JP2006117999A - Thin film forming method and thin film forming device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin film forming method and a device therefor where, as the material to be treated such as a cable, a belt and a columnar material is moved to the longitudinal direction, a thick thin film with a thickness of ≥2 μm can be formed on the surface thereof. <P>SOLUTION: A cylindrical sputtering system 4 is constituted so that as one electrode, a tubular material 1 in which the length in the axial direction is longer than the diameter by ≥2 times is used, and, as the other electrode, the long-length material 2 to be treated such as a cable, a belt and a columnar material it self is used. The cylindrical sputtering system or the same and a diode planar type sputtering system are arranged by two or more in total, plasma is generated between the respective electrodes in the two or more sputtering systems, each material to be treated is successively passed inside the plasma to the longitudinal direction, and various thin films of metal, a semiconductor, an insulator or the like are formed on the surface of each material 2 to be treated. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  In the present invention, a thin film is produced by a sputtering apparatus using plasma while moving the material to be treated in the longitudinal direction with respect to all or a part of the surface of a long material to be treated such as a cable, a band, and a columnar material. It relates to a method and a device. The thin film production described here refers to the formation of various thin films such as metals, semiconductors, and insulators by a sputtering apparatus.

  In the method and apparatus of the present invention, surface treatment using plasma can be used in combination. The surface treatment here means ion etching, nitriding treatment, oxidation, carburizing treatment, and the like.

  Generally, a coaxial cable used for a medical device, an electronic information device, or the like has an insulating layer and a shield layer on the outer periphery of a central conductor. Conventionally, in manufacturing such a coaxial cable, for a cable as a wire (for example, a cable core having a structure having a first insulating layer and a second insulating layer on the outer periphery of a central conductor), as a shield layer on the surface thereof, A conductive thin film having strong adhesion is uniformly provided on the entire periphery. Depending on the type of cable, it is desirable to provide such a conductive thin film or insulating thin film as thick as possible. For example, it may be desired that the conductive thin film is formed so as to be thick enough to be processed later such as rolling and drawing.

  As a technique for providing a conductive thin film with strong adhesion uniformly over the entire outer periphery of the wire, there is a coaxial wire manufacturing technique disclosed in, for example, Japanese Patent Laid-Open No. 5-342930 (Patent Document 1). That is, in this patent document 1, in order to provide a thin film uniformly on the entire outer periphery of a wire, plasma discharge is generated between a copper wire (wire) on which a fluororesin coating is formed and a copper sputter target, thereby forming a ring-shaped copper. The copper wire on which the fluororesin coating is formed is moved along the axial direction in the center of the sputter target to form a copper thin film on the fluororesin coating surface. Moreover, in this patent document 1, in order to provide a thin film thickly in the whole outer periphery of a wire, a metal film is formed by the electroplating method on the metal film formed by said sputtering method.

  Further, Patent Document 1 also discloses a structure of a plasma generator, and a sputtering target is constituted by a ring-shaped metal copper plate, a ring-shaped N-pole magnetic body, and a S-pole magnetic body. A ring-shaped N-pole magnetic body and S-pole magnetic body are attached to a metal copper plate at a predetermined interval.

  A plasma generator having a structure in which electrodes made of a conductor such as metal are concentrically arranged and an alternating electric field is applied to the center electrode to generate plasma is disclosed in Japanese Patent Application Laid-Open No. 7-2111654. (Patent Document 2).

  By the way, if a plasma jet furnace capable of annealing the cable, band, and columnar material is used, it is possible to perform plasma annealing or ion etching, oxidation, nitriding, and carburizing while moving the cable, band, and columnar material in the longitudinal direction. It is. However, various thin films such as metals, insulators, and semiconductors cannot be produced by sputtering.

  Sputtering is an excellent thin film production technique that can produce a wide variety of thin films on any substrate. Compared with vapor deposition, electrolytic plating, and electroless plating, a film having a higher adhesion can be produced, and this method is suitable for producing a thin film that requires a long bending life and high wear resistance. Moreover, it is relatively easy to produce a film on the surface not facing the target because of the effect of the sputtered atoms.

Vapor deposition, electrolytic plating, and electroless plating are cheaper apparatuses than sputtering, and a thin film can be formed in a short time. However, the adhesion is poor compared to a film produced by sputtering.
JP-A-5-342930 (paragraph number 0008, FIG. 2, FIG. 3) JP 7-2111654 A

  As described above, if a plasma jet furnace capable of running and annealing cables, strips, and columnar materials is used, plasma annealing and ion etching, oxidation, nitriding, and carburizing are possible, but sputtering, various thin films such as metals, insulators, and semiconductors can be used. It cannot be made.

  On the other hand, a film produced by vapor deposition or plating has poor adhesion compared to a film produced by sputtering. When a long bending life and high wear resistance are required, a film produced by vapor deposition or plating is unsuitable because peeling or cracking is likely to occur compared to a film produced by sputtering. In vapor deposition, it is difficult to produce a uniform thin film on the entire surface of the cable, band, and columnar material.

  Sputtering, on the other hand, is an excellent thin film production technology that can produce a wide variety of thin films on any substrate. Compared with vapor deposition, electrolytic plating, and electroless plating, it can produce a film with stronger adhesion, and has a long flex life and high life. This method is suitable for the production of thin films that require wear resistance. Moreover, it is relatively easy to produce a film on the surface not facing the target because of the effect of the sputtered atoms.

  However, since the production of a thin film by sputtering generally takes a longer time than plating or vapor deposition, it is difficult to produce a thin film by sputtering while moving cables, strips, and columnar members in the longitudinal direction.

  According to the method of Patent Document 1, plasma discharge is generated between a copper wire (wire) on which a fluororesin coating is formed and a copper sputter target, and the wire is moved along the axial direction at the center of the copper sputter target. Thus, since the copper thin film is formed on the surface of the fluororesin coating, it is possible to provide the thin film uniformly on the entire outer periphery of the wire. However, the sputtering apparatus is essentially difficult to form a thin film over the entire outer periphery of the wire even with the sputtering apparatus as in Patent Document 1, and therefore, as disclosed in Patent Document 1, It is essential to form a metal film (10 to 50 μm) by electroplating on a metal film (0.02 to 1 μm) formed by the sputtering method.

  Therefore, the object of the present invention is to solve the above-mentioned problems and to have a film having a high adhesiveness equivalent to a film produced by ordinary sputtering while moving a material to be treated such as a cable, a band, a columnar material in the longitudinal direction. And a thin film manufacturing method and apparatus capable of manufacturing a thin film having a thickness of 2 μm or more on the surface of the material to be processed while moving the material to be processed in the longitudinal direction. is there.

  In order to achieve the above object, the present invention is configured as follows.

  The thin film manufacturing method according to the invention of claim 1 is a thin film manufacturing method in which plasma is generated and sputtered by applying a high frequency, an alternating voltage or the like between electrodes, and the axial length is 2 rather than the diameter. A tubular sputtering apparatus comprising a tubular material longer than double as one electrode and the other electrode as a long material to be treated such as a cable, a band, a columnar material passing through the tubular material, and the like A plasma discharge is generated by applying an AC voltage, a high frequency, or a DC voltage between the electrodes of the sputter apparatus, and a metal, semiconductor, insulator, etc. by sputtering is applied to all or a part of the surface of the material to be processed. It is characterized by producing various thin films.

  In the method of the present invention, surface treatment such as nitriding, oxidation, carburizing, ion etching using plasma can be used in combination.

  According to a second aspect of the present invention, there is provided a thin film manufacturing method in which a tubular material is used as one electrode, and the other electrode is a long material to be processed such as a cable, a band, or a columnar material that passes through the tubular material. A plurality of cylindrical sputtering devices are arranged, or two or more of the cylindrical sputtering devices and a sputtering device having another structure such as a bipolar plate type are arranged in total. A plasma is generated by applying a high frequency, an alternating voltage or the like between the electrodes of the two or more sputtering apparatuses, and the plasma of the two or more sputtering apparatuses has a long length such as a cable, a band, a columnar material, or the like. The materials to be treated are sequentially passed in the longitudinal direction, and various thin films such as metals, semiconductors, and insulators are formed by sputtering on the whole or a part of the surface of the materials to be treated.

  In the method of the present invention, a surface treatment such as nitridation, oxidation, carburization, ion etching, and the like, which are performed using plasma, can be used in combination.

  According to a third aspect of the present invention, in the thin film manufacturing method according to the first or second aspect, a second film forming apparatus for performing plating, vapor deposition, or the like is added downstream of the sputtering apparatus as viewed in the passing direction of the material to be processed. Then, a second thin film production process for forming a thin film on the thin film produced by sputtering is performed while moving the material to be treated in the longitudinal direction.

  According to a fourth aspect of the present invention, there is provided the thin film manufacturing method according to the first, second, or third aspect, wherein a rolling mill is disposed downstream of the sputtering apparatus or downstream of the second film forming apparatus as viewed in the direction in which the material to be processed passes. Further, a processing apparatus such as a wire drawing machine and a drawing machine is added, and thin film production, surface treatment, plastic working, and the like are performed while moving the material to be processed in the longitudinal direction.

  The thin film production apparatus according to the invention of claim 5 is a cylinder in which the tubular material is one electrode and the other electrode is a long material to be treated such as a cable, a band, a columnar material, etc., passing through the tubular material. A plurality of cylindrical sputtering devices are arranged, or one or more cylindrical sputtering devices and two or more sputtering devices having other structures such as a bipolar plate type are arranged in total. A means for generating a plasma by applying a high frequency, an alternating voltage or the like between the electrodes of the two or more sputtering apparatuses, and the long material to be processed in the plasma of the two or more sputtering apparatuses. A feed means for sequentially passing in the longitudinal direction, and it is configured to produce various thin films such as metal, semiconductor, insulator, etc. by sputtering on all or part of the surface of the material to be treated. When That.

  In the thin film production apparatus of the present invention, a surface treatment apparatus such as nitridation, oxidation, carburization, ion etching, etc., which is performed using plasma, or a treatment apparatus that performs annealing, etc. is arranged before or after the sputtering apparatus or between the sputtering apparatuses. It is also possible to arrange and use them together.

  The invention of claim 6 is the thin film production apparatus according to claim 5, wherein a second film forming apparatus for performing plating, vapor deposition, etc. is added downstream of the sputtering apparatus as viewed in the direction of passage of the material to be processed. It is characterized by.

  A seventh aspect of the present invention is the thin film production apparatus according to the fifth or sixth aspect, wherein a rolling mill and a stretcher are disposed downstream of the sputtering apparatus or downstream of the second film forming apparatus as viewed in the direction of passage of the material to be processed. It is characterized by the addition of processing equipment such as wire machines and drawing machines.

  The invention according to claim 8 is the thin film manufacturing apparatus according to claim 5, 6 or 7, wherein a guide capable of changing the direction of rotation and advancing of the material to be processed is installed in the middle of the passage of the material to be processed. It is characterized by that. The present invention includes a form in which the second film forming apparatus, the processing apparatus, the guide, and the winder are all provided in the same vacuum bell jar as the sputtering apparatus.

<Key points of the invention>
In a device for generating plasma by applying a direct current, a high frequency, an alternating voltage, etc. between two electrodes as a device for uniformly producing a thin film around the entire circumference of a cable, a cylindrical material, etc. A sputtering apparatus is fabricated using the target side electrode and the cable and columnar material as the other electrode. With this configuration, a uniform thin film can be produced around the entire periphery of the cable, columnar material, or the like.

  Next, in order to produce a thick film by sputtering while moving a long object to be processed such as a cable, a band, and a columnar material in the longitudinal direction, it is necessary to pass through a plasma generation space where a sputtering phenomenon occurs for a long time. In the present invention, by making the tubular material serving as the target-side electrode long in the longitudinal direction, it is possible to create a plasma generation space that is long in the longitudinal direction and perform sputtering of a thick film. .

  In the present invention, in order to create a plasma generation space that is long in the longitudinal direction, one or more plasma generators are arranged and moved therethrough to increase the time during which the cable and strip are exposed to the plasma. Fabrication is performed thickly (claim 2). The plasma generator may be the one shown in the first aspect, or the other device (for example, a bipolar plate type sputtering device). The plasma generation mechanisms may be different from each other, and the sputtering may be direct current sputtering, alternating current, high frequency, or magnetron sputtering. All of the plurality of plasma generators may be configured to have a role of surface treatment or the like instead of performing thin film formation by sputtering.

  In the present invention, a guide is arranged in a chamber (bell jar) including a plasma generator (Claim 8), the cable and the band, and the direction of the columnar member can be changed and rotated. The belt and columnar material can pass through. In addition, the cable, the band, and the columnar material can be rotated around the longitudinal direction as well as the cable, the band, and the columnar material using the guide. The change in orientation made it possible to produce a more uniform thin film around the entire circumference of the cable, band, and columnar material.

  In the present invention, an apparatus capable of plating or vapor deposition is added to the above-described plasma generator, and the first film formed by sputtering while moving the cable, the band, and the columnar material in the longitudinal direction, or, By producing the second film by vapor deposition, it is possible to produce a thick film in a shorter time than when the film is formed by sputtering alone (claims 3 and 6). Since the surface in contact with the cable, band, and columnar material is a thin film produced by the collision of atoms with high energy due to the sputtering phenomenon, the cable, band, columnar material is less than the film produced only by plating or vapor deposition. Adhesion to is high and peeling is difficult to occur. In addition, it is possible to produce a uniform film over the entire surface by disposing the guide between the devices and rotating the cable, the band, and the columnar material between these devices.

  In the present invention, by adding a processing device such as a rolling mill, a wire drawing machine, and a drawing machine, it is possible to perform processing using these devices in a series of longitudinal movements of cables, strips, and columnar materials. (Claims 4 and 7).

  The present invention includes a form in which the second film forming apparatus, the processing apparatus, the guide, and the winder are all provided in the same vacuum bell jar as the sputtering apparatus. In other words, by placing the winder in the same vacuum bell jar as the plasma generator, the adhesion of impurities to the cable, band, and columnar material can be reduced more than before, thereby stabilizing the thin film Fabrication, surface treatment, etc. are possible. Further, if necessary, plating, vapor deposition apparatus, rolling mill, wire drawing machine, etc. can be placed in the same vacuum bell jar, thereby enabling processing in a stable environment.

  According to the present invention, the following excellent effects can be obtained.

  According to the first aspect of the present invention, since the tubular sputtering apparatus is configured by using a tubular material whose axial length is at least twice as long as the diameter as one electrode, the axial length as in Patent Document 1 is established. Compared to the case of using a ring-shaped sputtering apparatus whose length is shorter than the diameter, a thicker film (for example, 2 μm or more) can be formed while moving a long object to be processed such as a cable, a band, and a columnar material in the longitudinal direction. It has become possible to produce all or part of the surface of the treatment material. In addition, long materials such as cables, belts, and columnar materials pass through the tubular material, so a thin film with high adhesion is efficiently produced uniformly around the cables, belts, and columnar materials by sputtering. can do.

  In addition, according to the inventions of claims 2 and 5, the tubular material is one electrode, and the other electrode is a long material to be treated such as a cable, a band, a columnar material or the like passing through the tubular material. A cylindrical sputtering apparatus is configured, and a plurality of the cylindrical sputtering apparatuses are arranged, or two or more of the cylindrical sputtering apparatuses and a sputtering apparatus having another structure such as a bipolar plate type are arranged in total. Therefore, by passing through these sputtering devices, a thicker film (for example, 2 μm or more) than the case of using only one ring-shaped sputtering device of Patent Document 1 or the above-described cylindrical sputtering device is applied. It has become possible to produce all or part of the surface of the treatment material. In addition, long materials such as cables, belts, and columnar materials pass through the tubular material, so a thin film with high adhesion is efficiently produced uniformly around the cables, belts, and columnar materials by sputtering. can do.

  Further, according to the inventions of claims 3 and 6, a thick film can be produced by plating and vapor-depositing the surface of the cable, band, and columnar material on which a thin film has been produced by sputtering.

  Further, according to the inventions of claims 4 and 7, by combining with a rolling mill, a wire drawing machine, and a drawing machine, the production of the film on the cable and the strip, the columnar material and the processing such as rolling, drawing, etc. are performed in a series of longitudinal directions. It became possible to do it while moving in the direction.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 2 shows the configuration of the thin film manufacturing apparatus according to this embodiment. In the vacuum bell jar 3, one or more (here, four) cylindrical sputtering apparatuses 4 are juxtaposed, and winding machines 5 a and 5 b as feeding means 5 are arranged on both sides thereof. A long object 2 such as a cable, a belt, or a columnar material fed out from one winding machine 5a passes through the four cylindrical sputtering devices 4 in a zigzag manner while being guided by a guide 6. It is configured to be sent in the longitudinal direction and wound around the other winding machine 5b.

  The cylindrical sputtering device 4 is a device that generates plasma and performs sputtering. As shown in FIG. 1, the cylindrical sputtering device 4 has a tubular material 1 having an axial length L that is twice or more longer than a diameter D. A long workpiece 2 such as the cable, band, or columnar material passes through the center in the axial direction.

  At least the inside of the tubular material 1 of the cylindrical sputtering apparatus 4 is made of a target material for producing a thin film of a desired material, for example, copper. That is, although the tubular material 1 in FIG. 1 is composed entirely of the target material, the tubular material 1 is not limited to such a structure, and the inside of the tubular material 1 only needs to be the target material. Therefore, you may use what plated the inner side of the pipe | tube with the target material.

  The tubular sputtering apparatus 4 includes a tubular material 1, that is, the target side as one electrode, and the other electrode 2 as a long object 2 itself such as a cable, a band, or a columnar material that passes through the tubular material 1. As described above, an AC voltage, a radio frequency (RF), or a direct current (DC) voltage is applied between the two electrodes, and plasma discharge is generated. In the production of the metal layer, a sputtering method such as a DC magnetron sputtering method, an RF magnetron sputtering method, or an ion beam sputtering method is used. When the insulator is a target, RF magnetron sputtering is preferably used.

  In this embodiment, the plasma is generated by high frequency. However, the method for generating plasma need not be limited to a high frequency, and may be alternating current or direct current.

  A long processed material 2 such as a cable, a band, or a columnar material passes through the plasma of the tubular material 1, thereby producing a copper metal sputtered thin film while moving in the longitudinal direction. Here, in the long processed material 2 such as a cable and a columnar material, a thin film by sputtering is uniformly formed on the entire periphery thereof, and is thicker than a conventional ring-shaped sputtering apparatus, that is, a film thickness sufficient as a shield layer. It is made with.

  In the above, since the tubular material 1 and the material to be treated 2 function as electrodes, some or all of them must be made of a conductive material such as copper or stainless steel.

  In the embodiment of FIG. 2, four cylindrical sputtering devices 4 capable of generating plasma by applying direct current, high frequency, and alternating voltage are arranged, and a long object to be processed which is a cable, a band, and a columnar material. Surface treatment and thin film production are performed while moving in the longitudinal direction through 2. For this reason, even when a conventional ring-shaped sputtering apparatus (see Patent Document 1) or only one cylindrical sputtering apparatus is used, even if a metal sputtered thin film having a sufficient thickness as a shield layer cannot be obtained, a thicker film is obtained. Can be produced on all or part of the surface of the material 2 to be treated.

  In the above embodiment, the same cylindrical sputtering apparatus 4 shown in FIG. 1 is arranged four, but the sputtering apparatus to be arranged may be the one shown in FIG. 1 or may be omitted. For example, a configuration in which one or more cylindrical sputtering apparatuses 4 and two or more bipolar flat-plate type sputtering apparatuses are arranged in total is also possible.

  The cylindrical sputtering devices 4 do not have to be the same type of plasma generator, and the work to be performed may be different, such as surface treatment and thin film production. That is, since it is a plasma generator, there is no change, and a plasma generator that functions as a sputtering device and a plasma generator that performs other surface treatment, thin film production, etc. (for example, surface modification by ion bombardment, surface It is also possible to combine it with a treatment such as washing.

  Furthermore, the arrangement of the plasma generators functioning as the cylindrical sputtering apparatus 4 or the like is not limited to the arrangement in FIG.

  As the feeding means 5 for the long processed material 2 such as a cable, a band, and a columnar material, winding machines 5a and 5b capable of moving the cable, the band, and the columnar material in the longitudinal direction are provided. However, it may be performed by other means. In addition, a guide 6 capable of changing the orientation of the cable, the band, and the columnar material is installed between each plasma generator (cylindrical sputtering apparatus 4). The guide 6 includes a cable, a band, and a columnar shape. The thing of the structure which can rotate the to-be-processed material 2 centering on not only the advancing direction of the long to-be-processed material 2 but a longitudinal direction is used.

  FIG. 3 shows another embodiment of the present invention (related to claims 3, 4, 6, and 7). This is achieved by adding a second film forming apparatus 7 for performing plating, vapor deposition and the like downstream of the cylindrical sputtering apparatus 4 as viewed in the direction of passage of the workpiece 2, and further rolling downstream of the second film forming apparatus 7. This is an example in which a processing device 8 such as a machine, a wire drawing machine, or a drawing machine is added. The second film forming apparatus 7 for performing plating and vapor deposition, and the processing apparatus 8 such as a rolling mill, a wire drawing machine, and a drawing machine are arranged as shown in FIG. The second film forming apparatus 7 forms a thicker film on the surface of the material 2 to be processed such as a cable, a band, and a columnar material, and is thinned by a processing apparatus 8 such as a rolling mill, a wire drawing machine, and a drawing machine. Alternatively, it can be processed thinly.

  These second film forming apparatus for performing plating and vapor deposition, processing apparatuses such as a rolling mill, a wire drawing machine, and a drawing machine, and a winder are also placed in a vacuum bell jar for forming a film with the cylindrical sputtering apparatus 4. Thus, it is possible to perform these processes with a small amount of impurities.

It is sectional drawing which shows the principal part of the cylindrical sputtering device (plasma generator) used by embodiment of this invention. It is a figure which shows the outline | summary of the thin film preparation apparatus which concerns on embodiment of this invention. It is a figure which shows the outline | summary of the thin film preparation apparatus concerning other embodiment of this invention.

Explanation of symbols

1 Tubular material 2 Long material to be treated (cable, belt, columnar material)
3 Vacuum bell jar 4 Cylindrical sputtering equipment (plasma generator)
DESCRIPTION OF SYMBOLS 5 Feed means 5a Winding machine 5b Winding machine 6 Guide 7 2nd film forming apparatus (plating apparatus or vapor deposition apparatus)
8 Processing equipment (drawing machine)

Claims (8)

In a thin film manufacturing method in which plasma is generated and sputtered by applying high frequency, alternating voltage, etc. between electrodes,
A tubular material whose axial length is two or more times longer than the diameter is one electrode, and the other electrode itself is a long material to be treated such as a cable, a band, or a columnar material that passes through the tubular material. A cylindrical sputtering apparatus that
A plasma discharge is generated by applying an AC voltage, a high frequency, or a DC voltage between the electrodes of the cylindrical sputtering apparatus, and a metal, a semiconductor, or an insulator by sputtering is applied to all or a part of the surface of the material to be processed. A method for producing a thin film characterized by producing various thin films such as A tubular sputtering apparatus is configured with a tubular material as one electrode and the other electrode as a long material to be treated such as a cable, a band, and a columnar material passing through the tubular material,
A plurality of cylindrical sputtering devices are arranged, or two or more of the cylindrical sputtering devices and a sputtering device of another structure such as a bipolar plate type are arranged in total,
Plasma is generated by applying a high frequency, an alternating voltage, etc. between the respective electrodes of these two or more sputtering devices, and the plasma of these two or more sputtering devices is formed into a long cable, strip, columnar material, or the like. Thin film fabrication characterized in that a material to be treated is sequentially passed in the longitudinal direction and various thin films such as metals, semiconductors, insulators, etc. are produced by sputtering on all or part of the surface of the material to be treated. Method. In the thin film production method according to claim 1 or 2,
A second thin film is formed by adding a second film forming apparatus for performing plating, vapor deposition, etc. downstream of the sputtering apparatus as viewed in the direction of passage of the material to be processed, and further forming a thin film on the thin film formed by the sputtering. A method for producing a thin film, wherein the treatment is performed while moving the material to be treated in the longitudinal direction. In the thin film production method according to claim 1, 2, or 3,
A processing apparatus such as a rolling mill, a wire drawing machine, and a drawing machine is added downstream of the sputtering apparatus or downstream of the second film forming apparatus as seen in the direction of passage of the material to be processed. A thin film manufacturing method characterized by performing plastic working or the like while moving the material to be processed in the longitudinal direction. A tubular sputtering apparatus is configured with a tubular material as one electrode and the other electrode as a long material to be treated such as a cable, a band, and a columnar material passing through the tubular material,
A plurality of cylindrical sputtering devices are arranged, or two or more of the cylindrical sputtering devices and a sputtering device of another structure such as a bipolar plate type are arranged in total,
Means for generating plasma by applying a high frequency, an alternating voltage or the like between the electrodes of the two or more sputtering devices;
In the plasma of the two or more sputtering devices, a feed means for sequentially passing the long material to be processed in the longitudinal direction,
A thin film production apparatus characterized in that various thin films such as metals, semiconductors, and insulators are produced by sputtering on all or a part of the surface of the material to be treated. The thin film manufacturing apparatus according to claim 5,
A thin film manufacturing apparatus, wherein a second film forming apparatus for performing plating, vapor deposition and the like is added downstream of the sputtering apparatus as viewed in the direction of passage of the material to be processed. In the thin film production apparatus according to claim 5 or 6,
A thin film production apparatus characterized in that a processing apparatus such as a rolling mill, a wire drawing machine, and a drawing machine is added downstream of the sputtering apparatus or downstream of the second film forming apparatus as viewed in the direction of passage of the material to be processed. . In the thin film production apparatus according to claim 5, 6 or 7,
A thin film manufacturing apparatus, characterized in that a guide capable of rotating and changing the traveling direction of the material to be processed is installed in the middle of the passage of the material to be processed.

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