JP2018155908A - レジスト材料及びパターン形成方法 - Google Patents
レジスト材料及びパターン形成方法 Download PDFInfo
- Publication number
- JP2018155908A JP2018155908A JP2017052453A JP2017052453A JP2018155908A JP 2018155908 A JP2018155908 A JP 2018155908A JP 2017052453 A JP2017052453 A JP 2017052453A JP 2017052453 A JP2017052453 A JP 2017052453A JP 2018155908 A JP2018155908 A JP 2018155908A
- Authority
- JP
- Japan
- Prior art keywords
- group
- carbon atoms
- branched
- linear
- cyclic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 0 CC(C)(C)CC(*1CC1)(C(C)(C)C)C(OCC(CC(C(C1)C2C(O*=C)=*)C(*3)C1C2C3=C)=C)=O Chemical compound CC(C)(C)CC(*1CC1)(C(C)(C)C)C(OCC(CC(C(C1)C2C(O*=C)=*)C(*3)C1C2C3=C)=C)=O 0.000 description 24
- SQJZJQJVWLTJNC-UHFFFAOYSA-N Brc(cc1)ccc1[S+](c1ccccc1)c1ccccc1 Chemical compound Brc(cc1)ccc1[S+](c1ccccc1)c1ccccc1 SQJZJQJVWLTJNC-UHFFFAOYSA-N 0.000 description 1
- RKPRTMYRSBBFDP-UHFFFAOYSA-N C=C(c(cc1)ccc1C([U]c(cc1)ccc1[S+](c1ccccc1)c1ccccc1)=[U])[Rh] Chemical compound C=C(c(cc1)ccc1C([U]c(cc1)ccc1[S+](c1ccccc1)c1ccccc1)=[U])[Rh] RKPRTMYRSBBFDP-UHFFFAOYSA-N 0.000 description 1
- BDENRTOGYTUGTF-UHFFFAOYSA-N CC(C)(C)c(cc1)ccc1C(Oc(cc1)ccc1[S+](c1ccccc1)c1ccccc1)=O Chemical compound CC(C)(C)c(cc1)ccc1C(Oc(cc1)ccc1[S+](c1ccccc1)c1ccccc1)=O BDENRTOGYTUGTF-UHFFFAOYSA-N 0.000 description 1
- ZNKKYYNWFKHNHZ-UHFFFAOYSA-N CC1C=CC=CC1 Chemical compound CC1C=CC=CC1 ZNKKYYNWFKHNHZ-UHFFFAOYSA-N 0.000 description 1
- UEUPCGWEAPYVLW-UHFFFAOYSA-N Cc(cc1)ccc1C(Oc(cc1)ccc1[S+](c1ccccc1)c1ccccc1)=O Chemical compound Cc(cc1)ccc1C(Oc(cc1)ccc1[S+](c1ccccc1)c1ccccc1)=O UEUPCGWEAPYVLW-UHFFFAOYSA-N 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Cc1ccccc1 Chemical compound Cc1ccccc1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
- KFSJVNNERGJJEB-UHFFFAOYSA-N Clc(cc1)ccc1[S+](c1ccccc1)c1ccccc1 Chemical compound Clc(cc1)ccc1[S+](c1ccccc1)c1ccccc1 KFSJVNNERGJJEB-UHFFFAOYSA-N 0.000 description 1
- UBWOWRYTMMFHHB-UHFFFAOYSA-N O=C(c(c(F)c(c(F)c1F)F)c1F)Oc(cc1)ccc1[S+](c1ccccc1)c1ccccc1 Chemical compound O=C(c(c(F)c(c(F)c1F)F)c1F)Oc(cc1)ccc1[S+](c1ccccc1)c1ccccc1 UBWOWRYTMMFHHB-UHFFFAOYSA-N 0.000 description 1
- NSBFRVCNBRVKEB-UHFFFAOYSA-N O=C(c(ccc(F)c1)c1F)Oc(cc1)ccc1[S+](c1ccccc1)c1ccccc1 Chemical compound O=C(c(ccc(F)c1)c1F)Oc(cc1)ccc1[S+](c1ccccc1)c1ccccc1 NSBFRVCNBRVKEB-UHFFFAOYSA-N 0.000 description 1
- ASGPVZLJUBGSEQ-UHFFFAOYSA-N O=C(c1cc(F)cc(F)c1)Oc(cc1)ccc1[S+](c1ccccc1)c1ccccc1 Chemical compound O=C(c1cc(F)cc(F)c1)Oc(cc1)ccc1[S+](c1ccccc1)c1ccccc1 ASGPVZLJUBGSEQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C303/00—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
- C07C303/32—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of salts of sulfonic acids
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C309/04—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing only one sulfo group
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C309/06—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
- C07C309/12—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C309/13—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton
- C07C309/14—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton containing amino groups bound to the carbon skeleton
- C07C309/15—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton containing amino groups bound to the carbon skeleton the nitrogen atom of at least one of the amino groups being part of any of the groups, X being a hetero atom, Y being any atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/28—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/29—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton of non-condensed six-membered aromatic rings
- C07C309/30—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton of non-condensed six-membered aromatic rings of six-membered aromatic rings substituted by alkyl groups
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/28—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/29—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton of non-condensed six-membered aromatic rings
- C07C309/30—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton of non-condensed six-membered aromatic rings of six-membered aromatic rings substituted by alkyl groups
- C07C309/31—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton of non-condensed six-membered aromatic rings of six-membered aromatic rings substituted by alkyl groups by alkyl groups containing at least three carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/28—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/29—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton of non-condensed six-membered aromatic rings
- C07C309/32—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton of non-condensed six-membered aromatic rings containing at least two non-condensed six-membered aromatic rings in the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/28—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/39—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing halogen atoms bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/28—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/45—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton
- C07C309/46—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton having the sulfo groups bound to carbon atoms of non-condensed six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/28—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/45—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton
- C07C309/48—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton the carbon skeleton being further substituted by halogen atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/28—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/45—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton
- C07C309/51—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton at least one of the nitrogen atoms being part of any of the groups, X being a hetero atom, Y being any atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/28—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/45—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton
- C07C309/52—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton the carbon skeleton being further substituted by doubly-bound oxygen atoms
- C07C309/53—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton the carbon skeleton being further substituted by doubly-bound oxygen atoms the carbon skeleton containing carbon atoms of quinone rings
- C07C309/54—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton the carbon skeleton being further substituted by doubly-bound oxygen atoms the carbon skeleton containing carbon atoms of quinone rings at least one of the nitrogen atoms being part of any of the groups, X being a hetero atom, Y being any atom
- C07C309/56—Y being a hetero atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/62—Halogen-containing esters
- C07C69/63—Halogen-containing esters of saturated acids
- C07C69/635—Halogen-containing esters of saturated acids containing rings in the acid moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/20—Esters of polyhydric alcohols or phenols, e.g. 2-hydroxyethyl (meth)acrylate or glycerol mono-(meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/22—Esters containing halogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/22—Esters containing halogen
- C08F220/24—Esters containing halogen containing perhaloalkyl radicals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F224/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F228/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur
- C08F228/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a bond to sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
- G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/282—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing two or more oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
- C08F220/301—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and one oxygen in the alcohol moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
- C08F220/302—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and two or more oxygen atoms in the alcohol moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/38—Esters containing sulfur
- C08F220/382—Esters containing sulfur and containing oxygen, e.g. 2-sulfoethyl (meth)acrylate
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
1.ベースポリマー、及び下記式(A−1)で表されるスルホニウム塩及び/又は(A−2)で表されるヨードニウム塩を含むレジスト材料。
2.mが、3である1のレジスト材料。
3.前記スルホニウム塩及び/又はヨードニウム塩が、クエンチャーとして機能する1又は2のレジスト材料。
4.更に、スルホン酸、イミド酸又はメチド酸を発生する酸発生剤を含む3のレジスト材料。
5.前記スルホニウム塩及び/又はヨードニウム塩が、酸発生剤として機能する1又は2のレジスト材料。
6.更に、クエンチャーを含む5のレジスト材料。
7.更に、有機溶剤を含む1〜6のいずれかのレジスト材料。
8.前記ベースポリマーが、下記式(a1)で表される繰り返し単位、又は下記式(a2)で表される繰り返し単位を含むものである1〜7のいずれかのレジスト材料。
9.更に、溶解阻止剤を含む8のレジスト材料。
10.化学増幅ポジ型レジスト材料である8又は9のレジスト材料。
11.前記ベースポリマーが、酸不安定基を含まないものである1〜7のいずれかのレジスト材料。
12.更に、架橋剤を含む11のレジスト材料。
13.化学増幅ネガ型レジスト材料である11又は12のレジスト材料。
14.更に、界面活性剤を含む1〜13のいずれかのレジスト材料。
15.前記ベースポリマーが、更に、下記式(f1)〜(f3)で表される繰り返し単位から選ばれる少なくとも1種を含む1〜11のいずれかのレジスト材料。
16.1〜15のいずれかのレジスト材料を基板上に塗布し、加熱処理をしてレジスト膜を形成する工程と、前記レジスト膜を高エネルギー線で露光する工程と、現像液を用いて露光したレジスト膜を現像する工程とを含むパターン形成方法。
17.前記高エネルギー線が、波長193nmのArFエキシマレーザー又は波長248nmのKrFエキシマレーザーである16のパターン形成方法。
18.前記高エネルギー線が、EB又は波長3〜15nmのEUVである16のパターン形成方法。
本発明のレジスト材料は、ベースポリマー、及びヨウ素で置換されたベンゼン環に結合したスルホン酸(以下、ヨウ素化ベンゼン環含有スルホン酸ともいう。)のスルホニウム塩又はヨードニウム塩(以下、単にオニウム塩ともいう。)を含む。前記オニウム塩は、光照射によってヨウ素化ベンゼン環含有スルホン酸を発生する酸発生剤であるが、強塩基性のスルホニウム又はヨードニウムを有しているためクエンチャーとしても機能し得る。前記ヨウ素化ベンゼン環含有スルホン酸は、酸不安定基が3級エステルや3級エーテルの場合、脱保護反応を引き起こす程の酸性度はないため、後述するように、別途酸不安定基の脱保護反応を引き起こすために、強酸であるα位がフッ素化されたスルホン酸、イミド酸又はメチド酸を発生させる酸発生剤を添加することが有効である。なお、α位がフッ素化されたスルホン酸、イミド酸又はメチド酸を発生させる酸発生剤は添加型でもよいが、ベースポリマーに結合しているバウンド型でもよい。
本発明のレジスト材料に含まれるベースポリマーは、ポジ型レジスト材料の場合、酸不安定基を含む繰り返し単位を含む。酸不安定基を含む繰り返し単位としては、下記式(a1)で表される繰り返し単位(以下、繰り返し単位a1という。)、又は下記式(a2)で表される繰り返し単位(以下、繰り返し単位a2という。)が好ましい。
本発明のレジスト材料は、更に前記ヨウ素化ベンゼン環含有スルホン酸よりも強酸を発生する酸発生剤を含んでもよい。このような酸発生剤を含むことで、前記オニウム塩がクエンチャーとして機能し、本発明のレジスト材料が、化学増幅ポジ型レジスト材料又は化学増幅ネガ型レジスト材料として機能することができる。前記酸発生剤としては、例えば、活性光線又は放射線に感応して酸を発生する化合物(光酸発生剤)が挙げられる。光酸発生剤としては、高エネルギー線照射により酸を発生する化合物であればいかなるものでも構わないが、フッ素原子を有するスルホン酸、イミド酸又はメチド酸を発生するものが好ましい。好適な光酸発生剤としてはスルホニウム塩、ヨードニウム塩、スルホニルジアゾメタン、N−スルホニルオキシイミド、オキシム−O−スルホネート型酸発生剤等がある。光酸発生剤の具体例としては、特開2008−111103号公報の段落[0122]〜[0142]に記載されているものが挙げられる。
本発明のレジスト材料は、前記オニウム塩がクエンチャーとして機能する場合又は酸発生剤として機能する場合、前記オニウム塩以外のクエンチャー(以下、その他のクエンチャーという。)を含んでもよい。その他のクエンチャーとしては、従来型の塩基性化合物が挙げられる。従来型の塩基性化合物としては、第1級、第2級、第3級の脂肪族アミン類、混成アミン類、芳香族アミン類、複素環アミン類、カルボキシ基を有する含窒素化合物、スルホニル基を有する含窒素化合物、ヒドロキシ基を有する含窒素化合物、ヒドロキシフェニル基を有する含窒素化合物、アルコール性含窒素化合物、アミド類、イミド類、カーバメート類等が挙げられる。特に、特開2008−111103号公報の段落[0146]〜[0164]に記載の第1級、第2級、第3級のアミン化合物、特にはヒドロキシ基、エーテル基、エステル基、ラクトン環、シアノ基、スルホン酸エステル基を有するアミン化合物あるいは特許第3790649号公報に記載のカーバメート基を有する化合物等が好ましい。このような塩基性化合物を添加することによって、例えば、レジスト膜中での酸の拡散速度を更に抑制したり、形状を補正したりすることができる。
前述した成分に加えて、有機溶剤、界面活性剤、溶解阻止剤、架橋剤等を目的に応じて適宜組み合わせて配合してポジ型レジスト材料及びネガ型レジスト材料を構成することによって、露光部では前記ベースポリマーが触媒反応により現像液に対する溶解速度が加速されるので、極めて高感度のポジ型レジスト材料及びネガ型レジスト材料とすることができる。この場合、レジスト膜の溶解コントラスト及び解像性が高く、露光余裕度があり、プロセス適応性に優れ、露光後のパターン形状が良好でありながら、特に酸拡散を抑制できることから粗密寸法差が小さく、これらのことから実用性が高く、超LSI用レジスト材料として非常に有効なものとすることができる。特に、酸発生剤を含有させ、酸触媒反応を利用した化学増幅ポジ型レジスト材料とすると、より高感度のものとすることができるとともに、諸特性が一層優れたものとなり極めて有用なものとなる。
本発明のレジスト材料を種々の集積回路製造に用いる場合は、公知のリソグラフィー技術を適用することができる。
各々のモノマーを組み合わせてテトラヒドロフラン(THF)溶剤下で共重合反応を行い、メタノールに晶出し、更にヘキサンで洗浄を繰り返した後に単離、乾燥して、以下に示す組成のベースポリマー(ポリマー1〜3)を得た。得られたベースポリマーの組成は1H−NMRにより、Mw及び分散度(Mw/Mn)はGPC(溶剤:THF、標準:ポリスチレン)により確認した。
界面活性剤としてスリーエム社製FC-4430を100ppm溶解させた溶剤に、表1及び2に示される組成で各成分を溶解させた溶液を、0.2μmサイズのフィルターで濾過してレジスト材料を調製した。
・有機溶剤:PGMEA(プロピレングリコールモノメチルエーテルアセテート)
GBL(γ−ブチロラクトン)
CyH(シクロヘキサノン)
PGME(プロピレングリコールモノメチルエーテル)
[実施例1−1〜1−9、比較例1−1〜1−5]
表1に示す各レジスト材料を、シリコンウエハーに信越化学工業(株)製スピンオンカーボン膜ODL-102(カーボンの含有量が80質量%)を200nm、その上にケイ素含有スピンオンハードマスクSHB-A940(ケイ素の含有量が43質量%)を35nmの膜厚で成膜したトライレイヤープロセス用の基板上にスピンコーティングし、ホットプレートを用いて100℃で60秒間ベークし、膜厚80nmのレジスト膜を作製した。これをArFエキシマレーザースキャナー((株)ニコン製NSR-S610C、NA1.30、σ0.98/0.78、35度クロスポール照明、Azimuthally偏光照明、6%ハーフトーン位相シフトマスク)を用いて、ウエハー上寸法が50nmライン、100nmピッチのマスクを用いて液浸露光し、表1に記載の温度で60秒間PEBを行った。なお、液浸液としては水を用いた。実施例1−1〜1−8及び比較例1−1〜1−4では、酢酸n−ブチルで30秒間現像を行い、実施例1−9及び比較例1−5では、2.38質量%TMAH水溶液で現像を行い、寸法が50nmスペース、100nmピッチのラインアンドスペースのネガパターンを形成した。(株)日立ハイテクノロジーズ製測長SEM(CG4000)を用いてラインアンドスペースパターンが1:1で形成されるときの露光量を測定してこれを感度とし、また、このときのエッジラフネス(LWR)を測定した。結果を表1に示す。
[実施例2−1〜2−13、比較例2−1]
表2に示す各レジスト材料を、信越化学工業(株)製ケイ素含有スピンオンハードマスクSHB-A940(ケイ素の含有量が43質量%)を13nm膜厚で形成したSi基板上にスピンコートし、ホットプレートを用いて105℃で60秒間プリベークし、膜厚60nmのレジスト膜を作製した。これに、ASML社製EUVスキャナーNXE3300(NA0.33、σ0.9/0.6、クアドルポール照明)を用いて露光し、ホットプレートを用いて表2に記載の温度で60秒間PEBを行い、2.38質量%TMAH水溶液で30秒間現像を行って、ウエハー上の寸法でピッチ46nm、寸法27.6nm(+20%バイアス)のホールパターンのマスクを使って、寸法23nmのホールパターンを形成した。得られたレジストパターンについて次の評価を行った。(株)日立ハイテクノロジーズ製測長SEM(CG5000)を用いてホール寸法が23nmで形成されるときの露光量を測定してこれを感度とし、また、このときのホール50個の寸法バラツキ(CDU、3σ)を求めた。結果を表2に示す。
Claims (18)
- ベースポリマー、及び下記式(A−1)で表されるスルホニウム塩及び/又は(A−2)で表されるヨードニウム塩を含むレジスト材料。
- mが、3である請求項1記載のレジスト材料。
- 前記スルホニウム塩及び/又はヨードニウム塩が、クエンチャーとして機能する請求項1又は2記載のレジスト材料。
- 更に、スルホン酸、イミド酸又はメチド酸を発生する酸発生剤を含む請求項3記載のレジスト材料。
- 前記スルホニウム塩及び/又はヨードニウム塩が、酸発生剤として機能する請求項1又は2記載のレジスト材料。
- 更に、クエンチャーを含む請求項5記載のレジスト材料。
- 更に、有機溶剤を含む請求項1〜6のいずれか1項記載のレジスト材料。
- 更に、溶解阻止剤を含む請求項8記載のレジスト材料。
- 化学増幅ポジ型レジスト材料である請求項8又は9記載のレジスト材料。
- 前記ベースポリマーが、酸不安定基を含まないものである請求項1〜7のいずれか1項記載のレジスト材料。
- 更に、架橋剤を含む請求項11記載のレジスト材料。
- 化学増幅ネガ型レジスト材料である請求項11又は12記載のレジスト材料。
- 更に、界面活性剤を含む請求項1〜13のいずれか1項記載のレジスト材料。
- 前記ベースポリマーが、更に、下記式(f1)〜(f3)で表される繰り返し単位から選ばれる少なくとも1種を含む請求項1〜11のいずれか1項記載のレジスト材料。
- 請求項1〜15のいずれか1項記載のレジスト材料を基板上に塗布し、加熱処理をしてレジスト膜を形成する工程と、前記レジスト膜を高エネルギー線で露光する工程と、現像液を用いて露光したレジスト膜を現像する工程とを含むパターン形成方法。
- 前記高エネルギー線が、波長193nmのArFエキシマレーザー又は波長248nmのKrFエキシマレーザーである請求項16記載のパターン形成方法。
- 前記高エネルギー線が、電子線又は波長3〜15nmの極端紫外線である請求項16記載のパターン形成方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017052453A JP6645464B2 (ja) | 2017-03-17 | 2017-03-17 | レジスト材料及びパターン形成方法 |
TW107108526A TWI664496B (zh) | 2017-03-17 | 2018-03-14 | 光阻材料及圖案形成方法 |
US15/920,744 US10613437B2 (en) | 2017-03-17 | 2018-03-14 | Resist composition and patterning process |
KR1020180030264A KR102078912B1 (ko) | 2017-03-17 | 2018-03-15 | 레지스트 재료 및 패턴 형성 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017052453A JP6645464B2 (ja) | 2017-03-17 | 2017-03-17 | レジスト材料及びパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018155908A true JP2018155908A (ja) | 2018-10-04 |
JP6645464B2 JP6645464B2 (ja) | 2020-02-14 |
Family
ID=63519325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017052453A Active JP6645464B2 (ja) | 2017-03-17 | 2017-03-17 | レジスト材料及びパターン形成方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10613437B2 (ja) |
JP (1) | JP6645464B2 (ja) |
KR (1) | KR102078912B1 (ja) |
TW (1) | TWI664496B (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019094323A (ja) * | 2017-11-20 | 2019-06-20 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | ヨウ素含有光酸発生剤及びそれを含む組成物 |
JP2020083760A (ja) * | 2018-11-15 | 2020-06-04 | 信越化学工業株式会社 | 新規塩化合物、化学増幅レジスト組成物、及びパターン形成方法 |
WO2023017702A1 (ja) * | 2021-08-12 | 2023-02-16 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法及び電子デバイスの製造方法 |
JP7353124B2 (ja) | 2018-10-19 | 2023-09-29 | 住友化学株式会社 | 化合物、レジスト組成物及びレジストパターンの製造方法 |
JP7354986B2 (ja) | 2019-11-20 | 2023-10-03 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
KR20240057361A (ko) | 2022-10-24 | 2024-05-02 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 레지스트 재료 및 패턴 형성 방법 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6973279B2 (ja) * | 2017-06-14 | 2021-11-24 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
KR102417180B1 (ko) * | 2017-09-29 | 2022-07-05 | 삼성전자주식회사 | Duv용 포토레지스트 조성물, 패턴 형성 방법 및 반도체 소자의 제조 방법 |
JP7010195B2 (ja) * | 2017-11-29 | 2022-01-26 | 信越化学工業株式会社 | パターン形成方法 |
JP7357505B2 (ja) | 2018-11-21 | 2023-10-06 | 信越化学工業株式会社 | ヨウ素含有熱硬化性ケイ素含有材料、これを含むeuvリソグラフィー用レジスト下層膜形成用組成物、及びパターン形成方法 |
JP7238743B2 (ja) * | 2018-12-18 | 2023-03-14 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP7360927B2 (ja) * | 2019-01-09 | 2023-10-13 | 信越化学工業株式会社 | 熱硬化性ケイ素含有化合物、ケイ素含有膜形成用組成物及びパターン形成方法 |
JP7096188B2 (ja) * | 2019-03-22 | 2022-07-05 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
JP7492842B2 (ja) * | 2019-03-25 | 2024-05-30 | 住友化学株式会社 | 樹脂、レジスト組成物及びレジストパターンの製造方法 |
JP7247732B2 (ja) * | 2019-04-24 | 2023-03-29 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生剤及び化合物 |
JP7368324B2 (ja) * | 2019-07-23 | 2023-10-24 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法 |
JP7334684B2 (ja) * | 2019-08-02 | 2023-08-29 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP7351257B2 (ja) * | 2019-08-14 | 2023-09-27 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
US11709426B2 (en) * | 2020-01-22 | 2023-07-25 | Shin-Etsu Chemical Co., Ltd. | Resist composition and pattern forming process |
JP2021123580A (ja) * | 2020-02-06 | 2021-08-30 | 住友化学株式会社 | カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
JP2021123579A (ja) * | 2020-02-06 | 2021-08-30 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
US11675267B2 (en) * | 2020-03-23 | 2023-06-13 | Sumitomo Chemical Company, Limited | Resist composition and method for producing resist pattern |
JP2022081416A (ja) * | 2020-11-19 | 2022-05-31 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
KR20220074627A (ko) * | 2020-11-27 | 2022-06-03 | 삼성전자주식회사 | 광산발생제, 이를 포함하는 포토레지스트 조성물, 및 상기 광산발생제의 제조방법 |
JP2023177048A (ja) | 2022-06-01 | 2023-12-13 | 信越化学工業株式会社 | 化学増幅ネガ型レジスト組成物及びレジストパターン形成方法 |
JP2023177038A (ja) | 2022-06-01 | 2023-12-13 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト組成物及びレジストパターン形成方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005170808A (ja) * | 2003-12-09 | 2005-06-30 | Hodogaya Chem Co Ltd | スルホン酸オニウム塩化合物、該化合物の製造方法、該化合物を用いた感光性樹脂組成物および感光性材料 |
US20090181319A1 (en) * | 2008-01-16 | 2009-07-16 | International Business Machines Corporation | Aromatic fluorine-free photoacid generators and photoresist compositions containing the same |
JP2010106236A (ja) * | 2008-10-30 | 2010-05-13 | Korea Kumho Petrochem Co Ltd | 芳香族環を含む酸発生剤 |
JP2010155824A (ja) * | 2008-12-04 | 2010-07-15 | Shin-Etsu Chemical Co Ltd | スルホニウム塩、酸発生剤及びこれを用いたレジスト材料、フォトマスクブランク、並びにパターン形成方法 |
JP2015034963A (ja) * | 2013-07-10 | 2015-02-19 | 富士フイルム株式会社 | 化合物、感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスク及びパターン形成方法、並びに、電子デバイスの製造方法及び電子デバイス |
JP2015062057A (ja) * | 2013-08-20 | 2015-04-02 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生剤及び化合物 |
JP2016065016A (ja) * | 2014-09-25 | 2016-04-28 | 信越化学工業株式会社 | スルホニウム塩、レジスト組成物及びレジストパターン形成方法 |
WO2016201125A1 (en) * | 2015-06-12 | 2016-12-15 | Nutech Ventures | Radioiodinated bioconjugation reagents |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3751518B2 (ja) | 1999-10-29 | 2006-03-01 | 信越化学工業株式会社 | 化学増幅レジスト組成物 |
TWI269940B (en) | 1999-10-29 | 2007-01-01 | Shinetsu Chemical Co | Resist composition |
JP4288446B2 (ja) * | 2000-10-23 | 2009-07-01 | 信越化学工業株式会社 | 新規オニウム塩及びレジスト材料用光酸発生剤並びにレジスト材料及びパターン形成方法 |
JP4288445B2 (ja) * | 2000-10-23 | 2009-07-01 | 信越化学工業株式会社 | 新規オニウム塩及びレジスト材料用光酸発生剤並びにレジスト材料及びパターン形成方法 |
US6749988B2 (en) | 2000-11-29 | 2004-06-15 | Shin-Etsu Chemical Co., Ltd. | Amine compounds, resist compositions and patterning process |
JP4320520B2 (ja) | 2000-11-29 | 2009-08-26 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP4044741B2 (ja) | 2001-05-31 | 2008-02-06 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP5460230B2 (ja) * | 2008-10-31 | 2014-04-02 | 富士フイルム株式会社 | ポジ型感光性組成物 |
JP5387181B2 (ja) * | 2009-07-08 | 2014-01-15 | 信越化学工業株式会社 | スルホニウム塩、レジスト材料及びパターン形成方法 |
KR20110132206A (ko) * | 2010-06-01 | 2011-12-07 | 금호석유화학 주식회사 | 광산발생제, 이의 제조방법 및 이를 포함하는 레지스트 조성물 |
JP6249664B2 (ja) * | 2013-07-31 | 2017-12-20 | 東京応化工業株式会社 | レジスト組成物、酸発生剤、及びレジストパターン形成方法 |
JP6028716B2 (ja) | 2013-11-05 | 2016-11-16 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP6125468B2 (ja) * | 2014-07-04 | 2017-05-10 | 信越化学工業株式会社 | 光酸発生剤、化学増幅型レジスト材料及びパターン形成方法 |
KR102024614B1 (ko) * | 2015-03-31 | 2019-09-24 | 후지필름 가부시키가이샤 | 패턴 형성 방법, 포토마스크의 제조 방법 및 전자 디바이스의 제조 방법 |
JP6531684B2 (ja) * | 2015-04-13 | 2019-06-19 | 信越化学工業株式会社 | 新規オニウム塩化合物を用いた化学増幅型ネガ型レジスト組成物及びレジストパターン形成方法 |
-
2017
- 2017-03-17 JP JP2017052453A patent/JP6645464B2/ja active Active
-
2018
- 2018-03-14 US US15/920,744 patent/US10613437B2/en active Active
- 2018-03-14 TW TW107108526A patent/TWI664496B/zh active
- 2018-03-15 KR KR1020180030264A patent/KR102078912B1/ko active IP Right Grant
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005170808A (ja) * | 2003-12-09 | 2005-06-30 | Hodogaya Chem Co Ltd | スルホン酸オニウム塩化合物、該化合物の製造方法、該化合物を用いた感光性樹脂組成物および感光性材料 |
US20090181319A1 (en) * | 2008-01-16 | 2009-07-16 | International Business Machines Corporation | Aromatic fluorine-free photoacid generators and photoresist compositions containing the same |
JP2010106236A (ja) * | 2008-10-30 | 2010-05-13 | Korea Kumho Petrochem Co Ltd | 芳香族環を含む酸発生剤 |
JP2010155824A (ja) * | 2008-12-04 | 2010-07-15 | Shin-Etsu Chemical Co Ltd | スルホニウム塩、酸発生剤及びこれを用いたレジスト材料、フォトマスクブランク、並びにパターン形成方法 |
JP2015034963A (ja) * | 2013-07-10 | 2015-02-19 | 富士フイルム株式会社 | 化合物、感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスク及びパターン形成方法、並びに、電子デバイスの製造方法及び電子デバイス |
JP2015062057A (ja) * | 2013-08-20 | 2015-04-02 | Jsr株式会社 | 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生剤及び化合物 |
JP2016065016A (ja) * | 2014-09-25 | 2016-04-28 | 信越化学工業株式会社 | スルホニウム塩、レジスト組成物及びレジストパターン形成方法 |
WO2016201125A1 (en) * | 2015-06-12 | 2016-12-15 | Nutech Ventures | Radioiodinated bioconjugation reagents |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019094323A (ja) * | 2017-11-20 | 2019-06-20 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | ヨウ素含有光酸発生剤及びそれを含む組成物 |
JP7353124B2 (ja) | 2018-10-19 | 2023-09-29 | 住友化学株式会社 | 化合物、レジスト組成物及びレジストパターンの製造方法 |
JP2020083760A (ja) * | 2018-11-15 | 2020-06-04 | 信越化学工業株式会社 | 新規塩化合物、化学増幅レジスト組成物、及びパターン形成方法 |
JP7056524B2 (ja) | 2018-11-15 | 2022-04-19 | 信越化学工業株式会社 | 新規塩化合物、化学増幅レジスト組成物、及びパターン形成方法 |
US11435666B2 (en) | 2018-11-15 | 2022-09-06 | Shin-Etsu Chemical Co., Ltd. | Salt compound, chemically amplified resist composition, and patterning process |
JP7354986B2 (ja) | 2019-11-20 | 2023-10-03 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
WO2023017702A1 (ja) * | 2021-08-12 | 2023-02-16 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法及び電子デバイスの製造方法 |
KR20240057361A (ko) | 2022-10-24 | 2024-05-02 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 레지스트 재료 및 패턴 형성 방법 |
Also Published As
Publication number | Publication date |
---|---|
US10613437B2 (en) | 2020-04-07 |
TWI664496B (zh) | 2019-07-01 |
KR20180106938A (ko) | 2018-10-01 |
US20180267402A1 (en) | 2018-09-20 |
JP6645464B2 (ja) | 2020-02-14 |
KR102078912B1 (ko) | 2020-02-19 |
TW201839510A (zh) | 2018-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6702264B2 (ja) | レジスト材料及びパターン形成方法 | |
JP6645464B2 (ja) | レジスト材料及びパターン形成方法 | |
JP6904302B2 (ja) | レジスト材料及びパターン形成方法 | |
JP6769414B2 (ja) | レジスト材料及びパターン形成方法 | |
JP6459989B2 (ja) | レジスト材料及びパターン形成方法 | |
JP6927176B2 (ja) | レジスト材料及びパターン形成方法 | |
JP6645463B2 (ja) | レジスト材料及びパターン形成方法 | |
JP7147707B2 (ja) | 化学増幅レジスト材料及びパターン形成方法 | |
JP2018060069A (ja) | レジスト材料及びパターン形成方法 | |
JP2018087971A (ja) | 化学増幅レジスト材料及びパターン形成方法 | |
JP2018197853A (ja) | レジスト材料及びパターン形成方法 | |
JP6512049B2 (ja) | レジスト材料及びパターン形成方法 | |
JP6583167B2 (ja) | レジスト材料及びパターン形成方法 | |
JP2020098330A (ja) | レジスト材料及びパターン形成方法 | |
JP2018055089A (ja) | レジスト材料及びパターン形成方法 | |
JP6575474B2 (ja) | レジスト材料及びパターン形成方法 | |
JP6772992B2 (ja) | レジスト材料及びパターン形成方法 | |
JP2020122957A (ja) | レジスト材料及びパターン形成方法 | |
JP6477409B2 (ja) | レジスト材料及びパターン形成方法 | |
JP6531725B2 (ja) | レジスト材料及びパターン形成方法 | |
JP6583168B2 (ja) | レジスト材料及びパターン形成方法 | |
JP2018136527A (ja) | レジスト材料及びパターン形成方法 | |
JP2019211751A (ja) | レジスト材料及びパターン形成方法 | |
JP2019074588A (ja) | レジスト材料及びパターン形成方法 | |
JP6372460B2 (ja) | レジスト材料及びパターン形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190124 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191113 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191210 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191223 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6645464 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |