JP2017513236A - Lao基板に基づく非極性青色ledエピタキシャルウェハ及びその製造方法 - Google Patents
Lao基板に基づく非極性青色ledエピタキシャルウェハ及びその製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 112
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 7
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000001194 electroluminescence spectrum Methods 0.000 description 3
- 238000000103 photoluminescence spectrum Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000005701 quantum confined stark effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- KJXBRHIPHIVJCS-UHFFFAOYSA-N oxo(oxoalumanyloxy)lanthanum Chemical compound O=[Al]O[La]=O KJXBRHIPHIVJCS-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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Abstract
Description
上記LAO基板に基づく非極性青色LEDエピタキシャルウェハの製造方法であって、前記ステップc)では非極性InGaN/GaN量子井戸の形成過程は、
LAO基板の温度を750〜950℃に制御し、H2を閉じ、TEGaとアンモニアを注入し、反応室の圧力を200torrに、V/III比を986に、厚みを10〜15nmに制御するバリア層形成ステップと、
LAO基板の温度を750〜950℃に制御し、H2を閉じ、TEGa、TMIn及びアンモニアを注入し、反応室の圧力を200torrに、V/III比を1439に、厚みを2〜4nmに制御する井戸層形成ステップと、を含む。
LAO基板を用い、結晶配向を選択し、且つLAO基板に対して表面洗浄処理を行うステップS1と、
LAO基板に対してアニール処理を行い、且つLAO基板の表面にAlN種結晶層を形成するステップS2と、
LAO基板上に有機金属化学気相成長で順に非極性m面GaNバッファ層、非極性ノンドープu−GaN層、非極性n型ドープGaN薄膜、非極性InGaN/GaN量子井戸、非極性m面AlGaN電子バリア層及び非極性p型ドープGaN薄膜を形成するステップS3と、を含む。
(1)LAO基板を用い、結晶配向を選択し、
(2)基板に対して表面洗浄処理を行い、
(3)基板に対してアニール処理を行い、基板を900−1200℃で1〜4h高温ベーキングして室温に空冷し、次にN2プラズマを注入して30〜80分間保温し、基板の表面にAlN種結晶層を形成し、GaN薄膜の成長にテンプレートを提供し、Nプラズマの流量が40〜90sccm、プラズマ窒素を発生させる高周波電力が200〜500Wであり、
(4)高周波プラズマ(RF)強化有機金属化学気相成長(MOCVD)で非極性m面GaNバッファ層を生長させ、プロセス条件は、基板の温度を400〜800℃に下げ、TMGaとNプラズマを注入し、反応室の圧力が400〜700torr、Nプラズマの流量が40〜90sccm、プラズマ窒素を発生させる高周波電力が200〜700W、V/III比が800〜1200であることであり、
(5)MOCVDプロセスで非極性ノンドープu−GaN層を成長させ、プロセス条件は、基板の温度が1000〜1500℃で、TMGaを注入し、反応室の圧力が400torr、V/III比が180であることであり、
(6)MOCVDプロセスで非極性n型ドープGaN薄膜を成長させ、プロセス条件は、基板の温度が1000〜1300℃で、TMGaとSiH4を注入し、SiH4の流量を60〜100sccmに、反応室の圧力を240torrに、V/III比を160に、ドープ電子濃度を1.0×1017〜5.3×1019cm−3に維持することであり、
(7)MOCVDプロセスで非極性InGaN/GaN量子井戸を成長させ、プロセス条件は、バリア層を形成するステップでは、基板の温度が750〜950℃であり、H2を閉じ、TEGaとアンモニアを注入し、反応室の圧力が200torr、V/III比が986、厚みが10〜15nmであり、井戸層を形成するステップでは、基板の温度が750〜950℃であり、H2を閉じ、TEGa、TMIn及びアンモニアを注入し、反応室の圧力が200torr、V/III比が1439、厚みが2〜4nmであることであり、
(8)MOCVDプロセスで非極性m面AlGaN電子バリア層を成長させ、プロセス条件は、基板の温度を900〜1050℃に上げ、TMGaとアンモニアを注入し、反応室の圧力が200torr、V/III比が986であることであり、
(9)MOCVDプロセスで非極性p型ドープGaN薄膜を成長させ、プロセス条件は、基板の温度が900〜1100℃であり、TMGa、CP2Mg及びアンモニアを注入し、CP2Mgの流量を250〜450sccmに、反応室の圧力を200torrに、V/III比を1000〜1250に、ドープ正孔濃度を1.0×1016−2.2×1018cm−3に維持することである。
Claims (10)
- 基板を備えるLAO基板に基づく非極性青色LEDエピタキシャルウェハであって、
前記基板は、バッファ層、第一ノンドープ層、第一ドープ層、量子井戸層、電子バリア層及び第二ドープ層が順に設置されるLAO基板であることを特徴とするLAO基板に基づく非極性青色LEDエピタキシャルウェハ。 - 前記バッファ層が非極性m面GaNバッファ層、前記第一ノンドープ層が非極性ノンドープu−GaN層、前記第一ドープ層が非極性n型ドープGaN薄膜、前記量子井戸層が非極性InGaN/GaN量子井戸層、前記電子バリア層が非極性m面AlGaN電子バリア層、前記第二ドープ層が非極性p型ドープGaN薄膜であることを特徴とする請求項1に記載のLAO基板に基づく非極性青色LEDエピタキシャルウェハ。
- a)LAO基板を用い、結晶配向を選択し、且つLAO基板に対して表面洗浄処理を行うステップと、
b)LAO基板に対してアニール処理を行い、且つLAO基板の表面にAlN種結晶層を形成するステップと、
c)LAO基板上に有機金属化学気相成長で非極性m面GaNバッファ層、非極性ノンドープu−GaN層、非極性n型ドープGaN薄膜、非極性InGaN/GaN量子井戸、非極性m面AlGaN電子バリア層及び非極性p型ドープGaN薄膜を順に形成するステップと、を含むことを特徴とする請求項2に記載のLAO基板に基づく非極性青色LEDエピタキシャルウェハの製造方法。 - 前記ステップb)では、LAO基板を900〜1200℃で1〜4時間高温ベーキングして室温に空冷し、次にN2プラズマを注入して30〜80分間保温し、LAO基板の表面に高周波プラズマ強化有機金属化学気相成長でAlN種結晶層を形成し、Nプラズマの流量が40〜90sccm、プラズマ窒素を発生させる高周波電力が200〜500Wであることを特徴とする請求項3に記載のLAO基板に基づく非極性青色LEDエピタキシャルウェハの製造方法。
- 前記ステップc)では非極性m面GaNバッファ層の形成過程は、LAO基板の温度を400〜800℃に下げ、TMGaとNプラズマを注入し、反応室の圧力を400〜700torrに、Nプラズマの流量を40〜90sccmに、プラズマ窒素を発生させる高周波電力を200〜700Wに、V/III比を800〜1200に制御することであることを特徴とする請求項3に記載のLAO基板に基づく非極性青色LEDエピタキシャルウェハの製造方法。
- 前記ステップc)では非極性ノンドープu−GaN層の形成過程は、LAO基板の温度を1000〜1500℃に制御し、TMGaを注入し、反応室の圧力を400torrに、V/III比を180に制御することであることを特徴とする請求項3に記載のLAO基板に基づく非極性青色LEDエピタキシャルウェハの製造方法。
- 前記ステップc)では非極性n型ドープGaN薄膜の形成過程は、LAO基板の温度を1000〜1300℃に制御し、TMGaとSiH4を注入し、SiH4の流量を60〜100sccmに維持し、反応室の圧力を240torrに、V/III比を160に、ドープ電子濃度を1.0×1017〜5.3×1019cm−3に制御することであることを特徴とする請求項3に記載のLAO基板に基づく非極性青色LEDエピタキシャルウェハの製造方法。
- 前記ステップc)では非極性InGaN/GaN量子井戸の形成過程は、
LAO基板の温度を750〜950℃に制御し、H2を閉じ、TEGaとアンモニアを注入し、反応室の圧力を200torrに、V/III比を986に、厚みを10〜15nmに制御するバリア層形成ステップと、
LAO基板の温度を750〜950℃に制御し、H2を閉じ、TEGa、TMIn及びアンモニアを注入し、反応室の圧力を200torrに、V/III比を1439に、厚みを2〜4nmに制御する井戸層形成ステップと、を含むことを特徴とする請求項3に記載のLAO基板に基づく非極性青色LEDエピタキシャルウェハの製造方法。 - 前記ステップc)では非極性m面AlGaN電子バリア層の形成過程は、LAO基板の温度を900〜1050℃に上げ、TMGaとアンモニアを注入し、反応室の圧力を200torrに、V/III比を986に制御することであることを特徴とする請求項3に記載のLAO基板に基づく非極性青色LEDエピタキシャルウェハの製造方法。
- 前記ステップc)では非極性p型ドープGaN薄膜の形成過程は、LAO基板の温度を900〜1100℃に制御し、TMGa、CP2Mg及びアンモニアを注入し、CP2Mgの流量を250〜450sccmに維持し、反応室の圧力を200torrに、V/III比を1000〜1250に、ドープ正孔濃度を1.0×1016〜2.2×1018cm−3に制御することであることを特徴とする請求項3に記載のLAO基板に基づく非極性青色LEDエピタキシャルウェハの製造方法。
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