JP2020509573A5 - - Google Patents
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- Publication number
- JP2020509573A5 JP2020509573A5 JP2019530428A JP2019530428A JP2020509573A5 JP 2020509573 A5 JP2020509573 A5 JP 2020509573A5 JP 2019530428 A JP2019530428 A JP 2019530428A JP 2019530428 A JP2019530428 A JP 2019530428A JP 2020509573 A5 JP2020509573 A5 JP 2020509573A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride
- rare earth
- capping
- removable
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052761 rare earth metal Inorganic materials 0.000 claims 25
- -1 Rare earth nitride Chemical class 0.000 claims 24
- 239000000463 material Substances 0.000 claims 18
- 150000004767 nitrides Chemical class 0.000 claims 8
- 238000002161 passivation Methods 0.000 claims 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 5
- 229910052791 calcium Inorganic materials 0.000 claims 5
- 239000011575 calcium Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 229910052712 strontium Inorganic materials 0.000 claims 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 5
- 229910052693 Europium Inorganic materials 0.000 claims 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 4
- 229910052772 Samarium Inorganic materials 0.000 claims 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 4
- 229910052775 Thulium Inorganic materials 0.000 claims 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 4
- 229910052787 antimony Inorganic materials 0.000 claims 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 4
- 229910052785 arsenic Inorganic materials 0.000 claims 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 4
- XLWMYKCPNRBIDK-UHFFFAOYSA-N azanylidyneytterbium Chemical compound [Yb]#N XLWMYKCPNRBIDK-UHFFFAOYSA-N 0.000 claims 4
- 229910052797 bismuth Inorganic materials 0.000 claims 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 4
- 229910052793 cadmium Inorganic materials 0.000 claims 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 4
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 4
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims 4
- 229910052709 silver Inorganic materials 0.000 claims 4
- 239000004332 silver Substances 0.000 claims 4
- 229910052708 sodium Inorganic materials 0.000 claims 4
- 239000011734 sodium Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 4
- 229910052725 zinc Inorganic materials 0.000 claims 4
- 239000011701 zinc Substances 0.000 claims 4
- FLATXDRVRRDFBZ-UHFFFAOYSA-N azanylidynegadolinium Chemical compound [Gd]#N FLATXDRVRRDFBZ-UHFFFAOYSA-N 0.000 claims 3
- 230000008020 evaporation Effects 0.000 claims 3
- 238000001704 evaporation Methods 0.000 claims 3
- 239000011133 lead Substances 0.000 claims 3
- 238000000859 sublimation Methods 0.000 claims 3
- 230000008022 sublimation Effects 0.000 claims 3
- 229910052714 tellurium Inorganic materials 0.000 claims 3
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- IBIOTXDDKRNYMC-UHFFFAOYSA-N azanylidynedysprosium Chemical compound [Dy]#N IBIOTXDDKRNYMC-UHFFFAOYSA-N 0.000 claims 2
- VZVZYLVXLCEAMR-UHFFFAOYSA-N azanylidyneerbium Chemical compound [Er]#N VZVZYLVXLCEAMR-UHFFFAOYSA-N 0.000 claims 2
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 claims 2
- DPDGELPGCPPHSN-UHFFFAOYSA-N azanylidynelutetium Chemical compound [Lu]#N DPDGELPGCPPHSN-UHFFFAOYSA-N 0.000 claims 2
- OVMJQLNJCSIJCH-UHFFFAOYSA-N azanylidyneneodymium Chemical compound [Nd]#N OVMJQLNJCSIJCH-UHFFFAOYSA-N 0.000 claims 2
- JCWZBEIBQMTAIH-UHFFFAOYSA-N azanylidynepraseodymium Chemical compound [Pr]#N JCWZBEIBQMTAIH-UHFFFAOYSA-N 0.000 claims 2
- SZZXSKFKZJTWOY-UHFFFAOYSA-N azanylidynesamarium Chemical compound [Sm]#N SZZXSKFKZJTWOY-UHFFFAOYSA-N 0.000 claims 2
- DOHQPUDBULHKAI-UHFFFAOYSA-N azanylidyneterbium Chemical compound [Tb]#N DOHQPUDBULHKAI-UHFFFAOYSA-N 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 229910052771 Terbium Inorganic materials 0.000 claims 1
- 239000011149 active material Substances 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 229910052705 radium Inorganic materials 0.000 claims 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 claims 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP16202663 | 2016-12-07 | ||
| EP16202663.7 | 2016-12-07 | ||
| PCT/IB2017/057718 WO2018104899A1 (en) | 2016-12-07 | 2017-12-07 | Rare earth nitride structures and devices and method for removing a passivating capping |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020509573A JP2020509573A (ja) | 2020-03-26 |
| JP2020509573A5 true JP2020509573A5 (enExample) | 2021-01-21 |
| JP7131835B2 JP7131835B2 (ja) | 2022-09-06 |
Family
ID=57754927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019530428A Active JP7131835B2 (ja) | 2016-12-07 | 2017-12-07 | 希土類窒化物構造体およびデバイスならびに不動態化キャッピングを除去するための方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11217743B2 (enExample) |
| EP (1) | EP3552231A1 (enExample) |
| JP (1) | JP7131835B2 (enExample) |
| KR (1) | KR20190088556A (enExample) |
| CN (1) | CN110073477A (enExample) |
| WO (1) | WO2018104899A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019244174A2 (en) * | 2018-06-22 | 2019-12-26 | Indian Institute Of Technology Bombay | Method for fabricating germanium/silicon on insulator in radio frequency sputter system |
| CN114069389B (zh) * | 2021-11-16 | 2024-07-09 | 深圳斯玛特传感技术有限公司 | 一种量子级联激光器 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11251784A (ja) * | 1997-12-04 | 1999-09-17 | Toppan Printing Co Ltd | 電磁波遮蔽材及びその製造方法 |
| JP2003151987A (ja) * | 2001-11-19 | 2003-05-23 | Mitsubishi Heavy Ind Ltd | 半導体基板、及び、半導体基板の製造方法 |
| JP2009238415A (ja) * | 2008-03-26 | 2009-10-15 | Kobe Univ | 深紫外蛍光薄膜および深紫外蛍光薄膜を用いたランプ |
| US8445979B2 (en) | 2009-09-11 | 2013-05-21 | Samsung Electronics Co., Ltd. | Magnetic memory devices including magnetic layers separated by tunnel barriers |
| US20140335666A1 (en) * | 2013-05-13 | 2014-11-13 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics |
| CN103746009A (zh) * | 2014-01-23 | 2014-04-23 | 通用光伏能源(烟台)有限公司 | 一种太阳能电池的钝化层及其制备工艺 |
| US9139934B2 (en) * | 2014-01-23 | 2015-09-22 | Translucent, Inc. | REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate |
| KR102328525B1 (ko) | 2014-04-02 | 2021-11-19 | 프랭크 나탈리 | 도핑된 희토류 니트라이드 물질 및 이를 포함하는 장치 |
| NZ725497A (en) * | 2014-04-02 | 2020-05-29 | Franck Natali | Magnetic materials and devices comprising rare earth nitrides |
| US20160181093A1 (en) * | 2014-12-19 | 2016-06-23 | Rytis Dargis | Iii-n epitaxy on multilayer buffer with protective top layer |
| US10043871B1 (en) * | 2017-04-06 | 2018-08-07 | Ecole Polytechnique Federale De Lausanne (Epfl) | Rare earth nitride and group III-nitride structure or device |
-
2017
- 2017-12-07 JP JP2019530428A patent/JP7131835B2/ja active Active
- 2017-12-07 CN CN201780075403.4A patent/CN110073477A/zh active Pending
- 2017-12-07 EP EP17817190.6A patent/EP3552231A1/en not_active Withdrawn
- 2017-12-07 WO PCT/IB2017/057718 patent/WO2018104899A1/en not_active Ceased
- 2017-12-07 KR KR1020197019410A patent/KR20190088556A/ko not_active Ceased
- 2017-12-07 US US16/465,804 patent/US11217743B2/en not_active Expired - Fee Related
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