CN106460229B - 掺杂的稀土氮化物材料和包含其的器件 - Google Patents
掺杂的稀土氮化物材料和包含其的器件 Download PDFInfo
- Publication number
- CN106460229B CN106460229B CN201580024829.8A CN201580024829A CN106460229B CN 106460229 B CN106460229 B CN 106460229B CN 201580024829 A CN201580024829 A CN 201580024829A CN 106460229 B CN106460229 B CN 106460229B
- Authority
- CN
- China
- Prior art keywords
- rare earth
- magnesium
- earth nitride
- nitride material
- doped rare
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3446—Transition metal elements; Rare earth elements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2921—Materials being crystalline insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2926—Crystal orientations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3216—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3416—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3442—N-type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3444—P-type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6332—Deposition from the gas or vapour phase using thermal evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6349—Deposition of epitaxial materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69396—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Ceramic Products (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NZ623339 | 2014-04-02 | ||
| NZ62333914 | 2014-04-02 | ||
| PCT/NZ2015/050039 WO2015152737A2 (en) | 2014-04-02 | 2015-03-31 | Doped rare earth nitride materials and devices comprising same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106460229A CN106460229A (zh) | 2017-02-22 |
| CN106460229B true CN106460229B (zh) | 2019-12-10 |
Family
ID=54241412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580024829.8A Active CN106460229B (zh) | 2014-04-02 | 2015-03-31 | 掺杂的稀土氮化物材料和包含其的器件 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10415153B2 (enExample) |
| EP (1) | EP3127146A4 (enExample) |
| JP (1) | JP6618481B2 (enExample) |
| KR (1) | KR102328525B1 (enExample) |
| CN (1) | CN106460229B (enExample) |
| NZ (1) | NZ725495A (enExample) |
| WO (1) | WO2015152737A2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NZ725497A (en) * | 2014-04-02 | 2020-05-29 | Franck Natali | Magnetic materials and devices comprising rare earth nitrides |
| US9673281B2 (en) * | 2015-09-08 | 2017-06-06 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions |
| US10229839B2 (en) * | 2016-04-29 | 2019-03-12 | The United States Of America, As Represented By The Secretary Of The Navy | Transition metal-bearing capping film for group III-nitride devices |
| JP7131835B2 (ja) * | 2016-12-07 | 2022-09-06 | ビクトリア リンク リミテッド | 希土類窒化物構造体およびデバイスならびに不動態化キャッピングを除去するための方法 |
| US10043871B1 (en) * | 2017-04-06 | 2018-08-07 | Ecole Polytechnique Federale De Lausanne (Epfl) | Rare earth nitride and group III-nitride structure or device |
| AU2018297668B2 (en) * | 2017-07-03 | 2023-11-16 | Victoria Link Limited | Ammonia production method and apparatus for ammonia production |
| JP7398803B2 (ja) * | 2020-02-27 | 2023-12-15 | 国立研究開発法人産業技術総合研究所 | 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたmemsデバイス |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87108239A (zh) * | 1986-11-29 | 1988-06-15 | Bp化学有限公司 | 碱土金属烃基酚盐及其磁化衍生物,它们的制备和应用 |
| CN1083520A (zh) * | 1992-06-27 | 1994-03-09 | 英国石油化学品(添加剂)有限公司 | 含碱土金属硫化烃基酚盐的添加剂浓缩物及其制备方法和应用 |
| CN101101947A (zh) * | 2007-07-05 | 2008-01-09 | 武汉大学 | 一种电致发光二极管的制备方法 |
| WO2013141953A2 (en) * | 2012-03-23 | 2013-09-26 | Massachusetts Institute Of Technology | Liquid-encapsulated rare-earth based ceramic surfaces |
Family Cites Families (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5611955A (en) | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
| JPH11121215A (ja) * | 1997-10-15 | 1999-04-30 | Hitachi Metals Ltd | 希土類磁石粉末の製造方法 |
| US5998232A (en) | 1998-01-16 | 1999-12-07 | Implant Sciences Corporation | Planar technology for producing light-emitting devices |
| CA2311061C (en) | 1999-06-11 | 2009-10-06 | National Research Council Of Canada | Molecular beam epitaxy (mbe) growth of semi-insulating c-doped gan |
| US7316837B2 (en) | 2000-07-21 | 2008-01-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| FR2829867B1 (fr) | 2001-09-20 | 2003-12-19 | Centre Nat Rech Scient | Memoire magnetique a selection a l'ecriture par inhibition et procede pour son ecriture |
| FR2829868A1 (fr) | 2001-09-20 | 2003-03-21 | Centre Nat Rech Scient | Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture |
| JP3592282B2 (ja) | 2001-10-01 | 2004-11-24 | キヤノン株式会社 | 磁気抵抗効果膜、およびそれを用いたメモリ |
| JP2004172218A (ja) | 2002-11-18 | 2004-06-17 | Sony Corp | 磁気記憶素子及びその記録方法、並びに磁気記憶装置 |
| CN1756856B (zh) * | 2003-02-27 | 2011-10-12 | 希莫菲克斯公司 | 电介质阻挡层膜 |
| US7170095B2 (en) | 2003-07-11 | 2007-01-30 | Cree Inc. | Semi-insulating GaN and method of making the same |
| US20050122828A1 (en) | 2003-09-29 | 2005-06-09 | Matsushita Electric Industrial Co., Ltd. | Magnetic switching device and memory using the same |
| US7271981B2 (en) | 2003-11-20 | 2007-09-18 | Seagate Technology Llc | Ultrafast pulse field source utilizing optically induced magnetic transformation |
| JP4792714B2 (ja) | 2003-11-28 | 2011-10-12 | ソニー株式会社 | 記憶素子及び記憶装置 |
| EP1697585A4 (en) | 2003-12-15 | 2009-04-08 | Univ Yale | MAGNETOELECTRONIC DEVICES BASED ON THIN-LAYERED FILMS WITH CMR (LARGE MAGNETO-RESISTOR) |
| JP4830275B2 (ja) | 2004-07-22 | 2011-12-07 | ソニー株式会社 | 記憶素子 |
| WO2006030814A1 (ja) | 2004-09-14 | 2006-03-23 | Matsushita Electric Industrial Co., Ltd. | 抵抗変化素子及びそれを用いた不揮発性メモリ |
| US7313013B2 (en) | 2004-11-18 | 2007-12-25 | International Business Machines Corporation | Spin-current switchable magnetic memory element and method of fabricating the memory element |
| US7037806B1 (en) | 2005-02-09 | 2006-05-02 | Translucent Inc. | Method of fabricating silicon-on-insulator semiconductor substrate using rare earth oxide or rare earth nitride |
| US7253080B1 (en) | 2005-02-09 | 2007-08-07 | Translucent Inc. | Silicon-on-insulator semiconductor wafer |
| JP2006269688A (ja) | 2005-03-23 | 2006-10-05 | National Institute Of Advanced Industrial & Technology | 不揮発性メモリ素子 |
| WO2006101152A1 (ja) | 2005-03-23 | 2006-09-28 | National Institute Of Advanced Industrial Science And Technology | 不揮発性メモリ素子 |
| US7489073B2 (en) | 2005-04-15 | 2009-02-10 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Blue to yellow-orange emitting phosphor, and light source having such a phosphor |
| US7489541B2 (en) | 2005-08-23 | 2009-02-10 | Grandis, Inc. | Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements |
| JP2007080311A (ja) | 2005-09-12 | 2007-03-29 | Sony Corp | 記憶装置及び半導体装置 |
| JP4719035B2 (ja) | 2006-03-13 | 2011-07-06 | 株式会社東芝 | 不揮発性半導体メモリ装置及びその製造方法 |
| US7518216B2 (en) | 2006-03-20 | 2009-04-14 | Sumitomo Electric Industries, Ltd. | Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride |
| US7816737B2 (en) | 2006-03-31 | 2010-10-19 | Tokyo Electron Limited | Semiconductor device with gate dielectric containing mixed rare earth elements |
| US8012442B2 (en) | 2006-03-31 | 2011-09-06 | Tokyo Electron Limited | Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition |
| US7466585B2 (en) | 2006-04-28 | 2008-12-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic random access memory |
| JP2009539237A (ja) * | 2006-06-02 | 2009-11-12 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 新規なチタン、ジルコニウムおよびハフニウム前駆体をベースとするhigh−k誘電体フィルムを形成する方法および半導体製造におけるそれらの使用 |
| US20080079111A1 (en) * | 2006-09-29 | 2008-04-03 | Tokyo Electron Limited | Semiconductor devices containing nitrided high dielectric constant films |
| US7820552B2 (en) * | 2007-03-13 | 2010-10-26 | International Business Machines Corporation | Advanced high-k gate stack patterning and structure containing a patterned high-k gate stack |
| JP5103979B2 (ja) * | 2007-03-27 | 2012-12-19 | 豊田合成株式会社 | III族窒化物系化合物半導体に対する電極形成方法及びp型III族窒化物系化合物半導体の製造方法 |
| JP2008274342A (ja) | 2007-04-27 | 2008-11-13 | Tosoh Corp | プラズマ耐蝕性材料およびそれを含んでなる部材 |
| JP5050813B2 (ja) | 2007-11-29 | 2012-10-17 | ソニー株式会社 | メモリセル |
| WO2009074411A1 (en) | 2007-12-13 | 2009-06-18 | Crocus Technology | Magnetic memory with a thermally assisted writing procedure |
| US7920416B2 (en) | 2008-03-12 | 2011-04-05 | International Business Machines Corporation | Increased magnetic damping for toggle MRAM |
| JP5509731B2 (ja) * | 2008-08-04 | 2014-06-04 | 株式会社三徳 | 希土類窒化物およびその製造方法、ならびに磁気冷凍材料および蓄冷材料 |
| US20100109018A1 (en) | 2008-10-31 | 2010-05-06 | The Regents Of The University Of California | Method of fabricating semi-insulating gallium nitride using an aluminum gallium nitride blocking layer |
| JP5578448B2 (ja) | 2009-09-17 | 2014-08-27 | 富士電機株式会社 | 磁気抵抗素子及びそれを用いた不揮発性半導体記憶装置 |
| JP5825920B2 (ja) * | 2010-08-11 | 2015-12-02 | 太平洋セメント株式会社 | 金属窒化物の製造方法 |
| JP5988017B2 (ja) * | 2011-10-19 | 2016-09-07 | 国立研究開発法人産業技術総合研究所 | 希土類窒化物系等方性焼結磁石とその製造方法 |
| JP2013170098A (ja) * | 2012-02-21 | 2013-09-02 | Nippon Telegr & Teleph Corp <Ntt> | 遷移金属窒化物薄膜の製造方法および装置 |
| US20130251942A1 (en) * | 2012-03-23 | 2013-09-26 | Gisele Azimi | Hydrophobic Materials Incorporating Rare Earth Elements and Methods of Manufacture |
-
2015
- 2015-03-31 KR KR1020167030552A patent/KR102328525B1/ko not_active Expired - Fee Related
- 2015-03-31 EP EP15772411.3A patent/EP3127146A4/en not_active Withdrawn
- 2015-03-31 NZ NZ725495A patent/NZ725495A/en not_active IP Right Cessation
- 2015-03-31 JP JP2016560766A patent/JP6618481B2/ja not_active Expired - Fee Related
- 2015-03-31 CN CN201580024829.8A patent/CN106460229B/zh active Active
- 2015-03-31 WO PCT/NZ2015/050039 patent/WO2015152737A2/en not_active Ceased
- 2015-03-31 US US15/300,757 patent/US10415153B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87108239A (zh) * | 1986-11-29 | 1988-06-15 | Bp化学有限公司 | 碱土金属烃基酚盐及其磁化衍生物,它们的制备和应用 |
| CN1083520A (zh) * | 1992-06-27 | 1994-03-09 | 英国石油化学品(添加剂)有限公司 | 含碱土金属硫化烃基酚盐的添加剂浓缩物及其制备方法和应用 |
| CN101101947A (zh) * | 2007-07-05 | 2008-01-09 | 武汉大学 | 一种电致发光二极管的制备方法 |
| WO2013141953A2 (en) * | 2012-03-23 | 2013-09-26 | Massachusetts Institute Of Technology | Liquid-encapsulated rare-earth based ceramic surfaces |
Non-Patent Citations (1)
| Title |
|---|
| IONIC CONDUCTIVITY OF NITRIDES;S.F. PALGUEV 等;《Solid State Ionics》;19851030;第20卷;第255-258页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170005409A (ko) | 2017-01-13 |
| NZ725495A (en) | 2020-05-29 |
| US20170022632A1 (en) | 2017-01-26 |
| US10415153B2 (en) | 2019-09-17 |
| JP6618481B2 (ja) | 2019-12-11 |
| EP3127146A2 (en) | 2017-02-08 |
| WO2015152737A3 (en) | 2016-01-14 |
| JP2017511294A (ja) | 2017-04-20 |
| KR102328525B1 (ko) | 2021-11-19 |
| CN106460229A (zh) | 2017-02-22 |
| WO2015152737A2 (en) | 2015-10-08 |
| EP3127146A4 (en) | 2017-11-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6618481B2 (ja) | ドープト希土類窒化物材料および同材料を含むデバイス | |
| Norton et al. | ZnO: growth, doping & processing | |
| EP3127125B1 (en) | Magnetic materials and devices comprising rare earth nitrides | |
| Natali et al. | Epitaxial growth and properties of GdN, EuN and SmN thin films | |
| Kane et al. | Magnetic and optical properties of Ga1− x Mn x N grown by metalorganic chemical vapour deposition | |
| JP2004104070A (ja) | 強磁性半導体及び強磁性半導体素子 | |
| Hite et al. | Effect of Si Co doping on ferromagnetic properties of GaGdN | |
| US20110186948A1 (en) | Semiconductor-Based Magnetic Material | |
| Lu et al. | Molecular-beam-epitaxy growth of ferromagnetic Ni 2 MnGe on GaAs (001) | |
| US11217743B2 (en) | Rare earth nitride structures and devices and method for removing a passivating capping | |
| US10347483B2 (en) | Rare earth nitride structure or device and fabrication method | |
| Ullstad et al. | Ohmic contacts of Au and Ag metals to n-type GdN thin films | |
| Holmberg et al. | Magnetotransport properties of a room-temperature ferromagnet (ga, mn) n | |
| Majid | Neon and Manganese Ion Implantation into AlInN | |
| Arkun et al. | Evidence of Carrier Mediated Ferromagnetism in GaN: Mn/GaN: Mg Heterostructures | |
| Kane et al. | The growth and characterization of room temperature ferromagnetic wideband-gap materials for spintronic applications | |
| Hite et al. | Properties of Ferromagnetic GaGdN | |
| Melton et al. | Development of room temperature spin polarised emitters | |
| Hite et al. | Ferromagnetic Properties of GaGdN Co-Doped with Si | |
| Zuo | Transition Metal Doped Zinc Oxide as Diluted Magnetic Semiconductor | |
| Van Roy | Spin injection experiments from half-metallic ferromagnets into semiconductors: the case of NiMnSb and (Ga, Mn) As | |
| Demkov et al. | Other Epitaxial Oxides on Semiconductors | |
| Pearton et al. | GAN-BASED SPINTRONICS | |
| JP2006269510A (ja) | スピン注入源デバイス及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |