CN207009456U - A kind of novel photovoltaic thermo-electric generation integrated chip - Google Patents
A kind of novel photovoltaic thermo-electric generation integrated chip Download PDFInfo
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- CN207009456U CN207009456U CN201720505771.5U CN201720505771U CN207009456U CN 207009456 U CN207009456 U CN 207009456U CN 201720505771 U CN201720505771 U CN 201720505771U CN 207009456 U CN207009456 U CN 207009456U
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- thermoelectricity
- photovoltaic
- photovoltaic material
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- electric generation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model provides a kind of novel photovoltaic thermo-electric generation integrated chip, including：It is provided with insulation and thermal insulation substrate/film of through hole；The basic unit's thermoelectricity photovoltaic material being connected on the through hole inner edge and substrate/film surface with the part of through hole inner edge；Successively it is superimposed on the N layer thermoelectricity photovoltaic materials that basic unit's thermoelectricity photovoltaic material is located on substrate/film surface part；Wherein, two layers adjacent of thermoelectricity photovoltaic material is p-type or N-type semiconductor with the opposite Seebeck coefficient of the close symbol of numerical value, and PN junction is formed in intersection, form a pair of thermocouples pair positioned at two groups of materials that different through holes and basic unit's thermoelectricity photovoltaic material are respectively p-type or N-type semiconductor；Transparency electrode, connect the top layer thermoelectricity photovoltaic material of at least one pair of thermocouple pair；Output electrode, basic unit's thermoelectricity photovoltaic material of the thermocouple pair connected by the transparency electrode is connected, form galvanic circle.
Description
Technical field
The utility model is related to field of semiconductor devices, and in particular to a kind of novel photovoltaic thermo-electric generation integrated chip and
Its manufacture method.
Background technology
Semiconductor chilling plate, thermoelectric module is also, is a kind of heat pump.Its advantages of is no slide unit, is applied
Some spaces are restricted, and reliability requirement is high, the occasion of no refrigerant pollution.Using the Peltier effects of semi-conducting material,
When the galvanic couple that direct current is connected into by two kinds of different semi-conducting materials, heat can be absorbed respectively at the both ends of galvanic couple and put
Go out heat, it is possible to achieve the purpose of refrigeration；Otherwise two sides has the temperature difference then to generate electricity.
Existing photovoltaic generation chip, its structure are typically by many single N-type PN junctions and single P types PN junction half
Arrangement forms mutually for the particle of conductor, and is connected between N/P knots with general conductor into a complete loops, typically copper,
Nickel or other metallic conductors., following deficiency be present in the photovoltaic generation chip of this type：First, manufacturing process is complicated, cost is high；
Second, being limited by structure, the infrared heat energy part in sunshine can not effectively utilize, and generating efficiency is difficult further to carry
Rise；Third, being influenceed by material thermal conductivity factor itself, the semi-conducting materials such as silicon can not be used, which to make, can carry out solar energy hair
Electric and can carries out the device of thermo-electric generation.Common practice is to install thermo-electric generation sheet recovery heat energy additional behind in solar panels.
The content of the invention
The utility model solve technical problem be to overcome the shortcomings of existing device of solar generating, propose a kind of photovoltaic
The integrated chip that the temperature difference is combined.
In order to solve the above problems, the utility model employs following technical scheme：
A kind of novel photovoltaic thermo-electric generation integrated chip, including：
It is provided with insulation and thermal insulation substrate/film of through hole；
The basic unit's thermoelectricity photovoltaic being connected on the through hole inner edge and substrate/film surface with the part of through hole inner edge
Material；
The N layer thermoelectricity photovoltaic materials being successively superimposed on basic unit's thermoelectricity photovoltaic material, wherein, N >=1, and the N layers
Thermoelectricity photovoltaic material is only superimposed on basic unit's thermoelectricity photovoltaic material and is located on the part of substrate/film surface, two layers adjacent of thermoelectricity
Photovoltaic material is p-type or N type semiconductor thermoelectric photovoltaic materials with the opposite Seebeck coefficient of the close symbol of numerical value, and in friendship
PN junction is formed at boundary, a pair of thermocouples pair are formed positioned at different through holes and any two groups of materials of PN junction conducting direction conversely；
Transparency electrode, the transparency electrode and the top thermoelectricity photovoltaic material of at least one pair of thermocouple pair pass through contact point
Connection；
Output electrode, the basic unit's thermoelectricity photovoltaic material for the thermocouple pair that the output electrode connection is connected by the transparency electrode
Material, form galvanic circle.
Further, the transparency electrode connects multiple PN junction thermocouples with output electrode to forming time in parallel or series
Road.
Further, the top that the transparency electrode passes through electrically conducting transparent glue or conductive silver glue and the thermocouple pair
Thermoelectricity photovoltaic material is bonded and sintered, and forms contact point.
Optionally, the p-type or N-type semiconductor thermoelectricity photovoltaic material include but is not limited to GaAs, silicon.
Optionally, the material of the insulation and thermal insulation substrate/film includes but is not limited to insulating ceramic, PEEK plastics or vacuum
Glass microballoon modified plastics；The material of the transparency electrode includes but is not limited to tin indium oxide, the zinc oxide or graphite of aluminium doping
Alkene.
Further, it is additionally provided with one between the basic unit's thermoelectricity photovoltaic material and substrate on the insulation and thermal insulation substrate/film
Layer conductive metallic material, region where the conductive metallic material are identical with the region where basic unit thermoelectricity photovoltaic material.
Novel photovoltaic thermo-electric generation integrated chip of the present utility model, can be visible in sunshine except effectively utilizing
Infrared heat energy can also be utilized outside light, improves the efficiency of solar power generation.Meanwhile overcome the shadow of material thermal conductivity factor itself
Ring, the semi-conducting materials such as silicon can be used, which to make, can carry out the device that solar power generation and can carries out thermo-electric generation, expand significantly
The application of the semi-conducting materials such as silicon is opened up.Thermo-electric generation and photovoltaic generation are no longer limited by material in itself simultaneously, convenient association
Adjust the contradiction between heat conduction and conduction.On the other hand, when applying external voltage, integrated chip of the present utility model can be with
Used as semiconductor refrigeration chip or LED light source, equally with good refrigeration and illumination effect.It freezes and principle of luminosity
It is identical with existing semiconductor refrigerating and LED principle of luminosity, but due to its specific structure, can have preferably refrigeration and luminous effect
Fruit.
Brief description of the drawings
Fig. 1 is the structure schematic diagram of novel photovoltaic thermo-electric generation integrated chip piece embodiment of the present utility model.
Fig. 2 is the structural representation letter of novel photovoltaic thermo-electric generation integrated chip piece another kind embodiment of the present utility model
Figure.
Embodiment
For a further understanding of the utility model, the utility model preferred embodiment is retouched with reference to embodiment
State, but it is to be understood that these descriptions are simply further explanation feature and advantage of the present utility model, rather than to this practicality
The limitation of new claim.
The utility model provides a kind of novel photovoltaic thermo-electric generation integrated chip, is formed substantially for it as shown in Figure 1
The structure schematic diagram of unit.
As illustrated, the basic component units include：Substrate 1, the substrate 1 are insulation and thermal insulation substrate or film, are opened thereon
Provided with through hole 10a and 10b.On the substrate surface of through hole 10a inner edge and close through hole, basic unit's P-type semiconductor heat is provided with
Electric photovoltaic material 2a；It is located in P-type semiconductor thermoelectricity photovoltaic material 2a and is further superimposed with N-type on the part of substrate surface and partly leads
Body heat electricity photovoltaic material 3a.Two layers of semiconductor thermoelectric photovoltaic material forms first PN junction 101 in intersection.
It is similar therewith, on the substrate surface of through hole 10b inner edge and close through hole, it is provided with basic unit N type semiconductors
Thermoelectricity photovoltaic material 2b；It is located in N-type semiconductor thermoelectricity photovoltaic material 2b on the part of substrate surface and is further superimposed with p-type half
Conductor thermoelectricity photovoltaic material 3b.Two layers of semiconductor thermoelectric photovoltaic material forms second PN junction 102 in intersection.
In this way, two groups of semiconductor thermoelectric photovoltaic materials of two through holes form two different PN junctions of conducting direction,
So as to constitute a pair of thermocouples pair.
Also include transparency electrode 4 and output electrode 5a, 5b.Wherein, transparency electrode 4 is connected by contact point 201 and 202 respectively
Meet the N-type semiconductor thermoelectricity photovoltaic material 3a and P-type semiconductor thermoelectricity photovoltaic material 3b of top layer.Another side, output electrode 5a connect
P-type semiconductor thermoelectricity photovoltaic material 2a, output electrode 5b connection basic unit of basic unit N-type semiconductor thermoelectricity photovoltaic material 2b is met, so as to
By above-mentioned thermocouple to forming a galvanic circle, turn into novel photovoltaic thermo-electric generation integrated chip in the utility model
Basic component units.
Using above-mentioned open-celled structure, the thermal resistance of thermoelectricity photovoltaic material in itself in thermocouple can be transferred to substrate thermal insulation
Material, ZT values are improved, so as to improve the generating efficiency of thermocouple.Simultaneously as thermoelectric material used is unrestricted, and can lead to
Cross design regulation conductance and improve the Seebeck coefficient and power output of chip.Said structure can be by thermocouple and PN junction photoelectricity
Effect is combined, and PN junction carries out photovoltaic generation, and thermo-electric generation is carried out at contact point, and solar power generation is received so as to reach all band
Purpose, the efficiency of photovoltaic generation is provided significantly, a bright road for development is specified for photovoltaic industry.On the other hand, PN
Knot can be used as electroluminescent element to make electroluminescent cell, and above-mentioned structure is alternatively arranged as when applying external voltage
LED luminescence units and semiconductor refrigerating unit, combine photovoltaic generation, thermo-electric generation, LED lights and four kinds of semiconductor refrigerating
Function, have wide range of applications.
As shown in Fig. 2 as further improvement of the utility model, on base semiconductor thermoelectricity photovoltaic material 2a, 2b
Multi-lager semiconductor thermoelectricity photovoltaic material is successively plated with, including plates be overlying on basic unit P-type semiconductor thermoelectricity photovoltaic material 2a successively
N-type semiconductor thermoelectricity photovoltaic material 3a, P-type semiconductor thermoelectricity photovoltaic material 4a, N-type semiconductor thermoelectricity photovoltaic material 5a, with
And plating is overlying on P-type semiconductor thermoelectricity photovoltaic material 3b, N-type semiconductor on basic unit N-type semiconductor thermoelectricity photovoltaic material 2b successively
Thermoelectricity photovoltaic material 4b, P-type semiconductor thermoelectricity photovoltaic material 5b, so as to form multiple PN junctions 101/102/103/104/105/
106, with reference to contact point 201/202, further increase the efficiency of photovoltaic generation.
P-type or N-type semiconductor thermoelectricity photovoltaic material in above-described embodiment can select the semiconductor material such as GaAs, silicon
Material.Insulation and thermal insulation substrate/film can select insulating ceramic, PEEK plastics or the microsphere modified plastics of vacuum glass.Transparency electrode
The materials such as zinc oxide or the graphene that tin indium oxide, aluminium adulterate can be selected, in addition, transparency electrode only needs phototropic face transparent i.e.
Can, the back side can with it is transparent can also be opaque.It will be apparent that above-mentioned material can also select it is other with similarity
Material, it is not specifically limited herein.
Meanwhile preferably, transparency electrode passes through electrically conducting transparent glue or conductive silver glue and above-mentioned thermocouple
To top thermoelectricity photovoltaic material be bonded and sinter, form contact point.
The above embodiments are only the basic composition list of novel photovoltaic thermo-electric generation integrated chip of the present utility model
Member, it is clear that, when reality manufactures, chip is connected by above-mentioned multiple basic component units through transparency electrode and output electrode
Or it is in parallel, form galvanic circle and carry out photovoltaic and thermo-electric generation, to obtain the electric current that can be actually used.Specific connected mode exists
Existing more ripe embodiment, does not elaborate herein in existing photovoltaic generation or semiconductor refrigeration chip.
, can be first on substrate before base semiconductor thermoelectricity photovoltaic material is plated as further preferred embodiment
One layer of conductive metallic material of plating, the region of the conductive metallic material plating and the region phase of basic unit thermoelectricity photovoltaic material plating
Together, further to improve the conductance of base material, and preferably by thermal energy conduction to substrate.
The explanation of above example is only intended to help and understands method and its core concept of the present utility model.It should refer to
Go out, for those skilled in the art, can also be to this on the premise of the utility model principle is not departed from
Utility model carries out some improvement and modification, and these are improved and modification also falls into the protection domain of the utility model claims.
Claims (6)
- A kind of 1. novel photovoltaic thermo-electric generation integrated chip, it is characterised in that including：It is provided with insulation and thermal insulation substrate/film of through hole；The basic unit's thermoelectricity photovoltaic material being connected on the through hole inner edge and substrate/film surface with the part of through hole inner edge Material；The N layer thermoelectricity photovoltaic materials being successively superimposed on basic unit's thermoelectricity photovoltaic material, wherein, N >=1, and the N layers thermoelectricity Photovoltaic material is only superimposed on basic unit's thermoelectricity photovoltaic material and is located on the part of substrate/film surface, two layers adjacent of thermoelectricity photovoltaic Material is p-type or N-type semiconductor thermoelectricity photovoltaic material with the opposite Seebeck coefficient of the close symbol of numerical value, and in intersection shape Into PN junction, a pair of thermocouples pair are formed positioned at different through holes and any two groups of materials of PN junction conducting direction conversely；Transparency electrode, the transparency electrode and the top thermoelectricity photovoltaic material of at least one pair of thermocouple pair are connected by contact point Connect；Output electrode, the basic unit's thermoelectricity photovoltaic material for the thermocouple pair that the output electrode connection is connected by the transparency electrode, Form galvanic circle.
- 2. novel photovoltaic thermo-electric generation integrated chip as claimed in claim 1, it is characterised in that：The transparency electrode and defeated Go out electrode and connect multiple PN junction thermocouples to forming loop in parallel or series.
- 3. novel photovoltaic thermo-electric generation integrated chip as claimed in claim 2, it is characterised in that：The transparency electrode passes through Electrically conducting transparent glue or conductive silver glue are Nian Jie with the top thermoelectricity photovoltaic material of the thermocouple pair and sinter, and form contact Point.
- 4. the novel photovoltaic thermo-electric generation integrated chip as described in claim any one of 1-3, it is characterised in that：The p-type Or N-type semiconductor thermoelectricity photovoltaic material includes GaAs, silicon.
- 5. novel photovoltaic thermo-electric generation integrated chip as claimed in claim 4, it is characterised in that：The insulation and thermal insulation base The material of plate/film includes insulating ceramic, PEEK plastics or the microsphere modified plastics of vacuum glass；The material bag of the transparency electrode Include tin indium oxide, the zinc oxide or graphene of aluminium doping.
- 6. novel photovoltaic thermo-electric generation integrated chip as claimed in claim 5, it is characterised in that：The insulation and thermal insulation base One layer of conductive metallic material, the conductive metallic material are additionally provided between basic unit's thermoelectricity photovoltaic material and substrate on plate/film The region at place is identical with the region where basic unit thermoelectricity photovoltaic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720505771.5U CN207009456U (en) | 2017-05-09 | 2017-05-09 | A kind of novel photovoltaic thermo-electric generation integrated chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720505771.5U CN207009456U (en) | 2017-05-09 | 2017-05-09 | A kind of novel photovoltaic thermo-electric generation integrated chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207009456U true CN207009456U (en) | 2018-02-13 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720505771.5U Withdrawn - After Issue CN207009456U (en) | 2017-05-09 | 2017-05-09 | A kind of novel photovoltaic thermo-electric generation integrated chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107403851A (en) * | 2017-05-09 | 2017-11-28 | 杭州熵能热导科技有限公司 | A kind of novel photovoltaic thermo-electric generation integrated chip and its manufacture method |
-
2017
- 2017-05-09 CN CN201720505771.5U patent/CN207009456U/en not_active Withdrawn - After Issue
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107403851A (en) * | 2017-05-09 | 2017-11-28 | 杭州熵能热导科技有限公司 | A kind of novel photovoltaic thermo-electric generation integrated chip and its manufacture method |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20180213 Effective date of abandoning: 20230718 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20180213 Effective date of abandoning: 20230718 |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |