JP2017527115A5 - - Google Patents

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Publication number
JP2017527115A5
JP2017527115A5 JP2017507985A JP2017507985A JP2017527115A5 JP 2017527115 A5 JP2017527115 A5 JP 2017527115A5 JP 2017507985 A JP2017507985 A JP 2017507985A JP 2017507985 A JP2017507985 A JP 2017507985A JP 2017527115 A5 JP2017527115 A5 JP 2017527115A5
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Japan
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electrostatic chuck
chuck
content
ppm
chuck body
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JP2017507985A
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Japanese (ja)
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JP2017527115A (ja
JP6868553B2 (ja
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Priority claimed from PCT/US2015/044810 external-priority patent/WO2016025573A1/en
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Publication of JP2017527115A5 publication Critical patent/JP2017527115A5/ja
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JP2017507985A 2014-08-15 2015-08-12 プラズマ化学気相堆積システムにおいて高温で圧縮又は引張応力を有するウェハを処理する方法及び装置 Active JP6868553B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462038085P 2014-08-15 2014-08-15
US62/038,085 2014-08-15
PCT/US2015/044810 WO2016025573A1 (en) 2014-08-15 2015-08-12 Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system

Publications (3)

Publication Number Publication Date
JP2017527115A JP2017527115A (ja) 2017-09-14
JP2017527115A5 true JP2017527115A5 (https=) 2018-09-20
JP6868553B2 JP6868553B2 (ja) 2021-05-12

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JP2017507985A Active JP6868553B2 (ja) 2014-08-15 2015-08-12 プラズマ化学気相堆積システムにおいて高温で圧縮又は引張応力を有するウェハを処理する方法及び装置

Country Status (5)

Country Link
US (1) US10403535B2 (https=)
JP (1) JP6868553B2 (https=)
KR (1) KR102430454B1 (https=)
CN (2) CN106575634A (https=)
WO (1) WO2016025573A1 (https=)

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