JP2018098483A - 半導体素子及びその製造方法 - Google Patents
半導体素子及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000005530 etching Methods 0.000 claims description 2
- 210000003127 knee Anatomy 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000008186 active pharmaceutical agent Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- -1 boron (B) Chemical class 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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Abstract
Description
電力用半導体素子のうち、金属酸化膜半導体電界効果トランジスタ(MOSFET:metal oxide semiconductor field effect transistor)は、デジタル回路とアナログ回路で最も一般的な電界効果トランジスタである。
前記半導体素子は、前記n−型炭化ケイ素層上に形成された第1トレンチと、前記第1トレンチ内に形成されたゲート絶縁膜と、をさらに含み得る。
前記ゲート電極は、前記第1トレンチ内に形成され、前記補助n+型領域は、前記第1トレンチの側面に隣接し得る。
前記p型領域は、前記第1トレンチの側面に隣接し得る。
前記半導体素子は、前記ゲート電極及び前記補助電極と前記ソース電極との間に形成された絶縁膜をさらに含み得る。
前記半導体素子は、前記n−型炭化ケイ素層上に形成されて前記第1トレンチから離隔された第2トレンチをさらに含み得る。
前記p型領域は、前記第2トレンチの側面に隣接して前記第2トレンチの下部面まで延長され得る。
前記n+型領域は、前記第2トレンチの下部面に形成され得る。
前記補助電極は、前記補助n+型領域上から前記第2トレンチの側面に沿って前記第2トレンチの下部面まで延長され得る。
前記半導体素子は、前記n−型炭化ケイ素層、前記p型領域、及び前記補助n+型領域上に形成されたゲート絶縁膜をさらに含み得る。
前記ゲート電極は、前記ゲート絶縁膜上に形成され、前記補助電極は、前記ゲート絶縁膜の側面に位置し得る。
100 n+型炭化ケイ素基板
200 n−型炭化ケイ素層
210 第1トレンチ
220 第2トレンチ
300 p型領域
400 補助n+型領域
450 n+型領域
500 補助電極
610 ゲート絶縁膜
620 絶縁膜
700 ゲート電極
800 ソース電極
900 ドレイン電極
Claims (17)
- n+型炭化ケイ素基板の第1面上に形成されたn−型炭化ケイ素層と、
前記n−型炭化ケイ素層上に形成されたp型領域と、
前記p型領域の一部に隣接するか又は前記p型領域内に形成された補助n+型領域と、
前記p型領域内に形成されたn+型領域と、
前記補助n+型領域上及び前記p型領域上に形成された補助電極と、
前記補助電極から離隔されて前記n−型炭化ケイ素層上に形成されたゲート電極と、
前記補助電極及び前記ゲート電極から離隔されたソース電極と、
前記n+型炭化ケイ素基板の前記第1面に対向する第2面上に形成されたドレイン電極と、を備え、
前記補助n+型領域と前記n+型領域とは互いに離隔され、
前記ソース電極は、前記n+型領域に接触することを特徴とする半導体素子。 - 前記補助電極は、前記p型領域に接触することを特徴とする請求項1に記載の半導体素子。
- 前記n−型炭化ケイ素層上に形成された第1トレンチと、
前記第1トレンチ内に形成されたゲート絶縁膜と、をさらに含むことを特徴とする請求項2に記載の半導体素子。 - 前記ゲート電極は、前記第1トレンチ内に形成され、
前記補助n+型領域は、前記第1トレンチの側面に隣接することを特徴とする請求項3に記載の半導体素子。 - 前記p型領域は、前記第1トレンチの側面に隣接することを特徴とする請求項4に記載の半導体素子。
- 前記ゲート電極及び前記補助電極と前記ソース電極との間に形成された絶縁膜をさらに含むことを特徴とする請求項5に記載の半導体素子。
- 前記n−型炭化ケイ素層上に形成されて前記第1トレンチから離隔された第2トレンチをさらに含むことを特徴とする請求項6に記載の半導体素子。
- 前記p型領域は、前記第2トレンチの側面に隣接して前記第2トレンチの下部面まで延長されていることを特徴とする請求項7に記載の半導体素子。
- 前記n+型領域は、前記第2トレンチの下部面に形成されていることを特徴とする請求項8に記載の半導体素子。
- 前記補助電極は、前記補助n+型領域上から前記第2トレンチの側面に沿って前記第2トレンチの下部面まで延長されていることを特徴とする請求項9に記載の半導体素子。
- 前記n−型炭化ケイ素層、前記p型領域、及び前記補助n+型領域上に形成されたゲート絶縁膜をさらに含むことを特徴とする請求項1に記載の半導体素子。
- 前記ゲート電極は、前記ゲート絶縁膜上に形成され、
前記補助電極は、前記ゲート絶縁膜の側面に位置することを特徴とする請求項11に記載の半導体素子。 - 前記ゲート電極及び前記補助電極と前記ソース電極との間に形成された絶縁膜をさらに含むことを特徴とする請求項1に記載の半導体素子。
- n+型炭化ケイ素基板の第1面上にn−型炭化ケイ素層を形成する段階と、
前記n−型炭化ケイ素層をエッチングして互いに離隔される第1トレンチ及び第2トレンチを形成する段階と、
前記第2トレンチの側面に隣接して前記第2トレンチの下部面まで延長されるp型領域を形成する段階と、
前記p型領域及び前記n−型炭化ケイ素層上に補助n+型領域を形成する段階と、
前記補助n+型領域から離隔されるn+型領域を前記p型領域内に形成する段階と、
前記補助n+型領域上に補助電極を形成する段階と、
前記第1トレンチ内にゲート絶縁膜を形成する段階と、
前記ゲート絶縁膜上にゲート電極を形成する段階と、
前記ゲート電極及び前記補助電極上に絶縁膜を形成する段階と、
前記絶縁膜及び前記n+型領域上にソース電極を形成する段階と、
前記n+型炭化ケイ素基板の前記第1面に対向する第2面上にドレイン電極を形成する段階と、を有し、
前記補助電極は、前記ゲート電極及び前記ソース電極から離隔され、
前記ソース電極は、前記n+型領域に接触することを特徴とする半導体素子の製造方法。 - 前記補助電極は、前記p型領域に接触することを特徴とする請求項14に記載の半導体素子の製造方法。
- 前記n+型領域は、前記第2トレンチの下部面に形成されることを特徴とする請求項15に記載の半導体素子の製造方法。
- 前記補助電極は、前記補助n+型領域上から前記第2トレンチの側面に沿って前記第2トレンチの下部面まで延長されることを特徴とする請求項16に記載の半導体素子の製造方法。
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