JP2018107725A - 光電変換装置、撮像システム - Google Patents

光電変換装置、撮像システム Download PDF

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Publication number
JP2018107725A
JP2018107725A JP2016254364A JP2016254364A JP2018107725A JP 2018107725 A JP2018107725 A JP 2018107725A JP 2016254364 A JP2016254364 A JP 2016254364A JP 2016254364 A JP2016254364 A JP 2016254364A JP 2018107725 A JP2018107725 A JP 2018107725A
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Japan
Prior art keywords
photoelectric conversion
voltage
electrode
signal
node
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Pending
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JP2016254364A
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English (en)
Japanese (ja)
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JP2018107725A5 (enExample
Inventor
和昭 田代
Kazuaki Tashiro
和昭 田代
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2016254364A priority Critical patent/JP2018107725A/ja
Priority to US15/845,995 priority patent/US10728471B2/en
Publication of JP2018107725A publication Critical patent/JP2018107725A/ja
Publication of JP2018107725A5 publication Critical patent/JP2018107725A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C3/00—Measuring distances in line of sight; Optical rangefinders
    • G01C3/02—Details
    • G01C3/06—Use of electric means to obtain final indication
    • G01C3/08—Use of electric radiation detectors
    • G01C3/085—Use of electric radiation detectors with electronic parallax measurement
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60W—CONJOINT CONTROL OF VEHICLE SUB-UNITS OF DIFFERENT TYPE OR DIFFERENT FUNCTION; CONTROL SYSTEMS SPECIALLY ADAPTED FOR HYBRID VEHICLES; ROAD VEHICLE DRIVE CONTROL SYSTEMS FOR PURPOSES NOT RELATED TO THE CONTROL OF A PARTICULAR SUB-UNIT
    • B60W2420/00—Indexing codes relating to the type of sensors based on the principle of their operation
    • B60W2420/40—Photo, light or radio wave sensitive means, e.g. infrared sensors
    • B60W2420/403—Image sensing, e.g. optical camera
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60W—CONJOINT CONTROL OF VEHICLE SUB-UNITS OF DIFFERENT TYPE OR DIFFERENT FUNCTION; CONTROL SYSTEMS SPECIALLY ADAPTED FOR HYBRID VEHICLES; ROAD VEHICLE DRIVE CONTROL SYSTEMS FOR PURPOSES NOT RELATED TO THE CONTROL OF A PARTICULAR SUB-UNIT
    • B60W2554/00—Input parameters relating to objects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60W—CONJOINT CONTROL OF VEHICLE SUB-UNITS OF DIFFERENT TYPE OR DIFFERENT FUNCTION; CONTROL SYSTEMS SPECIALLY ADAPTED FOR HYBRID VEHICLES; ROAD VEHICLE DRIVE CONTROL SYSTEMS FOR PURPOSES NOT RELATED TO THE CONTROL OF A PARTICULAR SUB-UNIT
    • B60W30/00—Purposes of road vehicle drive control systems not related to the control of a particular sub-unit, e.g. of systems using conjoint control of vehicle sub-units
    • B60W30/08—Active safety systems predicting or avoiding probable or impending collision or attempting to minimise its consequences
    • B60W30/09—Taking automatic action to avoid collision, e.g. braking and steering

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
JP2016254364A 2016-12-27 2016-12-27 光電変換装置、撮像システム Pending JP2018107725A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016254364A JP2018107725A (ja) 2016-12-27 2016-12-27 光電変換装置、撮像システム
US15/845,995 US10728471B2 (en) 2016-12-27 2017-12-18 Photoelectric conversion device with a voltage control unit connected to a reset transistor and a capacitive element, and associated imaging system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016254364A JP2018107725A (ja) 2016-12-27 2016-12-27 光電変換装置、撮像システム

Publications (2)

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JP2018107725A true JP2018107725A (ja) 2018-07-05
JP2018107725A5 JP2018107725A5 (enExample) 2020-02-06

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US (1) US10728471B2 (enExample)
JP (1) JP2018107725A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021057885A (ja) * 2019-09-26 2021-04-08 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
JP2021082785A (ja) * 2019-11-22 2021-05-27 日本放送協会 固体撮像素子および撮像装置
JP2021125492A (ja) * 2020-01-31 2021-08-30 キヤノン株式会社 半導体装置、表示装置、撮像システム及び移動体

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* Cited by examiner, † Cited by third party
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JP2018093297A (ja) * 2016-11-30 2018-06-14 キヤノン株式会社 光電変換装置、撮像システム
JP2018182021A (ja) 2017-04-11 2018-11-15 ソニーセミコンダクタソリューションズ株式会社 撮像素子、積層型撮像素子及び固体撮像装置

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* Cited by examiner, † Cited by third party
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JPH11112018A (ja) * 1997-10-06 1999-04-23 Canon Inc 固体撮像装置と信号検出装置と信号蓄積装置
JP2012119652A (ja) * 2010-03-17 2012-06-21 Fujifilm Corp 有機光電変換素子の製造方法、有機光電変換素子、撮像素子、撮像装置
JP2016033981A (ja) * 2014-07-31 2016-03-10 キヤノン株式会社 固体撮像素子および撮像システム
JP2016052132A (ja) * 2015-09-18 2016-04-11 株式会社ニコン 撮像装置
US20160190188A1 (en) * 2014-12-26 2016-06-30 Panasonic Intellectual Property Management Co., Ltd. Imaging device including unit pixel cell

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JPH11112018A (ja) * 1997-10-06 1999-04-23 Canon Inc 固体撮像装置と信号検出装置と信号蓄積装置
JP2012119652A (ja) * 2010-03-17 2012-06-21 Fujifilm Corp 有機光電変換素子の製造方法、有機光電変換素子、撮像素子、撮像装置
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021057885A (ja) * 2019-09-26 2021-04-08 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
JP2024178190A (ja) * 2019-09-26 2024-12-24 パナソニックＩｐマネジメント株式会社 撮像装置
JP2021082785A (ja) * 2019-11-22 2021-05-27 日本放送協会 固体撮像素子および撮像装置
JP7526563B2 (ja) 2019-11-22 2024-08-01 日本放送協会 固体撮像素子および撮像装置、ならびに白キズ抑制方法
JP2021125492A (ja) * 2020-01-31 2021-08-30 キヤノン株式会社 半導体装置、表示装置、撮像システム及び移動体
JP7527797B2 (ja) 2020-01-31 2024-08-05 キヤノン株式会社 半導体装置、表示装置、撮像システム及び移動体

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US10728471B2 (en) 2020-07-28

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