaust means 92. However, the present invention is not limited to this, and the first film forming unit 80, the first The three film forming units of the second film forming unit 82 and the third film forming unit 84 may be individually provided with exhaust means.

In the film forming chamber 74, the substrate Z supplied from the supply chamber 72 is conveyed to the upper folding roller 90 by the roller 86, guided to the lower roller 88 by the folding roller 90, and the conveyance path is taken up by the roller 88. Is conveyed to 76. That is, the substrate Z is folded back by 180 ° by the folding roller 90 and is conveyed so as to reciprocate in the vertical direction in the film forming chamber 74.
Further, the rollers 86 and 88 and the folding roller 90 are arranged so that the substrates Z before and after being folded by the folding roller 90 are parallel to each other.

Here, the three film forming units are arranged in the vertical direction between the conveyance paths of the substrate Z that is folded and conveyed 180 ° by the folding roller 90 (inside the substrate Z that is folded and conveyed). In the illustrated example, the first film forming unit 80, the second film forming unit 82, and the third film forming unit 84 are disposed between the substrates Z that are folded and conveyed from below.
Accordingly, in the film forming apparatus 70, the substrate Z is formed by facing the three film forming portions in the upward conveyance path from the roller 86 to the folding roller 90, and is folded by the folding roller 90. Thus, in the downward conveyance path from the folding roller 90 toward the roller 88, film formation is performed again facing the three film formation units.

That is, in the illustrated film forming apparatus 70, while the substrate Z is reciprocated vertically in the film forming chamber 74, film formation by plasma CVD is performed twice by the same film forming system. Therefore, film formation at a high film formation rate is possible very efficiently.
Such a film forming apparatus that reciprocates the substrate Z and forms a film inside the substrate Z is described in detail in, for example, Japanese Patent Application Laid-Open No. 8-63746 by the applicant of the present application.

As described above, the film forming apparatus 70 is arranged in the vertical direction between the substrates Z that are folded and conveyed in the vertical direction, and the first film forming unit 80, the second film forming unit 82, and the third film forming unit are arranged. Three film forming sections of the section 84 are arranged.
Here, since the first film forming unit 80, the second film forming unit 82, and the third film forming unit 84 have basically the same configuration as in the previous film forming apparatus 10, The first film forming unit 80 is used as a representative example.

  The first film forming unit 80 (second film forming unit 82 and third film forming unit 84) performs film formation by plasma CVD, and includes an electrode 56, a high-frequency power source 58, and counter electrodes 96 and 98. Have. Further, each film forming section is connected to a gas supply means for supplying a reactive gas (or other necessary gas such as argon) similar to the gas supply means 60 and a cleaning gas, and from this gas supply means. A gas supply port 99 for supplying (discharging) the supplied gas into the film forming unit (film forming system (film forming space)) is disposed.

The electrode 56 is a plate-like electrode arranged in parallel to the substrate Z at the center of the substrate Z that is reciprocally conveyed, and the high-frequency power source 58 is connected to the electrode 56.
On the other hand, the counter electrodes 96 and 98 are plate-like electrodes arranged in parallel to the substrate Z so as to sandwich the substrate Z to be reciprocally conveyed from both sides, and are grounded. In the illustrated example, the counter electrodes 96 and 98 are common to the three film forming units and extend to all the film forming units. However, the present invention is not limited to this, You may provide a counter electrode independently for every film-forming part.
The gas supply means is also the same as in the previous example, and a reactive gas (or other necessary gas) for performing film formation by plasma CVD and a cleaning gas are formed from the gas supply port 99. Supply in space.

A partition plate 100a is disposed under the first film forming unit 80 so as to partition the space inside the substrate Z that is folded and conveyed in the vertical direction. In addition, a similar partition plate 100b is disposed between the first film forming unit 80 and the second film forming unit 82, and the same between the second film forming unit 82 and the third film forming unit 84. A partition plate 100 c is disposed, and a similar partition plate 100 d is disposed on the third film forming unit 84.
That is, in the film forming apparatus 70 (film forming chamber 74), the substrate Z transported back and forth in the vertical direction, and the partition plates disposed above and below the film forming unit and between the film forming units, A film forming space (film forming system) corresponding to the film forming unit is configured.

The shutter 94 shields the space between the substrate Z and the electrode 56 between the partition plates to prevent the electrode 56 and the substrate Z from facing each other, thereby preventing the reaction gas or the like from reaching the substrate Z. It is arranged between the electrode 56 and the folded substrate Z. In other words, the shutter 94 includes two sheets of a shielding plate disposed between the electrode 56 and the substrate Z facing the folding roller 90 and a shielding plate disposed between the electrode 56 and the substrate Z facing the roller 88. It is comprised by a pair of shielding board.
In the illustrated example, as in the previous example, one (a pair) of shutters 94 is provided for the three film forming units, and by moving the shutter 94 up and down, a substrate is formed in each film forming unit. The space between Z and the electrode 56 is shielded (hereinafter referred to as “film formation section is closed”).

  Also in the illustrated film forming apparatus 70, as in the previous film forming apparatus 10, one film forming unit is always closed by a shutter so as not to contribute to film formation, and the electrode 56 of the film forming unit that does not contribute to this is formed. By performing plasma cleaning as necessary, the electrodes can be cleaned during film formation, that is, continuously formed on a very long substrate without stopping film formation. Thus, a product in which a high-quality film in which contamination by particles is suitably suppressed can be manufactured with high productivity and production efficiency.

  For example, the substrate Z is pulled out from the supply roll 20 and sent to the film forming chamber 74, the substrate Z is guided upward by the roller 86, the conveyance path is folded back by the folding roll 90, and the substrate Z is guided downward, and the roller 88 By guiding the substrate Z to the winding chamber 76 and winding a predetermined amount around the winding shaft, the substrate Z is transferred by a predetermined transfer path from the supply chamber 72 to the winding chamber 74 through the film forming chamber 74. Insert.

Next, the transfer of the substrate Z is started, the exhaust of the film forming chamber 74 is started, and when the predetermined vacuum degree is reached, the first film forming unit 80 is initially moved by the shutter 94 as in the previous example. The film is closed and the second film forming unit 82 and the third film forming unit 84 form a film.
When the amount of the film attached to the electrode 56 of the second film forming unit 82 reaches a predetermined amount, the second film forming unit 82 is closed by the shutter 94 to stop the film forming of the second film forming unit 82, and Then, the first film forming unit 80 supplies the high-frequency power to the electrode 56 and introduces the reactive gas into the film forming space, so that the first film forming unit 80 and the third film forming unit 84 form the film. On the other hand, the second film forming unit 82 that stopped the film formation introduces a cleaning gas to perform plasma cleaning of the electrodes and the like.

The film formation is continued, and when the amount of the film adhering to the electrode 56 of the third film forming unit 84 reaches a predetermined amount, the third film forming unit 84 is closed by the shutter 94 to stop the film formation, and the cleaning is finished. The film formation in the second film formation unit 80 is resumed, the film formation is performed by the first film formation unit 80 and the second film formation unit 82, and the third film formation unit 84 that has stopped the film formation is a cleaning gas. To clean the electrodes and the like.
Hereinafter, similarly, the film formation stop / cleaning of the first film formation unit 80 and the film formation restart by the third film formation unit 84 are performed, and then the film formation stop / cleaning of the second film formation unit 82 is performed. Then, the film formation is continuously performed by repeating the restart of the film formation by the first film forming unit 80, and when the substrate Z of the supply roll 20 is completed, or the substrate Z having a predetermined length is formed. Is wound around the winding shaft 28, the film formation is finished.

In the film forming apparatus 70 shown in FIG. 2, an electrode 56 connected to a high-frequency power source is disposed between the substrates Z that are folded and transported, and the counter electrodes 96 and 98 that are grounded with the substrate Z that is folded and transported interposed therebetween. Is arranged.
However, the present invention is not limited to this, and an electrode connected to a high-frequency power source is arranged with the substrate Z to be folded and conveyed, and a counter electrode to be grounded is disposed between the substrates Z to be folded and conveyed. You may arrange. At this time, since a film is deposited / deposited on the counter electrode, a high frequency power source is also connected to the counter electrode in order to clean the counter electrode. Alternatively, the connection of the high frequency power source may be switched between an electrode and a counter electrode. Note that when the electrode is cleaned using a remote plasma source described later, it is not necessary to supply high-frequency power to the counter electrode.
In the film forming apparatus 70 shown in FIG. 2, the film forming chamber 74 (vacuum chamber) may be grounded without providing the counter electrode 96, so that the film forming chamber 74 has the function of the counter electrode.

In the above example, the cleaning gas is excited into plasma (radical) by introducing a cleaning gas into the film formation space and supplying high frequency power to the electrode 56 for film formation by plasma CVD. However, the present invention is not limited to this, and various cleaning methods can be used.
As an example, instead of generating plasma (plasma excitation) in the film formation space, plasma cleaning of the electrode 56 is performed by introducing plasma (radical) generated in another space into the film formation space. (Cleaning by remote plasma). By utilizing such remote plasma (plasma generation for cleaning outside the film formation system), it is possible to prevent the high frequency for cleaning from affecting the substrate Z during film formation, and more stable film formation. Is possible.

For example, as conceptually shown in FIG. 3 with reference to the film forming chamber 14 of the previous film forming apparatus 10, the first film forming unit 38, the second film forming unit 40, and the first film forming unit 3 A remote plasma source 104 is provided in the film forming unit 42, a cleaning gas converted into plasma is generated in the remote plasma source 104, this cleaning gas is supplied to the corresponding film forming unit, and the same as in the previous example Further, a configuration in which plasma cleaning of the electrode 56 (or other part) is also possible.
In FIG. 3, the high-frequency power source 58, the gas supply means 60, and the exhaust means 62 are omitted in order to clearly show the configuration having the remote plasma source 104.

As the remote plasma source 104, various types can be used as long as they can generate cleaning gas into plasma and supply it to the film forming unit.
For example, in the case of a remote plasma source that generates inductively coupled plasma, a reaction vessel communicating with the film forming unit, an exhaust means for evacuating the reaction vessel (vacuum), a coil, and high-frequency power to the coil A remote plasma source having a high-frequency power source to be supplied and a gas supply means for supplying a cleaning gas into the reaction vessel is exemplified.
In this remote plasma source, the inside of the reaction vessel is brought to a predetermined degree of vacuum by the exhaust means, the cleaning gas is supplied into the reaction vessel by the gas supply means, and the induction electric field is generated by supplying the high frequency power from the high frequency power source to the coil. Then, the cleaning gas is excited to form an inductively coupled plasma. The plasmaized cleaning gas (cleaning gas plasma) is supplied into the reaction container by the pressure of the cleaning gas supplied into the reaction container, and the electrodes and the like are plasma-cleaned as before.

  In the present invention, a film forming unit that performs electrode cleaning using a remote plasma source, and a cleaning gas that is introduced into the film forming chamber and high-frequency power is supplied to the electrode to clean the electrode. The film part may be mixed.

In the present invention, the film formed in the film forming unit may be the same film, or a different film may be formed in each film forming unit.
Also, when forming different films in each film forming unit, as an example, a group consisting of two or more film forming units is formed with the film forming unit being an even number of 4 or more, and film formation and cleaning are performed for each group. A method of alternately performing the above is also suitable.

As an example, six film forming units A to F are arranged in the transport direction, the film forming units A to C are set as one set, and the film forming units D to F are set as one set. In addition, the film forming unit A, the film forming unit B, and the film forming unit C form different films, and the film forming unit A and the film forming unit D form the same film, and the film forming unit B and the film forming unit E. Form the same film, and the film forming unit C and the film forming unit F form the same film, respectively.
In addition, first, the film forming units A to C are stopped (states that do not contribute to film formation), and film formation is performed on the substrate by the film forming units D to F, and a predetermined amount is applied to the electrodes of the film forming units D to F. When the film is attached, the film formation in the film forming units A to C is started in accordance with the previous example, the film forming units D to F are stopped, and then the film forming units D to D at a predetermined timing. Clean F.
Further, the film formation is continued, and when a predetermined amount of film adheres to the electrodes of the film forming units A to C, the film formation in the film forming units D to F that has been cleaned is resumed, and the film forming units A to C The film forming units A to C are cleaned at a predetermined timing, and thereafter, the film forming units A to C and the film forming units D to F are similarly formed. The film and film formation stop / cleaning are alternately performed.

As described above, the film forming apparatus and the film forming method of the present invention have been described in detail. However, the present invention is not limited to the above embodiments, and various improvements and modifications can be made without departing from the gist of the present invention. Of course, it's also good.
For example, the above-described example is an apparatus for forming a film while the substrate is wound around and transported on a drum, or an apparatus for forming a film between the substrates by returning and transporting the substrate. However, the present invention is not limited thereto. In addition, for example, as shown in Patent Document 2, the present invention can be suitably used for an apparatus having a configuration in which a substrate is conveyed linearly and a plurality of film forming units are arranged along the conveyance path.

It is a conceptual diagram of an example of the film-forming apparatus of this invention. It is a conceptual diagram of another example of the film-forming apparatus of this invention. It is a conceptual diagram of another example of the film-forming apparatus of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10,70 Film-forming apparatus 12,72 Supply chamber 14,74 Film-forming chamber 16,76 Winding chamber 20 Supply roll 22,30,34,36 Guide roller 24 Center shaft 28 Winding shaft 32 Drum 38,80 First composition Film part 40, 82 Second film forming part 42, 84 Third film forming part 46, 94 Shutter 48, 62, 92 Exhaust means 50 Control part 54a, 54b, 54c, 54d, 100a, 100b, 100c, 100d Partition plate 56 Electrode 58 High-frequency power supply 60 Gas supply means 86, 88 Roller 90 Folding roller 104 Remote plasma source

Claims (6)

A film formation chamber for forming a film by plasma CVD on the surface of the substrate, a supply chamber for supplying the substrate to the film formation chamber from a supply roll formed by winding a long substrate, and a film formation in the film formation chamber A winding chamber for winding the substrate into a roll,
In addition, the film formation chamber includes a transport unit that transports the substrate along a predetermined transport path, and an electrode, a gas introduction unit, and the electrode that are arranged in a substrate transport direction corresponding to the transport path of the substrate by the transport unit A film forming apparatus comprising: a plurality of independent film forming units, and a separating unit that hermetically separates at least one film forming unit from the space in the film forming chamber.   At least one of the film forming units is always separated by the separating means to be in a film formation stop state, and the film formation is performed as necessary during film formation on the substrate by the film formation unit other than the film formation stop state. The film forming apparatus according to claim 1, further comprising: a driving control unit for the film forming unit that performs cleaning by the cleaning unit in the film forming unit in a stopped state.   The film forming apparatus according to claim 1, wherein the cleaning unit is a cleaning gas introduction unit and a high-frequency power input unit to the electrode.   The film forming apparatus according to claim 1, wherein the cleaning unit is a unit for introducing radicals generated in a space different from the film forming unit.   The film forming apparatus according to claim 1, wherein the degree of vacuum can be adjusted independently for each film forming unit. Sending out a long substrate wound in a roll shape, continuously forming a film by plasma CVD while transporting the substrate, and when winding the formed long substrate in a roll shape,
A plurality of independent film forming units having electrode cleaning means are arranged in the substrate transfer direction corresponding to the substrate transfer path, and at least one film forming unit is always formed during film formation on the substrate. Is airtightly separated from other spaces so that it does not contribute to film formation. During film formation on a substrate by a film formation unit other than the film formation unit that does not contribute to film formation, the film formation is performed as necessary. The film forming method which does not contribute to the process performs cleaning of the electrode by the cleaning means.

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