JP2018019084A5 - - Google Patents
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- JP2018019084A5 JP2018019084A5 JP2017168422A JP2017168422A JP2018019084A5 JP 2018019084 A5 JP2018019084 A5 JP 2018019084A5 JP 2017168422 A JP2017168422 A JP 2017168422A JP 2017168422 A JP2017168422 A JP 2017168422A JP 2018019084 A5 JP2018019084 A5 JP 2018019084A5
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- Prior art keywords
- current control
- control transistor
- transistor
- light emitting
- electrically connected
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- 230000015572 biosynthetic process Effects 0.000 claims 9
- 238000005755 formation reaction Methods 0.000 claims 9
Claims (8)
電流制御用トランジスタと、
発光素子と、を有し、
前記スイッチング用トランジスタのソース又はドレインの一方は、第１の配線と電気的に接続され、
前記スイッチング用トランジスタのゲートは、第２の配線と電気的に接続され、
前記電流制御用トランジスタのソース又はドレインの一方は、前記発光素子の陽極と電気的に接続され、
前記電流制御用トランジスタのソース又はドレインの他方は、第３の配線と電気的に接続され、
前記電流制御用トランジスタのチャネル形成領域は、蛇行形状を有し、
前記電流制御用トランジスタは、飽和領域で動作することを特徴とする発光装置。 A switching transistor ;
A current control transistor ;
A light emitting element,
One of the source and the drain of the switching transistor is electrically connected to the first wiring,
A gate of the switching transistor is electrically connected to the second wiring;
One of the source and drain of the current control transistor is electrically connected to the anode of the light emitting element,
The other of the source and the drain of the current control transistor is electrically connected to a third wiring,
Channel forming region of the current controlling transistor has a meandering shape,
The light-emitting device , wherein the current control transistor operates in a saturation region .
電流制御用トランジスタと、A current control transistor;
発光素子と、を有し、A light emitting element,
前記スイッチング用トランジスタのソース又はドレインの一方は、第１の配線と電気的に接続され、One of the source and the drain of the switching transistor is electrically connected to the first wiring,
前記スイッチング用トランジスタのゲートは、第２の配線と電気的に接続され、A gate of the switching transistor is electrically connected to the second wiring;
前記電流制御用トランジスタのソース又はドレインの一方は、前記発光素子の陽極と電気的に接続され、One of the source and drain of the current control transistor is electrically connected to the anode of the light emitting element,
前記電流制御用トランジスタのソース又はドレインの他方は、第３の配線と電気的に接続され、The other of the source and the drain of the current control transistor is electrically connected to a third wiring,
前記電流制御用トランジスタのチャネル形成領域のチャネル長は、前記スイッチング用トランジスタのチャネル形成領域のチャネル長より長く、The channel length of the channel formation region of the current control transistor is longer than the channel length of the channel formation region of the switching transistor,
前記電流制御用トランジスタのチャネル形成領域は、前記チャネル長がチャネル幅より長くなるような形状を有し、The channel formation region of the current control transistor has a shape such that the channel length is longer than the channel width,
前記電流制御用トランジスタは、飽和領域で動作することを特徴とする発光装置。The light-emitting device, wherein the current control transistor operates in a saturation region.
電流制御用トランジスタと、
発光素子と、を有し、
前記スイッチング用トランジスタのソース又はドレインの一方は、第１の配線と電気的に接続され、
前記スイッチング用トランジスタのゲートは、第２の配線と電気的に接続され、
前記電流制御用トランジスタのソース又はドレインの一方は、前記発光素子の陰極と電気的に接続され、
前記電流制御用トランジスタのソース又はドレインの他方は、第３の配線と電気的に接続され、
前記電流制御用トランジスタのチャネル形成領域は、蛇行形状を有し、
前記電流制御用トランジスタは、飽和領域で動作することを特徴とする発光装置。 A switching transistor ;
A current control transistor ;
A light emitting element,
One of the source and the drain of the switching transistor is electrically connected to the first wiring,
A gate of the switching transistor is electrically connected to the second wiring;
One of the source or drain of the current control transistor is electrically connected to the cathode of the light emitting element,
The other of the source and the drain of the current control transistor is electrically connected to a third wiring,
Channel forming region of the current controlling transistor has a meandering shape,
The light-emitting device , wherein the current control transistor operates in a saturation region .
電流制御用トランジスタと、A current control transistor;
発光素子と、を有し、A light emitting element,
前記スイッチング用トランジスタのソース又はドレインの一方は、第１の配線と電気的に接続され、One of the source and the drain of the switching transistor is electrically connected to the first wiring,
前記スイッチング用トランジスタのゲートは、第２の配線と電気的に接続され、A gate of the switching transistor is electrically connected to the second wiring;
前記電流制御用トランジスタのソース又はドレインの一方は、前記発光素子の陰極と電気的に接続され、One of the source or drain of the current control transistor is electrically connected to the cathode of the light emitting element,
前記電流制御用トランジスタのソース又はドレインの他方は、第３の配線と電気的に接続され、The other of the source and the drain of the current control transistor is electrically connected to a third wiring,
前記電流制御用トランジスタのチャネル形成領域のチャネル長は、前記スイッチング用トランジスタのチャネル形成領域のチャネル長より長く、The channel length of the channel formation region of the current control transistor is longer than the channel length of the channel formation region of the switching transistor,
前記電流制御用トランジスタのチャネル形成領域は、前記チャネル長がチャネル幅より長くなるような形状を有し、The channel formation region of the current control transistor has a shape such that the channel length is longer than the channel width,
前記電流制御用トランジスタは、飽和領域で動作することを特徴とする発光装置。The light-emitting device, wherein the current control transistor operates in a saturation region.
発光素子と、を有し、
前記電流制御用トランジスタは、前記発光素子に電流を供給する機能を有し、
前記電流制御用トランジスタのチャネル形成領域は、蛇行形状を有し、
前記電流制御用トランジスタは、飽和領域で動作することを特徴とする発光装置。 A current control transistor ;
A light emitting element,
The current control transistor has a function of supplying a current to the light emitting element,
Channel forming region of the current controlling transistor has a meandering shape,
The light-emitting device , wherein the current control transistor operates in a saturation region .
発光素子と、を有し、A light emitting element,
前記電流制御用トランジスタは、前記発光素子に電流を供給する機能を有し、The current control transistor has a function of supplying a current to the light emitting element,
前記電流制御用トランジスタのチャネル形成領域は、チャネル長がチャネル幅より長くなるような形状を有し、The channel formation region of the current control transistor has a shape such that the channel length is longer than the channel width,
前記電流制御用トランジスタは、飽和領域で動作することを特徴とする発光装置。The light-emitting device, wherein the current control transistor operates in a saturation region.
発光素子と、を有し、A light emitting element,
前記電流制御用トランジスタは、前記発光素子に電流を供給する機能を有し、The current control transistor has a function of supplying a current to the light emitting element,
前記電流制御用トランジスタのチャネル形成領域は、蛇行形状を有することを特徴とする発光装置。The light emitting device according to claim 1, wherein a channel formation region of the current control transistor has a meandering shape.
発光素子と、を有し、A light emitting element,
前記電流制御用トランジスタは、前記発光素子に電流を供給する機能を有し、The current control transistor has a function of supplying a current to the light emitting element,
前記電流制御用トランジスタのチャネル形成領域は、チャネル長がチャネル幅より長くなるような形状を有することを特徴とする発光装置。The light emitting device according to claim 1, wherein a channel formation region of the current control transistor has a shape in which a channel length is longer than a channel width.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001344671 | 2001-11-09 | ||
| JP2001344671 | 2001-11-09 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016054981A Division JP2016136641A (en) | 2001-11-09 | 2016-03-18 | Light-emitting device |
Related Child Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018017185A Division JP6306808B1 (en) | 2001-11-09 | 2018-02-02 | Light emitting device |
| JP2018018864A Division JP6383507B2 (en) | 2001-11-09 | 2018-02-06 | Light emitting device |
| JP2018134240A Division JP6608008B2 (en) | 2001-11-09 | 2018-07-17 | Light emitting device |
| JP2018229341A Division JP2019071431A (en) | 2001-11-09 | 2018-12-06 | Light-emitting device |
| JP2018241382A Division JP6622893B2 (en) | 2001-11-09 | 2018-12-25 | Light emitting device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018019084A JP2018019084A (en) | 2018-02-01 |
| JP2018019084A5 true JP2018019084A5 (en) | 2018-08-30 |
| JP6514286B2 JP6514286B2 (en) | 2019-05-15 |
Family
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Family Applications (19)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008087530A Expired - Fee Related JP5111196B2 (en) | 2001-11-09 | 2008-03-28 | Semiconductor device |
| JP2012105184A Withdrawn JP2012195596A (en) | 2001-11-09 | 2012-05-02 | Light-emitting device |
| JP2012233881A Expired - Lifetime JP5459918B2 (en) | 2001-11-09 | 2012-10-23 | Semiconductor device |
| JP2013239679A Expired - Fee Related JP5679535B2 (en) | 2001-11-09 | 2013-11-20 | Light emitting device |
| JP2013239680A Expired - Lifetime JP5568678B2 (en) | 2001-11-09 | 2013-11-20 | Light emitting device |
| JP2014001793A Withdrawn JP2014099635A (en) | 2001-11-09 | 2014-01-08 | Light-emitting device |
| JP2014132514A Expired - Lifetime JP5917612B2 (en) | 2001-11-09 | 2014-06-27 | Light emitting device |
| JP2014231325A Expired - Lifetime JP5784209B2 (en) | 2001-11-09 | 2014-11-14 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
| JP2015094506A Expired - Lifetime JP6053067B2 (en) | 2001-11-09 | 2015-05-05 | Light emitting device and electronic device |
| JP2015106208A Expired - Lifetime JP6096832B2 (en) | 2001-11-09 | 2015-05-26 | Light emitting device |
| JP2016054981A Withdrawn JP2016136641A (en) | 2001-11-09 | 2016-03-18 | Light-emitting device |
| JP2017168422A Expired - Lifetime JP6514286B2 (en) | 2001-11-09 | 2017-09-01 | Light emitting device |
| JP2018017185A Expired - Lifetime JP6306808B1 (en) | 2001-11-09 | 2018-02-02 | Light emitting device |
| JP2018018864A Expired - Lifetime JP6383507B2 (en) | 2001-11-09 | 2018-02-06 | Light emitting device |
| JP2018134240A Expired - Lifetime JP6608008B2 (en) | 2001-11-09 | 2018-07-17 | Light emitting device |
| JP2018229341A Withdrawn JP2019071431A (en) | 2001-11-09 | 2018-12-06 | Light-emitting device |
| JP2018241382A Expired - Lifetime JP6622893B2 (en) | 2001-11-09 | 2018-12-25 | Light emitting device |
| JP2020135660A Expired - Lifetime JP7032625B2 (en) | 2001-11-09 | 2020-08-11 | Light emitting device |
| JP2020151903A Withdrawn JP2021013023A (en) | 2001-11-09 | 2020-09-10 | Light-emitting device |
Family Applications Before (11)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008087530A Expired - Fee Related JP5111196B2 (en) | 2001-11-09 | 2008-03-28 | Semiconductor device |
| JP2012105184A Withdrawn JP2012195596A (en) | 2001-11-09 | 2012-05-02 | Light-emitting device |
| JP2012233881A Expired - Lifetime JP5459918B2 (en) | 2001-11-09 | 2012-10-23 | Semiconductor device |
| JP2013239679A Expired - Fee Related JP5679535B2 (en) | 2001-11-09 | 2013-11-20 | Light emitting device |
| JP2013239680A Expired - Lifetime JP5568678B2 (en) | 2001-11-09 | 2013-11-20 | Light emitting device |
| JP2014001793A Withdrawn JP2014099635A (en) | 2001-11-09 | 2014-01-08 | Light-emitting device |
| JP2014132514A Expired - Lifetime JP5917612B2 (en) | 2001-11-09 | 2014-06-27 | Light emitting device |
| JP2014231325A Expired - Lifetime JP5784209B2 (en) | 2001-11-09 | 2014-11-14 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
| JP2015094506A Expired - Lifetime JP6053067B2 (en) | 2001-11-09 | 2015-05-05 | Light emitting device and electronic device |
| JP2015106208A Expired - Lifetime JP6096832B2 (en) | 2001-11-09 | 2015-05-26 | Light emitting device |
| JP2016054981A Withdrawn JP2016136641A (en) | 2001-11-09 | 2016-03-18 | Light-emitting device |
Family Applications After (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018017185A Expired - Lifetime JP6306808B1 (en) | 2001-11-09 | 2018-02-02 | Light emitting device |
| JP2018018864A Expired - Lifetime JP6383507B2 (en) | 2001-11-09 | 2018-02-06 | Light emitting device |
| JP2018134240A Expired - Lifetime JP6608008B2 (en) | 2001-11-09 | 2018-07-17 | Light emitting device |
| JP2018229341A Withdrawn JP2019071431A (en) | 2001-11-09 | 2018-12-06 | Light-emitting device |
| JP2018241382A Expired - Lifetime JP6622893B2 (en) | 2001-11-09 | 2018-12-25 | Light emitting device |
| JP2020135660A Expired - Lifetime JP7032625B2 (en) | 2001-11-09 | 2020-08-11 | Light emitting device |
| JP2020151903A Withdrawn JP2021013023A (en) | 2001-11-09 | 2020-09-10 | Light-emitting device |
Country Status (2)
| Country | Link |
|---|---|
| JP (19) | JP5111196B2 (en) |
| CN (1) | CN101009322B (en) |
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| TWI653755B (en) | 2013-09-12 | 2019-03-11 | 日商新力股份有限公司 | Display device, manufacturing method thereof, and electronic device |
| KR102238641B1 (en) * | 2014-12-26 | 2021-04-09 | 엘지디스플레이 주식회사 | Thin film transistor array substrate |
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| JP4925528B2 (en) * | 2000-09-29 | 2012-04-25 | 三洋電機株式会社 | Display device |
| JP3612494B2 (en) * | 2001-03-28 | 2005-01-19 | 株式会社日立製作所 | Display device |
| JP4149168B2 (en) * | 2001-11-09 | 2008-09-10 | 株式会社半導体エネルギー研究所 | Light emitting device |
-
2002
- 2002-11-09 CN CN200710085012.9A patent/CN101009322B/en not_active Expired - Lifetime
-
2008
- 2008-03-28 JP JP2008087530A patent/JP5111196B2/en not_active Expired - Fee Related
-
2012
- 2012-05-02 JP JP2012105184A patent/JP2012195596A/en not_active Withdrawn
- 2012-10-23 JP JP2012233881A patent/JP5459918B2/en not_active Expired - Lifetime
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2013
- 2013-11-20 JP JP2013239679A patent/JP5679535B2/en not_active Expired - Fee Related
- 2013-11-20 JP JP2013239680A patent/JP5568678B2/en not_active Expired - Lifetime
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2014
- 2014-01-08 JP JP2014001793A patent/JP2014099635A/en not_active Withdrawn
- 2014-06-27 JP JP2014132514A patent/JP5917612B2/en not_active Expired - Lifetime
- 2014-11-14 JP JP2014231325A patent/JP5784209B2/en not_active Expired - Lifetime
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2015
- 2015-05-05 JP JP2015094506A patent/JP6053067B2/en not_active Expired - Lifetime
- 2015-05-26 JP JP2015106208A patent/JP6096832B2/en not_active Expired - Lifetime
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2016
- 2016-03-18 JP JP2016054981A patent/JP2016136641A/en not_active Withdrawn
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2017
- 2017-09-01 JP JP2017168422A patent/JP6514286B2/en not_active Expired - Lifetime
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2018
- 2018-02-02 JP JP2018017185A patent/JP6306808B1/en not_active Expired - Lifetime
- 2018-02-06 JP JP2018018864A patent/JP6383507B2/en not_active Expired - Lifetime
- 2018-07-17 JP JP2018134240A patent/JP6608008B2/en not_active Expired - Lifetime
- 2018-12-06 JP JP2018229341A patent/JP2019071431A/en not_active Withdrawn
- 2018-12-25 JP JP2018241382A patent/JP6622893B2/en not_active Expired - Lifetime
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2020
- 2020-08-11 JP JP2020135660A patent/JP7032625B2/en not_active Expired - Lifetime
- 2020-09-10 JP JP2020151903A patent/JP2021013023A/en not_active Withdrawn
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