JP7317532B2 - 研磨装置及び研磨方法 - Google Patents
研磨装置及び研磨方法 Download PDFInfo
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- JP7317532B2 JP7317532B2 JP2019052002A JP2019052002A JP7317532B2 JP 7317532 B2 JP7317532 B2 JP 7317532B2 JP 2019052002 A JP2019052002 A JP 2019052002A JP 2019052002 A JP2019052002 A JP 2019052002A JP 7317532 B2 JP7317532 B2 JP 7317532B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- polishing
- elastic body
- semiconductor wafer
- rotating shaft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
- B24D13/02—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by their periphery
- B24D13/12—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by their periphery comprising assemblies of felted or spongy material, e.g. felt, steel wool, foamed latex
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
Description
第1の実施形態の研磨装置は、基板を保持する保持部と、基板の表面に研磨剤を供給する供給部と、弾性体を用いて基板の表面を研磨する研磨部であって、弾性体と基板の表面との接触面積が基板の表面積よりも小さく、研磨中の弾性体の速度ベクトルの基板の表面の法線方向成分の方向が、弾性体が基板の表面に接触する前後で逆転する研磨部と、を備える。
第2の実施形態の研磨装置は、保持部を回転させることにより、基板を基板の中心を回転中心として回転させる第2の回転機構を、更に備える点で、第1の実施形態と異なっている。また、第2の実施形態の研磨方法は、基板を基板の中心を回転中心として回転させる点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第3の実施形態の研磨装置は、研磨部を複数有する点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第4の実施形態の研磨装置は、弾性体の長さが、基板の最大長さよりも長い点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については、一部記述を省略する。
14 研磨剤供給ノズル(供給部)
16 研磨部
16a 研磨パッド(弾性体)
18 第1の回転機構
20 移動機構
26 第2の回転機構
100 研磨装置
200 研磨装置
300 研磨装置
400 研磨装置
W 半導体ウェハ(基板)
Claims (12)
- 基板を保持し、固定された保持部と、
前記基板の表面に研磨剤を供給する供給部と、
前記基板の表面に平行な方向に延びる回転軸と、前記回転軸の周囲に設けられた弾性体を有し、前記弾性体が前記回転軸を中心として回転することにより前記基板の表面を研磨する研磨部であって、研磨中の前記弾性体と前記基板の表面との接触面積が前記基板の表面積よりも小さく、研磨中の前記弾性体の速度ベクトルの前記基板の表面の法線方向成分の方向が、前記弾性体が前記基板の表面に接触する前後で逆転し、前記弾性体の前記回転軸の延びる方向の長さが前記基板の前記回転軸の延びる方向の最大長さより長い、研磨部と、
前記研磨部を、前記基板の表面に平行な方向に前記基板に対して移動させる移動機構と、
を備える研磨装置。 - 前記弾性体は前記基板の表面に垂直な断面において円又は楕円であり、前記弾性体を回転させる第1の回転機構を、更に備える請求項1記載の研磨装置。
- 前記弾性体の貯蔵弾性率は、0.01GPa以上10GPa以下である請求項1又は請求項2記載の研磨装置。
- 前記弾性体は、樹脂又は不織布を含む請求項1ないし請求項3いずれか一項記載の研磨装置。
- 前記研磨剤は、砥粒を含む請求項1ないし請求項4いずれか一項記載の研磨装置。
- 前記研磨部を複数有する請求項1ないし請求項5いずれか一項記載の研磨装置。
- 固定された保持部の上に基板を載置し、
前記基板の表面に研磨剤を供給し、
前記基板の表面に平行な方向に延びる回転軸の周囲に設けられ、前記回転軸の延びる方向の長さが前記基板の前記回転軸の延びる方向の最大長さより長い弾性体を、前記基板の表面積よりも接触面積が小さくなるように、前記基板の表面に接触させ、
前記弾性体が前記回転軸を中心として回転することにより、前記弾性体の速度ベクトルの前記基板の表面の法線方向成分の方向が、前記弾性体が前記基板の表面に接触する前後で逆転するように前記弾性体を動かし、前記基板の表面に平行な方向に前記基板に対して前記弾性体を移動させて前記基板の表面を研磨する研磨方法。 - 前記弾性体の表面は前記基板の表面に垂直な断面において円又は楕円である請求項7記載の研磨方法。
- 前記弾性体が前記基板に接触する部分の前記回転軸に垂直な方向の幅が、前記基板に形成されたパターンの最小寸法以下である請求項8記載の研磨方法。
- 前記弾性体の任意の一点が前記基板に接触する間に移動する前記基板の表面での距離が、前記基板に形成されたパターンの最小寸法以下である請求項7又は請求項8記載の研磨方法。
- 前記弾性体は、樹脂又は不織布を含む請求項7ないし請求項10いずれか一項記載の研磨方法。
- 前記研磨剤は、砥粒を含む請求項7ないし請求項11いずれか一項記載の研磨方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019052002A JP7317532B2 (ja) | 2019-03-19 | 2019-03-19 | 研磨装置及び研磨方法 |
TW108125946A TWI785259B (zh) | 2019-03-19 | 2019-07-23 | 研磨裝置及研磨方法 |
CN201910684392.0A CN111716253A (zh) | 2019-03-19 | 2019-07-26 | 研磨装置及研磨方法 |
US16/557,070 US20200298363A1 (en) | 2019-03-19 | 2019-08-30 | Polishing device and polishing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019052002A JP7317532B2 (ja) | 2019-03-19 | 2019-03-19 | 研磨装置及び研磨方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020151801A JP2020151801A (ja) | 2020-09-24 |
JP7317532B2 true JP7317532B2 (ja) | 2023-07-31 |
Family
ID=72515085
Family Applications (1)
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JP2019052002A Active JP7317532B2 (ja) | 2019-03-19 | 2019-03-19 | 研磨装置及び研磨方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20200298363A1 (ja) |
JP (1) | JP7317532B2 (ja) |
CN (1) | CN111716253A (ja) |
TW (1) | TWI785259B (ja) |
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JP2003509852A (ja) | 1999-09-13 | 2003-03-11 | ラム リサーチ コーポレーション | 円筒形の研磨パッドを用いた化学機械研磨の方法およびシステム |
JP2003282493A (ja) | 2001-08-14 | 2003-10-03 | Sony Corp | 研磨装置および研磨方法 |
JP2004140215A (ja) | 2002-10-18 | 2004-05-13 | Toyobo Co Ltd | 研磨パッドの製造方法及び研磨パッド |
US20040166785A1 (en) | 2003-01-10 | 2004-08-26 | Golzarian Reza M. | Polishing pad conditioning |
KR100508082B1 (ko) | 1997-11-06 | 2005-11-08 | 삼성전자주식회사 | 폴리싱장치 |
JP2013141716A (ja) | 2012-01-10 | 2013-07-22 | Kuraray Co Ltd | 研磨パッド、及び研磨パッドを用いた化学的機械的研磨方法 |
JP2018134710A (ja) | 2017-02-22 | 2018-08-30 | 株式会社荏原製作所 | 基板の研磨装置および研磨方法 |
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2019
- 2019-03-19 JP JP2019052002A patent/JP7317532B2/ja active Active
- 2019-07-23 TW TW108125946A patent/TWI785259B/zh active
- 2019-07-26 CN CN201910684392.0A patent/CN111716253A/zh active Pending
- 2019-08-30 US US16/557,070 patent/US20200298363A1/en not_active Abandoned
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JP2003282493A (ja) | 2001-08-14 | 2003-10-03 | Sony Corp | 研磨装置および研磨方法 |
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Also Published As
Publication number | Publication date |
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TW202036696A (zh) | 2020-10-01 |
JP2020151801A (ja) | 2020-09-24 |
TWI785259B (zh) | 2022-12-01 |
CN111716253A (zh) | 2020-09-29 |
US20200298363A1 (en) | 2020-09-24 |
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