CN106575634A - 在等离子体增强化学气相沉积系统中于高温下使用压缩应力或拉伸应力处理晶片的方法和装置 - Google Patents

在等离子体增强化学气相沉积系统中于高温下使用压缩应力或拉伸应力处理晶片的方法和装置 Download PDF

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Publication number
CN106575634A
CN106575634A CN201580043795.7A CN201580043795A CN106575634A CN 106575634 A CN106575634 A CN 106575634A CN 201580043795 A CN201580043795 A CN 201580043795A CN 106575634 A CN106575634 A CN 106575634A
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CN
China
Prior art keywords
substrate
ppm
chuck
electrostatic chuck
esc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201580043795.7A
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English (en)
Chinese (zh)
Inventor
Z·J·叶
J·D·平森二世
塙广二
周建华
林兴
段仁官
K·D·李
金柏涵
S·P·贝海拉
S·哈
G·巴拉苏布拉马尼恩
J·C·罗查-阿尔瓦雷斯
P·K·库尔施拉希萨
J·K·福斯特
M·斯利尼瓦萨恩
U·P·哈勒
H·K·博尼坎帝
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN202111232228.XA priority Critical patent/CN113972162A/zh
Publication of CN106575634A publication Critical patent/CN106575634A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN201580043795.7A 2014-08-15 2015-08-12 在等离子体增强化学气相沉积系统中于高温下使用压缩应力或拉伸应力处理晶片的方法和装置 Pending CN106575634A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111232228.XA CN113972162A (zh) 2014-08-15 2015-08-12 在等离子体增强化学气相沉积系统中高温下使用压缩应力或拉伸应力处理晶片的方法和装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462038085P 2014-08-15 2014-08-15
US62/038,085 2014-08-15
PCT/US2015/044810 WO2016025573A1 (en) 2014-08-15 2015-08-12 Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system

Related Child Applications (1)

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CN202111232228.XA Division CN113972162A (zh) 2014-08-15 2015-08-12 在等离子体增强化学气相沉积系统中高温下使用压缩应力或拉伸应力处理晶片的方法和装置

Publications (1)

Publication Number Publication Date
CN106575634A true CN106575634A (zh) 2017-04-19

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Family Applications (2)

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CN201580043795.7A Pending CN106575634A (zh) 2014-08-15 2015-08-12 在等离子体增强化学气相沉积系统中于高温下使用压缩应力或拉伸应力处理晶片的方法和装置
CN202111232228.XA Pending CN113972162A (zh) 2014-08-15 2015-08-12 在等离子体增强化学气相沉积系统中高温下使用压缩应力或拉伸应力处理晶片的方法和装置

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CN202111232228.XA Pending CN113972162A (zh) 2014-08-15 2015-08-12 在等离子体增强化学气相沉积系统中高温下使用压缩应力或拉伸应力处理晶片的方法和装置

Country Status (5)

Country Link
US (1) US10403535B2 (https=)
JP (1) JP6868553B2 (https=)
KR (1) KR102430454B1 (https=)
CN (2) CN106575634A (https=)
WO (1) WO2016025573A1 (https=)

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CN110707028A (zh) * 2019-10-18 2020-01-17 长江存储科技有限责任公司 晶圆热处理装置及晶圆热处理方法
CN111095522A (zh) * 2017-10-09 2020-05-01 应用材料公司 用于无损衬底处理的静电吸盘
CN111293023A (zh) * 2018-12-07 2020-06-16 应用材料公司 形成在用于等离子体处理腔室的静电吸盘中的接地电极
CN111886688A (zh) * 2018-03-20 2020-11-03 朗姆研究公司 静电卡盘的保护涂层
CN112166497A (zh) * 2018-06-22 2021-01-01 应用材料公司 半导体晶片处理中最小化晶片背侧损伤的方法
CN113166942A (zh) * 2018-12-14 2021-07-23 应用材料公司 用于等离子体增强化学气相沉积的膜应力控制
US20210242062A1 (en) * 2018-02-28 2021-08-05 Mico Ceramics Ltd. Electrostatic chuck heater and manufacturing method therefor
CN114556542A (zh) * 2019-10-08 2022-05-27 朗姆研究公司 用于衬底处理系统的衬底支撑件的加热器元件的电源隔离电路
CN115247257A (zh) * 2021-04-25 2022-10-28 广东聚华印刷显示技术有限公司 成膜装置及膜层的制备方法
CN115769361A (zh) * 2020-07-06 2023-03-07 应用材料公司 具有改进的温度控制的静电卡盘
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CN113820531B (zh) * 2020-06-19 2024-07-12 拓荆科技股份有限公司 一种射频系统状态受控的半导体设备
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US20160049323A1 (en) 2016-02-18
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