CN110073477A - 用于除去钝化盖帽层的稀土氮化物结构、器件和方法 - Google Patents

用于除去钝化盖帽层的稀土氮化物结构、器件和方法 Download PDF

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Publication number
CN110073477A
CN110073477A CN201780075403.4A CN201780075403A CN110073477A CN 110073477 A CN110073477 A CN 110073477A CN 201780075403 A CN201780075403 A CN 201780075403A CN 110073477 A CN110073477 A CN 110073477A
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CN
China
Prior art keywords
nitride
rare earth
capping layer
removable
layer
Prior art date
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Pending
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CN201780075403.4A
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English (en)
Chinese (zh)
Inventor
F·纳塔利
B·J·鲁克
H·J·特罗达尔
J·R·彭庄臣
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Victoria Union Co Ltd
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Victoria Union Co Ltd
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Publication date
Application filed by Victoria Union Co Ltd filed Critical Victoria Union Co Ltd
Publication of CN110073477A publication Critical patent/CN110073477A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/0302—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)
  • Recrystallisation Techniques (AREA)
CN201780075403.4A 2016-12-07 2017-12-07 用于除去钝化盖帽层的稀土氮化物结构、器件和方法 Pending CN110073477A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16202663 2016-12-07
EP16202663.7 2016-12-07
PCT/IB2017/057718 WO2018104899A1 (en) 2016-12-07 2017-12-07 Rare earth nitride structures and devices and method for removing a passivating capping

Publications (1)

Publication Number Publication Date
CN110073477A true CN110073477A (zh) 2019-07-30

Family

ID=57754927

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780075403.4A Pending CN110073477A (zh) 2016-12-07 2017-12-07 用于除去钝化盖帽层的稀土氮化物结构、器件和方法

Country Status (6)

Country Link
US (1) US11217743B2 (enExample)
EP (1) EP3552231A1 (enExample)
JP (1) JP7131835B2 (enExample)
KR (1) KR20190088556A (enExample)
CN (1) CN110073477A (enExample)
WO (1) WO2018104899A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114069389A (zh) * 2021-11-16 2022-02-18 深圳斯玛特传感技术有限公司 一种量子级联激光器

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019244174A2 (en) * 2018-06-22 2019-12-26 Indian Institute Of Technology Bombay Method for fabricating germanium/silicon on insulator in radio frequency sputter system

Citations (9)

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JPH11251784A (ja) * 1997-12-04 1999-09-17 Toppan Printing Co Ltd 電磁波遮蔽材及びその製造方法
JP2003151987A (ja) * 2001-11-19 2003-05-23 Mitsubishi Heavy Ind Ltd 半導体基板、及び、半導体基板の製造方法
JP2009238415A (ja) * 2008-03-26 2009-10-15 Kobe Univ 深紫外蛍光薄膜および深紫外蛍光薄膜を用いたランプ
CN103746009A (zh) * 2014-01-23 2014-04-23 通用光伏能源(烟台)有限公司 一种太阳能电池的钝化层及其制备工艺
US20140335666A1 (en) * 2013-05-13 2014-11-13 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics
US20150203990A1 (en) * 2014-01-23 2015-07-23 Rytis Dargis REN SEMICONDUCTOR LAYER EPITAXIALLY GROWN ON REAlN/REO BUFFER ON Si SUBSTRATE
WO2015152737A2 (en) * 2014-04-02 2015-10-08 Natali Franck Doped rare earth nitride materials and devices comprising same
WO2015152736A2 (en) * 2014-04-02 2015-10-08 Granville Simon Edward Magnetic materials and devices comprising rare earth nitrides
US20160181093A1 (en) * 2014-12-19 2016-06-23 Rytis Dargis Iii-n epitaxy on multilayer buffer with protective top layer

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US8445979B2 (en) 2009-09-11 2013-05-21 Samsung Electronics Co., Ltd. Magnetic memory devices including magnetic layers separated by tunnel barriers
US10043871B1 (en) * 2017-04-06 2018-08-07 Ecole Polytechnique Federale De Lausanne (Epfl) Rare earth nitride and group III-nitride structure or device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251784A (ja) * 1997-12-04 1999-09-17 Toppan Printing Co Ltd 電磁波遮蔽材及びその製造方法
JP2003151987A (ja) * 2001-11-19 2003-05-23 Mitsubishi Heavy Ind Ltd 半導体基板、及び、半導体基板の製造方法
JP2009238415A (ja) * 2008-03-26 2009-10-15 Kobe Univ 深紫外蛍光薄膜および深紫外蛍光薄膜を用いたランプ
US20140335666A1 (en) * 2013-05-13 2014-11-13 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics
CN103746009A (zh) * 2014-01-23 2014-04-23 通用光伏能源(烟台)有限公司 一种太阳能电池的钝化层及其制备工艺
US20150203990A1 (en) * 2014-01-23 2015-07-23 Rytis Dargis REN SEMICONDUCTOR LAYER EPITAXIALLY GROWN ON REAlN/REO BUFFER ON Si SUBSTRATE
WO2015152737A2 (en) * 2014-04-02 2015-10-08 Natali Franck Doped rare earth nitride materials and devices comprising same
WO2015152736A2 (en) * 2014-04-02 2015-10-08 Granville Simon Edward Magnetic materials and devices comprising rare earth nitrides
US20160181093A1 (en) * 2014-12-19 2016-06-23 Rytis Dargis Iii-n epitaxy on multilayer buffer with protective top layer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
王海波等: "(Tb,Dy)Fe_2合金表面离子注入渗氮改性及抗腐蚀性能研究", 《稀有金属》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114069389A (zh) * 2021-11-16 2022-02-18 深圳斯玛特传感技术有限公司 一种量子级联激光器

Also Published As

Publication number Publication date
US11217743B2 (en) 2022-01-04
WO2018104899A1 (en) 2018-06-14
JP7131835B2 (ja) 2022-09-06
KR20190088556A (ko) 2019-07-26
JP2020509573A (ja) 2020-03-26
EP3552231A1 (en) 2019-10-16
US20200028068A1 (en) 2020-01-23

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Application publication date: 20190730