JP7131835B2 - 希土類窒化物構造体およびデバイスならびに不動態化キャッピングを除去するための方法 - Google Patents

希土類窒化物構造体およびデバイスならびに不動態化キャッピングを除去するための方法 Download PDF

Info

Publication number
JP7131835B2
JP7131835B2 JP2019530428A JP2019530428A JP7131835B2 JP 7131835 B2 JP7131835 B2 JP 7131835B2 JP 2019530428 A JP2019530428 A JP 2019530428A JP 2019530428 A JP2019530428 A JP 2019530428A JP 7131835 B2 JP7131835 B2 JP 7131835B2
Authority
JP
Japan
Prior art keywords
nitride
rare earth
capping
removable
earth nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019530428A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020509573A (ja
JP2020509573A5 (enExample
Inventor
フランク・ナタリ
ベンジャミン・ジョン・ラック
ハリー・ジョセフ・トロダール
ジェイ・ロス・ペン・チョン・チャン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Victoria Link Ltd
Original Assignee
Victoria Link Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Victoria Link Ltd filed Critical Victoria Link Ltd
Publication of JP2020509573A publication Critical patent/JP2020509573A/ja
Publication of JP2020509573A5 publication Critical patent/JP2020509573A5/ja
Application granted granted Critical
Publication of JP7131835B2 publication Critical patent/JP7131835B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/0302—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)
  • Recrystallisation Techniques (AREA)
JP2019530428A 2016-12-07 2017-12-07 希土類窒化物構造体およびデバイスならびに不動態化キャッピングを除去するための方法 Active JP7131835B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16202663 2016-12-07
EP16202663.7 2016-12-07
PCT/IB2017/057718 WO2018104899A1 (en) 2016-12-07 2017-12-07 Rare earth nitride structures and devices and method for removing a passivating capping

Publications (3)

Publication Number Publication Date
JP2020509573A JP2020509573A (ja) 2020-03-26
JP2020509573A5 JP2020509573A5 (enExample) 2021-01-21
JP7131835B2 true JP7131835B2 (ja) 2022-09-06

Family

ID=57754927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019530428A Active JP7131835B2 (ja) 2016-12-07 2017-12-07 希土類窒化物構造体およびデバイスならびに不動態化キャッピングを除去するための方法

Country Status (6)

Country Link
US (1) US11217743B2 (enExample)
EP (1) EP3552231A1 (enExample)
JP (1) JP7131835B2 (enExample)
KR (1) KR20190088556A (enExample)
CN (1) CN110073477A (enExample)
WO (1) WO2018104899A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019244174A2 (en) * 2018-06-22 2019-12-26 Indian Institute Of Technology Bombay Method for fabricating germanium/silicon on insulator in radio frequency sputter system
CN114069389B (zh) * 2021-11-16 2024-07-09 深圳斯玛特传感技术有限公司 一种量子级联激光器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061204A (ja) 2009-09-11 2011-03-24 Samsung Electronics Co Ltd 磁気メモリ素子
WO2015152737A2 (en) 2014-04-02 2015-10-08 Natali Franck Doped rare earth nitride materials and devices comprising same
WO2015152736A2 (en) 2014-04-02 2015-10-08 Granville Simon Edward Magnetic materials and devices comprising rare earth nitrides

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251784A (ja) * 1997-12-04 1999-09-17 Toppan Printing Co Ltd 電磁波遮蔽材及びその製造方法
JP2003151987A (ja) * 2001-11-19 2003-05-23 Mitsubishi Heavy Ind Ltd 半導体基板、及び、半導体基板の製造方法
JP2009238415A (ja) * 2008-03-26 2009-10-15 Kobe Univ 深紫外蛍光薄膜および深紫外蛍光薄膜を用いたランプ
US20140335666A1 (en) * 2013-05-13 2014-11-13 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics
CN103746009A (zh) * 2014-01-23 2014-04-23 通用光伏能源(烟台)有限公司 一种太阳能电池的钝化层及其制备工艺
US9139934B2 (en) * 2014-01-23 2015-09-22 Translucent, Inc. REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate
US20160181093A1 (en) * 2014-12-19 2016-06-23 Rytis Dargis Iii-n epitaxy on multilayer buffer with protective top layer
US10043871B1 (en) * 2017-04-06 2018-08-07 Ecole Polytechnique Federale De Lausanne (Epfl) Rare earth nitride and group III-nitride structure or device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061204A (ja) 2009-09-11 2011-03-24 Samsung Electronics Co Ltd 磁気メモリ素子
WO2015152737A2 (en) 2014-04-02 2015-10-08 Natali Franck Doped rare earth nitride materials and devices comprising same
WO2015152736A2 (en) 2014-04-02 2015-10-08 Granville Simon Edward Magnetic materials and devices comprising rare earth nitrides
JP2017511294A (ja) 2014-04-02 2017-04-20 フランク ナタリ ドープト希土類窒化物材料および同材料を含むデバイス
JP2017513231A (ja) 2014-04-02 2017-05-25 サイモン エドワード グランビル 希土類窒化物を含む磁性材料およびデバイス

Also Published As

Publication number Publication date
US11217743B2 (en) 2022-01-04
WO2018104899A1 (en) 2018-06-14
KR20190088556A (ko) 2019-07-26
JP2020509573A (ja) 2020-03-26
EP3552231A1 (en) 2019-10-16
US20200028068A1 (en) 2020-01-23
CN110073477A (zh) 2019-07-30

Similar Documents

Publication Publication Date Title
EP3127125B1 (en) Magnetic materials and devices comprising rare earth nitrides
CN106460229B (zh) 掺杂的稀土氮化物材料和包含其的器件
EP2246458B1 (en) Thin film of aluminum nitride and process for producing the thin film of aluminum nitride
US11217743B2 (en) Rare earth nitride structures and devices and method for removing a passivating capping
Suzuki et al. Effect of He buffer gas on pulsed Nd: YAG laser deposition of Eu x Y2–x O3 phosphor thin films
US6869806B2 (en) Method and apparatus for the production of a semiconductor compatible ferromagnetic film
Koinuma et al. Laser MBE for atomically defined ceramic film growth
Leca et al. Termination control of NdGaO3 crystal surfaces by selective chemical etching
Hassan et al. Epitaxial Growth and Magnetic Properties of Half-Metallic Fe $ _ {3} $ O $ _ {4} $ on Si (100) Using MgO Buffer Layer
US10347483B2 (en) Rare earth nitride structure or device and fabrication method
US10043871B1 (en) Rare earth nitride and group III-nitride structure or device
Majid Neon and Manganese Ion Implantation into AlInN
US20240242964A1 (en) Crystalline strontium titanate (sto) and method for deposition of the sto on a substrate
Wan et al. Near-single-domain superconducting aluminum films on GaAs (111) A with exceptional crystalline quality for scalable quantum circuits
Stewart Growth and characterization of novel thin films on Gallium-V semiconductors for enhanced functionality
Habermeier Complex Oxide Interfaces: A Path to Design New Materials
Kaspar Materials and magnetic studies of cobalt-doped anatase titanium dioxide and perovskite strontium titanate as potential dilute magnetic semiconductors
Lukose Liquid-delivery metal-organic chemical vapour deposition of perovskites and perovskite-like compounds
Hotel October 8-11, 2006, Jolly Hotel, Ischia, Italy

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201204

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201204

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220118

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220408

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220809

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220818

R150 Certificate of patent or registration of utility model

Ref document number: 7131835

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150