JP2018134710A5 - - Google Patents
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- JP2018134710A5 JP2018134710A5 JP2017031243A JP2017031243A JP2018134710A5 JP 2018134710 A5 JP2018134710 A5 JP 2018134710A5 JP 2017031243 A JP2017031243 A JP 2017031243A JP 2017031243 A JP2017031243 A JP 2017031243A JP 2018134710 A5 JP2018134710 A5 JP 2018134710A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- substrate
- polishing pad
- polishing apparatus
- movement direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 claims description 800
- 239000000758 substrate Substances 0.000 claims description 395
- 238000004140 cleaning Methods 0.000 claims description 58
- 238000001514 detection method Methods 0.000 claims description 38
- 239000007788 liquid Substances 0.000 claims description 31
- 230000003750 conditioning Effects 0.000 claims description 27
- 238000009826 distribution Methods 0.000 claims description 20
- 238000003825 pressing Methods 0.000 claims description 14
- 230000000875 corresponding Effects 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 10
- 230000001276 controlling effect Effects 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000005296 abrasive Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 40
- 239000000463 material Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 10
- 238000007517 polishing process Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 230000001143 conditioned Effects 0.000 description 3
- 238000011068 load Methods 0.000 description 3
- 239000003550 marker Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000003287 optical Effects 0.000 description 2
- 230000002093 peripheral Effects 0.000 description 2
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000009376 nuclear reprocessing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017031243A JP2018134710A (ja) | 2017-02-22 | 2017-02-22 | 基板の研磨装置および研磨方法 |
TW107104944A TW201900338A (zh) | 2017-02-22 | 2018-02-12 | 基板的研磨裝置和基板處理系統 |
CN201810151773.8A CN108453618A (zh) | 2017-02-22 | 2018-02-14 | 基板的研磨装置和基板的处理系统 |
KR1020180019296A KR20180097136A (ko) | 2017-02-22 | 2018-02-19 | 기판의 연마 장치 및 연마 방법 |
US15/900,140 US20180236630A1 (en) | 2017-02-22 | 2018-02-20 | Substrate polisher and polishing method |
SG10201801373RA SG10201801373RA (en) | 2017-02-22 | 2018-02-20 | Substrate polisher and polishing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017031243A JP2018134710A (ja) | 2017-02-22 | 2017-02-22 | 基板の研磨装置および研磨方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018134710A JP2018134710A (ja) | 2018-08-30 |
JP2018134710A5 true JP2018134710A5 (ko) | 2020-01-09 |
Family
ID=63166818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017031243A Pending JP2018134710A (ja) | 2017-02-22 | 2017-02-22 | 基板の研磨装置および研磨方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180236630A1 (ko) |
JP (1) | JP2018134710A (ko) |
KR (1) | KR20180097136A (ko) |
CN (1) | CN108453618A (ko) |
SG (1) | SG10201801373RA (ko) |
TW (1) | TW201900338A (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6884015B2 (ja) * | 2017-03-22 | 2021-06-09 | 株式会社荏原製作所 | 基板の研磨装置および研磨方法 |
CN109227388A (zh) * | 2018-09-19 | 2019-01-18 | 大连理工大学 | 一种环抛机盘面修整系统及其工作方法 |
JP7145084B2 (ja) * | 2019-01-11 | 2022-09-30 | 株式会社荏原製作所 | 基板処理装置および基板処理装置において部分研磨されるべき領域を特定する方法 |
US11235454B2 (en) * | 2019-01-14 | 2022-02-01 | Dynabrade, Inc. | Spring loaded adjustable head |
JP7317532B2 (ja) * | 2019-03-19 | 2023-07-31 | キオクシア株式会社 | 研磨装置及び研磨方法 |
TWI834195B (zh) | 2019-04-18 | 2024-03-01 | 美商應用材料股份有限公司 | Cmp期間基於溫度的原位邊緣不對稱校正的電腦可讀取儲存媒體 |
TWI797501B (zh) | 2019-11-22 | 2023-04-01 | 美商應用材料股份有限公司 | 在拋光墊中使用溝槽的晶圓邊緣不對稱校正 |
JP7442314B2 (ja) * | 2019-12-24 | 2024-03-04 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
JP7387471B2 (ja) * | 2020-02-05 | 2023-11-28 | 株式会社荏原製作所 | 基板処理装置および基板処理方法 |
JP7341918B2 (ja) * | 2020-02-06 | 2023-09-11 | 株式会社荏原製作所 | 基板処理装置および基板処理方法 |
CN111482891A (zh) * | 2020-04-20 | 2020-08-04 | 北京烁科精微电子装备有限公司 | 一种化学机械平坦化设备 |
JP7530237B2 (ja) * | 2020-08-17 | 2024-08-07 | キオクシア株式会社 | 研磨装置および研磨方法 |
CN114012605B (zh) * | 2022-01-05 | 2022-05-17 | 杭州众硅电子科技有限公司 | 一种抛光垫修整装置 |
CN116460667B (zh) * | 2022-12-30 | 2023-11-07 | 北京创思工贸有限公司 | 氟化钙光学零件的加工方法 |
Family Cites Families (26)
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US3943666A (en) * | 1974-07-31 | 1976-03-16 | Dysan Corporation | Method and apparatus for burnishing flexible recording material |
US4347689A (en) * | 1980-10-20 | 1982-09-07 | Verbatim Corporation | Method for burnishing |
JPS59173555U (ja) * | 1984-01-17 | 1984-11-20 | 株式会社ノリタケカンパニーリミテド | 研削砥石を傾斜させた研削装置に用いられる傾斜フランジ |
US4958463A (en) * | 1988-06-06 | 1990-09-25 | United Technologies Corporation | Optical surface quality improving arrangement |
JPH033765A (ja) * | 1989-05-29 | 1991-01-09 | Sony Corp | 剛性基板の表面処理方法 |
JPH04322964A (ja) * | 1991-04-22 | 1992-11-12 | Amada Washino Co Ltd | 研削制御装置 |
JPH074750B2 (ja) * | 1992-12-03 | 1995-01-25 | 株式会社松田精機 | フイルム研磨材を用いた平面研磨装置 |
JP3020800B2 (ja) * | 1994-05-16 | 2000-03-15 | 株式会社ノリタケカンパニーリミテド | 疵取り用研削装置 |
JPH0811042A (ja) * | 1994-06-30 | 1996-01-16 | Nippondenso Co Ltd | 平面研削加工方法 |
JPH0947947A (ja) * | 1994-08-30 | 1997-02-18 | Seiko Seiki Co Ltd | 研削装置、並びに研削方法、並びに半導体装置及び半導体基板の製造方法 |
JPH08108360A (ja) * | 1994-10-11 | 1996-04-30 | Fuji Photo Film Co Ltd | ガラス基板の研磨装置 |
JPH10329015A (ja) * | 1997-03-24 | 1998-12-15 | Canon Inc | 研磨装置および研磨方法 |
JPH11285978A (ja) * | 1998-04-03 | 1999-10-19 | Ebara Corp | 砥石の保持構造及び研磨装置 |
JP3652163B2 (ja) * | 1999-03-15 | 2005-05-25 | キヤノン株式会社 | 研磨方法 |
JP2001353659A (ja) * | 2000-06-16 | 2001-12-25 | Okamoto Machine Tool Works Ltd | 研磨ウエハの研磨合否判定方法 |
US6811680B2 (en) * | 2001-03-14 | 2004-11-02 | Applied Materials Inc. | Planarization of substrates using electrochemical mechanical polishing |
JP2003282493A (ja) * | 2001-08-14 | 2003-10-03 | Sony Corp | 研磨装置および研磨方法 |
US6875086B2 (en) * | 2003-01-10 | 2005-04-05 | Intel Corporation | Surface planarization |
CN1822905A (zh) * | 2003-06-06 | 2006-08-23 | P.C.T.系统公司 | 用兆频声波能量处理基片的方法和设备 |
JP2005177925A (ja) * | 2003-12-19 | 2005-07-07 | Olympus Corp | 研磨加工方法 |
JP4406772B2 (ja) * | 2005-04-01 | 2010-02-03 | 株式会社サンシン | 板状部材表面傷修復装置 |
JP2009190109A (ja) * | 2008-02-13 | 2009-08-27 | Lasertec Corp | 基板保持装置及び基板加工装置 |
JP5369478B2 (ja) * | 2008-04-11 | 2013-12-18 | 株式会社ニコン | 研磨装置 |
US9393669B2 (en) * | 2011-10-21 | 2016-07-19 | Strasbaugh | Systems and methods of processing substrates |
US10065288B2 (en) | 2012-02-14 | 2018-09-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing (CMP) platform for local profile control |
CN103231303B (zh) * | 2013-05-15 | 2016-02-24 | 清华大学 | 化学机械抛光设备 |
-
2017
- 2017-02-22 JP JP2017031243A patent/JP2018134710A/ja active Pending
-
2018
- 2018-02-12 TW TW107104944A patent/TW201900338A/zh unknown
- 2018-02-14 CN CN201810151773.8A patent/CN108453618A/zh active Pending
- 2018-02-19 KR KR1020180019296A patent/KR20180097136A/ko not_active Application Discontinuation
- 2018-02-20 SG SG10201801373RA patent/SG10201801373RA/en unknown
- 2018-02-20 US US15/900,140 patent/US20180236630A1/en not_active Abandoned
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