JP2018180416A5 - - Google Patents

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Publication number
JP2018180416A5
JP2018180416A5 JP2017083039A JP2017083039A JP2018180416A5 JP 2018180416 A5 JP2018180416 A5 JP 2018180416A5 JP 2017083039 A JP2017083039 A JP 2017083039A JP 2017083039 A JP2017083039 A JP 2017083039A JP 2018180416 A5 JP2018180416 A5 JP 2018180416A5
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JP
Japan
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groove
region
semiconductor device
insulating film
manufacturing
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JP2017083039A
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English (en)
Japanese (ja)
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JP6982976B2 (ja
JP2018180416A (ja
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Priority to JP2017083039A priority Critical patent/JP6982976B2/ja
Priority claimed from JP2017083039A external-priority patent/JP6982976B2/ja
Priority to US15/945,120 priority patent/US10332783B2/en
Publication of JP2018180416A publication Critical patent/JP2018180416A/ja
Publication of JP2018180416A5 publication Critical patent/JP2018180416A5/ja
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JP2017083039A 2017-04-19 2017-04-19 半導体デバイスの製造方法および半導体デバイス Active JP6982976B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017083039A JP6982976B2 (ja) 2017-04-19 2017-04-19 半導体デバイスの製造方法および半導体デバイス
US15/945,120 US10332783B2 (en) 2017-04-19 2018-04-04 Method of manufacturing semiconductor device, and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017083039A JP6982976B2 (ja) 2017-04-19 2017-04-19 半導体デバイスの製造方法および半導体デバイス

Publications (3)

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JP2018180416A JP2018180416A (ja) 2018-11-15
JP2018180416A5 true JP2018180416A5 (enExample) 2020-07-02
JP6982976B2 JP6982976B2 (ja) 2021-12-17

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JP2017083039A Active JP6982976B2 (ja) 2017-04-19 2017-04-19 半導体デバイスの製造方法および半導体デバイス

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US (1) US10332783B2 (enExample)
JP (1) JP6982976B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12349495B2 (en) 2020-02-21 2025-07-01 Canon Kabushiki Kaisha Semiconductor device and method for manufacturing semiconductor device
JP7585030B2 (ja) * 2020-02-21 2024-11-18 キヤノン株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136020A (ja) 1991-11-11 1993-06-01 Fujitsu Ltd 半導体装置の露光方法
US6033977A (en) 1997-06-30 2000-03-07 Siemens Aktiengesellschaft Dual damascene structure
TW457635B (en) 2000-04-21 2001-10-01 Ind Tech Res Inst Manufacturing process of copper structure
JP2006128543A (ja) * 2004-11-01 2006-05-18 Nec Electronics Corp 電子デバイスの製造方法
JP2006148003A (ja) * 2004-11-24 2006-06-08 Toshiba Corp 半導体装置の製造方法及び半導体装置
JP2007103723A (ja) 2005-10-05 2007-04-19 Renesas Technology Corp 半導体装置およびその製造方法
JP4699172B2 (ja) * 2005-10-25 2011-06-08 ルネサスエレクトロニクス株式会社 半導体装置
JP5008929B2 (ja) 2006-09-11 2012-08-22 ソニーモバイルディスプレイ株式会社 液晶装置の製造方法
JP2010098095A (ja) * 2008-10-16 2010-04-30 Sony Corp 半導体装置及び半導体装置の製造方法
JP2010141093A (ja) 2008-12-11 2010-06-24 Sony Corp 半導体装置とその製造方法
JP2010165737A (ja) 2009-01-13 2010-07-29 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
JP2010165760A (ja) 2009-01-14 2010-07-29 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP6240443B2 (ja) 2012-09-17 2017-11-29 シチズンファインデバイス株式会社 液晶表示装置
JP2014102292A (ja) 2012-11-16 2014-06-05 Canon Inc フォトマスク、分割露光方法、および半導体デバイスの製造方法
WO2014109044A1 (ja) 2013-01-11 2014-07-17 ルネサスエレクトロニクス株式会社 半導体装置
US20170256506A1 (en) 2013-01-11 2017-09-07 Renesas Electronics Corporation Semiconductor device
JP5855695B2 (ja) 2014-03-24 2016-02-09 ルネサスエレクトロニクス株式会社 固体撮像素子の製造方法及び固体撮像素子
JP2016192467A (ja) 2015-03-31 2016-11-10 ルネサスエレクトロニクス株式会社 半導体装置

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