JP2018190772A - 炭化珪素エピタキシャルウェハ、炭化珪素絶縁ゲート型バイポーラトランジスタ及びこれらの製造方法 - Google Patents
炭化珪素エピタキシャルウェハ、炭化珪素絶縁ゲート型バイポーラトランジスタ及びこれらの製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 98
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 98
- 238000004519 manufacturing process Methods 0.000 title claims description 56
- 239000012535 impurity Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 48
- 230000015556 catabolic process Effects 0.000 claims description 44
- 229910052796 boron Inorganic materials 0.000 claims description 20
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 18
- 239000000969 carrier Substances 0.000 claims description 14
- 238000000227 grinding Methods 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- 238000012423 maintenance Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 5
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
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- 239000000243 solution Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 183
- 239000007789 gas Substances 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 26
- 239000002019 doping agent Substances 0.000 description 16
- 238000005468 ion implantation Methods 0.000 description 15
- 238000005530 etching Methods 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
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- 230000000694 effects Effects 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 208000030963 borderline personality disease Diseases 0.000 description 3
- 206010006475 bronchopulmonary dysplasia Diseases 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002484 cyclic voltammetry Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012864 cross contamination Methods 0.000 description 2
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- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003923 SiC 4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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Abstract
Description
<炭化珪素絶縁ゲート型バイポーラトランジスタ>
第1の実施の形態に係る炭化珪素絶縁ゲート型バイポーラトランジスタ(以下、「第1のSiC−IGBT」とも称する。)について図1を参照して説明する。第1のSiC−IGBTは、Al及びBがドープされたp型バッファ層2と、p型バッファ層2の上に設けられたn型フィールドストップ層3と、n型フィールドストップ層3の上に設けられたn-型耐圧維持層4とを備える。
Al濃度:約5×1017cm-3以上、約5×1018cm-3以下
B濃度 :約2×1016cm-3以上、約5×1017cm-3未満
厚みt1:約5μm以上、約20μm以下
[炭化珪素エピタキシャルウェハ]
まず第1のSiC−IGBT製造用の半導体ウェハとして用意する炭化珪素エピタキシャルウェハ(以下、「第1のSiCエピタキシャルウェハ」と称する。)について、図4を参照して説明する。
[炭化珪素エピタキシャルウェハ]
第2の実施の形態に係る炭化珪素絶縁ゲート型バイポーラトランジスタ用の炭化珪素エピタキシャルウェハ(以下、「第2のSiCエピタキシャルウェハ」と称する。)について図7を用いて説明する。第2のSiCエピタキシャルウェハ(1,20,2a,3,4)は、SiCのn+型基板1と、n+型基板1の上に設けられたp型バッファ層用領域2aとを備える。
次に第2のSiCエピタキシャルウェハ(1,20,2a,3,4)を半導体ウェハとして用いた、第2の実施の形態に係る炭化珪素絶縁ゲート型バイポーラトランジスタ(以下「第2のSiC−IGBT」と称する。)の製造方法を説明する。この製造方法によって得られる第2のSiC−IGBTの構成自体は、図1に示した第1のSiC−IGBTと同じである。
本発明は上記の開示した実施の形態によって説明したが、この開示の一部をなす論述及び図面は、本発明を限定するものであると理解すべきではない。本開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかになると考えられるべきである。
2 p型バッファ層
2a p型バッファ層用領域
3 n型フィールドストップ層
4 n-型耐圧維持層
5a,5b p+型第1ベース領域
6 p型エピタキシャル層
6a,6b p型第2ベース領域
7 n型ベース領域
8a,8b n+型エミッタ領域
9a,9b p+型第1コンタクト領域
10 ゲート絶縁膜
11 ゲート電極
12 層間絶縁膜
13 エミッタ電極
14 p+型第2コンタクト領域
15 コレクタ電極
20 p-型濃度緩和バッファ層
t1 コレクタ用領域の厚み
t2 削り代の厚み
t3 p-型濃度緩和バッファ層の厚み
Claims (13)
- 炭化珪素からなり、厚みが5μm以上、20μm以下で設けられ、アルミニウムが5×1017cm-3以上、5×1018cm-3以下の不純物濃度で添加されると共に、ボロンが2×1016cm-3以上、5×1017cm-3未満の不純物濃度で添加されたp型のコレクタ層と、
前記コレクタ層の上に設けられたn型の耐圧維持層と、
前記耐圧維持層の上に設けられたp型のベース領域と、
前記ベース領域の上部に設けられたn型のエミッタ領域と、
前記耐圧維持層の上部に設けられたゲート絶縁膜と、
前記ゲート絶縁膜の上に設けられたゲート電極と、
を備え、
前記コレクタ層中に添加されたボロンによって、少数キャリアとしての電子の捕獲及び消滅を促進することを特徴とする炭化珪素絶縁ゲート型バイポーラトランジスタ。 - 順方向に通電した際に、前記コレクタ層の下面に到達する電子密度が2×1015cm-3以下であることを特徴とする請求項1に記載の炭化珪素絶縁ゲート型バイポーラトランジスタ。
- 前記耐圧維持層は、厚みが250μm以下、かつ、窒素が1×1015cm-3以下の不純物濃度で添加されていることを特徴とする請求項1に記載の炭化珪素絶縁ゲート型バイポーラトランジスタ。
- 前記耐圧維持層の厚みは100μm以上であることを特徴とする請求項3に記載の炭化珪素絶縁ゲート型バイポーラトランジスタ。
- 前記コレクタ層中の少数キャリア寿命が60ns以下であることを特徴とする請求項1に記載の炭化珪素絶縁ゲート型バイポーラトランジスタ。
- 炭化珪素の基板と、
前記基板の上に、5μm以上、20μm以下の厚みを備え、アルミニウムが5×1017cm-3以上、5×1018cm-3以下の不純物濃度で添加されると共に、ボロンが2×1016cm-3以上、5×1017cm-3未満の不純物濃度で添加されたコレクタ用領域を有して設けられたp型のバッファ層と、
を備え、
前記バッファ層中に添加されたボロンによって、少数キャリアとしての電子の捕獲及び消滅を促進することを特徴とする炭化珪素エピタキシャルウェハ。 - 前記バッファ層は、前記コレクタ用領域と前記基板との間に、前記基板の研削処理に伴って生じる削り代として10μmの厚みを有する領域を更に備えることを特徴とする請求項6に記載の炭化珪素エピタキシャルウェハ。
- 更に、前記バッファ層の上に厚みが250μm以下で設けられ、窒素が1×1015cm-3以下の不純物濃度で添加されたn型の耐圧維持層を備えることを特徴とする請求項6に記載の炭化珪素エピタキシャルウェハ。
- 前記耐圧維持層の厚みは100μm以上であることを特徴とする請求項8に記載の炭化珪素エピタキシャルウェハ。
- 更に、前記基板と前記バッファ層との間に、前記バッファ層より低不純物濃度のp型の濃度緩和バッファ層を備えることを特徴とする請求項6に記載の炭化珪素エピタキシャルウェハ。
- 前記バッファ層中の少数キャリア寿命が60ns以下であることを特徴とする請求項6に記載の炭化珪素エピタキシャルウェハ。
- 基板の上に、炭化珪素からなるp型のコレクタ層を、厚みが5μm以上、20μm以下で、アルミニウムを5×1017cm-3以上、5×1018cm-3以下の不純物濃度で添加すると共に、ボロンが2×1016cm-3以上、5×1017cm-3未満の不純物濃度で添加して形成する工程と、
前記基板を除去する工程と、
前記コレクタ層の上にn型の耐圧維持層を形成する工程と、
前記耐圧維持層の上にp型のベース領域を形成する工程と、
前記ベース領域の上部にn型のエミッタ領域を形成する工程と、
前記耐圧維持層の上部にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜の上にゲート電極を形成する工程と、
を含み、
前記コレクタ層中に添加されたボロンによって、少数キャリアとしての電子の捕獲及び消滅を促進することを特徴とする炭化珪素絶縁ゲート型バイポーラトランジスタの製造方法。 - 基板の上に、コレクタ用領域として炭化珪素からなるp型のバッファ層を、厚みが5μm以上、20μm以下で、アルミニウムを5×1017cm-3以上、5×1018cm-3以下の不純物濃度で添加すると共に、ボロンが2×1016cm-3以上、5×1017cm-3未満の不純物濃度で添加して形成する工程を含み、前記バッファ層中に添加されたボロンによって、少数キャリアとしての電子の捕獲及び消滅を促進することを特徴とする炭化珪素エピタキシャルウェハの製造方法。
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