JP2018186269A5 - - Google Patents
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- JP2018186269A5 JP2018186269A5 JP2018081932A JP2018081932A JP2018186269A5 JP 2018186269 A5 JP2018186269 A5 JP 2018186269A5 JP 2018081932 A JP2018081932 A JP 2018081932A JP 2018081932 A JP2018081932 A JP 2018081932A JP 2018186269 A5 JP2018186269 A5 JP 2018186269A5
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- mhz
- carbon
- gas
- oxygen
- plasma
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- 238000000034 method Methods 0.000 claims description 100
- 239000007789 gas Substances 0.000 claims description 78
- 229910052799 carbon Inorganic materials 0.000 claims description 62
- 210000002381 plasma Anatomy 0.000 claims description 60
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 58
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 57
- 239000001301 oxygen Substances 0.000 claims description 57
- 229910052760 oxygen Inorganic materials 0.000 claims description 57
- 239000000463 material Substances 0.000 claims description 49
- 239000011261 inert gas Substances 0.000 claims description 41
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 9
- 238000010926 purge Methods 0.000 claims description 9
- 238000009966 trimming Methods 0.000 claims description 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 238000009616 inductively coupled plasma Methods 0.000 claims description 8
- 239000000376 reactant Substances 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 4
- 239000001569 carbon dioxide Substances 0.000 claims description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 claims description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 2
- OMBRFUXPXNIUCZ-UHFFFAOYSA-N dioxidonitrogen(1+) Chemical compound O=[N+]=O OMBRFUXPXNIUCZ-UHFFFAOYSA-N 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000001272 nitrous oxide Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 2
- -1 silicon nitrides Chemical class 0.000 claims description 2
- 239000011162 core material Substances 0.000 description 15
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000013515 script Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
Images
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022169566A JP7460727B2 (ja) | 2017-04-24 | 2022-10-24 | パターニング用途のための原子層エッチング、反応性前駆体、及びエネルギ源 |
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762489113P | 2017-04-24 | 2017-04-24 | |
| US62/489,113 | 2017-04-24 | ||
| US15/582,359 | 2017-04-28 | ||
| US15/582,359 US9997371B1 (en) | 2017-04-24 | 2017-04-28 | Atomic layer etch methods and hardware for patterning applications |
| US201862624520P | 2018-01-31 | 2018-01-31 | |
| US62/624,520 | 2018-01-31 | ||
| US15/955,099 US10832909B2 (en) | 2017-04-24 | 2018-04-17 | Atomic layer etch, reactive precursors and energetic sources for patterning applications |
| US15/955,099 | 2018-04-17 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022169566A Division JP7460727B2 (ja) | 2017-04-24 | 2022-10-24 | パターニング用途のための原子層エッチング、反応性前駆体、及びエネルギ源 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018186269A JP2018186269A (ja) | 2018-11-22 |
| JP2018186269A5 true JP2018186269A5 (https=) | 2021-06-10 |
| JP7165506B2 JP7165506B2 (ja) | 2022-11-04 |
Family
ID=63854077
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018081932A Active JP7165506B2 (ja) | 2017-04-24 | 2018-04-23 | パターニング用途のための原子層エッチング、反応性前駆体、及びエネルギ源 |
| JP2022169566A Active JP7460727B2 (ja) | 2017-04-24 | 2022-10-24 | パターニング用途のための原子層エッチング、反応性前駆体、及びエネルギ源 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022169566A Active JP7460727B2 (ja) | 2017-04-24 | 2022-10-24 | パターニング用途のための原子層エッチング、反応性前駆体、及びエネルギ源 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10832909B2 (https=) |
| JP (2) | JP7165506B2 (https=) |
| KR (1) | KR102625972B1 (https=) |
| CN (1) | CN108847386B (https=) |
| SG (1) | SG10201803376RA (https=) |
| TW (1) | TWI780145B (https=) |
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| US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
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| US10494715B2 (en) | 2017-04-28 | 2019-12-03 | Lam Research Corporation | Atomic layer clean for removal of photoresist patterning scum |
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