JP2018206824A - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
- Publication number
- JP2018206824A JP2018206824A JP2017107347A JP2017107347A JP2018206824A JP 2018206824 A JP2018206824 A JP 2018206824A JP 2017107347 A JP2017107347 A JP 2017107347A JP 2017107347 A JP2017107347 A JP 2017107347A JP 2018206824 A JP2018206824 A JP 2018206824A
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- Prior art keywords
- wafer
- protective tape
- tape
- grinding
- outer peripheral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003672 processing method Methods 0.000 title claims description 13
- 230000001681 protective effect Effects 0.000 claims abstract description 91
- 238000005520 cutting process Methods 0.000 claims abstract description 40
- 230000002093 peripheral effect Effects 0.000 claims abstract description 35
- 239000002390 adhesive tape Substances 0.000 claims abstract description 20
- 238000012546 transfer Methods 0.000 claims abstract description 18
- 238000009966 trimming Methods 0.000 claims description 24
- 238000012545 processing Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Description
14 切削ブレード(加工手段)
20 研削装置
22 チャックテーブル
B テープバリ
T 保護テープ
Tp 粘着テープ
W ウェーハ
Wa 表面
Wb 裏面
Wc 面取り部
Claims (2)
- 外周縁に面取り部を有し表面に複数のデバイスが形成されたウェーハの加工方法であって、
表面側に保護テープを貼着する保護テープ貼着ステップと、
切削ブレードを該保護テープ側からウェーハの外周縁に切り込ませつつウェーハを回転させて、該保護テープ及びウェーハ表面側の面取り部を円形に切削除去するトリミングステップと、
該トリミングステップを実施した後に、該保護テープを加工した際に加工エッジに発生する上方へ延びるテープバリの根本に加工手段の先端を位置付けてウェーハを回転させて、該テープバリを切削除去するバリ除去ステップと、
該バリ除去ステップを実施した後に、該保護テープ側を研削装置のチャックテーブルに保持し、ウェーハの裏面を研削する研削ステップと、
該研削ステップを実施した後に、該研削後のウェーハ裏面に別の粘着テープを貼着して該保護テープを剥離して転写を行う転写ステップと、
を備えるウェーハの加工方法。 - 該バリ除去ステップにおいては、該加工手段として該トリミングステップで使用する切削ブレードを用いて行うこと、を特徴とする請求項1記載のウェーハの加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017107347A JP6887313B2 (ja) | 2017-05-31 | 2017-05-31 | ウェーハの加工方法 |
KR1020180052592A KR102436342B1 (ko) | 2017-05-31 | 2018-05-08 | 웨이퍼의 가공 방법 |
CN201810505382.1A CN108987268A (zh) | 2017-05-31 | 2018-05-24 | 晶片的加工方法 |
TW107118264A TWI759491B (zh) | 2017-05-31 | 2018-05-29 | 晶圓加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017107347A JP6887313B2 (ja) | 2017-05-31 | 2017-05-31 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018206824A true JP2018206824A (ja) | 2018-12-27 |
JP6887313B2 JP6887313B2 (ja) | 2021-06-16 |
Family
ID=64542654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017107347A Active JP6887313B2 (ja) | 2017-05-31 | 2017-05-31 | ウェーハの加工方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6887313B2 (ja) |
KR (1) | KR102436342B1 (ja) |
CN (1) | CN108987268A (ja) |
TW (1) | TWI759491B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7450460B2 (ja) | 2020-06-08 | 2024-03-15 | 株式会社ディスコ | ウェーハの加工方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020189568A1 (ja) * | 2019-03-15 | 2020-09-24 | リンテック株式会社 | 粘着シート及び半導体装置の製造方法 |
CN109950267B (zh) * | 2019-03-26 | 2021-03-30 | 德淮半导体有限公司 | 图像传感器的制作方法 |
US11670524B2 (en) | 2020-01-31 | 2023-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fully automated wafer debonding system and method thereof |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008288237A (ja) * | 2007-05-15 | 2008-11-27 | Lintec Corp | シート貼付装置、シート切断方法及びウエハ研削方法 |
JP2008300521A (ja) * | 2007-05-30 | 2008-12-11 | Disco Abrasive Syst Ltd | 半導体ウェーハおよびその加工方法 |
JP2010123823A (ja) * | 2008-11-21 | 2010-06-03 | Disco Abrasive Syst Ltd | 切削装置 |
JP2010123603A (ja) * | 2008-11-17 | 2010-06-03 | Disco Abrasive Syst Ltd | 切削方法 |
JP2011124266A (ja) * | 2009-12-08 | 2011-06-23 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2012043825A (ja) * | 2010-08-12 | 2012-03-01 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2012074545A (ja) * | 2010-09-29 | 2012-04-12 | Okamoto Machine Tool Works Ltd | 保護フィルム貼付半導体基板の裏面研削方法 |
JP2013125872A (ja) * | 2011-12-15 | 2013-06-24 | Disco Abrasive Syst Ltd | バイト切削装置 |
JP2013197434A (ja) * | 2012-03-22 | 2013-09-30 | Elpida Memory Inc | 半導体装置の製造方法 |
JP2013247135A (ja) * | 2012-05-23 | 2013-12-09 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2015217461A (ja) * | 2014-05-16 | 2015-12-07 | 株式会社ディスコ | ウェーハの加工方法 |
JP2018092963A (ja) * | 2016-11-30 | 2018-06-14 | 株式会社ディスコ | ウェーハの加工方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4394210B2 (ja) * | 1999-09-08 | 2010-01-06 | 株式会社ディスコ | 切削方法 |
JP4540421B2 (ja) * | 2004-07-28 | 2010-09-08 | 株式会社ディスコ | ダイシング方法 |
JP2008130886A (ja) * | 2006-11-22 | 2008-06-05 | Casio Comput Co Ltd | 半導体装置の製造方法 |
JP4944642B2 (ja) * | 2007-03-09 | 2012-06-06 | 株式会社ディスコ | デバイスの製造方法 |
JP2016157892A (ja) * | 2015-02-26 | 2016-09-01 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016162809A (ja) * | 2015-02-27 | 2016-09-05 | 株式会社ディスコ | ウエーハの加工方法 |
-
2017
- 2017-05-31 JP JP2017107347A patent/JP6887313B2/ja active Active
-
2018
- 2018-05-08 KR KR1020180052592A patent/KR102436342B1/ko active IP Right Grant
- 2018-05-24 CN CN201810505382.1A patent/CN108987268A/zh active Pending
- 2018-05-29 TW TW107118264A patent/TWI759491B/zh active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008288237A (ja) * | 2007-05-15 | 2008-11-27 | Lintec Corp | シート貼付装置、シート切断方法及びウエハ研削方法 |
JP2008300521A (ja) * | 2007-05-30 | 2008-12-11 | Disco Abrasive Syst Ltd | 半導体ウェーハおよびその加工方法 |
JP2010123603A (ja) * | 2008-11-17 | 2010-06-03 | Disco Abrasive Syst Ltd | 切削方法 |
JP2010123823A (ja) * | 2008-11-21 | 2010-06-03 | Disco Abrasive Syst Ltd | 切削装置 |
JP2011124266A (ja) * | 2009-12-08 | 2011-06-23 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2012043825A (ja) * | 2010-08-12 | 2012-03-01 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2012074545A (ja) * | 2010-09-29 | 2012-04-12 | Okamoto Machine Tool Works Ltd | 保護フィルム貼付半導体基板の裏面研削方法 |
JP2013125872A (ja) * | 2011-12-15 | 2013-06-24 | Disco Abrasive Syst Ltd | バイト切削装置 |
JP2013197434A (ja) * | 2012-03-22 | 2013-09-30 | Elpida Memory Inc | 半導体装置の製造方法 |
JP2013247135A (ja) * | 2012-05-23 | 2013-12-09 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2015217461A (ja) * | 2014-05-16 | 2015-12-07 | 株式会社ディスコ | ウェーハの加工方法 |
JP2018092963A (ja) * | 2016-11-30 | 2018-06-14 | 株式会社ディスコ | ウェーハの加工方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7450460B2 (ja) | 2020-06-08 | 2024-03-15 | 株式会社ディスコ | ウェーハの加工方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI759491B (zh) | 2022-04-01 |
JP6887313B2 (ja) | 2021-06-16 |
KR20180131389A (ko) | 2018-12-10 |
CN108987268A (zh) | 2018-12-11 |
KR102436342B1 (ko) | 2022-08-24 |
TW201903881A (zh) | 2019-01-16 |
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