KR20190088556A - 희토류 질화물 구조체와 소자 및 패시베이션 캐핑 제거방법 - Google Patents

희토류 질화물 구조체와 소자 및 패시베이션 캐핑 제거방법 Download PDF

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KR20190088556A
KR20190088556A KR1020197019410A KR20197019410A KR20190088556A KR 20190088556 A KR20190088556 A KR 20190088556A KR 1020197019410 A KR1020197019410 A KR 1020197019410A KR 20197019410 A KR20197019410 A KR 20197019410A KR 20190088556 A KR20190088556 A KR 20190088556A
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South Korea
Prior art keywords
nitride
rare earth
capping
nitride material
removable
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Korean (ko)
Inventor
프랑크 나탈리
벤자민 존 럭
헤리 조셉 트로달
제이 로즈 펭 청 찬
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빅토리아 링크 엘티디
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    • H01L21/02521—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/0302—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
    • H01L21/02293—
    • H01L21/02573—
    • H01L21/02664—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)
  • Recrystallisation Techniques (AREA)
KR1020197019410A 2016-12-07 2017-12-07 희토류 질화물 구조체와 소자 및 패시베이션 캐핑 제거방법 Ceased KR20190088556A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16202663 2016-12-07
EP16202663.7 2016-12-07
PCT/IB2017/057718 WO2018104899A1 (en) 2016-12-07 2017-12-07 Rare earth nitride structures and devices and method for removing a passivating capping

Publications (1)

Publication Number Publication Date
KR20190088556A true KR20190088556A (ko) 2019-07-26

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US (1) US11217743B2 (enExample)
EP (1) EP3552231A1 (enExample)
JP (1) JP7131835B2 (enExample)
KR (1) KR20190088556A (enExample)
CN (1) CN110073477A (enExample)
WO (1) WO2018104899A1 (enExample)

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Publication number Priority date Publication date Assignee Title
WO2019244174A2 (en) * 2018-06-22 2019-12-26 Indian Institute Of Technology Bombay Method for fabricating germanium/silicon on insulator in radio frequency sputter system
CN114069389B (zh) * 2021-11-16 2024-07-09 深圳斯玛特传感技术有限公司 一种量子级联激光器

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JPH11251784A (ja) * 1997-12-04 1999-09-17 Toppan Printing Co Ltd 電磁波遮蔽材及びその製造方法
JP2003151987A (ja) * 2001-11-19 2003-05-23 Mitsubishi Heavy Ind Ltd 半導体基板、及び、半導体基板の製造方法
JP2009238415A (ja) * 2008-03-26 2009-10-15 Kobe Univ 深紫外蛍光薄膜および深紫外蛍光薄膜を用いたランプ
US8445979B2 (en) 2009-09-11 2013-05-21 Samsung Electronics Co., Ltd. Magnetic memory devices including magnetic layers separated by tunnel barriers
US20140335666A1 (en) * 2013-05-13 2014-11-13 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics
CN103746009A (zh) * 2014-01-23 2014-04-23 通用光伏能源(烟台)有限公司 一种太阳能电池的钝化层及其制备工艺
US9139934B2 (en) * 2014-01-23 2015-09-22 Translucent, Inc. REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate
KR102328525B1 (ko) 2014-04-02 2021-11-19 프랭크 나탈리 도핑된 희토류 니트라이드 물질 및 이를 포함하는 장치
NZ725497A (en) * 2014-04-02 2020-05-29 Franck Natali Magnetic materials and devices comprising rare earth nitrides
US20160181093A1 (en) * 2014-12-19 2016-06-23 Rytis Dargis Iii-n epitaxy on multilayer buffer with protective top layer
US10043871B1 (en) * 2017-04-06 2018-08-07 Ecole Polytechnique Federale De Lausanne (Epfl) Rare earth nitride and group III-nitride structure or device

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Publication number Publication date
US11217743B2 (en) 2022-01-04
WO2018104899A1 (en) 2018-06-14
JP7131835B2 (ja) 2022-09-06
JP2020509573A (ja) 2020-03-26
EP3552231A1 (en) 2019-10-16
US20200028068A1 (en) 2020-01-23
CN110073477A (zh) 2019-07-30

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