JP2014522098A5 - - Google Patents
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- Publication number
- JP2014522098A5 JP2014522098A5 JP2014502748A JP2014502748A JP2014522098A5 JP 2014522098 A5 JP2014522098 A5 JP 2014522098A5 JP 2014502748 A JP2014502748 A JP 2014502748A JP 2014502748 A JP2014502748 A JP 2014502748A JP 2014522098 A5 JP2014522098 A5 JP 2014522098A5
- Authority
- JP
- Japan
- Prior art keywords
- iii nitride
- containing surface
- group iii
- softened
- slurry composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 18
- 150000004767 nitrides Chemical class 0.000 claims 16
- 239000011572 manganese Substances 0.000 claims 12
- 239000002002 slurry Substances 0.000 claims 10
- 238000005498 polishing Methods 0.000 claims 9
- 150000001875 compounds Chemical class 0.000 claims 7
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 6
- 229910052748 manganese Inorganic materials 0.000 claims 6
- 239000011248 coating agent Substances 0.000 claims 5
- 238000000576 coating method Methods 0.000 claims 5
- 239000000126 substance Substances 0.000 claims 4
- 239000002245 particle Substances 0.000 claims 3
- 239000003082 abrasive agent Substances 0.000 claims 2
- 239000006227 byproduct Substances 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 239000007800 oxidant agent Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/073,582 US8828874B2 (en) | 2011-03-28 | 2011-03-28 | Chemical mechanical polishing of group III-nitride surfaces |
| US13/073,582 | 2011-03-28 | ||
| PCT/US2012/030944 WO2012135342A1 (en) | 2011-03-28 | 2012-03-28 | Chemical mechanical polishing of group iii-nitride surfaces |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014522098A JP2014522098A (ja) | 2014-08-28 |
| JP2014522098A5 true JP2014522098A5 (OSRAM) | 2014-12-18 |
| JP6087900B2 JP6087900B2 (ja) | 2017-03-01 |
Family
ID=45953264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014502748A Active JP6087900B2 (ja) | 2011-03-28 | 2012-03-28 | Ｉｉｉ族窒化物表面の化学機械研磨方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8828874B2 (OSRAM) |
| JP (1) | JP6087900B2 (OSRAM) |
| KR (1) | KR101608932B1 (OSRAM) |
| WO (1) | WO2012135342A1 (OSRAM) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2013054883A1 (ja) * | 2011-10-13 | 2015-03-30 | 三井金属鉱業株式会社 | 研摩材スラリー及び研摩方法 |
| SG11201407168PA (en) * | 2012-05-07 | 2014-11-27 | Basf Se | Process for manufacture of semiconductor devices |
| US9259818B2 (en) | 2012-11-06 | 2016-02-16 | Sinmat, Inc. | Smooth diamond surfaces and CMP method for forming |
| US8920667B2 (en) | 2013-01-30 | 2014-12-30 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition containing zirconia and metal oxidizer |
| JP6130316B2 (ja) * | 2014-03-11 | 2017-05-17 | 信越化学工業株式会社 | 研磨組成物及び研磨方法並びに研磨組成物の製造方法 |
| US9567492B2 (en) * | 2014-08-28 | 2017-02-14 | Sinmat, Inc. | Polishing of hard substrates with soft-core composite particles |
| SG11201705419RA (en) * | 2015-01-12 | 2017-07-28 | Versum Mat Us Llc | Composite abrasive particles for chemical mechanical planarization composition and method of use thereof |
| EP3516002B1 (en) | 2016-09-23 | 2022-01-05 | Saint-Gobain Ceramics & Plastics, Inc. | Chemical mechanical planarization slurry and method for forming same |
| US11078380B2 (en) | 2017-07-10 | 2021-08-03 | Entegris, Inc. | Hard abrasive particle-free polishing of hard materials |
| JP6780800B1 (ja) * | 2020-04-09 | 2020-11-04 | 信越半導体株式会社 | ウェーハの研磨方法及び研磨装置 |
| JP7165858B2 (ja) | 2020-06-30 | 2022-11-07 | 日亜化学工業株式会社 | 発光素子の製造方法 |
| US20220306902A1 (en) * | 2021-03-29 | 2022-09-29 | Entegris, Inc. | Suspension for chemical mechanical planarization (cmp) and method employing the same |
| US20220332977A1 (en) * | 2021-04-16 | 2022-10-20 | Entegris, Inc. | Cmp compositions for polishing dielectric materials |
| TWI873902B (zh) * | 2022-10-11 | 2025-02-21 | 美商Ｃｍｃ材料有限責任公司 | 用於高度摻雜硼之矽膜之化學機械拋光組合物 |
| CN119371896B (zh) * | 2024-10-21 | 2025-06-27 | 镇江瑞斯普新材料科技有限公司 | 一种耐磨型复合抛光粉及其制备方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000080352A (ja) | 1998-06-11 | 2000-03-21 | Allied Signal Inc | 低誘電率材料用研磨用スラリ―としての水系金属酸化物ゾル |
| JP4028163B2 (ja) | 1999-11-16 | 2007-12-26 | 株式会社デンソー | メカノケミカル研磨方法及びメカノケミカル研磨装置 |
| JP4345746B2 (ja) * | 1999-11-16 | 2009-10-14 | 株式会社デンソー | メカノケミカル研磨装置 |
| US6866793B2 (en) | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
| US7221037B2 (en) | 2003-01-20 | 2007-05-22 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride substrate and semiconductor device |
| US7176115B2 (en) | 2003-03-20 | 2007-02-13 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing Group III nitride substrate and semiconductor device |
| JP2006100570A (ja) * | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 研磨用組成物及びそれを用いた研磨方法 |
| JP4792802B2 (ja) * | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Ｉｉｉ族窒化物結晶の表面処理方法 |
| JP5336699B2 (ja) | 2006-09-15 | 2013-11-06 | 株式会社ノリタケカンパニーリミテド | 結晶材料の研磨加工方法 |
| US8283694B2 (en) * | 2006-10-19 | 2012-10-09 | Sumitomo Electric Industries, Ltd. | GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device |
| EP2039474A1 (en) * | 2007-02-20 | 2009-03-25 | Sumitomo Electric Industries, Ltd. | Polishing slurry, method for manufacturing the polishing slurry, nitride crystalline material and method for polishing surface of the nitride crystalline material |
| JP5346940B2 (ja) * | 2007-10-05 | 2013-11-20 | サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド | 改善された炭化ケイ素粒子、ならびにその製造方法および使用方法 |
| DE102007047737A1 (de) * | 2007-10-05 | 2009-04-30 | Merck Patent Gmbh | Piperidin- und Piperazinderivate |
| JP2009272380A (ja) | 2008-05-01 | 2009-11-19 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶およびその表面処理方法、ｉｉｉ族窒化物積層体およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスおよびその製造方法 |
| JP4333820B1 (ja) * | 2009-01-19 | 2009-09-16 | 住友電気工業株式会社 | 化合物半導体基板 |
| US9368367B2 (en) | 2009-04-13 | 2016-06-14 | Sinmat, Inc. | Chemical mechanical polishing of silicon carbide comprising surfaces |
-
2011
- 2011-03-28 US US13/073,582 patent/US8828874B2/en active Active
-
2012
- 2012-03-28 WO PCT/US2012/030944 patent/WO2012135342A1/en not_active Ceased
- 2012-03-28 JP JP2014502748A patent/JP6087900B2/ja active Active
- 2012-03-28 KR KR1020137028408A patent/KR101608932B1/ko active Active
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