JP2017516296A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2017516296A5 JP2017516296A5 JP2016558692A JP2016558692A JP2017516296A5 JP 2017516296 A5 JP2017516296 A5 JP 2017516296A5 JP 2016558692 A JP2016558692 A JP 2016558692A JP 2016558692 A JP2016558692 A JP 2016558692A JP 2017516296 A5 JP2017516296 A5 JP 2017516296A5
- Authority
- JP
- Japan
- Prior art keywords
- acid
- colloidal silica
- silica abrasive
- composition
- particle size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 239000008119 colloidal silica Substances 0.000 claims description 33
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 29
- 229910052742 iron Inorganic materials 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 13
- 239000003054 catalyst Substances 0.000 claims description 7
- 239000003381 stabilizer Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 23
- 238000005498 polishing Methods 0.000 claims 11
- 238000000034 method Methods 0.000 claims 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 6
- -1 aminosilane compound Chemical class 0.000 claims 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 6
- 239000007788 liquid Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims 4
- 150000001412 amines Chemical class 0.000 claims 4
- TXXHDPDFNKHHGW-UHFFFAOYSA-N muconic acid Chemical compound OC(=O)C=CC=CC(O)=O TXXHDPDFNKHHGW-UHFFFAOYSA-N 0.000 claims 4
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 claims 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims 4
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 claims 4
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 claims 4
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- 239000010937 tungsten Substances 0.000 claims 4
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- XVOUMQNXTGKGMA-OWOJBTEDSA-N (E)-glutaconic acid Chemical compound OC(=O)C\C=C\C(O)=O XVOUMQNXTGKGMA-OWOJBTEDSA-N 0.000 claims 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims 2
- TXXHDPDFNKHHGW-CCAGOZQPSA-N Muconic acid Natural products OC(=O)\C=C/C=C\C(O)=O TXXHDPDFNKHHGW-CCAGOZQPSA-N 0.000 claims 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims 2
- 239000001361 adipic acid Substances 0.000 claims 2
- 235000011037 adipic acid Nutrition 0.000 claims 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims 2
- 235000003704 aspartic acid Nutrition 0.000 claims 2
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims 2
- 235000015165 citric acid Nutrition 0.000 claims 2
- 239000003112 inhibitor Substances 0.000 claims 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims 2
- 239000011976 maleic acid Substances 0.000 claims 2
- 235000006408 oxalic acid Nutrition 0.000 claims 2
- 239000007800 oxidant agent Substances 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- 239000011164 primary particle Substances 0.000 claims 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims 2
- XNCSCQSQSGDGES-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)C(C)CN(CC(O)=O)CC(O)=O XNCSCQSQSGDGES-UHFFFAOYSA-N 0.000 claims 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims 1
- VYTBPJNGNGMRFH-UHFFFAOYSA-N acetic acid;azane Chemical compound N.N.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O VYTBPJNGNGMRFH-UHFFFAOYSA-N 0.000 claims 1
- KXHPPCXNWTUNSB-UHFFFAOYSA-M benzyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CC1=CC=CC=C1 KXHPPCXNWTUNSB-UHFFFAOYSA-M 0.000 claims 1
- 239000004202 carbamide Substances 0.000 claims 1
- 125000006264 diethylaminomethyl group Chemical group [H]C([H])([H])C([H])([H])N(C([H])([H])*)C([H])([H])C([H])([H])[H] 0.000 claims 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims 1
- 238000007790 scraping Methods 0.000 claims 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims 1
- 125000005369 trialkoxysilyl group Chemical group 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/222,736 | 2014-03-24 | ||
| US14/222,736 US9303190B2 (en) | 2014-03-24 | 2014-03-24 | Mixed abrasive tungsten CMP composition |
| PCT/US2015/021674 WO2015148295A1 (en) | 2014-03-24 | 2015-03-20 | Mixed abrasive tungsten cmp composition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017516296A JP2017516296A (ja) | 2017-06-15 |
| JP2017516296A5 true JP2017516296A5 (OSRAM) | 2018-04-19 |
| JP6633540B2 JP6633540B2 (ja) | 2020-01-22 |
Family
ID=54141490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016558692A Active JP6633540B2 (ja) | 2014-03-24 | 2015-03-20 | 混合研磨剤タングステンｃｍｐ組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9303190B2 (OSRAM) |
| EP (1) | EP3123498B1 (OSRAM) |
| JP (1) | JP6633540B2 (OSRAM) |
| KR (1) | KR102390111B1 (OSRAM) |
| CN (1) | CN106415796B (OSRAM) |
| TW (1) | TWI545184B (OSRAM) |
| WO (1) | WO2015148295A1 (OSRAM) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106661429B (zh) * | 2014-08-26 | 2019-07-05 | 凯斯科技股份有限公司 | 抛光浆料组合物 |
| US10570313B2 (en) * | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
| US10077381B2 (en) | 2015-07-20 | 2018-09-18 | Kctech Co., Ltd. | Polishing slurry composition |
| US9631122B1 (en) * | 2015-10-28 | 2017-04-25 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant |
| JP6955014B2 (ja) * | 2016-09-28 | 2021-10-27 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 第四級ホスホニウム化合物を含有する方法及び組成物を使用したタングステンの化学機械研磨 |
| KR20190057085A (ko) * | 2016-09-29 | 2019-05-27 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | 텅스텐을 위한 화학적 기계 연마 방법 |
| KR20190057330A (ko) | 2016-09-29 | 2019-05-28 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | 텅스텐의 화학 기계적 연마 방법 |
| JP6936316B2 (ja) * | 2016-09-29 | 2021-09-15 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | タングステンのための化学機械研磨法 |
| US20180094166A1 (en) * | 2016-09-30 | 2018-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cmp polishing composition comprising positive and negative silica particles |
| US9803108B1 (en) | 2016-10-19 | 2017-10-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous compositions of stabilized aminosilane group containing silica particles |
| US9783702B1 (en) | 2016-10-19 | 2017-10-10 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Aqueous compositions of low abrasive silica particles |
| KR102798940B1 (ko) * | 2016-12-05 | 2025-04-25 | 솔브레인 주식회사 | 화학적 기계적 연마 슬러리 조성물 및 이를 이용한 반도체 소자의 제조방법 |
| US9984895B1 (en) * | 2017-01-31 | 2018-05-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| US10181408B2 (en) * | 2017-01-31 | 2019-01-15 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten using polyglycols and polyglycol derivatives |
| WO2018191454A1 (en) * | 2017-04-14 | 2018-10-18 | Cabot Microelectronics Corporation | Chemical-mechanical processing slurry and methods |
| US10221336B2 (en) * | 2017-06-16 | 2019-03-05 | rohm and Hass Electronic Materials CMP Holdings, Inc. | Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them |
| KR20200032024A (ko) * | 2017-08-03 | 2020-03-25 | 제이에스알 가부시끼가이샤 | 반도체 처리용 조성물 및 처리 방법 |
| US10600655B2 (en) | 2017-08-10 | 2020-03-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| US10316218B2 (en) * | 2017-08-30 | 2019-06-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them |
| KR102662567B1 (ko) * | 2017-09-15 | 2024-05-16 | 씨엠씨 머티리얼즈 엘엘씨 | 텅스텐 cmp용 조성물 |
| US20190185713A1 (en) * | 2017-12-14 | 2019-06-20 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cmp slurry compositions containing silica with trimethylsulfoxonium cations |
| US10647887B2 (en) * | 2018-01-08 | 2020-05-12 | Cabot Microelectronics Corporation | Tungsten buff polishing compositions with improved topography |
| CN108789163A (zh) * | 2018-05-30 | 2018-11-13 | 郑州合晶硅材料有限公司 | 一种硅片背面抛光用装置及抛光方法 |
| SG10201904669TA (en) * | 2018-06-28 | 2020-01-30 | Kctech Co Ltd | Polishing Slurry Composition |
| US10968366B2 (en) * | 2018-12-04 | 2021-04-06 | Cmc Materials, Inc. | Composition and method for metal CMP |
| US20200172759A1 (en) * | 2018-12-04 | 2020-06-04 | Cabot Microelectronics Corporation | Composition and method for cobalt cmp |
| US12227673B2 (en) * | 2018-12-04 | 2025-02-18 | Cmc Materials Llc | Composition and method for silicon nitride CMP |
| CN111378375B (zh) * | 2018-12-28 | 2022-05-13 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| US10676647B1 (en) * | 2018-12-31 | 2020-06-09 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| CN113544093B (zh) * | 2019-03-06 | 2024-07-26 | 扶桑化学工业株式会社 | 胶体二氧化硅及其制造方法 |
| KR102258900B1 (ko) * | 2019-04-22 | 2021-06-02 | 주식회사 케이씨텍 | 금속막 연마용 슬러리 조성물 |
| US11597854B2 (en) * | 2019-07-16 | 2023-03-07 | Cmc Materials, Inc. | Method to increase barrier film removal rate in bulk tungsten slurry |
| WO2021202500A1 (en) * | 2020-03-31 | 2021-10-07 | Cmc Materials, Inc. | Cmp composition including a novel abrasive |
| KR102851125B1 (ko) * | 2021-03-31 | 2025-08-28 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| KR20240145790A (ko) | 2023-03-28 | 2024-10-07 | 고등기술연구원연구조합 | 실리카 나노 분말 및 웨이퍼의 화학기계 연마용 슬러리 제조 방법 |
Family Cites Families (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| US5958288A (en) | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6083419A (en) | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| JP3195569B2 (ja) * | 1997-08-11 | 2001-08-06 | 守 磯 | 繭型コロイダルシリカの製造方法 |
| US5942015A (en) | 1997-09-16 | 1999-08-24 | 3M Innovative Properties Company | Abrasive slurries and abrasive articles comprising multiple abrasive particle grades |
| JP3810588B2 (ja) | 1998-06-22 | 2006-08-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP3523107B2 (ja) | 1999-03-17 | 2004-04-26 | 株式会社東芝 | Ｃｍｐ用スラリおよびｃｍｐ法 |
| DE60030444T2 (de) | 1999-07-07 | 2006-12-14 | Cabot Microelectronics Corp., Aurora | Cmp-zusammensetzung enthaltend silanmodifizierte-schleifteilchen |
| US6334880B1 (en) | 1999-12-07 | 2002-01-01 | Silbond Corporation | Abrasive media and aqueous slurries for chemical mechanical polishing and planarization |
| US6646348B1 (en) | 2000-07-05 | 2003-11-11 | Cabot Microelectronics Corporation | Silane containing polishing composition for CMP |
| JP4435391B2 (ja) | 2000-08-04 | 2010-03-17 | 扶桑化学工業株式会社 | コロイド状シリカスラリー |
| DE10065027A1 (de) | 2000-12-23 | 2002-07-04 | Degussa | Wäßrige Dispersion, Verfahren zu deren Herstellung und Verwendung |
| US6656241B1 (en) | 2001-06-14 | 2003-12-02 | Ppg Industries Ohio, Inc. | Silica-based slurry |
| TW591089B (en) | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
| US20030092271A1 (en) | 2001-09-13 | 2003-05-15 | Nyacol Nano Technologies, Inc. | Shallow trench isolation polishing using mixed abrasive slurries |
| US20030211747A1 (en) | 2001-09-13 | 2003-11-13 | Nyacol Nano Technologies, Inc | Shallow trench isolation polishing using mixed abrasive slurries |
| US7077880B2 (en) | 2004-01-16 | 2006-07-18 | Dupont Air Products Nanomaterials Llc | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
| DE10164262A1 (de) | 2001-12-27 | 2003-07-17 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen |
| US20030162398A1 (en) | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| US6776810B1 (en) | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US6682575B2 (en) | 2002-03-05 | 2004-01-27 | Cabot Microelectronics Corporation | Methanol-containing silica-based CMP compositions |
| US7056449B2 (en) | 2002-08-14 | 2006-06-06 | Rohm And Haas Company | Aqueous silica dispersion |
| TWI307712B (en) * | 2002-08-28 | 2009-03-21 | Kao Corp | Polishing composition |
| US6896591B2 (en) | 2003-02-11 | 2005-05-24 | Cabot Microelectronics Corporation | Mixed-abrasive polishing composition and method for using the same |
| US7044836B2 (en) | 2003-04-21 | 2006-05-16 | Cabot Microelectronics Corporation | Coated metal oxide particles for CMP |
| KR20060015723A (ko) | 2003-05-09 | 2006-02-20 | 산요가세이고교 가부시키가이샤 | 씨엠피 프로세스용 연마액 및 연마방법 |
| US8309615B2 (en) | 2003-08-04 | 2012-11-13 | Rohm And Haas Company | Aqueous silica dispersion |
| US7018560B2 (en) | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| US7022255B2 (en) | 2003-10-10 | 2006-04-04 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition with nitrogen containing polymer and method for use |
| KR20050073044A (ko) | 2004-01-08 | 2005-07-13 | 매그나칩 반도체 유한회사 | 화학적기계연마 방법 |
| US7247567B2 (en) | 2004-06-16 | 2007-07-24 | Cabot Microelectronics Corporation | Method of polishing a tungsten-containing substrate |
| US7056192B2 (en) | 2004-09-14 | 2006-06-06 | International Business Machines Corporation | Ceria-based polish processes, and ceria-based slurries |
| US20060096179A1 (en) | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
| US20060124592A1 (en) | 2004-12-09 | 2006-06-15 | Miller Anne E | Chemical mechanical polish slurry |
| EP1899111A2 (en) | 2005-06-06 | 2008-03-19 | Advanced Technology Materials, Inc. | Integrated chemical mechanical polishing composition and process for single platen processing |
| JP2007095946A (ja) * | 2005-09-28 | 2007-04-12 | Fujifilm Corp | 金属用研磨液及び研磨方法 |
| US20070075042A1 (en) | 2005-10-05 | 2007-04-05 | Siddiqui Junaid A | Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method |
| KR20070088245A (ko) | 2006-02-24 | 2007-08-29 | 후지필름 가부시키가이샤 | 금속용 연마액 |
| KR100832993B1 (ko) * | 2006-04-14 | 2008-05-27 | 주식회사 엘지화학 | Ｃｍｐ 슬러리용 보조제 |
| US8163049B2 (en) | 2006-04-18 | 2012-04-24 | Dupont Air Products Nanomaterials Llc | Fluoride-modified silica sols for chemical mechanical planarization |
| US8961677B2 (en) | 2006-04-26 | 2015-02-24 | Silbond Corporation | Suspension of nanoparticles and method for making the same |
| US7585340B2 (en) | 2006-04-27 | 2009-09-08 | Cabot Microelectronics Corporation | Polishing composition containing polyether amine |
| WO2007146680A1 (en) | 2006-06-06 | 2007-12-21 | Florida State University Research Foundation , Inc. | Stabilized silica colloid |
| JP4836731B2 (ja) | 2006-07-18 | 2011-12-14 | 旭硝子株式会社 | 磁気ディスク用ガラス基板の製造方法 |
| WO2008015943A1 (fr) | 2006-07-31 | 2008-02-07 | Fuso Chemical Co.Ltd. | Sol de silice et son procédé de production |
| US7691287B2 (en) | 2007-01-31 | 2010-04-06 | Dupont Air Products Nanomaterials Llc | Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization |
| JP5322455B2 (ja) | 2007-02-26 | 2013-10-23 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| JPWO2008123373A1 (ja) | 2007-03-27 | 2010-07-15 | 扶桑化学工業株式会社 | コロイダルシリカ及びその製造方法 |
| JP2008288398A (ja) * | 2007-05-18 | 2008-11-27 | Nippon Chem Ind Co Ltd | 半導体ウェハーの研磨用組成物、その製造方法、及び研磨加工方法 |
| US7915071B2 (en) | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
| WO2009042073A2 (en) | 2007-09-21 | 2009-04-02 | Cabot Microelectronics Corporation | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
| KR101232585B1 (ko) | 2007-09-21 | 2013-02-12 | 캐보트 마이크로일렉트로닉스 코포레이션 | 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법 |
| JP5441345B2 (ja) | 2008-03-27 | 2014-03-12 | 富士フイルム株式会社 | 研磨液、及び研磨方法 |
| NZ589349A (en) | 2008-04-18 | 2013-07-26 | Saint Gobain Abrasifs Sa | Hydrophilic and hydrophobic silane surface modification of abrasive grains |
| US8252687B2 (en) | 2008-09-19 | 2012-08-28 | Cabot Microelectronics Corporation | Barrier slurry for low-k dielectrics |
| JP5312887B2 (ja) * | 2008-09-24 | 2013-10-09 | 富士フイルム株式会社 | 研磨液 |
| CN102164853B (zh) | 2008-09-26 | 2014-12-31 | 扶桑化学工业株式会社 | 含有具有弯曲结构和/或分支结构的二氧化硅二次颗粒的胶体二氧化硅及其制造方法 |
| EP2329519B1 (en) | 2008-09-26 | 2013-10-23 | Rhodia Opérations | Abrasive compositions for chemical mechanical polishing and methods for using same |
| JP5843613B2 (ja) | 2009-01-20 | 2016-01-13 | キャボット コーポレイションＣａｂｏｔ Ｃｏｒｐｏｒａｔｉｏｎ | シラン変性金属酸化物を含む組成物 |
| US8119529B2 (en) | 2009-04-29 | 2012-02-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing a substrate |
| CN105070657B (zh) | 2009-08-19 | 2018-03-30 | 日立化成株式会社 | Cmp研磨液及其应用、研磨方法 |
| JP5141792B2 (ja) | 2010-06-29 | 2013-02-13 | 日立化成工業株式会社 | Ｃｍｐ研磨液及び研磨方法 |
| KR101894712B1 (ko) * | 2010-09-08 | 2018-09-04 | 바스프 에스이 | 산화규소 유전체 필름 및 폴리실리콘 및/또는 질화규소 필름을 함유하는 기판의 화학적 기계적 연마 방법 |
| KR101243331B1 (ko) * | 2010-12-17 | 2013-03-13 | 솔브레인 주식회사 | 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법 |
| US8366059B2 (en) | 2011-01-06 | 2013-02-05 | GM Global Technology Operations LLC | Position controlled cable guide clip |
| KR101335946B1 (ko) * | 2011-08-16 | 2013-12-04 | 유비머트리얼즈주식회사 | 텅스텐 연마용 ｃｍｐ 슬러리 조성물 |
| US8518135B1 (en) | 2012-08-27 | 2013-08-27 | Cabot Microelectronics Corporation | Polishing composition containing hybrid abrasive for nickel-phosphorous coated memory disks |
-
2014
- 2014-03-24 US US14/222,736 patent/US9303190B2/en active Active
-
2015
- 2015-03-20 EP EP15767830.1A patent/EP3123498B1/en active Active
- 2015-03-20 KR KR1020167029079A patent/KR102390111B1/ko active Active
- 2015-03-20 WO PCT/US2015/021674 patent/WO2015148295A1/en not_active Ceased
- 2015-03-20 JP JP2016558692A patent/JP6633540B2/ja active Active
- 2015-03-20 CN CN201580027199.XA patent/CN106415796B/zh active Active
- 2015-03-24 TW TW104109483A patent/TWI545184B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2017516296A5 (OSRAM) | ||
| JP2017515302A5 (OSRAM) | ||
| JP2017517900A5 (OSRAM) | ||
| KR102390111B1 (ko) | 혼합 마모제 텅스텐 cmp 조성물 | |
| JP6889156B2 (ja) | カチオン性界面活性剤を含むタングステン処理スラリー | |
| JP6649266B2 (ja) | タングステンｃｍｐのための組成物 | |
| JP2017527674A5 (OSRAM) | ||
| JP2019508525A (ja) | 触媒を含むタングステン処理スラリー | |
| US20150267082A1 (en) | Mixed abrasive tungsten cmp composition | |
| JP2012033478A5 (OSRAM) | ||
| EP3161098A1 (en) | Tungsten chemical-mechanical polishing composition | |
| JP2016196632A5 (OSRAM) | ||
| JP2012517507A5 (OSRAM) | ||
| JP5595414B2 (ja) | 燐酸塩処理前の活性化剤を用いる金属表面の被覆法 | |
| JP2016135784A5 (OSRAM) | ||
| TW201542784A (zh) | 鎢化學機械拋光（ｃｍｐ）之組合物 | |
| JP2009511502A5 (OSRAM) | ||
| JP2016194134A5 (OSRAM) | ||
| JP2013084876A5 (OSRAM) | ||
| Eslamipour et al. | Effects of surface modification and activation of magnetic nanoparticles on the formation of amylase immobilization bonds under different ionic strength conditions | |
| JP2017530115A5 (OSRAM) | ||
| CN105585965B (zh) | 研磨组成物 | |
| CN105467112A (zh) | 一种应用于免疫检测的免疫磁珠及其制备方法 | |
| JP2012524070A5 (OSRAM) | ||
| WO2008035663A1 (en) | Method for production of catalyst and catalyst produced by the method |