JP4916657B2 - プロセスに依存した溝構造を有するケミカルメカニカル研磨パッド - Google Patents
プロセスに依存した溝構造を有するケミカルメカニカル研磨パッド Download PDFInfo
- Publication number
- JP4916657B2 JP4916657B2 JP2004359381A JP2004359381A JP4916657B2 JP 4916657 B2 JP4916657 B2 JP 4916657B2 JP 2004359381 A JP2004359381 A JP 2004359381A JP 2004359381 A JP2004359381 A JP 2004359381A JP 4916657 B2 JP4916657 B2 JP 4916657B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- wafer
- pad
- slurry
- polishing pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S451/00—Abrading
- Y10S451/921—Pad for lens shaping tool
Description
除去速度=Kchem(Kmech)P[Vpad-wafer] {1}
によって表される。この式は、ウェーハ112の研磨面からの材料の除去速度を、ウェーハとパッドとの間の相対速度(Vpad-wafer)、ウェーハとパッドとの間の圧力P、化学的作用によるウェーハからの材料の除去に関するパラメータKchem及び機械的作用によるウェーハ材料の除去に関するパラメータKmechの関数として表している。逆混合が存在する場合、化学種の濃度がウェーハ112の下の異なる場所でそれぞれ異なり、それがウェーハ112全体での不均一な研磨速度をもたらす。
Claims (2)
- 第一の回転軸を中心に所定の第一の回転速度で回転するウェーハを、研磨するための円形の研磨パッドであって、
(a)第一の回転軸に対して、所定の速度で動くように動作上、構成されているパッド研磨層を含み、前記パッド研磨層が、
(i)研磨パッドの回転軸と第一の回転軸との間の分離距離S、ウェーハの所定の第一の回転速度Ωwafer及びパッド研磨層の所定の回転速度Ωpadの関数として計算される下記式の臨界半径Rcritical
の0.5〜2倍のところに位置する境界であって、境界が、境界の内側の第一の側と、境界の外側の第二の側とを分ける、境界、
(ii)境界の第一の側に位置し、研磨パッドとウェーハとの間のスラリーの中で、研磨パッドの接線速度に対して反対方向のスラリーの速度により発生する逆混合を作る第一の構造を有する第一の溝群、並びに
(iii)境界の第二の側に位置し、第一の構造とは異なる第二の構造であって、研磨パッドとウェーハとの間のスラリーの中で、研磨パッドの接線速度に対して反対方向のスラリーの速度により発生する逆混合を作らない第二の構造を有する第二の溝群
を含むものである、研磨パッド。 - 境界が、臨界半径Rcriticalの0.9〜1.1倍に位置する、請求項1記載の研磨パッド。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/734,795 US6843711B1 (en) | 2003-12-11 | 2003-12-11 | Chemical mechanical polishing pad having a process-dependent groove configuration |
US10/734,795 | 2003-12-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005191565A JP2005191565A (ja) | 2005-07-14 |
JP4916657B2 true JP4916657B2 (ja) | 2012-04-18 |
Family
ID=33565391
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004359381A Active JP4916657B2 (ja) | 2003-12-11 | 2004-12-13 | プロセスに依存した溝構造を有するケミカルメカニカル研磨パッド |
Country Status (5)
Country | Link |
---|---|
US (1) | US6843711B1 (ja) |
JP (1) | JP4916657B2 (ja) |
KR (1) | KR101107636B1 (ja) |
CN (1) | CN100366391C (ja) |
TW (1) | TWI338604B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10052741B2 (en) | 2016-03-08 | 2018-08-21 | Toshiba Memory Corporation | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7040952B1 (en) * | 2002-06-28 | 2006-05-09 | Lam Research Corporation | Method for reducing or eliminating de-lamination of semiconductor wafer film layers during a chemical mechanical planarization process |
US7377840B2 (en) * | 2004-07-21 | 2008-05-27 | Neopad Technologies Corporation | Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs |
US7704125B2 (en) | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US9278424B2 (en) | 2003-03-25 | 2016-03-08 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US8864859B2 (en) | 2003-03-25 | 2014-10-21 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US7591713B2 (en) * | 2003-09-26 | 2009-09-22 | Shin-Etsu Handotai Co., Ltd. | Polishing pad, method for processing polishing pad, and method for producing substrate using it |
US7125318B2 (en) * | 2003-11-13 | 2006-10-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad having a groove arrangement for reducing slurry consumption |
US7329174B2 (en) * | 2004-05-20 | 2008-02-12 | Jsr Corporation | Method of manufacturing chemical mechanical polishing pad |
US6974372B1 (en) * | 2004-06-16 | 2005-12-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad having grooves configured to promote mixing wakes during polishing |
US6958002B1 (en) * | 2004-07-19 | 2005-10-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with flow modifying groove network |
US7059949B1 (en) | 2004-12-14 | 2006-06-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP pad having an overlapping stepped groove arrangement |
US7059950B1 (en) | 2004-12-14 | 2006-06-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP polishing pad having grooves arranged to improve polishing medium utilization |
US7131895B2 (en) * | 2005-01-13 | 2006-11-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP pad having a radially alternating groove segment configuration |
US7182677B2 (en) * | 2005-01-14 | 2007-02-27 | Applied Materials, Inc. | Chemical mechanical polishing pad for controlling polishing slurry distribution |
TWI385050B (zh) * | 2005-02-18 | 2013-02-11 | Nexplanar Corp | 用於cmp之特製拋光墊及其製造方法及其用途 |
US20060194530A1 (en) * | 2005-02-25 | 2006-08-31 | Thomson Clifford O | Polishing pad for use in polishing work pieces |
KR101279819B1 (ko) * | 2005-04-12 | 2013-06-28 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | 방사-편향 연마 패드 |
US7179159B2 (en) | 2005-05-02 | 2007-02-20 | Applied Materials, Inc. | Materials for chemical mechanical polishing |
US8057633B2 (en) * | 2006-03-28 | 2011-11-15 | Tokyo Electron Limited | Post-etch treatment system for removing residue on a substrate |
US7267610B1 (en) * | 2006-08-30 | 2007-09-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP pad having unevenly spaced grooves |
US7234224B1 (en) * | 2006-11-03 | 2007-06-26 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Curved grooving of polishing pads |
US7311590B1 (en) | 2007-01-31 | 2007-12-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with grooves to retain slurry on the pad texture |
US7520798B2 (en) * | 2007-01-31 | 2009-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with grooves to reduce slurry consumption |
US9180570B2 (en) | 2008-03-14 | 2015-11-10 | Nexplanar Corporation | Grooved CMP pad |
US8057282B2 (en) * | 2008-12-23 | 2011-11-15 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate polishing method |
US8062103B2 (en) * | 2008-12-23 | 2011-11-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate groove pattern |
DE102009046750B4 (de) | 2008-12-31 | 2019-02-14 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Elektrochemisches Einebnungssystem mit verbesserter Elektrolytströmung |
KR20110100080A (ko) * | 2010-03-03 | 2011-09-09 | 삼성전자주식회사 | 화학적 기계적 연마 공정용 연마 패드 및 이를 포함하는 화학적 기계적 연마 설비 |
JP6193652B2 (ja) * | 2013-07-08 | 2017-09-06 | エスアイアイ・セミコンダクタ株式会社 | 研磨パッドおよび化学的機械的研磨装置 |
TWI599447B (zh) | 2013-10-18 | 2017-09-21 | 卡博特微電子公司 | 具有偏移同心溝槽圖樣之邊緣排除區的cmp拋光墊 |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
KR102630261B1 (ko) | 2014-10-17 | 2024-01-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성 |
JP6940495B2 (ja) | 2015-10-30 | 2021-09-29 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法 |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US10875146B2 (en) * | 2016-03-24 | 2020-12-29 | Rohm And Haas Electronic Materials Cmp Holdings | Debris-removal groove for CMP polishing pad |
US10857648B2 (en) | 2017-06-14 | 2020-12-08 | Rohm And Haas Electronic Materials Cmp Holdings | Trapezoidal CMP groove pattern |
US10586708B2 (en) | 2017-06-14 | 2020-03-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Uniform CMP polishing method |
US10777418B2 (en) * | 2017-06-14 | 2020-09-15 | Rohm And Haas Electronic Materials Cmp Holdings, I | Biased pulse CMP groove pattern |
US10861702B2 (en) | 2017-06-14 | 2020-12-08 | Rohm And Haas Electronic Materials Cmp Holdings | Controlled residence CMP polishing method |
US10857647B2 (en) | 2017-06-14 | 2020-12-08 | Rohm And Haas Electronic Materials Cmp Holdings | High-rate CMP polishing method |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
CN112654655A (zh) | 2018-09-04 | 2021-04-13 | 应用材料公司 | 先进抛光垫配方 |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
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JP2647046B2 (ja) * | 1995-02-28 | 1997-08-27 | 日本電気株式会社 | 研磨布および研磨方法 |
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US5645469A (en) | 1996-09-06 | 1997-07-08 | Advanced Micro Devices, Inc. | Polishing pad with radially extending tapered channels |
US5921855A (en) | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
US6273806B1 (en) | 1997-05-15 | 2001-08-14 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
US5990012A (en) | 1998-01-27 | 1999-11-23 | Micron Technology, Inc. | Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads |
JPH11216663A (ja) | 1998-02-03 | 1999-08-10 | Sony Corp | 研磨パッド、研磨装置および研磨方法 |
JPH11267961A (ja) * | 1998-03-23 | 1999-10-05 | Sony Corp | 研磨パッド、研磨装置および研磨方法 |
GB2345255B (en) * | 1998-12-29 | 2000-12-27 | United Microelectronics Corp | Chemical-Mechanical Polishing Pad |
US6328632B1 (en) | 1999-08-31 | 2001-12-11 | Micron Technology, Inc. | Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies |
US20020068516A1 (en) * | 1999-12-13 | 2002-06-06 | Applied Materials, Inc | Apparatus and method for controlled delivery of slurry to a region of a polishing device |
US6656019B1 (en) * | 2000-06-29 | 2003-12-02 | International Business Machines Corporation | Grooved polishing pads and methods of use |
US6783436B1 (en) * | 2003-04-29 | 2004-08-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with optimized grooves and method of forming same |
-
2003
- 2003-12-11 US US10/734,795 patent/US6843711B1/en not_active Expired - Lifetime
-
2004
- 2004-11-25 TW TW093136355A patent/TWI338604B/zh active
- 2004-12-10 KR KR1020040103999A patent/KR101107636B1/ko active IP Right Grant
- 2004-12-10 CN CNB2004101007428A patent/CN100366391C/zh not_active Expired - Fee Related
- 2004-12-13 JP JP2004359381A patent/JP4916657B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10052741B2 (en) | 2016-03-08 | 2018-08-21 | Toshiba Memory Corporation | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US6843711B1 (en) | 2005-01-18 |
TW200529972A (en) | 2005-09-16 |
CN1626316A (zh) | 2005-06-15 |
KR101107636B1 (ko) | 2012-01-25 |
CN100366391C (zh) | 2008-02-06 |
TWI338604B (en) | 2011-03-11 |
JP2005191565A (ja) | 2005-07-14 |
KR20050058213A (ko) | 2005-06-16 |
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