JP2017511294A5 - - Google Patents
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- Publication number
- JP2017511294A5 JP2017511294A5 JP2016560766A JP2016560766A JP2017511294A5 JP 2017511294 A5 JP2017511294 A5 JP 2017511294A5 JP 2016560766 A JP2016560766 A JP 2016560766A JP 2016560766 A JP2016560766 A JP 2016560766A JP 2017511294 A5 JP2017511294 A5 JP 2017511294A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride
- rare earth
- magnesium
- doped rare
- nitride material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052761 rare earth metal Inorganic materials 0.000 claims 25
- -1 Rare earth nitrides Chemical class 0.000 claims 24
- 239000000463 material Substances 0.000 claims 19
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 11
- 229910052749 magnesium Inorganic materials 0.000 claims 11
- 239000011777 magnesium Substances 0.000 claims 11
- 238000000034 method Methods 0.000 claims 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 9
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- IBIOTXDDKRNYMC-UHFFFAOYSA-N azanylidynedysprosium Chemical compound [Dy]#N IBIOTXDDKRNYMC-UHFFFAOYSA-N 0.000 claims 2
- VZVZYLVXLCEAMR-UHFFFAOYSA-N azanylidyneerbium Chemical compound [Er]#N VZVZYLVXLCEAMR-UHFFFAOYSA-N 0.000 claims 2
- PSBUJOCDKOWAGJ-UHFFFAOYSA-N azanylidyneeuropium Chemical compound [Eu]#N PSBUJOCDKOWAGJ-UHFFFAOYSA-N 0.000 claims 2
- FLATXDRVRRDFBZ-UHFFFAOYSA-N azanylidynegadolinium Chemical compound [Gd]#N FLATXDRVRRDFBZ-UHFFFAOYSA-N 0.000 claims 2
- YKIJUSDIPBWHAH-UHFFFAOYSA-N azanylidyneholmium Chemical compound [Ho]#N YKIJUSDIPBWHAH-UHFFFAOYSA-N 0.000 claims 2
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 claims 2
- DPDGELPGCPPHSN-UHFFFAOYSA-N azanylidynelutetium Chemical compound [Lu]#N DPDGELPGCPPHSN-UHFFFAOYSA-N 0.000 claims 2
- OVMJQLNJCSIJCH-UHFFFAOYSA-N azanylidyneneodymium Chemical compound [Nd]#N OVMJQLNJCSIJCH-UHFFFAOYSA-N 0.000 claims 2
- JCWZBEIBQMTAIH-UHFFFAOYSA-N azanylidynepraseodymium Chemical compound [Pr]#N JCWZBEIBQMTAIH-UHFFFAOYSA-N 0.000 claims 2
- SZZXSKFKZJTWOY-UHFFFAOYSA-N azanylidynesamarium Chemical compound [Sm]#N SZZXSKFKZJTWOY-UHFFFAOYSA-N 0.000 claims 2
- DOHQPUDBULHKAI-UHFFFAOYSA-N azanylidyneterbium Chemical compound [Tb]#N DOHQPUDBULHKAI-UHFFFAOYSA-N 0.000 claims 2
- PTXUCVLZGJKEFB-UHFFFAOYSA-N azanylidynethulium Chemical compound [Tm]#N PTXUCVLZGJKEFB-UHFFFAOYSA-N 0.000 claims 2
- XLWMYKCPNRBIDK-UHFFFAOYSA-N azanylidyneytterbium Chemical compound [Yb]#N XLWMYKCPNRBIDK-UHFFFAOYSA-N 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 2
- 230000005294 ferromagnetic effect Effects 0.000 claims 2
- 238000005259 measurement Methods 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 150000002910 rare earth metals Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NZ623339 | 2014-04-02 | ||
| NZ62333914 | 2014-04-02 | ||
| PCT/NZ2015/050039 WO2015152737A2 (en) | 2014-04-02 | 2015-03-31 | Doped rare earth nitride materials and devices comprising same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017511294A JP2017511294A (ja) | 2017-04-20 |
| JP2017511294A5 true JP2017511294A5 (enExample) | 2018-05-17 |
| JP6618481B2 JP6618481B2 (ja) | 2019-12-11 |
Family
ID=54241412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016560766A Expired - Fee Related JP6618481B2 (ja) | 2014-04-02 | 2015-03-31 | ドープト希土類窒化物材料および同材料を含むデバイス |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10415153B2 (enExample) |
| EP (1) | EP3127146A4 (enExample) |
| JP (1) | JP6618481B2 (enExample) |
| KR (1) | KR102328525B1 (enExample) |
| CN (1) | CN106460229B (enExample) |
| NZ (1) | NZ725495A (enExample) |
| WO (1) | WO2015152737A2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NZ725497A (en) * | 2014-04-02 | 2020-05-29 | Franck Natali | Magnetic materials and devices comprising rare earth nitrides |
| US9673281B2 (en) * | 2015-09-08 | 2017-06-06 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions |
| US10229839B2 (en) * | 2016-04-29 | 2019-03-12 | The United States Of America, As Represented By The Secretary Of The Navy | Transition metal-bearing capping film for group III-nitride devices |
| JP7131835B2 (ja) * | 2016-12-07 | 2022-09-06 | ビクトリア リンク リミテッド | 希土類窒化物構造体およびデバイスならびに不動態化キャッピングを除去するための方法 |
| US10043871B1 (en) * | 2017-04-06 | 2018-08-07 | Ecole Polytechnique Federale De Lausanne (Epfl) | Rare earth nitride and group III-nitride structure or device |
| AU2018297668B2 (en) * | 2017-07-03 | 2023-11-16 | Victoria Link Limited | Ammonia production method and apparatus for ammonia production |
| JP7398803B2 (ja) * | 2020-02-27 | 2023-12-15 | 国立研究開発法人産業技術総合研究所 | 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたmemsデバイス |
Family Cites Families (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8628609D0 (en) * | 1986-11-29 | 1987-01-07 | Bp Chemicals Additives | Lubricating oil additives |
| GB9213723D0 (en) * | 1992-06-27 | 1992-08-12 | Bp Chemicals Additives | Process for the production of lubricating oil additives |
| US5611955A (en) | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
| JPH11121215A (ja) * | 1997-10-15 | 1999-04-30 | Hitachi Metals Ltd | 希土類磁石粉末の製造方法 |
| US5998232A (en) | 1998-01-16 | 1999-12-07 | Implant Sciences Corporation | Planar technology for producing light-emitting devices |
| CA2311061C (en) | 1999-06-11 | 2009-10-06 | National Research Council Of Canada | Molecular beam epitaxy (mbe) growth of semi-insulating c-doped gan |
| US7316837B2 (en) | 2000-07-21 | 2008-01-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| FR2829867B1 (fr) | 2001-09-20 | 2003-12-19 | Centre Nat Rech Scient | Memoire magnetique a selection a l'ecriture par inhibition et procede pour son ecriture |
| FR2829868A1 (fr) | 2001-09-20 | 2003-03-21 | Centre Nat Rech Scient | Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture |
| JP3592282B2 (ja) | 2001-10-01 | 2004-11-24 | キヤノン株式会社 | 磁気抵抗効果膜、およびそれを用いたメモリ |
| JP2004172218A (ja) | 2002-11-18 | 2004-06-17 | Sony Corp | 磁気記憶素子及びその記録方法、並びに磁気記憶装置 |
| CN1756856B (zh) * | 2003-02-27 | 2011-10-12 | 希莫菲克斯公司 | 电介质阻挡层膜 |
| US7170095B2 (en) | 2003-07-11 | 2007-01-30 | Cree Inc. | Semi-insulating GaN and method of making the same |
| US20050122828A1 (en) | 2003-09-29 | 2005-06-09 | Matsushita Electric Industrial Co., Ltd. | Magnetic switching device and memory using the same |
| US7271981B2 (en) | 2003-11-20 | 2007-09-18 | Seagate Technology Llc | Ultrafast pulse field source utilizing optically induced magnetic transformation |
| JP4792714B2 (ja) | 2003-11-28 | 2011-10-12 | ソニー株式会社 | 記憶素子及び記憶装置 |
| EP1697585A4 (en) | 2003-12-15 | 2009-04-08 | Univ Yale | MAGNETOELECTRONIC DEVICES BASED ON THIN-LAYERED FILMS WITH CMR (LARGE MAGNETO-RESISTOR) |
| JP4830275B2 (ja) | 2004-07-22 | 2011-12-07 | ソニー株式会社 | 記憶素子 |
| WO2006030814A1 (ja) | 2004-09-14 | 2006-03-23 | Matsushita Electric Industrial Co., Ltd. | 抵抗変化素子及びそれを用いた不揮発性メモリ |
| US7313013B2 (en) | 2004-11-18 | 2007-12-25 | International Business Machines Corporation | Spin-current switchable magnetic memory element and method of fabricating the memory element |
| US7037806B1 (en) | 2005-02-09 | 2006-05-02 | Translucent Inc. | Method of fabricating silicon-on-insulator semiconductor substrate using rare earth oxide or rare earth nitride |
| US7253080B1 (en) | 2005-02-09 | 2007-08-07 | Translucent Inc. | Silicon-on-insulator semiconductor wafer |
| JP2006269688A (ja) | 2005-03-23 | 2006-10-05 | National Institute Of Advanced Industrial & Technology | 不揮発性メモリ素子 |
| WO2006101152A1 (ja) | 2005-03-23 | 2006-09-28 | National Institute Of Advanced Industrial Science And Technology | 不揮発性メモリ素子 |
| US7489073B2 (en) | 2005-04-15 | 2009-02-10 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Blue to yellow-orange emitting phosphor, and light source having such a phosphor |
| US7489541B2 (en) | 2005-08-23 | 2009-02-10 | Grandis, Inc. | Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements |
| JP2007080311A (ja) | 2005-09-12 | 2007-03-29 | Sony Corp | 記憶装置及び半導体装置 |
| JP4719035B2 (ja) | 2006-03-13 | 2011-07-06 | 株式会社東芝 | 不揮発性半導体メモリ装置及びその製造方法 |
| US7518216B2 (en) | 2006-03-20 | 2009-04-14 | Sumitomo Electric Industries, Ltd. | Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride |
| US7816737B2 (en) | 2006-03-31 | 2010-10-19 | Tokyo Electron Limited | Semiconductor device with gate dielectric containing mixed rare earth elements |
| US8012442B2 (en) | 2006-03-31 | 2011-09-06 | Tokyo Electron Limited | Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition |
| US7466585B2 (en) | 2006-04-28 | 2008-12-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic random access memory |
| JP2009539237A (ja) * | 2006-06-02 | 2009-11-12 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 新規なチタン、ジルコニウムおよびハフニウム前駆体をベースとするhigh−k誘電体フィルムを形成する方法および半導体製造におけるそれらの使用 |
| US20080079111A1 (en) * | 2006-09-29 | 2008-04-03 | Tokyo Electron Limited | Semiconductor devices containing nitrided high dielectric constant films |
| US7820552B2 (en) * | 2007-03-13 | 2010-10-26 | International Business Machines Corporation | Advanced high-k gate stack patterning and structure containing a patterned high-k gate stack |
| JP5103979B2 (ja) * | 2007-03-27 | 2012-12-19 | 豊田合成株式会社 | III族窒化物系化合物半導体に対する電極形成方法及びp型III族窒化物系化合物半導体の製造方法 |
| JP2008274342A (ja) | 2007-04-27 | 2008-11-13 | Tosoh Corp | プラズマ耐蝕性材料およびそれを含んでなる部材 |
| CN100524863C (zh) * | 2007-07-05 | 2009-08-05 | 武汉大学 | 一种电致发光二极管的制备方法 |
| JP5050813B2 (ja) | 2007-11-29 | 2012-10-17 | ソニー株式会社 | メモリセル |
| WO2009074411A1 (en) | 2007-12-13 | 2009-06-18 | Crocus Technology | Magnetic memory with a thermally assisted writing procedure |
| US7920416B2 (en) | 2008-03-12 | 2011-04-05 | International Business Machines Corporation | Increased magnetic damping for toggle MRAM |
| JP5509731B2 (ja) * | 2008-08-04 | 2014-06-04 | 株式会社三徳 | 希土類窒化物およびその製造方法、ならびに磁気冷凍材料および蓄冷材料 |
| US20100109018A1 (en) | 2008-10-31 | 2010-05-06 | The Regents Of The University Of California | Method of fabricating semi-insulating gallium nitride using an aluminum gallium nitride blocking layer |
| JP5578448B2 (ja) | 2009-09-17 | 2014-08-27 | 富士電機株式会社 | 磁気抵抗素子及びそれを用いた不揮発性半導体記憶装置 |
| JP5825920B2 (ja) * | 2010-08-11 | 2015-12-02 | 太平洋セメント株式会社 | 金属窒化物の製造方法 |
| JP5988017B2 (ja) * | 2011-10-19 | 2016-09-07 | 国立研究開発法人産業技術総合研究所 | 希土類窒化物系等方性焼結磁石とその製造方法 |
| JP2013170098A (ja) * | 2012-02-21 | 2013-09-02 | Nippon Telegr & Teleph Corp <Ntt> | 遷移金属窒化物薄膜の製造方法および装置 |
| US20130251942A1 (en) * | 2012-03-23 | 2013-09-26 | Gisele Azimi | Hydrophobic Materials Incorporating Rare Earth Elements and Methods of Manufacture |
| WO2013141953A2 (en) | 2012-03-23 | 2013-09-26 | Massachusetts Institute Of Technology | Liquid-encapsulated rare-earth based ceramic surfaces |
-
2015
- 2015-03-31 KR KR1020167030552A patent/KR102328525B1/ko not_active Expired - Fee Related
- 2015-03-31 EP EP15772411.3A patent/EP3127146A4/en not_active Withdrawn
- 2015-03-31 NZ NZ725495A patent/NZ725495A/en not_active IP Right Cessation
- 2015-03-31 JP JP2016560766A patent/JP6618481B2/ja not_active Expired - Fee Related
- 2015-03-31 CN CN201580024829.8A patent/CN106460229B/zh active Active
- 2015-03-31 WO PCT/NZ2015/050039 patent/WO2015152737A2/en not_active Ceased
- 2015-03-31 US US15/300,757 patent/US10415153B2/en active Active
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