JP2017518645A5 - - Google Patents
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- Publication number
- JP2017518645A5 JP2017518645A5 JP2016571169A JP2016571169A JP2017518645A5 JP 2017518645 A5 JP2017518645 A5 JP 2017518645A5 JP 2016571169 A JP2016571169 A JP 2016571169A JP 2016571169 A JP2016571169 A JP 2016571169A JP 2017518645 A5 JP2017518645 A5 JP 2017518645A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- etching
- hexafluoro
- pentafluoropropene
- fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 10
- 229910052710 silicon Inorganic materials 0.000 claims 10
- 239000010703 silicon Substances 0.000 claims 10
- 238000005530 etching Methods 0.000 claims 7
- 239000012530 fluid Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 4
- 229920000642 polymer Polymers 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- DMUPYMORYHFFCT-UPHRSURJSA-N (z)-1,2,3,3,3-pentafluoroprop-1-ene Chemical compound F\C=C(/F)C(F)(F)F DMUPYMORYHFFCT-UPHRSURJSA-N 0.000 claims 2
- LMSLTAIWOIYSGZ-XIXRPRMCSA-N (3s,4r)-1,1,2,2,3,4-hexafluorocyclobutane Chemical compound F[C@H]1[C@@H](F)C(F)(F)C1(F)F LMSLTAIWOIYSGZ-XIXRPRMCSA-N 0.000 claims 1
- LMSLTAIWOIYSGZ-LWMBPPNESA-N (3s,4s)-1,1,2,2,3,4-hexafluorocyclobutane Chemical compound F[C@H]1[C@H](F)C(F)(F)C1(F)F LMSLTAIWOIYSGZ-LWMBPPNESA-N 0.000 claims 1
- NLOLSXYRJFEOTA-OWOJBTEDSA-N (e)-1,1,1,4,4,4-hexafluorobut-2-ene Chemical compound FC(F)(F)\C=C\C(F)(F)F NLOLSXYRJFEOTA-OWOJBTEDSA-N 0.000 claims 1
- DMUPYMORYHFFCT-OWOJBTEDSA-N (e)-1,2,3,3,3-pentafluoroprop-1-ene Chemical compound F\C=C(\F)C(F)(F)F DMUPYMORYHFFCT-OWOJBTEDSA-N 0.000 claims 1
- YIFLMZOLKQBEBO-UPHRSURJSA-N (z)-1,1,1,2,4,4,4-heptafluorobut-2-ene Chemical compound FC(F)(F)C(/F)=C/C(F)(F)F YIFLMZOLKQBEBO-UPHRSURJSA-N 0.000 claims 1
- LTVIWHSKXRWJJN-UPHRSURJSA-N (z)-1,1,1,2,4,4-hexafluorobut-2-ene Chemical compound FC(F)\C=C(/F)C(F)(F)F LTVIWHSKXRWJJN-UPHRSURJSA-N 0.000 claims 1
- NLOLSXYRJFEOTA-UPHRSURJSA-N (z)-1,1,1,4,4,4-hexafluorobut-2-ene Chemical compound FC(F)(F)\C=C/C(F)(F)F NLOLSXYRJFEOTA-UPHRSURJSA-N 0.000 claims 1
- NUPBXTZOBYEVIR-UHFFFAOYSA-N 1,1,2,3,3,4,4-heptafluorobut-1-ene Chemical compound FC(F)C(F)(F)C(F)=C(F)F NUPBXTZOBYEVIR-UHFFFAOYSA-N 0.000 claims 1
- NDMMKOCNFSTXRU-UHFFFAOYSA-N 1,1,2,3,3-pentafluoroprop-1-ene Chemical compound FC(F)C(F)=C(F)F NDMMKOCNFSTXRU-UHFFFAOYSA-N 0.000 claims 1
- QAERDLQYXMEHEB-UHFFFAOYSA-N 1,1,3,3,3-pentafluoroprop-1-ene Chemical compound FC(F)=CC(F)(F)F QAERDLQYXMEHEB-UHFFFAOYSA-N 0.000 claims 1
- FAOACLKUNWKVPH-UHFFFAOYSA-N 2,3,3,4,4,4-hexafluorobut-1-ene Chemical compound FC(=C)C(F)(F)C(F)(F)F FAOACLKUNWKVPH-UHFFFAOYSA-N 0.000 claims 1
- QMIWYOZFFSLIAK-UHFFFAOYSA-N 3,3,3-trifluoro-2-(trifluoromethyl)prop-1-ene Chemical compound FC(F)(F)C(=C)C(F)(F)F QMIWYOZFFSLIAK-UHFFFAOYSA-N 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462013959P | 2014-06-18 | 2014-06-18 | |
| US62/013,959 | 2014-06-18 | ||
| PCT/JP2015/003044 WO2015194178A1 (en) | 2014-06-18 | 2015-06-17 | Chemistries for tsv/mems/power device etching |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017518645A JP2017518645A (ja) | 2017-07-06 |
| JP2017518645A5 true JP2017518645A5 (show.php) | 2018-06-07 |
| JP6485972B2 JP6485972B2 (ja) | 2019-03-20 |
Family
ID=54935182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016571169A Active JP6485972B2 (ja) | 2014-06-18 | 2015-06-17 | Ｔｓｖ／ｍｅｍｓ／パワーデバイスエッチング用の化学物質 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US9892932B2 (show.php) |
| EP (1) | EP3158579A4 (show.php) |
| JP (1) | JP6485972B2 (show.php) |
| KR (3) | KR102539241B1 (show.php) |
| CN (2) | CN106663624B (show.php) |
| SG (1) | SG11201610342YA (show.php) |
| TW (3) | TWI658509B (show.php) |
| WO (1) | WO2015194178A1 (show.php) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12550660B2 (en) | 2018-03-16 | 2026-02-10 | Lam Research Corporation | Plasma etching chemistries of high aspect ratio features in dielectrics |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI658509B (zh) * | 2014-06-18 | 2019-05-01 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質 |
| EP3375008B1 (en) | 2015-11-10 | 2020-05-20 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Plasma-free etching process |
| JP6587580B2 (ja) * | 2016-06-10 | 2019-10-09 | 東京エレクトロン株式会社 | エッチング処理方法 |
| EP3608945A4 (en) * | 2017-04-06 | 2020-12-23 | Kanto Denka Kogyo Co., Ltd. | COMPOSITION OF DRY ENGRAVING GAS AND DRY ENGRAVING PROCESS |
| WO2018226501A1 (en) * | 2017-06-08 | 2018-12-13 | Tokyo Electron Limited | Method of plasma etching of silicon-containing organic film using sulfur-based chemistry |
| TWI757545B (zh) * | 2017-09-15 | 2022-03-11 | 日商關東電化工業股份有限公司 | 使用酸鹵化物之原子層蝕刻 |
| US10607999B2 (en) * | 2017-11-03 | 2020-03-31 | Varian Semiconductor Equipment Associates, Inc. | Techniques and structure for forming dynamic random access device |
| KR102504833B1 (ko) * | 2017-11-16 | 2023-03-02 | 삼성전자 주식회사 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법과 집적회로 소자의 제조 방법 |
| JP7145031B2 (ja) | 2017-12-25 | 2022-09-30 | 東京エレクトロン株式会社 | 基板を処理する方法、プラズマ処理装置、及び基板処理装置 |
| KR102450580B1 (ko) | 2017-12-22 | 2022-10-07 | 삼성전자주식회사 | 금속 배선 하부의 절연층 구조를 갖는 반도체 장치 |
| CN110010464B (zh) * | 2017-12-25 | 2023-07-14 | 东京毅力科创株式会社 | 处理基板的方法 |
| JP6874778B2 (ja) * | 2019-01-09 | 2021-05-19 | ダイキン工業株式会社 | シクロブタンの製造方法 |
| KR102419373B1 (ko) * | 2019-04-19 | 2022-07-12 | 주식회사 히타치하이테크 | 플라스마 처리 방법 |
| US11456180B2 (en) | 2019-11-08 | 2022-09-27 | Tokyo Electron Limited | Etching method |
| SG10202010798QA (en) * | 2019-11-08 | 2021-06-29 | Tokyo Electron Ltd | Etching method and plasma processing apparatus |
| JP6990799B2 (ja) | 2019-11-08 | 2022-02-03 | 東京エレクトロン株式会社 | エッチング方法、プラズマ処理装置、処理ガス、デバイスの製造方法、プログラム、及び記憶媒体 |
| WO2021090516A1 (ja) * | 2019-11-08 | 2021-05-14 | 東京エレクトロン株式会社 | エッチング方法 |
| CN112786441B (zh) | 2019-11-08 | 2026-01-23 | 东京毅力科创株式会社 | 蚀刻方法及等离子体处理装置 |
| KR102389081B1 (ko) * | 2020-04-06 | 2022-04-20 | 아주대학교산학협력단 | PIPVE(perfluoroisopropyl vinyl ether)를 이용한 플라즈마 식각 방법 |
| KR102388963B1 (ko) * | 2020-05-07 | 2022-04-20 | 아주대학교산학협력단 | 퍼플루오로프로필카비놀(Perfluoropropyl carbinol)을 이용한 플라즈마 식각 방법 |
| KR102244862B1 (ko) * | 2020-08-04 | 2021-04-27 | (주)원익머트리얼즈 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법 |
| US20230230810A1 (en) * | 2020-10-05 | 2023-07-20 | Spp Technologies Co., Ltd. | Plasma processing gas, plasma processing method, and plasma processing apparatus |
| JPWO2022080274A1 (show.php) * | 2020-10-15 | 2022-04-21 | ||
| CN116368111A (zh) * | 2020-10-15 | 2023-06-30 | 株式会社力森诺科 | 氟-2-丁烯的保存方法 |
| JP7775835B2 (ja) * | 2020-10-15 | 2025-11-26 | 株式会社レゾナック | エッチングガス及びその製造方法、並びに、エッチング方法、半導体素子の製造方法 |
| US20230373888A1 (en) * | 2020-10-15 | 2023-11-23 | Resonac Corporation | Method for storing fluoro-2-butene |
| JPWO2022080269A1 (show.php) * | 2020-10-15 | 2022-04-21 | ||
| WO2022210043A1 (ja) * | 2021-03-30 | 2022-10-06 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| KR20240003432A (ko) | 2021-05-07 | 2024-01-09 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 에칭 장치 |
| WO2022234647A1 (ja) * | 2021-05-07 | 2022-11-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| WO2025182815A1 (ja) * | 2024-02-27 | 2025-09-04 | セントラル硝子株式会社 | エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物 |
| EP4682942A1 (en) * | 2024-03-01 | 2026-01-21 | Daikin Industries, Ltd. | Deposition gas |
| WO2025258395A1 (ja) * | 2024-06-11 | 2025-12-18 | セントラル硝子株式会社 | エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物 |
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| WO2014070838A1 (en) | 2012-10-30 | 2014-05-08 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Fluorocarbon molecules for high aspect ratio oxide etch |
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| JP6017936B2 (ja) * | 2012-11-27 | 2016-11-02 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| CN105917025A (zh) | 2013-03-28 | 2016-08-31 | 得凯莫斯公司弗罗里达有限公司 | 氢氟烯烃蚀刻气体混合物 |
| TWI612182B (zh) | 2013-09-09 | 2018-01-21 | 液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用蝕刻氣體蝕刻半導體結構的方法 |
| JP6358263B2 (ja) | 2013-10-09 | 2018-07-18 | 旭硝子株式会社 | ２，３，３，３−テトラフルオロプロペンの精製方法 |
| TWI658509B (zh) * | 2014-06-18 | 2019-05-01 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質 |
-
2015
- 2015-06-12 TW TW104119063A patent/TWI658509B/zh active
- 2015-06-12 TW TW109114840A patent/TWI733431B/zh active
- 2015-06-12 TW TW108109359A patent/TWI695423B/zh active
- 2015-06-17 JP JP2016571169A patent/JP6485972B2/ja active Active
- 2015-06-17 KR KR1020227030041A patent/KR102539241B1/ko active Active
- 2015-06-17 EP EP15808907.8A patent/EP3158579A4/en not_active Withdrawn
- 2015-06-17 WO PCT/JP2015/003044 patent/WO2015194178A1/en not_active Ceased
- 2015-06-17 KR KR1020237017666A patent/KR102679289B1/ko active Active
- 2015-06-17 KR KR1020177000840A patent/KR102444697B1/ko active Active
- 2015-06-17 SG SG11201610342YA patent/SG11201610342YA/en unknown
- 2015-06-17 CN CN201580031726.4A patent/CN106663624B/zh active Active
- 2015-06-17 US US15/316,932 patent/US9892932B2/en active Active
- 2015-06-17 CN CN202010698443.8A patent/CN111816559B/zh active Active
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2017
- 2017-09-08 US US15/699,668 patent/US10103031B2/en active Active
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2018
- 2018-08-28 US US16/114,371 patent/US10720335B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12550660B2 (en) | 2018-03-16 | 2026-02-10 | Lam Research Corporation | Plasma etching chemistries of high aspect ratio features in dielectrics |