US20200298363A1 - Polishing device and polishing method - Google Patents
Polishing device and polishing method Download PDFInfo
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- US20200298363A1 US20200298363A1 US16/557,070 US201916557070A US2020298363A1 US 20200298363 A1 US20200298363 A1 US 20200298363A1 US 201916557070 A US201916557070 A US 201916557070A US 2020298363 A1 US2020298363 A1 US 2020298363A1
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- substrate
- elastic body
- polishing
- polishing device
- contact
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- 238000005498 polishing Methods 0.000 title claims abstract description 172
- 238000000034 method Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 230000007246 mechanism Effects 0.000 claims description 34
- 238000003860 storage Methods 0.000 claims description 7
- 239000006061 abrasive grain Substances 0.000 claims description 4
- 239000004745 nonwoven fabric Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 87
- 230000007547 defect Effects 0.000 description 36
- 238000010586 diagram Methods 0.000 description 18
- 239000002002 slurry Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010008 shearing Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
- B24D13/02—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by their periphery
- B24D13/12—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by their periphery comprising assemblies of felted or spongy material, e.g. felt, steel wool, foamed latex
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
Definitions
- Embodiments described herein relate generally to a polishing device and a polishing method.
- Semiconductor devices such as memory devices and logic devices, are manufactured by depositing films on a substrate and etching films repeatedly to form a desired circuit pattern on the substrate.
- a convex defect which protrudes from the surface of the substrate, may be occasionally formed on the substrate.
- an unfavorable situation arises in a lithography step for forming a circuit pattern to hinder formation of the circuit pattern as desired.
- this situation becomes more serious as a minimum size of circuit patterns decreases in accordance with progress in microfabrication of semiconductor devices.
- FIGS. 1A and 1B are schematic diagrams illustrating a polishing device according to a first embodiment.
- FIG. 2 is a diagram illustrating a polisher of the polishing device according to the first embodiment.
- FIGS. 3A to 3C are diagrams illustrating functions and effects of the polishing device and a polishing method according to the first embodiment.
- FIGS. 4 and 5 are diagrams illustrating functions and effects of the polishing method according to the first embodiment.
- FIGS. 6A and 6B are schematic diagrams illustrating a polishing device according to a second embodiment.
- FIGS. 7A and 7B are schematic diagrams illustrating a polishing device according to a third embodiment.
- FIGS. 8A and 8B are schematic diagrams illustrating a polishing device according to a fourth embodiment.
- Embodiments provide a polishing device and a polishing method that effectively remove convex defects on a surface of a substrate.
- a polishing device in general, includes a substrate holder, a dispenser configured to dispense an abrasive to a surface of a substrate held by the substrate holder, a polisher including an elastic body configured to polish the surface of the substrate as the elastic body is rotated with respect to the surface of the substrate.
- An area of contact between the elastic body and the surface of the substrate during polishing is smaller than a surface area of a region of the substrate that is to be polished by the elastic body.
- the elastic body is moved, while the elastic body is rotated, with a downward velocity component prior to contacting the surface of the substrate and with an upward velocity component after the elastic body comes into contact with the surface of the substrate.
- a polishing device includes: a holder configured to hold a substrate; a dispenser configured to dispense abrasive to a surface of the substrate; and a polisher including an elastic body and configured to polish the surface of the substrate using the elastic body.
- An area of contact between the elastic body and the surface of the substrate is smaller than a surface area of the substrate.
- a direction of a component of a velocity vector of the elastic body in polishing in a normal direction of the surface of the substrate is reversed after the elastic body comes into contact with the surface of the substrate.
- a polishing method includes: dispensing abrasive to a surface of a substrate; bringing an elastic body into contact with the surface of the substrate in such a manner that an area of contact between the elastic body and the surface of the substrate is smaller than a surface area of the substrate; and moving the elastic body in such a manner that a direction of a component of a velocity vector of the elastic body in a normal direction of the surface of the substrate is reversed after the elastic body comes into contact with the surface of the substrate so as to polish the surface of the substrate.
- FIGS. 1A and 1B are schematic diagrams illustrating the polishing device according to the first embodiment.
- FIG. 1A illustrates a cross-sectional view of the polishing device
- FIG. 1B illustrates a top view of the polishing device.
- a polishing device 100 according to the first embodiment polishes a surface of a substrate such as a semiconductor wafer.
- the polishing device 100 includes a stage 10 (also referred to as the holder), a support shaft 12 , an abrasive dispensing nozzle 14 (also referred to as the dispenser), a polisher 16 , a first rotation mechanism 18 , a movement mechanism 20 , a housing 22 , and a controller 24 .
- the polisher 16 includes a polishing pad 16 a (also referred to as the elastic body) and a rotation shaft 16 b.
- a semiconductor wafer W (also referred to as the substrate) to be polished is placed on the stage 10 .
- the semiconductor wafer W is secured on the stage 10 by, for example, vacuum suction from a rear surface side.
- a front surface of the semiconductor wafer W faces upward. That is, the front surface of the semiconductor wafer W is on an opposite side to the stage 10 side.
- the support shaft 12 supports the stage 10 .
- the support shaft 12 secures the stage 10 .
- the abrasive dispensing nozzle 14 dispenses slurry to the front surface of the semiconductor wafer W.
- the slurry is an example of the abrasive.
- the slurry includes abrasive grains.
- the abrasive grains are particles including silicon oxide, aluminum oxide, or cerium oxide, for example.
- the polisher 16 is disposed on the semiconductor wafer W side of the stage 10 .
- the polisher 16 polishes the front surface of the semiconductor wafer W.
- the polisher 16 includes the polishing pad 16 a and the rotation shaft 16 b .
- the polishing pad 16 a is disposed around the rotation shaft 16 b.
- the polishing pad 16 a is an example of the elastic body.
- An storage modulus of the polishing pad 16 a is, for example, equal to or higher than 0.01 GPa and equal to or less than 10 GPa.
- the storage modulus of the polishing pad 16 a is measured by a method provided in JIS K7244-4 “Plastics—Determination of dynamic mechanical properties—Part 4: Tensile vibration —Non-resonance method”.
- the polishing pad 16 a includes resin or non-woven fabric, for example.
- the polishing pad 16 a is made of a material such as polyurethane resin.
- the polishing pad 16 a is circular or elliptic in cross-section perpendicular to the front surface of the semiconductor wafer W.
- FIG. 1A illustrates a case where a surface of the polishing pad 16 a is circular in cross-section perpendicular to the front surface of the semiconductor wafer W.
- the rotation shaft 16 b extends in a direction parallel to a surface of the stage 10 .
- the rotation shaft 16 b is parallel to the front surface of the semiconductor wafer W. Rotation of the rotation shaft 16 b causes the polishing pad 16 a to rotate about the rotation shaft 16 b in a circumferential direction of the polishing pad 16 a .
- the polishing pad 16 a makes rotary movement.
- FIG. 2 is a diagram illustrating the polisher 16 of the polishing device 100 according to the first embodiment.
- FIG. 2 is an enlarged view of the polisher 16 and the front surface of the semiconductor wafer W.
- FIG. 2 illustrates a state where the front surface of the semiconductor wafer W is being polished.
- FIG. 2 illustrates a state of the polishing pad 16 a in contact with the front surface of the semiconductor wafer W.
- the polishing pad 16 a comes into contact with the front surface of the semiconductor wafer W, the polishing pad 16 a is elastically deformed.
- a contact portion (S in FIG. 2 ) where the polishing pad 16 a polishing the front surface of the semiconductor wafer W is in contact with the front surface of the semiconductor wafer W has a contact area smaller than a surface area of the semiconductor wafer W. In other words, the polishing pad 16 a is only in contact with part of the front surface of the semiconductor wafer W.
- a minimum width (Wmin) of the contact portion S is, for example, equal to or less than 1/100 of a diameter of the semiconductor wafer W.
- a direction of a component of a velocity vector of the polishing pad 16 a in polishing in a normal direction of the front surface of the semiconductor wafer W is reversed after the polishing pad 16 a comes into contact with the front surface of the semiconductor wafer W.
- a velocity vector before the polishing pad 16 a in rotation comes into contact with the front surface of the semiconductor wafer W is a vector Va in FIG. 2 .
- a velocity vector after the polishing pad 16 a in rotation comes into contact with the front surface of the semiconductor wafer W is a vector Vb in FIG. 2 .
- a component of the vector Va in the normal direction of the front surface of the semiconductor wafer W is a vector Vax in FIG. 2 .
- a component of the vector Vb in the normal direction of the front surface of the semiconductor wafer W is a vector Vbx in FIG. 2 .
- the vector Vax and the vector Vbx have reversed directions.
- the first rotation mechanism. 18 causes the polishing pad 16 a to rotate about the rotation shaft 16 b in the circumferential direction of the polishing pad 16 a .
- the first rotation mechanism 18 includes components such as a motor and a bearing to rotatably hold the rotation shaft 16 b.
- the movement mechanism 20 causes the polisher 16 to move relative to the semiconductor wafer W in directions parallel to the front surface of the semiconductor wafer W.
- the movement mechanism 20 moves the polisher 16 in the directions parallel to the front surface of the semiconductor wafer W.
- the front surface of the semiconductor wafer W can be wholly polished.
- the movement mechanism 20 includes components such as a motor and a conversion mechanism to convert rotary motion of the motor into linear motion.
- the housing 22 contains components such as the stage 10 , the support shaft 12 , the abrasive dispensing nozzle 14 (the dispenser), the polisher 16 , the first rotation mechanism 18 , and the movement mechanism 20 .
- the housing 22 protects components such as the stage 10 , the support shaft 12 , the abrasive dispensing nozzle 14 (the dispenser), the polisher 16 , the first rotation mechanism 18 , and the movement mechanism 20 .
- the controller 24 controls the abrasive dispensing nozzle 14 , the polisher 16 , the first rotation mechanism 18 , and the movement mechanism 20 .
- the controller 24 controls a dispensing start and end of the slurry from the abrasive dispensing nozzle 14 and a dispensing amount of the slurry.
- the controller 24 respectively controls the first rotation mechanism 18 and the movement mechanism. 20 to control a rotation speed and a movement speed of the polishing pad 16 a .
- the controller 24 may be hardware such as a circuit board or a combination of hardware and software such as a control program stored in a memory.
- polishing method according to the first embodiment will be described.
- a case of using the polishing device 100 according to the first embodiment will be described as an example.
- the front surface of the semiconductor wafer W is polished.
- a circuit pattern is formed on the semiconductor wafer W to be polished, for example, by depositing films and etching films repeatedly. At least one of an insulating film and a conductive film, for example, is exposed on the front surface of the semiconductor wafer W to be polished.
- the semiconductor wafer W is conveyed into the housing 22 and placed on the stage 10 .
- the semiconductor wafer W is secured on the stage 10 by, for example, vacuum suction from the rear surface side.
- the slurry is dispensed to the front surface of the semiconductor wafer W.
- the slurry is dispensed from the abrasive dispensing nozzle 14 .
- the contact portion (S in FIG. 2 ) where the polishing pad 16 a is in contact with the front surface of the semiconductor wafer W has a contact area smaller than the surface area of the semiconductor wafer W.
- the polishing pad 16 a is rotated about the rotation shaft 16 b in the circumferential direction of the polishing pad 16 a .
- the direction of the component of the velocity vector of the polishing pad 16 a in polishing in the normal direction of the front surface of the semiconductor wafer W is reversed after the polishing pad 16 a comes into contact with the front surface of the semiconductor wafer W.
- the front surface of the semiconductor wafer W is polished by the polishing pad 16 a .
- a surface of the polishing pad 16 a has a plurality of uneven portions. While the front surface of the semiconductor wafer W is being polished, the slurry remains in the plurality of uneven portions.
- the polisher 16 With the polishing pad 16 a being kept rotating, the polisher 16 is moved in directions parallel to the front surface of the semiconductor wafer W, as indicated with the arrows in FIG. 1B . The polisher 16 is moved to polish the entire front surface of the semiconductor wafer W.
- the polishing device and the polishing method according to the first embodiment enable effective removal of convex defects on a front surface of a semiconductor wafer.
- FIGS. 3A to 3C are diagrams illustrating functions and effects of the polishing device and the polishing method according to the first embodiment.
- FIG. 3A is a schematic diagram illustrating a convex defect.
- FIG. 3B is a diagram illustrating a polishing method according to a comparative example.
- FIG. 3C is a diagram illustrating the polishing method according to the first embodiment.
- the convex defect 30 is formed by forming a film over foreign matter 29 in a lower layer.
- the convex defect 30 illustrated in FIG. 3A is not attached to the front surface of the semiconductor wafer W but is integral to the surface. Therefore, it is difficult to remove the convex defect 30 by cleaning of a small mechanical action such as wet etching cleaning and brush cleaning.
- FIG. 3B illustrates a polishing method in which a polishing pad 17 is moved parallel to the front surface of the semiconductor wafer W.
- the convex defect 30 is removed by shearing stress applied in a direction parallel to the front surface of the semiconductor wafer W.
- the polishing pad 17 continues to be moved laterally, and the shearing stress is continuously applied. Consequently, for example, the removed convex defect 30 is dragged on the front surface of the semiconductor wafer W by the polishing pad 17 and may unfortunately form a large scratch in the front surface of the semiconductor wafer W. Moreover, for example, the foreign matter 29 buried in the lower layer may be drawn out and dragged on the front surface of the semiconductor wafer W and may form an even larger scratch in the front surface of the semiconductor wafer W.
- polishing method according to the first embodiment in a similar manner to the comparative example, shearing stress is applied in a direction parallel to the front surface of the semiconductor wafer W in the contact portion of the polishing pad 16 a so as to remove the convex defect 30 .
- the polishing method according to the first embodiment differs from the comparative example in that the polishing pad 16 a is rotated. Consequently, after removing the convex defect 30 , the polishing pad 16 a is moved upward. Therefore, no scratch is formed by dragging the convex defect 30 and by drawing out the foreign matter 29 buried in the lower layer and dragging the foreign matter 29 .
- the polishing device and the polishing method according to the first embodiment enable effective removal of convex defects on a front surface of a semiconductor wafer without scratching the front surface of the semiconductor wafer.
- FIG. 4 is a diagram illustrating functions and effects of the polishing method according to the first embodiment.
- a circumferential width (Wx in FIG. 4 ) of the portion where the polishing pad 16 a is in contact with the semiconductor wafer W is equal to or less than a minimum size of a pattern formed on the semiconductor wafer W.
- the minimum size of the pattern formed on the semiconductor wafer W is a width (L 1 in FIG. 4 ) of wiring 40 or an interval (L 2 in FIG. 4 ) between pieces of the wiring 40 .
- a length of a scratch formed by the polishing pad 16 a dragging the convex defect 30 or such matter becomes equal to or less than the minimum size of the pattern formed on the semiconductor wafer W. This prevents, for example, disconnection of the wiring 40 and short-circuiting between pieces of the wiring 40 .
- FIG. 5 is a diagram illustrating functions and effects of the polishing method according to the first embodiment.
- FIG. 5 illustrates a case where the polisher 16 is moved horizontally relative to the semiconductor wafer W.
- a distance (d in FIG. 5 ) of movement of a point (A in FIG. 5 ) in the polishing pad 16 a on the front surface of the semiconductor wafer W while the point is in contact with the semiconductor wafer W is equal to or less than the minimum size of the pattern formed on the semiconductor wafer W.
- the minimum size of the pattern formed on the semiconductor wafer W is the width (L 1 in FIG. 5 ) of the wiring 40 or the interval (L 2 in FIG. 5 ) between pieces of the wiring 40 .
- a length of a scratch formed by the polishing pad 16 a dragging the convex defect 30 or such matter becomes equal to or less than the minimum size of the pattern formed on the semiconductor wafer W. This prevents, for example, disconnection of the wiring 40 and short-circuiting between pieces of the wiring 40 .
- the storage modulus of the polishing pad 16 a is preferably equal to or higher than 0.01 GPa and equal to or less than 10 GPa and more preferably equal to or higher than 0.1 GPa and equal to or less than 1 GPa.
- the storage modulus is higher than the lower limit value, removal efficiency of the convex defect, for example, is increased.
- the storage modulus is less than the upper limit value, abrasion of a region other than the convex defect is prevented.
- the polishing pad 16 a includes resin or non-woven fabric.
- the polishing device and the polishing method according to the first embodiment enable effective removal of convex defects.
- a polishing device differs from the first embodiment in that the polishing device according to the second embodiment further includes a second rotation mechanism to rotate the holder to revolve the substrate about the center of the substrate.
- a polishing method according to the second embodiment differs from the first embodiment in that the polishing method according to the second embodiment revolves the substrate about the center of the substrate. In the following description, some of the contents overlapping with the first embodiment will not be repeated.
- FIGS. 6A and 6B are schematic diagrams illustrating the polishing device according to the second embodiment.
- FIG. 6A illustrates a cross-sectional view of the polishing device
- FIG. 6B illustrates a top view of the polishing device.
- a polishing device 200 according to the second embodiment polishes a surface of a substrate such as a semiconductor wafer.
- the polishing device 200 includes the stage 10 , the support shaft 12 , the abrasive dispensing nozzle 14 , the polisher 16 , the first rotation mechanism 18 , the movement mechanism 20 , the housing 22 , the controller 24 , and a second rotation mechanism 26 .
- the polisher 16 includes the polishing pad 16 a and the rotation shaft 16 b.
- the second rotation mechanism 26 rotates the stage 10 to revolve the semiconductor wafer W about the center C of the semiconductor wafer W.
- the second rotation mechanism 26 rotates the support shaft 12 .
- the second rotation mechanism 26 includes components such as a motor and a bearing to rotatably hold the support shaft 12 .
- the second rotation mechanism 26 is controlled by the controller 24 .
- the semiconductor wafer W is revolved about the center C of the semiconductor wafer W. Revolving the semiconductor wafer W increases shearing stress at the contact portion of the polishing pad 16 a . This improves removal performance of convex defects.
- the polishing device and the polishing method according to the second embodiment enable more effective removal of convex defects than the first embodiment.
- a polishing device differs from the first embodiment in that the polishing device according to the third embodiment includes a plurality of polishers. In the following description, some of the contents overlapping with the first embodiment will not be repeated.
- FIGS. 7A and 7B are schematic diagrams illustrating the polishing device according to the third embodiment.
- FIG. 7A illustrates a cross-sectional view of the polishing device
- FIG. 7B illustrates a top view of the polishing device.
- a polishing device 300 according to the third embodiment polishes a surface of a substrate such as a semiconductor wafer.
- the polishing device 300 includes the stage 10 , the support shaft 12 , the abrasive dispensing nozzle 14 , the polishers 16 , the first rotation mechanism 18 , the movement mechanism 20 , the housing 22 , the controller 24 , and the second rotation mechanism 26 .
- the polishers 16 each include the polishing pad 16 a and the rotation shaft 16 b.
- the polishing device 300 includes the plurality of polishers 16 .
- FIGS. 7A and 7B illustrate an example of two polishers 16 .
- the polishing device 300 may include three polishers 16 or more.
- the polishing device 300 including the plurality of polishers 16 can shorten polishing time.
- the polishing device As described above, the polishing device according to the third embodiment enables effective removal of convex defects in a similar manner to the first embodiment. Furthermore, polishing time can be shortened.
- a polishing device differs from the first embodiment in that the elastic body has a length larger than a maximum length of the substrate. In the following description, some of the contents overlapping with the first embodiment will not be repeated.
- FIGS. 8A and 8B are schematic diagrams illustrating the polishing device according to the fourth embodiment.
- FIG. 8A illustrates a cross-sectional view of the polishing device
- FIG. 8B illustrates a top view of the polishing device.
- a polishing device 400 according to the fourth embodiment polishes a surface of a substrate such as a semiconductor wafer.
- the polishing device 400 includes the stage 10 , the support shaft 12 , the abrasive dispensing nozzle 14 ), the polisher 16 , the first rotation mechanism 18 , the movement mechanism 20 , the housing 22 , the controller 24 , and the second rotation mechanism 26 .
- the polisher 16 includes the polishing pad 16 a and the rotation shaft 16 b.
- the polishing pad 16 a of the polishing device 400 has a length (L 3 in FIG. 8B ) larger than a maximum length (diameter D in FIG. 8B ) of the semiconductor wafer W.
- the polishing device 400 can shorten polishing time.
- the polishing device As described above, the polishing device according to the fourth embodiment enables effective removal of convex defects in a similar manner to the first embodiment. Furthermore, polishing time can be shortened.
- the surface of the polishing pad 16 a is circular in cross-section perpendicular to the front surface of the semiconductor wafer W.
- the surface of the polishing pad 16 a may be elliptic in cross-section.
- the polishing pad 16 a makes rotary movement.
- the polishing pad 16 a may make reciprocating movement like a pendulum.
- a cross-sectional shape of the polishing pad 16 a may be part of a circle to reduce the polishing pad 16 a in size.
- the cross-sectional shape of the polishing pad 16 a may be a fan shape.
- the stage 10 is secured, and the polisher 16 is moved horizontally.
- the polisher 16 may be secured, and the stage 10 may be moved horizontally.
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Disintegrating Or Milling (AREA)
Abstract
Description
- This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2019-052002, filed Mar. 19, 2019, the entire contents of which are incorporated herein by reference.
- Embodiments described herein relate generally to a polishing device and a polishing method.
- Semiconductor devices, such as memory devices and logic devices, are manufactured by depositing films on a substrate and etching films repeatedly to form a desired circuit pattern on the substrate. During depositing of films and etching of films, for example, a convex defect, which protrudes from the surface of the substrate, may be occasionally formed on the substrate.
- When the surface of the substrate has such a convex defect, an unfavorable situation, known as defocusing, arises in a lithography step for forming a circuit pattern to hinder formation of the circuit pattern as desired. In particular, this situation becomes more serious as a minimum size of circuit patterns decreases in accordance with progress in microfabrication of semiconductor devices.
- When a film is further deposited over the convex defect, for example, an enlarged convex defect is formed on the buried convex defect. As the stacking number of films increases, the convex defect continues to be enlarged. This increases a region where defocusing hinders formation of the desired circuit pattern, and consequently, the above-described unfavorable situation becomes even more serious.
- When memory cells of a memory device have a three-dimensional configuration, for example, the stacking number of films formed on a substrate drastically increases. This increases an influence of the convex defect on formation of circuit patterns, thus decreasing the yield of semiconductor devices. Consequently, it is desirable to effectively remove the convex defect on the surface of the substrate.
-
FIGS. 1A and 1B are schematic diagrams illustrating a polishing device according to a first embodiment. -
FIG. 2 is a diagram illustrating a polisher of the polishing device according to the first embodiment. -
FIGS. 3A to 3C are diagrams illustrating functions and effects of the polishing device and a polishing method according to the first embodiment. -
FIGS. 4 and 5 are diagrams illustrating functions and effects of the polishing method according to the first embodiment. -
FIGS. 6A and 6B are schematic diagrams illustrating a polishing device according to a second embodiment. -
FIGS. 7A and 7B are schematic diagrams illustrating a polishing device according to a third embodiment. -
FIGS. 8A and 8B are schematic diagrams illustrating a polishing device according to a fourth embodiment. - Embodiments provide a polishing device and a polishing method that effectively remove convex defects on a surface of a substrate.
- In general, according to an embodiment, a polishing device includes a substrate holder, a dispenser configured to dispense an abrasive to a surface of a substrate held by the substrate holder, a polisher including an elastic body configured to polish the surface of the substrate as the elastic body is rotated with respect to the surface of the substrate. An area of contact between the elastic body and the surface of the substrate during polishing is smaller than a surface area of a region of the substrate that is to be polished by the elastic body. The elastic body is moved, while the elastic body is rotated, with a downward velocity component prior to contacting the surface of the substrate and with an upward velocity component after the elastic body comes into contact with the surface of the substrate.
- Description will now be made on embodiments of the present disclosure with reference to the drawings. In the following description, the same or similar components are denoted with identical reference numerals and signs, and components described once will not be elaborated repeatedly unless necessary.
- Hereinafter, a polishing device and a polishing method according to each of the embodiments will be described with reference to the drawings.
- A polishing device according to a first embodiment includes: a holder configured to hold a substrate; a dispenser configured to dispense abrasive to a surface of the substrate; and a polisher including an elastic body and configured to polish the surface of the substrate using the elastic body. An area of contact between the elastic body and the surface of the substrate is smaller than a surface area of the substrate. A direction of a component of a velocity vector of the elastic body in polishing in a normal direction of the surface of the substrate is reversed after the elastic body comes into contact with the surface of the substrate.
- A polishing method according to the first embodiment includes: dispensing abrasive to a surface of a substrate; bringing an elastic body into contact with the surface of the substrate in such a manner that an area of contact between the elastic body and the surface of the substrate is smaller than a surface area of the substrate; and moving the elastic body in such a manner that a direction of a component of a velocity vector of the elastic body in a normal direction of the surface of the substrate is reversed after the elastic body comes into contact with the surface of the substrate so as to polish the surface of the substrate.
-
FIGS. 1A and 1B are schematic diagrams illustrating the polishing device according to the first embodiment.FIG. 1A illustrates a cross-sectional view of the polishing device, andFIG. 1B illustrates a top view of the polishing device. Apolishing device 100 according to the first embodiment polishes a surface of a substrate such as a semiconductor wafer. - The
polishing device 100 according to the first embodiment includes a stage 10 (also referred to as the holder), asupport shaft 12, an abrasive dispensing nozzle 14 (also referred to as the dispenser), apolisher 16, afirst rotation mechanism 18, amovement mechanism 20, ahousing 22, and acontroller 24. Thepolisher 16 includes apolishing pad 16 a (also referred to as the elastic body) and arotation shaft 16 b. - A semiconductor wafer W (also referred to as the substrate) to be polished is placed on the
stage 10. The semiconductor wafer W is secured on thestage 10 by, for example, vacuum suction from a rear surface side. A front surface of the semiconductor wafer W faces upward. That is, the front surface of the semiconductor wafer W is on an opposite side to thestage 10 side. - The
support shaft 12 supports thestage 10. Thesupport shaft 12 secures thestage 10. - The abrasive dispensing
nozzle 14 dispenses slurry to the front surface of the semiconductor wafer W. The slurry is an example of the abrasive. - The slurry includes abrasive grains. The abrasive grains are particles including silicon oxide, aluminum oxide, or cerium oxide, for example.
- The
polisher 16 is disposed on the semiconductor wafer W side of thestage 10. Thepolisher 16 polishes the front surface of the semiconductor wafer W. - The
polisher 16 includes thepolishing pad 16 a and therotation shaft 16 b. Thepolishing pad 16 a is disposed around therotation shaft 16 b. - The
polishing pad 16 a is an example of the elastic body. An storage modulus of thepolishing pad 16 a is, for example, equal to or higher than 0.01 GPa and equal to or less than 10 GPa. The storage modulus of thepolishing pad 16 a is measured by a method provided in JIS K7244-4 “Plastics—Determination of dynamic mechanical properties—Part 4: Tensile vibration —Non-resonance method”. - The
polishing pad 16 a includes resin or non-woven fabric, for example. Thepolishing pad 16 a is made of a material such as polyurethane resin. - The
polishing pad 16 a is circular or elliptic in cross-section perpendicular to the front surface of the semiconductor wafer W.FIG. 1A illustrates a case where a surface of thepolishing pad 16 a is circular in cross-section perpendicular to the front surface of the semiconductor wafer W. - The
rotation shaft 16 b extends in a direction parallel to a surface of thestage 10. Therotation shaft 16 b is parallel to the front surface of the semiconductor wafer W. Rotation of therotation shaft 16 b causes thepolishing pad 16 a to rotate about therotation shaft 16 b in a circumferential direction of thepolishing pad 16 a. Thepolishing pad 16 a makes rotary movement. -
FIG. 2 is a diagram illustrating thepolisher 16 of thepolishing device 100 according to the first embodiment.FIG. 2 is an enlarged view of thepolisher 16 and the front surface of the semiconductor wafer W.FIG. 2 illustrates a state where the front surface of the semiconductor wafer W is being polished. -
FIG. 2 illustrates a state of thepolishing pad 16 a in contact with the front surface of the semiconductor wafer W. When thepolishing pad 16 a comes into contact with the front surface of the semiconductor wafer W, thepolishing pad 16 a is elastically deformed. - A contact portion (S in
FIG. 2 ) where thepolishing pad 16 a polishing the front surface of the semiconductor wafer W is in contact with the front surface of the semiconductor wafer W has a contact area smaller than a surface area of the semiconductor wafer W. In other words, thepolishing pad 16 a is only in contact with part of the front surface of the semiconductor wafer W. A minimum width (Wmin) of the contact portion S is, for example, equal to or less than 1/100 of a diameter of the semiconductor wafer W. - A direction of a component of a velocity vector of the
polishing pad 16 a in polishing in a normal direction of the front surface of the semiconductor wafer W is reversed after thepolishing pad 16 a comes into contact with the front surface of the semiconductor wafer W. For example, a velocity vector before thepolishing pad 16 a in rotation comes into contact with the front surface of the semiconductor wafer W is a vector Va inFIG. 2 . For example, a velocity vector after thepolishing pad 16 a in rotation comes into contact with the front surface of the semiconductor wafer W is a vector Vb inFIG. 2 . - A component of the vector Va in the normal direction of the front surface of the semiconductor wafer W is a vector Vax in
FIG. 2 . A component of the vector Vb in the normal direction of the front surface of the semiconductor wafer W is a vector Vbx inFIG. 2 . The vector Vax and the vector Vbx have reversed directions. - The first rotation mechanism. 18 causes the
polishing pad 16 a to rotate about therotation shaft 16 b in the circumferential direction of thepolishing pad 16 a. Thefirst rotation mechanism 18 includes components such as a motor and a bearing to rotatably hold therotation shaft 16 b. - The
movement mechanism 20 causes thepolisher 16 to move relative to the semiconductor wafer W in directions parallel to the front surface of the semiconductor wafer W. Themovement mechanism 20 moves thepolisher 16 in the directions parallel to the front surface of the semiconductor wafer W. When thepolisher 16 is moved using themovement mechanism 20, the front surface of the semiconductor wafer W can be wholly polished. Themovement mechanism 20 includes components such as a motor and a conversion mechanism to convert rotary motion of the motor into linear motion. - The
housing 22 contains components such as thestage 10, thesupport shaft 12, the abrasive dispensing nozzle 14 (the dispenser), thepolisher 16, thefirst rotation mechanism 18, and themovement mechanism 20. Thehousing 22 protects components such as thestage 10, thesupport shaft 12, the abrasive dispensing nozzle 14 (the dispenser), thepolisher 16, thefirst rotation mechanism 18, and themovement mechanism 20. - The
controller 24 controls theabrasive dispensing nozzle 14, thepolisher 16, thefirst rotation mechanism 18, and themovement mechanism 20. For example, thecontroller 24 controls a dispensing start and end of the slurry from theabrasive dispensing nozzle 14 and a dispensing amount of the slurry. Thecontroller 24 respectively controls thefirst rotation mechanism 18 and the movement mechanism. 20 to control a rotation speed and a movement speed of thepolishing pad 16 a. Thecontroller 24 may be hardware such as a circuit board or a combination of hardware and software such as a control program stored in a memory. - Next, the polishing method according to the first embodiment will be described. A case of using the
polishing device 100 according to the first embodiment will be described as an example. - In the polishing method according to the first embodiment, the front surface of the semiconductor wafer W is polished. A circuit pattern is formed on the semiconductor wafer W to be polished, for example, by depositing films and etching films repeatedly. At least one of an insulating film and a conductive film, for example, is exposed on the front surface of the semiconductor wafer W to be polished.
- First, the semiconductor wafer W is conveyed into the
housing 22 and placed on thestage 10. The semiconductor wafer W is secured on thestage 10 by, for example, vacuum suction from the rear surface side. - Next, the slurry is dispensed to the front surface of the semiconductor wafer W. The slurry is dispensed from the
abrasive dispensing nozzle 14. - Next, the
polishing pad 16 a of thepolisher 16 is brought into contact with the front surface of the semiconductor wafer W. The contact portion (S inFIG. 2 ) where thepolishing pad 16 a is in contact with the front surface of the semiconductor wafer W has a contact area smaller than the surface area of the semiconductor wafer W. - The
polishing pad 16 a is rotated about therotation shaft 16 b in the circumferential direction of thepolishing pad 16 a. The direction of the component of the velocity vector of thepolishing pad 16 a in polishing in the normal direction of the front surface of the semiconductor wafer W is reversed after thepolishing pad 16 a comes into contact with the front surface of the semiconductor wafer W. The front surface of the semiconductor wafer W is polished by thepolishing pad 16 a. A surface of thepolishing pad 16 a has a plurality of uneven portions. While the front surface of the semiconductor wafer W is being polished, the slurry remains in the plurality of uneven portions. - With the
polishing pad 16 a being kept rotating, thepolisher 16 is moved in directions parallel to the front surface of the semiconductor wafer W, as indicated with the arrows inFIG. 1B . Thepolisher 16 is moved to polish the entire front surface of the semiconductor wafer W. - After polishing the entire front surface of the semiconductor wafer W is ended, dispensing the slurry to the front surface of the semiconductor wafer W is ended. Then, the semiconductor wafer W is conveyed out of the
housing 22. - Next, functions and effects of the
polishing device 100 and the polishing method according to the first embodiment will be described. - When a front surface of a semiconductor wafer has a convex defect in manufacturing a semiconductor device, an unfavorable situation, known as defocusing, arises in a lithography step to hinder formation of a desired circuit pattern. In particular, this situation becomes more serious as a minimum size of circuit patterns decreases in accordance with progress in microfabrication of semiconductor devices.
- When a film is further deposited over the convex defect, for example, an enlarged convex defect is formed on the buried convex defect. As the stacking number of films increases, the convex defect continues to be enlarged. This increases a region where defocusing hinders formation of the desired circuit pattern, and consequently, the above-described unfavorable situation becomes even more serious.
- The polishing device and the polishing method according to the first embodiment enable effective removal of convex defects on a front surface of a semiconductor wafer.
-
FIGS. 3A to 3C are diagrams illustrating functions and effects of the polishing device and the polishing method according to the first embodiment.FIG. 3A is a schematic diagram illustrating a convex defect.FIG. 3B is a diagram illustrating a polishing method according to a comparative example.FIG. 3C is a diagram illustrating the polishing method according to the first embodiment. - Suppose, for example, that such a
convex defect 30 as illustrated inFIG. 3A exists on the semiconductor wafer W. Theconvex defect 30 is formed by forming a film overforeign matter 29 in a lower layer. - The
convex defect 30 illustrated inFIG. 3A is not attached to the front surface of the semiconductor wafer W but is integral to the surface. Therefore, it is difficult to remove theconvex defect 30 by cleaning of a small mechanical action such as wet etching cleaning and brush cleaning. -
FIG. 3B illustrates a polishing method in which apolishing pad 17 is moved parallel to the front surface of the semiconductor wafer W. In this case, theconvex defect 30 is removed by shearing stress applied in a direction parallel to the front surface of the semiconductor wafer W. - The
polishing pad 17 continues to be moved laterally, and the shearing stress is continuously applied. Consequently, for example, the removedconvex defect 30 is dragged on the front surface of the semiconductor wafer W by thepolishing pad 17 and may unfortunately form a large scratch in the front surface of the semiconductor wafer W. Moreover, for example, theforeign matter 29 buried in the lower layer may be drawn out and dragged on the front surface of the semiconductor wafer W and may form an even larger scratch in the front surface of the semiconductor wafer W. - In the polishing method according to the first embodiment, in a similar manner to the comparative example, shearing stress is applied in a direction parallel to the front surface of the semiconductor wafer W in the contact portion of the
polishing pad 16 a so as to remove theconvex defect 30. The polishing method according to the first embodiment differs from the comparative example in that thepolishing pad 16 a is rotated. Consequently, after removing theconvex defect 30, thepolishing pad 16 a is moved upward. Therefore, no scratch is formed by dragging theconvex defect 30 and by drawing out theforeign matter 29 buried in the lower layer and dragging theforeign matter 29. - The polishing device and the polishing method according to the first embodiment enable effective removal of convex defects on a front surface of a semiconductor wafer without scratching the front surface of the semiconductor wafer.
-
FIG. 4 is a diagram illustrating functions and effects of the polishing method according to the first embodiment. As illustrated inFIG. 4 , preferably, a circumferential width (Wx inFIG. 4 ) of the portion where thepolishing pad 16 a is in contact with the semiconductor wafer W is equal to or less than a minimum size of a pattern formed on the semiconductor wafer W. In the case illustrated inFIG. 4 , the minimum size of the pattern formed on the semiconductor wafer W is a width (L1 inFIG. 4 ) ofwiring 40 or an interval (L2 inFIG. 4 ) between pieces of thewiring 40. - When the above-described condition is satisfied, a length of a scratch formed by the
polishing pad 16 a dragging theconvex defect 30 or such matter becomes equal to or less than the minimum size of the pattern formed on the semiconductor wafer W. This prevents, for example, disconnection of thewiring 40 and short-circuiting between pieces of thewiring 40. -
FIG. 5 is a diagram illustrating functions and effects of the polishing method according to the first embodiment.FIG. 5 illustrates a case where thepolisher 16 is moved horizontally relative to the semiconductor wafer W. - As illustrated in
FIG. 5 , preferably, a distance (d inFIG. 5 ) of movement of a point (A inFIG. 5 ) in thepolishing pad 16 a on the front surface of the semiconductor wafer W while the point is in contact with the semiconductor wafer W is equal to or less than the minimum size of the pattern formed on the semiconductor wafer W. In the case illustrated inFIG. 5 , the minimum size of the pattern formed on the semiconductor wafer W is the width (L1 inFIG. 5 ) of thewiring 40 or the interval (L2 inFIG. 5 ) between pieces of thewiring 40. - When the above-described condition is satisfied, a length of a scratch formed by the
polishing pad 16 a dragging theconvex defect 30 or such matter becomes equal to or less than the minimum size of the pattern formed on the semiconductor wafer W. This prevents, for example, disconnection of thewiring 40 and short-circuiting between pieces of thewiring 40. - The storage modulus of the
polishing pad 16 a is preferably equal to or higher than 0.01 GPa and equal to or less than 10 GPa and more preferably equal to or higher than 0.1 GPa and equal to or less than 1 GPa. When the storage modulus is higher than the lower limit value, removal efficiency of the convex defect, for example, is increased. When the storage modulus is less than the upper limit value, abrasion of a region other than the convex defect is prevented. - In view of removing the convex defect effectively, preferably, the
polishing pad 16 a includes resin or non-woven fabric. - As described above, the polishing device and the polishing method according to the first embodiment enable effective removal of convex defects.
- A polishing device according to a second embodiment differs from the first embodiment in that the polishing device according to the second embodiment further includes a second rotation mechanism to rotate the holder to revolve the substrate about the center of the substrate. A polishing method according to the second embodiment differs from the first embodiment in that the polishing method according to the second embodiment revolves the substrate about the center of the substrate. In the following description, some of the contents overlapping with the first embodiment will not be repeated.
-
FIGS. 6A and 6B are schematic diagrams illustrating the polishing device according to the second embodiment.FIG. 6A illustrates a cross-sectional view of the polishing device, andFIG. 6B illustrates a top view of the polishing device. Apolishing device 200 according to the second embodiment polishes a surface of a substrate such as a semiconductor wafer. - The
polishing device 200 according to the second embodiment includes thestage 10, thesupport shaft 12, theabrasive dispensing nozzle 14, thepolisher 16, thefirst rotation mechanism 18, themovement mechanism 20, thehousing 22, thecontroller 24, and asecond rotation mechanism 26. Thepolisher 16 includes thepolishing pad 16 a and therotation shaft 16 b. - The
second rotation mechanism 26 rotates thestage 10 to revolve the semiconductor wafer W about the center C of the semiconductor wafer W. Thesecond rotation mechanism 26 rotates thesupport shaft 12. - The
second rotation mechanism 26 includes components such as a motor and a bearing to rotatably hold thesupport shaft 12. Thesecond rotation mechanism 26 is controlled by thecontroller 24. - In the polishing method according to the second embodiment, the semiconductor wafer W is revolved about the center C of the semiconductor wafer W. Revolving the semiconductor wafer W increases shearing stress at the contact portion of the
polishing pad 16 a. This improves removal performance of convex defects. - As described above, the polishing device and the polishing method according to the second embodiment enable more effective removal of convex defects than the first embodiment.
- A polishing device according to a third embodiment differs from the first embodiment in that the polishing device according to the third embodiment includes a plurality of polishers. In the following description, some of the contents overlapping with the first embodiment will not be repeated.
-
FIGS. 7A and 7B are schematic diagrams illustrating the polishing device according to the third embodiment.FIG. 7A illustrates a cross-sectional view of the polishing device, andFIG. 7B illustrates a top view of the polishing device. Apolishing device 300 according to the third embodiment polishes a surface of a substrate such as a semiconductor wafer. - The
polishing device 300 according to the third embodiment includes thestage 10, thesupport shaft 12, theabrasive dispensing nozzle 14, thepolishers 16, thefirst rotation mechanism 18, themovement mechanism 20, thehousing 22, thecontroller 24, and thesecond rotation mechanism 26. Thepolishers 16 each include thepolishing pad 16 a and therotation shaft 16 b. - The
polishing device 300 includes the plurality ofpolishers 16.FIGS. 7A and 7B illustrate an example of twopolishers 16. Thepolishing device 300 may include threepolishers 16 or more. - The
polishing device 300 including the plurality ofpolishers 16 can shorten polishing time. - As described above, the polishing device according to the third embodiment enables effective removal of convex defects in a similar manner to the first embodiment. Furthermore, polishing time can be shortened.
- A polishing device according to a fourth embodiment differs from the first embodiment in that the elastic body has a length larger than a maximum length of the substrate. In the following description, some of the contents overlapping with the first embodiment will not be repeated.
-
FIGS. 8A and 8B are schematic diagrams illustrating the polishing device according to the fourth embodiment.FIG. 8A illustrates a cross-sectional view of the polishing device, andFIG. 8B illustrates a top view of the polishing device. Apolishing device 400 according to the fourth embodiment polishes a surface of a substrate such as a semiconductor wafer. - The
polishing device 400 according to the fourth embodiment includes thestage 10, thesupport shaft 12, the abrasive dispensing nozzle 14), thepolisher 16, thefirst rotation mechanism 18, themovement mechanism 20, thehousing 22, thecontroller 24, and thesecond rotation mechanism 26. Thepolisher 16 includes thepolishing pad 16 a and therotation shaft 16 b. - The
polishing pad 16 a of thepolishing device 400 has a length (L3 inFIG. 8B ) larger than a maximum length (diameter D inFIG. 8B ) of the semiconductor wafer W. - Since the length L3 of the
polishing pad 16 a is larger than the diameter D of the semiconductor wafer W, thepolishing device 400 can shorten polishing time. - As described above, the polishing device according to the fourth embodiment enables effective removal of convex defects in a similar manner to the first embodiment. Furthermore, polishing time can be shortened.
- In describing the first to fourth embodiments as examples, the surface of the
polishing pad 16 a is circular in cross-section perpendicular to the front surface of the semiconductor wafer W. However, the surface of thepolishing pad 16 a may be elliptic in cross-section. - In describing the first to fourth embodiments as examples, the
polishing pad 16 a makes rotary movement. However, thepolishing pad 16 a may make reciprocating movement like a pendulum. In this case, for example, a cross-sectional shape of thepolishing pad 16 a may be part of a circle to reduce thepolishing pad 16 a in size. For example, the cross-sectional shape of thepolishing pad 16 a may be a fan shape. - In describing the first, third, and fourth embodiments as examples, the
stage 10 is secured, and thepolisher 16 is moved horizontally. However, thepolisher 16 may be secured, and thestage 10 may be moved horizontally. - While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2019052002A JP7317532B2 (en) | 2019-03-19 | 2019-03-19 | Polishing device and polishing method |
JP2019-052002 | 2019-03-19 |
Publications (1)
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US20200298363A1 true US20200298363A1 (en) | 2020-09-24 |
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US16/557,070 Abandoned US20200298363A1 (en) | 2019-03-19 | 2019-08-30 | Polishing device and polishing method |
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US (1) | US20200298363A1 (en) |
JP (1) | JP7317532B2 (en) |
CN (1) | CN111716253A (en) |
TW (1) | TWI785259B (en) |
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Also Published As
Publication number | Publication date |
---|---|
JP7317532B2 (en) | 2023-07-31 |
CN111716253A (en) | 2020-09-29 |
TW202036696A (en) | 2020-10-01 |
JP2020151801A (en) | 2020-09-24 |
TWI785259B (en) | 2022-12-01 |
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