JP2018206363A - 基準電圧回路及び半導体装置 - Google Patents
基準電圧回路及び半導体装置 Download PDFInfo
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- JP2018206363A JP2018206363A JP2018060317A JP2018060317A JP2018206363A JP 2018206363 A JP2018206363 A JP 2018206363A JP 2018060317 A JP2018060317 A JP 2018060317A JP 2018060317 A JP2018060317 A JP 2018060317A JP 2018206363 A JP2018206363 A JP 2018206363A
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- reference voltage
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/265—Current mirrors using bipolar transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
Abstract
Description
例えば、トランジスタ710とトランジスタ720がx軸方向に配置された半導体装置が樹脂封入されたときに、x軸方向に応力が掛かると、トランジスタ710とトランジスタ720の特性変動にズレが生じる可能性がある。即ち、特性801と特性802は、所望の特性からズレが生じる可能性がある。
基準電圧回路100は、デプレッション型のトランジスタ110と、エンハンスメント型のトランジスタ120と、基準電圧VREFを出力する端子130とを備えている。
即ち、トランジスタ111、112、121、122は、点対称に配置して、コモンセントロイド(共通重心)を実現している。
基準電圧回路200は、デプレッション型のトランジスタ210とエンハンスメント型のトランジスタ220とを、夫々3個のトランジスタで構成した。
基準電圧回路400は、デプレッション型のトランジスタ410とエンハンスメント型のトランジスタ420とを、夫々2個のトランジスタで構成した。
基準電圧回路500は、デプレッション型のトランジスタ110と、エンハンスメント型のトランジスタ120と、基準電圧VREFを出力する端子130とを備えている。トランジスタ120は、2個のトランジスタ121及び122を直列接続して構成されている。
基準電圧回路600は、デプレッション型のトランジスタ610と、エンハンスメント型のトランジスタ620と、カレントミラー回路を構成するトランジスタ640及びトランジスタ650とを備えている。基準電圧回路600は、トランジスタ610とトランジスタ620をカレントミラー回路で結合して構成したもので、基本的な動作は第一実施形態の基準電圧回路と同様である。基準電圧回路600は、第一実施形態の基準電圧回路と同様に複数のトランジスタで構成する。
120、220、420、620 エンハンスメント型トランジスタ
640、650 トランジスタ
130 端子
Claims (6)
- 電流源であるデプレッション型トランジスタと負荷であるエンハンスメント型トランジスタとを備えた基準電圧回路であって、
前記デプレッション型トランジスタ、または、及び、前記エンハンスメント型トランジスタは、複数個のトランジスタにより構成され、
前記デプレッション型トランジスタと前記エンハンスメント型トランジスタはコモンセントロイド(共通重心)に配置された
ことを特徴とする基準電圧回路。 - 前記デプレッション型トランジスタと前記エンハンスメント型トランジスタは、点対称に配置された
ことを特徴とする請求項1に記載の基準電圧回路。 - 前記デプレッション型トランジスタと前記エンハンスメント型トランジスタは、線対称に配置された
ことを特徴とする請求項1に記載の基準電圧回路。 - 前記デプレッション型トランジスタと前記エンハンスメント型トランジスタは、カレントミラー回路を介して接続された
ことを特徴とする請求項1から3のいずれかに記載の基準電圧回路。 - 前記カレントミラー回路を構成するトランジスタは、複数個のトランジスタにより構成され、
前記複数個のトランジスタは、コモンセントロイド(共通重心)に配置された
ことを特徴とする請求項4に記載の基準電圧回路。 - 請求項1から5のいずれかに記載の基準電圧回路を備えた半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107116355A TWI751335B (zh) | 2017-06-01 | 2018-05-15 | 參考電壓電路以及半導體裝置 |
CN201810535941.3A CN108983857A (zh) | 2017-06-01 | 2018-05-30 | 基准电压电路及半导体装置 |
KR1020180061873A KR102430853B1 (ko) | 2017-06-01 | 2018-05-30 | 기준 전압 회로 및 반도체 장치 |
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JP2017109043 | 2017-06-01 | ||
JP2017109043 | 2017-06-01 |
Publications (2)
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JP2018206363A true JP2018206363A (ja) | 2018-12-27 |
JP7075172B2 JP7075172B2 (ja) | 2022-05-25 |
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JP2018060317A Active JP7075172B2 (ja) | 2017-06-01 | 2018-03-27 | 基準電圧回路及び半導体装置 |
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JP (1) | JP7075172B2 (ja) |
Families Citing this family (1)
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JP7106931B2 (ja) * | 2018-03-28 | 2022-07-27 | セイコーエプソン株式会社 | 定電流回路、半導体装置、電子機器および半導体装置の製造方法 |
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US20180348807A1 (en) | 2018-12-06 |
JP7075172B2 (ja) | 2022-05-25 |
US11275399B2 (en) | 2022-03-15 |
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