TWI785259B - 研磨裝置及研磨方法 - Google Patents

研磨裝置及研磨方法 Download PDF

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Publication number
TWI785259B
TWI785259B TW108125946A TW108125946A TWI785259B TW I785259 B TWI785259 B TW I785259B TW 108125946 A TW108125946 A TW 108125946A TW 108125946 A TW108125946 A TW 108125946A TW I785259 B TWI785259 B TW I785259B
Authority
TW
Taiwan
Prior art keywords
substrate
elastic body
polishing
mentioned
semiconductor wafer
Prior art date
Application number
TW108125946A
Other languages
English (en)
Chinese (zh)
Other versions
TW202036696A (zh
Inventor
側瀬聡文
Original Assignee
日商鎧俠股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商鎧俠股份有限公司 filed Critical 日商鎧俠股份有限公司
Publication of TW202036696A publication Critical patent/TW202036696A/zh
Application granted granted Critical
Publication of TWI785259B publication Critical patent/TWI785259B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
    • B24D13/02—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by their periphery
    • B24D13/12—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by their periphery comprising assemblies of felted or spongy material, e.g. felt, steel wool, foamed latex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
TW108125946A 2019-03-19 2019-07-23 研磨裝置及研磨方法 TWI785259B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019052002A JP7317532B2 (ja) 2019-03-19 2019-03-19 研磨装置及び研磨方法
JP2019-052002 2019-03-19

Publications (2)

Publication Number Publication Date
TW202036696A TW202036696A (zh) 2020-10-01
TWI785259B true TWI785259B (zh) 2022-12-01

Family

ID=72515085

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108125946A TWI785259B (zh) 2019-03-19 2019-07-23 研磨裝置及研磨方法

Country Status (4)

Country Link
US (1) US20200298363A1 (ja)
JP (1) JP7317532B2 (ja)
CN (1) CN111716253A (ja)
TW (1) TWI785259B (ja)

Citations (3)

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US20030032372A1 (en) * 1993-11-16 2003-02-13 Homayoun Talieh Substrate polishing apparatus
US20060060569A1 (en) * 2004-09-17 2006-03-23 Jsr Corporation Chemical mechanical polishing pad and chemical mechanical polishing process
US20160056060A1 (en) * 2014-08-20 2016-02-25 Kabushiki Kaisha Toshiba Cleaning member, cleaning apparatus, and cleaning method

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US3280516A (en) * 1964-06-09 1966-10-25 Tennant Co G H Abrasive roll
JPS6067842U (ja) * 1983-10-17 1985-05-14 日本電気株式会社 ウエハ研ま装置
KR100189970B1 (ko) * 1995-08-07 1999-06-01 윤종용 웨이퍼 연마장치
JP2830907B2 (ja) * 1995-12-06 1998-12-02 日本電気株式会社 半導体基板研磨装置
KR100219368B1 (ko) * 1996-06-05 1999-09-01 이경수 반도체기판의 표면을 연마하는 반도체제조장치
US6328642B1 (en) * 1997-02-14 2001-12-11 Lam Research Corporation Integrated pad and belt for chemical mechanical polishing
JP3427670B2 (ja) * 1997-04-22 2003-07-22 ソニー株式会社 研磨装置および研磨方法
KR100508082B1 (ko) 1997-11-06 2005-11-08 삼성전자주식회사 폴리싱장치
US6406363B1 (en) * 1999-08-31 2002-06-18 Lam Research Corporation Unsupported chemical mechanical polishing belt
US6347977B1 (en) 1999-09-13 2002-02-19 Lam Research Corporation Method and system for chemical mechanical polishing
JP3847500B2 (ja) * 1999-10-08 2006-11-22 株式会社日立製作所 半導体ウェハ平坦化加工方法および平坦化加工装置
US6609946B1 (en) * 2000-07-14 2003-08-26 Advanced Micro Devices, Inc. Method and system for polishing a semiconductor wafer
JP2003282493A (ja) 2001-08-14 2003-10-03 Sony Corp 研磨装置および研磨方法
US7121919B2 (en) * 2001-08-30 2006-10-17 Micron Technology, Inc. Chemical mechanical polishing system and process
JP4149231B2 (ja) 2002-10-18 2008-09-10 東洋ゴム工業株式会社 研磨パッドの製造方法及び研磨パッド
US6976907B2 (en) 2003-01-10 2005-12-20 Intel Corporation Polishing pad conditioning
JP2008198668A (ja) * 2007-02-08 2008-08-28 Sony Corp 平坦化研磨方法及び半導体装置の製造方法
US20110028074A1 (en) * 2009-08-03 2011-02-03 Canon Kabushiki Kaisha Polishing method for a workpiece and polishing tool used for the polishing method
JP5789523B2 (ja) 2012-01-10 2015-10-07 株式会社クラレ 研磨パッド、及び研磨パッドを用いた化学的機械的研磨方法
US20130217228A1 (en) * 2012-02-21 2013-08-22 Masako Kodera Method for fabricating semiconductor device
JP6538549B2 (ja) * 2015-12-25 2019-07-03 東芝メモリ株式会社 パターン形成方法
JP2018134710A (ja) * 2017-02-22 2018-08-30 株式会社荏原製作所 基板の研磨装置および研磨方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030032372A1 (en) * 1993-11-16 2003-02-13 Homayoun Talieh Substrate polishing apparatus
US20060060569A1 (en) * 2004-09-17 2006-03-23 Jsr Corporation Chemical mechanical polishing pad and chemical mechanical polishing process
US20160056060A1 (en) * 2014-08-20 2016-02-25 Kabushiki Kaisha Toshiba Cleaning member, cleaning apparatus, and cleaning method

Also Published As

Publication number Publication date
CN111716253A (zh) 2020-09-29
US20200298363A1 (en) 2020-09-24
JP2020151801A (ja) 2020-09-24
TW202036696A (zh) 2020-10-01
JP7317532B2 (ja) 2023-07-31

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