M314427 八 新型說明： 【新型所屬之技術領域】 本技術是屬於發光二極體領域，_過電壓敏感元件如# 型氧化鋅纽敝H錢高分子靜電倾元絲提雜光^ 擾0 或紫光等二減的靜電防護能力，使上述這些.元件不受靜電的干 • 【先前技術】 發^二_具有體積小，壽命長、耗電量低及單色發光等優 點。目雨已廣泛應用於顯示器、儀表指示、紅紐、大型戶外^ 板、汽車照明、手機、⑽等用途。近來特別是能源價格飛張， 相關的研究均顯示LED可能是未來極重要的一種照明光源。 . —j於目刖爷用的監光、綠光、自光及紫光二極體是利用在藍 • Λ石等心彖基材上成長—層半導體化的氮化鎵發光層，再經封 等製程職.作喊。其典型騎裝方式如圖」所示。 、 • 由於製作發光二極體的基材―藍寶石是一種絕緣材料，加上 發^層材料是—種半導體材料。因此發光二極體的製作過程及其 彳用過* ’兀件對靜電相當敏感，猶不留意即會造成元件 . 永久W。之別的數據顯示，藍光、綠光二極體㈣靜電能力相 田差&對人體域的靜電約只可承受⑽〜謙的過電壓而 已α此’傳統為解決有關靜糊題，操作人員需佩帶靜電環， 以防靜電損壞相關零件。 為解决*光—極體如上所述的靜制題，铸關專利第 M314427 136175、261831號及中國專利第漏88號均提到以齊納二極體 (Zenner diode)來提咼元件的靜電問題，但是因為齊納二極體有 方向性且讀較大，故實_料，在做晶粒触使用 分辯方向的設備，且要將齊納二極體_起封裝在小二 困難度’故實際使用相對較少。美國專利第6593597號專利提出 利用發光二極體喊晶製程直接將二極體製作紅晶片上，再叙 後_晶片製程完朗時具有發光二極體及二極體於同一晶片 上，如此，雖可解決封裝過程的方向性問題，但因為晶體尺寸小， 要=兩種不同的產品直難作在同—晶壯，雖然理論上可行， 但貫際製作時，蟲晶製程及後續的晶片製程的對位問題，有極高 IU此’從理論上’此—種結構應該可以被製造出來， 但疋貝際製作相當不容易達成。 力和以氧鱗X波吸收||具有優異的靜電吸收能力且元件 /又有方向性’加上目前商品化的最小尺寸已達·_規格，是一 種相當良好的靜電賴裝置，目前已敍賴於手機、數位相 機、PM、筆記型電腦等產品的靜電防_途。另外，高分子靜 電材料使用高分子材料包覆A1、Ag、Ni等導體或是z f 元制樣沒有方触财相當«的靜電吸收能 力，可以承受超過8KV以上的靜電電壓。 本發明以上述所述的靜電保護元件和藍光、綠光、白光及紫 光物賴_她綱分刑保護 電吸收能力來吸收靜電，以保護藍光、綠光、白 = 1^ ，使整個發光二極體具有優異的靜電防護能力， 可達以上的靜電吸收能力。因為積層型氧化鋅突波吸收器和 M314427 裝時，可件本身不具方向性，故在做發光二極體元件封 元、件的方^财顧層飾赠波吸收11和高分子靜電保護 插t的方向_題，故可加快元件驗裝速率。此外，由於這兩 出str化大量生產的產品，元件價格便宜，故對整體組裝 ®木的务光二極體元件價格相對影響不大。 【新型内容】 本實·㈣主翻容是在晶片顏是-般插入型（Dip I先—極體中置人積層魏化鋅突波吸收11或是高分子 靜電保護元件，和以絕緣材料如轉石、氧鱗、氮化録、紹酸 鑭為基材的藍光、綠光、紫光晶粒直接以並财式連接在一起， 利用日0片型突波吸㈣或是高分子赠電髓料元件的電阻 率對靜電相當敏感的雜，將靜電直接導到接地迴路中。如此， 可大幅提高藍光、、縣、紫光及自解發光二極_靜電防護能 力，由-般未安裝晶片型突波吸”或是高分子型靜電保護器前 的100.V的靜電防護能力，提升到8KV以上的靜電防護能力。 又晶片型突波吸收@或是高分子型靜電保龍本身沒有方向 性，因此元件在組裝時，不用考慮方向性，可以大幅減低元件二 身裝設備成本，另外由於元件價格便宜，故加裝晶片型突波吸收 器或是〶分子型靜電賴n對整個發光二極體的製造成本影響 不大。 · 圖2為發光二極體以並聯方式連接晶片型突波吸收器或是 高分子型靜祕減、的概略示意圖，其中3Q為發光二極體，20 為晶片纽吸收贼是高分子靜魏護科防靜電元件。圖中顯 M314427 二曰曰片型大波吸收n或是高分子型靜電健有雙向特 性。當正常電壓加在發光二極體之由s片^白特 收器或是高分子型靜電例哭V '聽阳片型大波吸 發先__ i、$⑽缺在㈣輒態，故電流主要流經 發光二極體，但是當有高的靜電電壓 〜ϋ極體之上時，由於晶片型突波吸收器或是高分子型 月’ ％保護器是在低電阻妝能， + 收器或是高分子型靜電平^，$流主要流經晶片型突波吸 保"又态’故可保諼發光二極體。此外，去 遂^ j V2不疋很大時’由於發光二極體及靜電保護零件的電阻 =相當大，故流經二極__流相當小，但當反電 :静電導人）相當高時，W波吸㈣或是高分子;靜2 =寺ΓΓ兀件的電阻值是在低阻狀態，電流主要流經靜電 你口隻兀件。如此，加梦曰μ丨咖 哭箄筹+ ^波吸收11或是高分子型靜電保護 口4錢保達疋件可達到雙向保護的功能。M314427 Eight new description: [New technology field] This technology belongs to the field of light-emitting diodes, _ over-voltage sensitive components such as #型锌锌纽敝H money polymer electrostatic tilting wire wire stray light ^ disturbance 0 or purple light The electrostatic protection ability of the second reduction makes these components free from static electricity. [Prior Art] The hair has two advantages: small size, long life, low power consumption, and monochromatic illumination. The rain has been widely used in displays, instrumentation, red, large outdoor panels, automotive lighting, mobile phones, (10) and other purposes. Recently, especially the energy price has spread, related research shows that LED may be an important illumination source in the future. -j, the illuminating, green, self-lighting and violet diodes used by 刖 刖 是 是 是 是 是 是 是 是 是 是 是 是 是 是 是 是 是 是 监 监 监 监 监 监 监 监 监 监 监 监 监 监 监 监 监Waiting for the system. Shout. Its typical riding style is shown in the figure. • Because of the substrate on which the light-emitting diode is fabricated – sapphire is an insulating material, and the layered material is a semiconductor material. Therefore, the manufacturing process of the light-emitting diode and its use of the *'s are very sensitive to static electricity, and the components are not noticed. Permanent W. Other data show that the blue and green diodes (4) electrostatic capacity phase difference & the static electricity on the human body can only withstand (10) ~ modest overvoltage. This is the traditional to solve the problem of static paste, the operator needs to wear Electrostatic ring to prevent damage to related parts. In order to solve the static problem of the above-mentioned light-polar body, the castings of the patents Nos. M314427 136175, 261831 and the Chinese patent No. 88 all mention the use of Zener diodes to improve the static electricity of the components. The problem, but because the Zener diode has directionality and read a large amount, it is actually a device that uses the direction of the grain touch, and the Zener diode is packaged in the small two difficulty degree. Actual use is relatively small. U.S. Patent No. 6,593,597 proposes to use a light-emitting diode shim-crystal process to directly form a diode on a red wafer, and then to have a light-emitting diode and a diode on the same wafer when the wafer process is completed. Although it can solve the directional problem of the packaging process, because the crystal size is small, it is difficult to make two different products in the same - crystal strong, although theoretically feasible, but in the continuous production, the insect crystal process and subsequent wafers The problem of the alignment of the process, there is a very high IU this 'in theory' this kind of structure should be able to be manufactured, but the production of 疋 相当 is quite difficult to achieve. Force and oxygen wave X-wave absorption||Excellent electrostatic absorption capacity and component/directionality' plus the current commercial minimum size has reached _ specification, is a fairly good electrostatic device, it has been described Reliance on mobile phones, digital cameras, PM, notebook computers and other products. In addition, the polymer static material is coated with a polymer material such as A1, Ag, Ni or the like, or the z f element is not electrostatically absorbed, and can withstand an electrostatic voltage of more than 8 kV. The invention adopts the above-mentioned electrostatic protection element and blue light, green light, white light and purple light material Lai _ she class to protect the electric absorption capacity to absorb static electricity, to protect blue light, green light, white = 1 ^, so that the whole light two The polar body has excellent electrostatic protection capability and can reach the above electrostatic absorption capacity. Because the laminated zinc oxide surge absorber and the M314427 are installed, the component itself is not directional, so in the case of the light-emitting diode component sealing element, the component is decorated with a wave absorption 11 and a polymer electrostatic protection plug. The direction of t is _, so it can speed up the component assembly rate. In addition, due to the fact that these two products are mass-produced and the components are inexpensive, the price of the light-emitting diode components of the overall assembly ® wood has little influence. [New content] The real (4) main reversal is in the wafer is a general insertion type (Dip I first-polar body in the human layer of Wei-Zinc surge absorption 11 or polymer electrostatic protection components, and insulation materials For example, the blue, green, and violet crystal grains of the substrate, such as turning stone, oxygen scale, nitrided, and bismuth sulphate, are directly connected together by the same type, using the 0-type spur wave (4) or the polymer gift. The resistivity of the medullary component is sensitive to static electricity, and the static electricity is directly led to the grounding loop. Thus, the blue light, the county, the violet light, and the self-extracting light-emitting diode can be greatly improved, and the chip is not mounted. The type of surge absorption or the electrostatic protection capability of 100.V before the polymer type electrostatic protector improves the electrostatic protection ability above 8KV. The wafer type surge absorption @ or the polymer type electrostatic dragon itself has no direction. Sex, therefore, the components are assembled without regard to the directionality, which can greatly reduce the cost of the two-component equipment. In addition, because the components are cheap, a wafer-type surge absorber or a 〒-type electrostatic ray is applied to the entire illuminator. Polar body manufacturing The effect is not significant. · Figure 2 is a schematic diagram of a light-emitting diode connected in parallel to a wafer-type surge absorber or a polymer type static reduction. 3Q is a light-emitting diode, and 20 is a wafer-new absorption thief. It is a polymer static Wei protection anti-static component. In the figure, M314427 two-chip type large wave absorption n or polymer type static electricity has two-way characteristics. When the normal voltage is added to the light-emitting diode, the s piece ^ white special Receiver or polymer type static example crying V 'listening to the sun type big wave absorption first __ i, $ (10) is missing in (four) 辄 state, so the current mainly flows through the light-emitting diode, but when there is a high electrostatic voltage ~ On the top of the flip-flop, the wafer type surge absorber or the polymer type '% protector is in low-resistance makeup, + sink or polymer type static electricity, and the flow mainly flows through the wafer type. The spurt absorbing "also state's can protect the luminescent diode. In addition, when 遂^ j V2 is not too big, the resistance of the light-emitting diode and the electrostatic protection part is quite large, so it flows through two. The pole __flow is quite small, but when the anti-electricity: electrostatic conduction is quite high, W wave (four) or polymer; static 2 = The resistance value of the temple element is in the low-resistance state, and the current mainly flows through the static electricity. Your mouth is only a piece of cake. So, add a dream, 丨 丨 丨 丨 + ^ + ^ wave absorption 11 or polymer type electrostatic protection mouth 4 Qian Baoda components can achieve the function of two-way protection.
各，斤提的U—極體材料可以是以絕緣材料如藍寶石、氧 ^、氮化鎵、銘酸鑭為基材的藍光、綠光、紫光晶粒，或是以 ^或紫光晶粒f發光源的白光、粉色祕光二極體。又元件的 衣方式可以是-般燈泡魏卿加心歧表面黏著型⑽D 壯ype) ’而表面黏著型又可分為覆晶封細⑽㈤或是平行封 叙〇 【實施方式】 ^本新』、纟肩錄造方法是彻積層型A化鋅突波吸收器或 ^刀子好電保墁兀件的高靜電吸收能力來提高發光二極體的 评電吸收能力，料獨使用藍、綠、紫光為基材的發光二極體的 M314427 靜電能力由ιοον附近，提升至rn以上。其具體做法是將積層 ^化鋅魏吸收n或是高分子靜電顧元件，㈣絕緣材料二 孤貝石、氧化鋅、氣化叙、銘酸鑭為基材的藍光、綠光、紫光晶 粒直接以並聯方式連接在-起ϋ封裝成單―晶片型或是燈 ，型發光二極體。由於本新型結構使用的積層魏化鋅突波吸收 器或是高分子靜護元件具有雙向紐且產品偷便宜，因 此，兀件的組裝過程相對可使用較便宜的設備，且加裝這些靜電 保護元件對發光二極體最後的成本影響不大，是一項值得製作2 封I結構。 〈貫施例一 > ^ q〜丨以貝/曰上孔化鮮矢波吸收器或是高分子靜缔 護元件朗在燈泡型發光二極體賴裝上。選U型 ^鋅突波舰H和波長47Gnm的藍光發光二極體晶粒一 =作靜電保護型發光體過程，如圖3所示。複數對的導線竿.] 短冊狀的導線連接端6。於導線架2的上端受部7，可 將称發卜極體的晶粒。接著’利雜加°_呢(接合導! :备光一極體晶粒接續到另_邊的導缘架〗，生大、、、’ 間，穿嗖靜帝佴嗜日y j ' 亚在檢跨導線架1 :後，將導線連接端6插入溶解有 ___ 8裡。翻化後，從模具崎，^ i 封裝好的發光二極體進行分割，即製成具靜電防ί 七、m極體。這個元件經靜電測試，可_ 8又; > <貫施例 圖 4為本創新發_另—結姻。職利用靜 電保護零件和 M314427 發光二極體並聯來提高發光二極體的靜電防護能力。我們選擇以 ，波長470面的藍光發光二極體晶粒及_規格的晶片型突波吸 收器，將兩者以覆晶封裝的方式組裝在-起，如圖4所示。藍光 發先—極體4〇具有透明基材32、n植入氮化嫁層Μ、發光層. P植入氮化鎵層36及-對導電電極施和_，另外，5{)^娜 =為焊接材料。而⑼突波吸收器2g、具相魏結體烈及一 46a ^ 46b，, 4〇 40 ^2〇之上，利用坪接材料5〇a及5〇b，將發光二極體 b Γ %織和晶繼繼％ _電極拖及 切^ 再將上賴合物安裝在導'_後，再經灌膠、 =過^崩膽型發光二極體。接著，測試這個發光二極體 電能力，結果顯示元件具有_以上的靜電防護能力。 、只她例三〉 是本新型的另—結構示意圖爾是利用防靜電元件來 灰1先二極體的防靜電能力。我們選擇波長525咖的綠光發光 :極^姉_祕締子魏倾元細鋪起 二粒封裝在—起’利用高分子靜綱 才几皆笔月匕力來提升铮朵|伞—枕舰。 化鎵層104、發光層108、 〇n入^110、p植入氮 而曰M h / 何聊及—對導電電極116和118。 210曰曰及Ξ靜電賴元件細具有絕緣材娜及—對端電極. :將綠光發光二極體晶粒⑽ 和*八子^於基材1〇0之上’再將發光二極體上的導電電極118 回刀子料防護元件·的端電極22〇連接在一起，接著在將 -10 M314427 發光二極體]3〇上的導電電極夺丄 另-端電極戰接在，。再經㈣^ 靜電防護能力的SMD型綠光發光-朽w 口丨寺過私，製成具有 果，顯示元件具有高的靜電靜電測試結 電壓。^ ^ ^ ^ ^ ^ M承文驗以上的靜電 綜合以上的實繼果，將防靜電元^^ 用防靜電元件的高抗靜電能力，可以提^ 極體並聯’利 力至8KV以上。又這此防靜*件〜光—極體的抗靜電能 可以是高分子靜魏護元件，而發光二極_ f —，也 材料如藍寶石、氧化鋅、氣兹 分…#分可以是以絕緣 紫光晶粒，編撕 輕方式包括發光二彳可以是膽型。而遍 和發光二極體與靜電保 :圖式簡單說明】 圖1 :典型發光二極體結構。 圖2 圖3 圖4 發光二極體和靜電保護元件並聯示意圖。 燈泡型封裝發光二極體與靜電保護元件之流程結構圖 以覆晶封裝發光二極體與靜電保護元件結構圖。 圖5 :並財式職魏二極雜靜電保護元件結構圖。 M314427 【主要元件符號說明】 1，2 :銅腳 3 :發光二極體 4:晶片突波吸收器 5 :封裝樹脂 20 ： 晶片突波吸收器 25 : 陶瓷燒結體 30 : 發光二極體 32 ： 透明基材 34 : 氮化鎵層 35 : 發光層 36 : 氮化鎵層 38a和38b ·導電電極 40:藍光發光二極體 46a及46b :端電極 50a及50b :焊接材料 130 :綠光發光二極體 116和118 :導電電極 200 :高分子靜電保護元件 210和220:端電極Each of the U-pole materials can be made of insulating materials such as sapphire, oxygen, gallium nitride, strontium silicate, blue, green, and violet crystal grains, or ^ or violet crystal grains. The white light and pink secret light diode of the light source. The component's clothing method can be - the general bulb Wei Qing plus heart surface adhesion type (10) D strong ype) 'and the surface adhesion type can be divided into the crystal sealing seal (10) (five) or parallel seal 〇 [implementation] ^本新』 The method of recording shoulders and shoulders is to improve the electric absorption capacity of the light-emitting diode by the high electrostatic absorption capacity of the laminated A-type zinc surge absorber or the ^ knife-good electrical protection device, and the material is blue, green and The electrostatic conductivity of M314427 of the light-emitting diode of violet light is raised from near ιοον to above rn. The specific method is to laminate the zinc-wet-absorbing n or the polymer electrostatic element, and (4) the blue, green and violet crystal grains of the insulating material: two lamellar, zinc oxide, gasification, and acid strontium. Directly connected in parallel to form a single-wafer type or a light-emitting diode. Since the laminated Wei-Zinc surge absorber or the polymer static component used in the novel structure has a two-way button and the product is cheap, the assembly process of the component can be relatively inexpensive, and the electrostatic protection is added. The component has little effect on the final cost of the LED, and it is worthwhile to make 2 I structures. <Example 1> gt~ 丨 丨 曰 曰 曰 曰 鲜 鲜 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 或是 灯泡 灯泡 灯泡 灯泡 灯泡 灯泡U-type zinc bumper ship H and blue light-emitting diode grain of wavelength 47Gnm are selected as the process of electrostatic protection type illuminator, as shown in Fig. 3. The pair of wires 竿.] The short wire-like wire connection end 6. At the upper end receiving portion 7 of the lead frame 2, the crystal grains of the polar body can be called. Then 'Licha plus °_? (Joining guide!: Preparing the light of a polar body die to the other side of the guide frame), Shengda,,, 'between, wearing the 嗖 嗖 佴 佴 佴 y yj ' sub-inspection After the cross-conductor 1 :, the wire connection end 6 is inserted into the dissolved ___ 8 . After the tumbling, the packaged light-emitting diodes are separated from the mold, and the electrostatically-preventive light-emitting diode is divided into two pieces. This element is electrostatically tested and can be _ 8 again; ><<<<<> Example 4 is an innovative hair _ another-marriage. The use of electrostatic protection parts and M314427 light-emitting diodes in parallel to improve the light-emitting diode The electrostatic protection capability of the body. We chose to use a blue light emitting diode die with a wavelength of 470 and a wafer type surge absorber of _ specification to assemble the two in a flip chip package, as shown in Figure 4. The blue light first-polar body has a transparent substrate 32, n implants a nitrided layer, a light-emitting layer, P implants a gallium nitride layer 36, and - applies a conductive electrode to the _, in addition, 5{) ^Na = for welding materials. And (9) the oscillating absorber 2g, with a phase of the body and a 46a ^ 46b, 4 〇 40 ^ 2 〇 above, using the splicing materials 5 〇 a and 5 〇 b, the light-emitting diode b Γ % Weaving and crystal continue to % _ electrode drag and cut ^ and then the upper lysate is installed in the guide '_, and then through the glue, = over the collapse of the bile type light-emitting diode. Next, the electric capacity of the light-emitting diode was tested, and as a result, it was revealed that the element had an electrostatic protection ability of _ or more. Only her case 3 is the other structure of the new structure is the use of anti-static components to the anti-static ability of the ash 1 first diode. We choose the green light of the wavelength 525 coffee: the extreme ^ 姊 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ . The gallium layer 104, the luminescent layer 108, the 入n into the ^110, the p implanted with nitrogen and the 曰Mh/h chat and the conductive electrodes 116 and 118. 210曰曰 and ΞElectrostatic elements are thin with insulating material Na and – opposite electrode.: The green light emitting diode (10) and *8 are on the substrate 1〇0 and then the LED is placed on the LED. The conductive electrode 118 is connected to the end electrode 22 of the backing material protection element, and then the conductive electrode on the -10 M314427 light-emitting diode] 3 is used to engage the other end electrode. After the (4)^ electrostatic protection ability of the SMD-type green light---------------------------------------------------------------------------------------------------------------------------------------------- ^ ^ ^ ^ ^ ^ M Into the above static electricity Synthetic above and above, the anti-static element ^ ^ with anti-static elements of high anti-static ability, can be connected to the body of the parallel 'strength to 8KV or more. And this anti-static * piece of light - polar body anti-static energy can be a polymer static Wei protection element, and the light-emitting diode _ f -, also materials such as sapphire, zinc oxide, gas ... ... points can be Insulating violet crystal grains, the light-cutting method including the light-emitting dice may be a bile type. And the light and the diode and the electrostatic protection: a simple description of the figure] Figure 1: Typical light-emitting diode structure. Figure 2 Figure 3 Figure 4 is a schematic diagram of the parallel connection of the LED and the ESD protection component. Flow chart of the bulb-type package LED and electrostatic protection component The structure diagram of the flip-chip package LED and the ESD protection component. Figure 5: Structure diagram of Wei Erji's electrostatic protection component. M314427 [Description of main component symbols] 1, 2: Copper pin 3: Light-emitting diode 4: Wafer surge absorber 5: Package resin 20: Wafer surge absorber 25: Ceramic sintered body 30: Light-emitting diode 32: Transparent substrate 34: Gallium nitride layer 35: Light-emitting layer 36: Gallium nitride layers 38a and 38b Conductive electrode 40: Blue light-emitting diodes 46a and 46b: Terminal electrodes 50a and 50b: Soldering material 130: Green light emitting light Polar bodies 116 and 118: conductive electrode 200: polymer electrostatic protection elements 210 and 220: terminal electrodes