CN103560203B - A kind of simple efficient thin-film thermoelectric pool structure and preparation method thereof - Google Patents
A kind of simple efficient thin-film thermoelectric pool structure and preparation method thereof Download PDFInfo
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- CN103560203B CN103560203B CN201310504881.6A CN201310504881A CN103560203B CN 103560203 B CN103560203 B CN 103560203B CN 201310504881 A CN201310504881 A CN 201310504881A CN 103560203 B CN103560203 B CN 103560203B
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- 239000010409 thin film Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 238000009413 insulation Methods 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 claims description 6
- 229920001665 Poly-4-vinylphenol Polymers 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 3
- 230000003252 repetitive effect Effects 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 18
- 239000000178 monomer Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000007639 printing Methods 0.000 description 4
- 230000005678 Seebeck effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The invention discloses a kind of simple efficient thin-film thermoelectric pool structure, include battery hot junction, the cold end of battery and insulation and thermal insulation layer, the upper surface of the lower surface in battery hot junction and the cold end of battery is designed with metal electrode, and the metal electrode of battery hot junction and the cold end of battery connects the circuit unit forming cascaded structure by the p-type organic semiconductor and N-type organic semiconductor being embedded in insulation and thermal insulation layer；Again by connecting and composing in parallel thin film temperature difference battery between the circuit unit that structure is identical.Insulating barrier in the present invention and organic semiconducting materials are respectively provided with preferable heat-insulating property, and connect the metal of semi-conducting material and semiconductor itself has preferable electric conductivity, thus ensure that the high efficiency energy of thin film temperature difference battery converts.
Description
Technical field
The invention mainly relates to thermoelectric cell field, particularly relate to a kind of simple efficient thin-film thermoelectric pool structure and
Preparation method.
Background technology
Thermoelectric cell, it is simply that utilize temperature contrast, makes heat energy be converted into the device of electric energy.The material one of thermoelectric cell
As have metal and semiconductor two kinds.The battery Seebeck effect made with metal is less, is usually used in measuring temperature, radiation intensity
Deng.The thermoelectric cell Seebeck effect made with semiconductor is relatively strong, and the efficiency that heat energy is converted into electric energy is the highest, therefore, and can be by
Multiple such batteries composition thermopile, as small-power power.Its operation principle is, by two distinct types of thermoelectricity
One end of transition material N-type and P-type semiconductor combines and is placed on the condition of high temperature, when the other end is opened a way and gives low temperature, by
Relatively strong in the thermal excitation effect of temperature end, hole and electron concentration are also high than low-temperature end, driving of this carrier density gradient
Under Dong, hole and electronics spread to low-temperature end, thus form electrical potential difference at low temperature open end;If by many to p-type and N-type heat
Electricity transition material couples together comprising modules, so that it may obtains sufficiently high voltage, forms a thermal generator.
The a large amount of use of the current whole world conventional chemical energy is being aggravated energy crisis always and is bringing the environment such as climate warming
Problem, in the urgent need to actively pushing forward to use clean renewable resource.Thermoelectric cell is clear as a kind of applicable low power applications
The clean energy, has noiselessness, the series of advantages such as unharmful substance discharges, and reliability is high, life-span length, and it can be long-term, safety, even
The electric energy providing stable exports continuously, can effectively reduce hot driving simultaneously.At present, mainly by thermoelectric material dicing, then
Welding, forms thermoelectric cell；Make in the method for thermoelectric cell, mainly have two classes, a class method to be: be coated with on same substrate
Apply photoresists, on photoresists, successively form p-type and N-type microcell by the method for Twi-lithography, afterwards successively in p-type and N-type
Deposition p-type and N-type thermoelectric material in microcell.This preparation method difficulty is big, particularly in the conduction connecting thermoelectric monomer
In layer production process, need the whole stripping of thermoelectric monomer deposited on substrate and its；Another kind of method is: p-type temperature
Difference electricity monomer substrate separates independent making with N-type thermoelectric monomer substrate so that in the manufacture process of microfilm thermoelectric cell
In, the manufacture connecting p-type and N-type thermoelectric monomeric conductive layer just can be entered under conditions of substrate is not peeled off with thermoelectric monomer
OK.Utilizing said method to manufacture the complex process of thermoelectric cell, the film portion of monomer thermoelectric cell also pertains only to single thin film,
The performance of thermoelectric cell is also restricted.
1911, German A Chike wished and proposes a gratifying temperature-difference thermoelectric refrigeration and the theory of generating, and
Propose thermoelectric figure of merit formula:
Z=S2σ/k (wherein S is the Seebeck coefficient of material, and σ is electrical conductivity, and k is thermal conductivity)
No matter being used for generating electricity or freezing, the Z value of thermoelectric material is the highest more good knowable to formula above, and material to obtain
High Z value, should have high Seebeck coefficient S, high conductivityσ and low thermal conductivity k, so good thermoelectric material is necessary
To conduct electricity as crystal, heat conduction as glass again simultaneously, but be inconvenient in conventional material.Inorganic semiconductor thermoelectricity
Material remains important thermoelectric material, and organic semiconductor is in conduction and heat to electricity conversion performance and inorganic semiconductor very phase
Seemingly, and the preferable heat-insulating property of organic semiconducting materials is also the considerable advantage manufacturing thermoelectric cell, and this is also this
Patent selects one major reason of organic semi-conductor.
Summary of the invention
The object of the invention is contemplated to make up the defect of prior art, it is provided that a kind of simple efficient thin film temperature difference battery knot
Structure and preparation method thereof.
The present invention is achieved by the following technical solutions:
A kind of simple efficient thin-film thermoelectric pool structure, it is characterised in that: include battery hot junction, the cold end of battery and absolutely
Edge heat insulation layer, the lower surface in described battery hot junction and the upper surface of the cold end of battery are designed with metal electrode, battery hot junction and electricity
The metal electrode of Chi Lengduan connects to be formed by the p-type organic semiconductor and N-type organic semiconductor being embedded in insulation and thermal insulation layer goes here and there
The circuit unit of connection structure；Again by connecting and composing in parallel thin film temperature difference battery between the circuit unit that structure is identical.
The preparation method of a kind of simple efficient thin film temperature difference battery, it is characterised in that comprise the following steps:
(1) lower surface in battery hot junction or the metal electrode of the upper surface of the cold end of battery are first made
In the thermal-conductivity substrate of the cold end in battery hot junction or battery, first prepare pattern metal film as battery hot junction or battery
The electrode of cold end, the most on the electrodes one layer of insulation and thermal insulation layer of spin coating, such as poly-(4-Vinyl phenol)；With organic solvent,
Such as propylene glycol methyl ether acetate, poly-(4-Vinyl phenol) above described electrode both sides is completely dissolved formation and penetrates poly-
The through hole of (4-Vinyl phenol) insulation and thermal insulation layer；
(2) p-type organic semiconductor, N-type organic semiconductor are printed respectively at lead to the hole site
Organic by printing p-type organic semiconductor and N-type in the method for inkjet printing through hole above the electrode prepared
Semiconductor；
(3) metal electrode of the battery other end is made
Prepare the metal electrode of the other end, printing p-type organic semiconductor in through-holes and N-type organic semiconductor respectively
The N-type organic semiconductor of the circuit unit adjacent with both sides and p-type organic semiconductor are alternately connected；
(4) thermal insulation layer of the battery other end is made；
(5) electromotive force that the single battery source constituted due to described circuit unit produces is very limited, so using identical
Step made multiple repetitive structures of described circuit unit, then series connection composition battery pack simultaneously；Again by lead-in wire wiring
Each point of battery pack is together in series or parallel, forms total battery module；
(6) cell package is completed.
The principle of the present invention is:
P-type and N-type organic semiconductor are converted to electricity as efficient thermo-electric converting material the temperature difference of heat insulation layer both sides
Can, stored by electrical return rapidly and efficiently or for driving other power devices.
Insulating barrier and organic semiconducting materials in the present invention are respectively provided with preferable heat-insulating property, and connect semiconductor material
The metal of material and semiconductor itself have preferable electric conductivity, thus ensure that the high efficiency energy of thin film temperature difference battery converts.
Compared with the prior art, the present invention has the beneficial effect that:
1, patterning can be formed in micro-scaled range due to inkjet printing, thus with the structure phase of conventional thermoelectric cell
Ratio: use inkjet printing can realize more efficient energy conversion under the conditions of same size.
2, inkjet technology can be extensive, accurately makes membrane array, significantly simplifies technological process, and save
Raw material.
3, used thin-film material, less compared with other material phase specific volume, weight is lighter, and thin film thermoelectric materials
Characteristic is preferable.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the sectional view of each point of battery pack.
Fig. 3 is series connecting temperature different battery group final structure stereogram.
Description of symbols:
1. the battery hot junction 2. metal electrode 3.N type organic semiconductor 4.P type organic semiconductor 5. cold end of battery
6. lead-in wire.
Detailed description of the invention
As shown in Figure 1, 2, 3, a kind of simple efficient thin-film thermoelectric pool structure, include battery hot junction 1, the cold end of battery
5 and insulation and thermal insulation layer, the lower surface in described battery hot junction 1 and the upper surface of the cold end of battery 5 be designed with metal electrode 2, battery
The metal electrode of hot junction 1 and the cold end of battery 5 is by being embedded in p-type organic semiconductor 4 and the N-type organic semiconductor of insulation and thermal insulation layer
3 connect the circuit unit forming cascaded structure；Again by connecting and composing in parallel thin-film between the circuit unit that structure is identical
Battery.
The preparation method of a kind of simple efficient thin film temperature difference battery, comprises the following steps:
(1) lower surface in battery hot junction or the metal electrode of the upper surface of the cold end of battery are first made
In the thermal-conductivity substrate of the cold end in battery hot junction or battery, first prepare pattern metal film as battery hot junction or battery
The electrode of cold end, the most on the electrodes one layer of insulation and thermal insulation layer of spin coating, such as poly-(4-Vinyl phenol)；With organic solvent,
Such as propylene glycol methyl ether acetate, poly-(4-Vinyl phenol) above described electrode both sides is completely dissolved formation and penetrates poly-
The through hole of (4-Vinyl phenol) insulation and thermal insulation layer；
(2) p-type organic semiconductor, N-type organic semiconductor are printed respectively at lead to the hole site
Organic by printing p-type organic semiconductor and N-type in the method for inkjet printing through hole above the electrode prepared
Semiconductor；
(3) metal electrode of the battery other end is made
Prepare the metal electrode of the other end, printing p-type organic semiconductor in through-holes and N-type organic semiconductor respectively
The N-type organic semiconductor of the circuit unit adjacent with both sides and p-type organic semiconductor are alternately connected；
(4) thermal insulation layer of the battery other end is made；
(5) electromotive force that the single battery source constituted due to described circuit unit produces is very limited, so using identical
Step made multiple repetitive structures of described circuit unit, then series connection composition battery pack simultaneously；Again by 6 wiring that go between
Each point of battery pack is together in series or parallel, forms total battery module；
(6) cell package is completed.
The method of battery series connection can promote self electromotive force of battery well, but series battery cells internal resistance meeting
Excessive, and if one of them battery go wrong, whole battery pack is likely to quit work, in order to avoid above both
Situation, it is also possible to by the lead-in wire 6 in Fig. 3, battery pack is connected into the structure of parallel connection.Can not but batteries in parallel connection is noted that
Make each batteries in parallel connection internal resistance gap excessive, be otherwise likely to result in the electric current between them Nei circulation.
Claims (1)
1. the preparation method of a simple efficient thin film temperature difference battery, it is characterised in that comprise the following steps:
(1) metal electrode of the lower surface in battery hot junction or the upper surface of the cold end of battery is first made first at battery hot junction or battery
The pattern metal film electrode as the cold end in battery hot junction or battery is prepared, then at described electricity in the insulating heat-conductive substrate of cold end
Extremely go up one layer of insulation and thermal insulation strata (4-Vinyl phenol) of spin coating；Use organic solvent propylene glycol methyl ether acetate, by described electricity
Poly-(4-Vinyl phenol) above both sides, pole is completely dissolved formation and penetrates the through hole of poly-(4-Vinyl phenol) insulation and thermal insulation layer；
(2) print p-type organic semiconductor respectively at lead to the hole site, the method for N-type organic semiconductor inkjet printing is being prepared
Electrode above through hole in print p-type organic semiconductor and N-type organic semiconductor；
(3) metal electrode of the other end prepared by the metal electrode making the battery other end, organic for the p-type printed in through-holes
Semiconductor and the N-type organic semiconductor of adjacent with the both sides respectively circuit unit of N-type organic semiconductor and p-type organic semiconductor are handed over
For being connected；
(4) thermal insulation layer of the battery other end is made；
(5) electromotive force that the single battery source constituted due to described circuit unit produces is very limited, so using identical step
The rapid multiple repetitive structures simultaneously having made described circuit unit, then series connection composition battery pack；Again will be each by lead-in wire wiring
Point battery pack is together in series or parallel, and forms total battery module；
(6) cell package is completed.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310504881.6A CN103560203B (en) | 2013-10-23 | 2013-10-23 | A kind of simple efficient thin-film thermoelectric pool structure and preparation method thereof |
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| CN201310504881.6A CN103560203B (en) | 2013-10-23 | 2013-10-23 | A kind of simple efficient thin-film thermoelectric pool structure and preparation method thereof |
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| CN103560203B true CN103560203B (en) | 2016-09-07 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106384780B (en) * | 2016-03-06 | 2019-03-19 | 武汉理工大学 | A method of quickly preparing thermo-electric device |
| CN106301082A (en) * | 2016-08-31 | 2017-01-04 | 广东格兰仕集团有限公司 | The microwave oven magnetic of tool thermo-electric generation |
| CN107403851B (en) * | 2017-05-09 | 2023-07-18 | 五好科技(浙江)有限公司 | Photovoltaic thermoelectric generation integrated chip and manufacturing method thereof |
| CN108550688A (en) * | 2018-05-24 | 2018-09-18 | 中国科学院上海硅酸盐研究所 | A kind of thermo-electric device with adaptive connection layer |
| CN110429172A (en) * | 2019-07-17 | 2019-11-08 | 中国科学院上海硅酸盐研究所 | A kind of thermo-electric device and preparation method thereof |
| CN111064391B (en) * | 2019-12-31 | 2022-12-13 | 中国电子科技集团公司第十八研究所 | High-energy-conversion-efficiency cascade thermoelectric power generation unit |
| CN111579105B (en) * | 2020-03-30 | 2022-10-11 | 中国电力科学研究院有限公司 | Self-powered cable temperature measuring device |
| CN113583193B (en) * | 2021-08-16 | 2022-09-20 | 南京工业大学 | Photo-thermal ion gel film and preparation method and application thereof |
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|---|---|---|---|---|
| US6274803B1 (en) * | 1999-08-10 | 2001-08-14 | Matsushita Electric Works, Ltd. | Thermoelectric module with improved heat-transfer efficiency and method of manufacturing the same |
| CN101136448A (en) * | 2006-08-28 | 2008-03-05 | 邓贤金 | Integrated heat radiation type high-power semiconductor thermoelectric chip component |
| JP2008109054A (en) * | 2006-10-27 | 2008-05-08 | Toyota Industries Corp | Thermoelectric conversion module and method for manufacturing the same |
| CN101542763A (en) * | 2006-11-21 | 2009-09-23 | 赢创德固赛有限责任公司 | Thermoelectric elements, method for the production thereof, and use thereof |
| CN103296191A (en) * | 2012-02-28 | 2013-09-11 | 中国科学院上海微系统与信息技术研究所 | Minitype thermoelectric energy collector and manufacturing method thereof |
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- 2013-10-23 CN CN201310504881.6A patent/CN103560203B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6274803B1 (en) * | 1999-08-10 | 2001-08-14 | Matsushita Electric Works, Ltd. | Thermoelectric module with improved heat-transfer efficiency and method of manufacturing the same |
| CN101136448A (en) * | 2006-08-28 | 2008-03-05 | 邓贤金 | Integrated heat radiation type high-power semiconductor thermoelectric chip component |
| JP2008109054A (en) * | 2006-10-27 | 2008-05-08 | Toyota Industries Corp | Thermoelectric conversion module and method for manufacturing the same |
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