KR102328525B1 - 도핑된 희토류 니트라이드 물질 및 이를 포함하는 장치 - Google Patents

도핑된 희토류 니트라이드 물질 및 이를 포함하는 장치 Download PDF

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KR102328525B1
KR102328525B1 KR1020167030552A KR20167030552A KR102328525B1 KR 102328525 B1 KR102328525 B1 KR 102328525B1 KR 1020167030552 A KR1020167030552 A KR 1020167030552A KR 20167030552 A KR20167030552 A KR 20167030552A KR 102328525 B1 KR102328525 B1 KR 102328525B1
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rare earth
nitride
delete delete
magnesium
earth nitride
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KR20170005409A (ko
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프랭크 나탈리
벤자민 존 럭
해리 조셉 트로달
스테판 앤지 베지안
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프랭크 나탈리
벤자민 존 럭
해리 조셉 트로달
스테판 앤지 베지안
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KR1020167030552A 2014-04-02 2015-03-31 도핑된 희토류 니트라이드 물질 및 이를 포함하는 장치 Expired - Fee Related KR102328525B1 (ko)

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Application Number Priority Date Filing Date Title
NZ623339 2014-04-02
NZ62333914 2014-04-02
PCT/NZ2015/050039 WO2015152737A2 (en) 2014-04-02 2015-03-31 Doped rare earth nitride materials and devices comprising same

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KR20170005409A KR20170005409A (ko) 2017-01-13
KR102328525B1 true KR102328525B1 (ko) 2021-11-19

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US (1) US10415153B2 (enExample)
EP (1) EP3127146A4 (enExample)
JP (1) JP6618481B2 (enExample)
KR (1) KR102328525B1 (enExample)
CN (1) CN106460229B (enExample)
NZ (1) NZ725495A (enExample)
WO (1) WO2015152737A2 (enExample)

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NZ725497A (en) * 2014-04-02 2020-05-29 Franck Natali Magnetic materials and devices comprising rare earth nitrides
US9673281B2 (en) * 2015-09-08 2017-06-06 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions
US10229839B2 (en) * 2016-04-29 2019-03-12 The United States Of America, As Represented By The Secretary Of The Navy Transition metal-bearing capping film for group III-nitride devices
JP7131835B2 (ja) * 2016-12-07 2022-09-06 ビクトリア リンク リミテッド 希土類窒化物構造体およびデバイスならびに不動態化キャッピングを除去するための方法
US10043871B1 (en) * 2017-04-06 2018-08-07 Ecole Polytechnique Federale De Lausanne (Epfl) Rare earth nitride and group III-nitride structure or device
AU2018297668B2 (en) * 2017-07-03 2023-11-16 Victoria Link Limited Ammonia production method and apparatus for ammonia production
JP7398803B2 (ja) * 2020-02-27 2023-12-15 国立研究開発法人産業技術総合研究所 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス

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