JPS6299475A - Thin film forming device - Google Patents
Thin film forming deviceInfo
- Publication number
- JPS6299475A JPS6299475A JP23953785A JP23953785A JPS6299475A JP S6299475 A JPS6299475 A JP S6299475A JP 23953785 A JP23953785 A JP 23953785A JP 23953785 A JP23953785 A JP 23953785A JP S6299475 A JPS6299475 A JP S6299475A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- plate
- film
- glass plate
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
r +1(業1の利用分野]
この発明(、l、基板トに薄膜を形成する薄膜形成装置
に関するものでろ、。[Detailed Description of the Invention] r+1 (Field of Application of Industry 1) This invention relates to a thin film forming apparatus for forming a thin film on a substrate.
Cf、Y束の技術〕 第3図は従来装置の構造を示す模式図である。Cf, Y bundle technology] FIG. 3 is a schematic diagram showing the structure of a conventional device.
図にJ−、+い−r 、 (11は反応性気体を光化学
反応により分離する)に源、(2)は反応室(3)と光
源(1)とを分離する仕切ガ・)ス板、(/1)は<
V+ リ防市川の保護膜である。前記の保X!f膜(/
11 +、1仕切ガラス板(2)に反応性気体の分解生
成物が付着して光源(1)からの光を遮断するとどのj
fい、1゛うに、前記仕切ガラス板(2)の表面を走行
ずろもので、それ自身は光を透過ずろ。In the figure, J-, +i-r, (11 is a source for separating reactive gas by photochemical reaction), (2) is a partition gas plate that separates the reaction chamber (3) and the light source (1). , (/1) is <
V+ Ribo Ichikawa's protective film. Said HoX! f film (/
11 +, 1 If the decomposition products of the reactive gas adhere to the partition glass plate (2) and block the light from the light source (1), which j
1) It runs on the surface of the partition glass plate (2) and does not transmit light itself.
(511,’l保護膜(4)を駆動ずろ駆(uJJ機構
、(61、f71はそわぞ第1反応1’l気体の供給あ
るいはD1気するガス・\ラダ、(8)はJ、(:槻、
+41) l!乙の基板(8)を光源(1)に対向して
保持する基板保持材、(10)は基板(8)を成膜ン昂
度に加熱ずろピ タ、(11)は1−記の各構成要素(
1)〜(10)を内蔵ずろ真空容器、(12)はこの真
空¥84器に設けら第1た基板(8)の人、1lll=
1の開閉板、(]3)は真空排気路に設けt二弁、(+
4)は真空ホンプ、(15)は真空容器(I+)内を真
空から大気圧にするリーク弁である。(511,'l Drives the protective film (4) (uJJ mechanism, (61, f71 is the first reaction 1'l gas supply or D1 gas \lada, (8) is J, ( : Tsuki,
+41) l! A substrate holding material that holds the substrate (8) facing the light source (1), (10) a substrate holder that heats the substrate (8) to the desired temperature for film formation, and (11) each of the items listed in 1- Component(
1) to (10) are built-in vacuum containers, (12) is the first board (8) installed in this vacuum container, 1llll=
1 opening/closing plate, (] 3) installed in the vacuum exhaust path, t2 valves, (+
4) is a vacuum pump, and (15) is a leak valve that changes the inside of the vacuum container (I+) from vacuum to atmospheric pressure.
次(Cその動作について説明する。まず、人、出11の
開閉板(12)を開いて基板(8)を保持材(9+−J
二に載せてから開閉板(12)を閉15ろ。次にリーク
弁(15)を閉じて弁(13)を開き、真空ボニ7プ(
14)に1り真空客器(11)内を成膜圧力(例パばI
Torr)に真空υ1気する。その後七 夕0f11
に71、り基板(8)を成膜1Ai1度(例えば280
℃)に加熱するととt)に、+ls unit (II
を点灯して反応f1気体(例えばSi□1]6どN11
.の混合ガス)をガス・−ツタ(15)から供給し、そ
して乙の気体が反応室(3)にm I]てガスヘッダ(
7)より排気される。その結果、基板(8)の光源(1
)に対向する而にM膜(例えばシリコン窒化膜)が光化
学反応により形成される。乙のとき、保護膜(4)の基
板(8)に対向する面上にV)反応生成物が付着(7て
、基板(8)面に到達する光を遮る乙とになるので、保
護膜(4)を矢印(杓の方向に走行させて新17い保3
(を膜を供給し、もって基板(8)面に到達する光の怖
度が低下(7ないようにする。Next (C) The operation will be explained. First, a person opens the opening/closing plate (12) at exit 11 and holds the board (8) with the holding material (9+-J).
2, then close the opening/closing plate (12) (15). Next, close the leak valve (15), open the valve (13), and vacuum bonnet 7 (
14) The film forming pressure (e.g.
Torr) has a vacuum of υ1 qi. Then Tanabata 0f11
71, the substrate (8) is deposited 1Ai 1 degree (for example, 280
℃) and t), +ls unit (II
Turn on the reactant f1 gas (e.g. Si□1]6, N11
.. A mixed gas) is supplied from the gas pipe (15), and the other gas enters the reaction chamber (3) and flows through the gas header (
7) More exhaust. As a result, the light source (1
), an M film (for example, a silicon nitride film) is formed by a photochemical reaction. In the case of (B), the reaction product (V) adheres to the surface of the protective film (4) facing the substrate (8) (7) and blocks the light reaching the surface of the substrate (8), so the protective film Move (4) in the direction of the arrow (ladle) and
(by supplying a film to reduce the fear of light reaching the substrate (8) surface (7).
〔発明が解決(7ようとする問題点〕
従来の薄膜形成装置は以上の、1゛うに構成さflてい
るのて、仕切ガラス板(2)と保j(%膜(4)を近づ
けろと、両者が吸引、密着して保護膜(4)の走行が困
テ1tになる。まl:、成119時間の絆過と共に反応
生成物が保、)((膜(4)にHf1(7て光を遮断ず
ろこととrrす、そのl:めγ1,9膜の形成性能が低
下ずろという問題点があっl:3.乙オ′1に対17て
保5(&膜(4)を仕切ガラス板(ご≧)に吸引、密着
しlrい程度に離すと、反応生成物が仕til+ガラス
板(2)面に、1ねりこんで付着ずろ。そのため前述と
同1; 、1:うな問題があった。[Problem to be solved by the invention (Problem 7)] The conventional thin film forming apparatus is configured as described above in 1. Then, the two are attracted and come into close contact with each other, making it difficult for the protective film (4) to run. However, there is a problem that the formation performance of the γ1,9 film will deteriorate. When it is sucked into the partition glass plate (≧), and then separated by a distance, the reaction product will stick to the partition + glass plate (2) surface by one layer.Therefore, the same as above 1; , 1: There was a problem.
乙の発明は1−記のような問題点を解消するため:?:
なされたものて、保護膜(4)が仕切ガラス板(2)へ
密着ずろために起ころ走行不能や、仕切ガラス板向への
反応生成物の回り込み付着といっl二原因に91、る成
膜不能を防11−するとと?)に、長時間安定した成膜
を可能にずろ薄膜形成装置を得ろことを「1的とする。Party B's invention is to solve the problems listed in 1-:? :
However, the protective film (4) adheres tightly to the partition glass plate (2), resulting in an inability to run, and reaction products wrap around and adhere to the partition glass plate. How to prevent membrane failure 11-? ), the first objective is to obtain a thin film forming apparatus capable of forming films stably over a long period of time.
[問題点を解決ずろための手段]
この発明に係る薄膜形成装置は、仕切ガラス板と保護膜
の間に網[]状の板材を設けろとともに、1宋護膜はn
11記板材の表面を走行する、Fうに17たものである
。[Means for Solving the Problems] The thin film forming apparatus according to the present invention has a structure in which a net [ ]-shaped plate is provided between the partition glass plate and the protective film.
11. This is a sea urchin 17 that runs on the surface of the plate material.
[作用]
乙の発明におけろ網目状の板材はその開口率が大きいの
で、光源1りの)Y、の損失が少なく、かつ効率よく反
応f1気体を分解できる。保に(を膜との接触面積が小
さいので、走行(1(lrcが小さく走行不能にはなら
ない。[Function] In the invention of B, since the mesh-like plate material has a large aperture ratio, the loss of Y of the light source 1 is small and the reaction f1 gas can be decomposed efficiently. Since the contact area with the membrane is small, it does not become impossible to run due to small lrc.
以下、乙の発明の一実施例を図について説明する。第1
図において、(1)〜(15)は第3図に示した従来装
置と同一であり、そ(7て同一の機能を有する。(16
)は網目状の板材で、仕切ガラス板(2)と保護膜(4
)に四挿さiまた状態で設Wl l、である。板材(1
6)は第2図に示ずl:うに開1−1率が大きい(乙の
開口率はエツチング法で約95%のものも実現できろ)
形状である。Hereinafter, one embodiment of the invention of B will be described with reference to the drawings. 1st
In the figure, (1) to (15) are the same as the conventional device shown in FIG. 3, and (7) has the same function. (16)
) is a mesh-like plate material with a partition glass plate (2) and a protective film (4).
) is also set in the state Wl l. Board material (1
6) is not shown in Figure 2. l: The opening ratio of sea urchins is large (the opening ratio of B can be about 95% by the etching method).
It is the shape.
次に、乙の発明に」、り成nりを行う動作は、第3図の
従来装置につい−CAil述したのと同様であるから、
その説明は省略する。Next, regarding the invention of B, the operation for performing the configuration is the same as that described for the conventional device shown in FIG.
The explanation will be omitted.
以上のように、乙の発明によれば、網目状の板材を仕切
ガラス板と保護膜の間に設置することにより、保護膜の
接着による走行不能や仕切ガラス板に反応生成物が付着
することがない。そのt−め、基板1−に到達する光量
が多くなって成膜性能の低下が解消され、しかV)長時
間安定した成膜がnf能な薄11ψ形成装置を得られろ
効果がある。As described above, according to the invention of Party B, by installing the mesh-like plate material between the partition glass plate and the protective film, it is possible to avoid the inability to drive due to adhesion of the protective film and the adhesion of reaction products to the partition glass plate. There is no. On the other hand, the amount of light reaching the substrate 1- increases, eliminating the deterioration in film-forming performance, and V) providing a thin 11ψ-forming device capable of stable film formation over a long period of time.
第1図はこの発明の一実施例による薄膜形成装置の構造
を示す模式図、第2図は第1図に使用さオ]ている網目
状板材の斜視図、第3図は従来の薄膜形成装置の模式図
である。
図中、(1)は光源、(2)は仕切ガラス板、(4)は
保護膜、(5)は化3!1膜の駆動機構、(6)はガス
ヘッダ、(8)(,1基板、(9)は基板保持材、(1
0)はヒータ、(11)は真空客器、(16)は網目状
の板材である。
なお、各図中同一符号は同一または相当部分を示す。
代理人 弁理士 佐 藤 正 年
第1図
第3図
丁 続 hli 正 書(方式ン
昭和61年2月6 ++FIG. 1 is a schematic diagram showing the structure of a thin film forming apparatus according to an embodiment of the present invention, FIG. 2 is a perspective view of a mesh plate used in FIG. 1, and FIG. 3 is a conventional thin film forming apparatus. FIG. 2 is a schematic diagram of the device. In the figure, (1) is a light source, (2) is a partition glass plate, (4) is a protective film, (5) is a drive mechanism for chemical 3!1 film, (6) is a gas header, (8) (,1 substrate , (9) is the substrate holding material, (1
0) is a heater, (11) is a vacuum chamber, and (16) is a mesh plate. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Patent Attorney Tadashi Sato Figure 1, Figure 3, continuation hli Author (formula, February 6, 1986) ++
Claims (1)
る光源と、該反応室と光源を分離する仕切ガラス板と、
前記反応性気体を供給しそして排気するガスヘッダと、
基板保持板と、基盤を成膜温度に加熱するヒータと、前
記仕切ガラス板を成膜時のくもりから保護する保護膜と
、該保護膜の走行機構と上記各構成要素とを内蔵する真
空容器からなる薄膜形成装置において、前記仕切ガラス
板と保護膜との間に網目状の板材を設けたことを特徴と
する薄膜形成装置。(1) A light source that decomposes reactive gas in a reaction chamber by photochemical reaction, and a partition glass plate that separates the reaction chamber and the light source;
a gas header for supplying and exhausting the reactive gas;
A vacuum container containing a substrate holding plate, a heater that heats the substrate to a film forming temperature, a protective film that protects the partition glass plate from fogging during film forming, a traveling mechanism for the protective film, and each of the above components. 1. A thin film forming apparatus comprising: a mesh-like plate material provided between the partition glass plate and the protective film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23953785A JPS6299475A (en) | 1985-10-28 | 1985-10-28 | Thin film forming device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23953785A JPS6299475A (en) | 1985-10-28 | 1985-10-28 | Thin film forming device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6299475A true JPS6299475A (en) | 1987-05-08 |
Family
ID=17046283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23953785A Pending JPS6299475A (en) | 1985-10-28 | 1985-10-28 | Thin film forming device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6299475A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01214115A (en) * | 1988-02-23 | 1989-08-28 | Mitsubishi Electric Corp | Semiconductor manufacturing device |
JP2015086417A (en) * | 2013-10-29 | 2015-05-07 | 株式会社 セルバック | Inductively-coupled plasma cvd apparatus |
-
1985
- 1985-10-28 JP JP23953785A patent/JPS6299475A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01214115A (en) * | 1988-02-23 | 1989-08-28 | Mitsubishi Electric Corp | Semiconductor manufacturing device |
JP2015086417A (en) * | 2013-10-29 | 2015-05-07 | 株式会社 セルバック | Inductively-coupled plasma cvd apparatus |
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