JP2017508833A5 - - Google Patents

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Publication number
JP2017508833A5
JP2017508833A5 JP2016549507A JP2016549507A JP2017508833A5 JP 2017508833 A5 JP2017508833 A5 JP 2017508833A5 JP 2016549507 A JP2016549507 A JP 2016549507A JP 2016549507 A JP2016549507 A JP 2016549507A JP 2017508833 A5 JP2017508833 A5 JP 2017508833A5
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JP
Japan
Prior art keywords
composition according
cmp composition
poly
particles
cmp
Prior art date
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Pending
Application number
JP2016549507A
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English (en)
Japanese (ja)
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JP2017508833A (ja
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Publication date
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Priority claimed from PCT/IB2015/050454 external-priority patent/WO2015114489A1/en
Publication of JP2017508833A publication Critical patent/JP2017508833A/ja
Publication of JP2017508833A5 publication Critical patent/JP2017508833A5/ja
Pending legal-status Critical Current

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JP2016549507A 2014-01-31 2015-01-21 ポリ(アミノ酸)を含む化学機械研磨(cmp)組成物 Pending JP2017508833A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14153454.5 2014-01-31
EP14153454 2014-01-31
PCT/IB2015/050454 WO2015114489A1 (en) 2014-01-31 2015-01-21 A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid)

Publications (2)

Publication Number Publication Date
JP2017508833A JP2017508833A (ja) 2017-03-30
JP2017508833A5 true JP2017508833A5 (enExample) 2018-03-01

Family

ID=50030116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016549507A Pending JP2017508833A (ja) 2014-01-31 2015-01-21 ポリ(アミノ酸)を含む化学機械研磨(cmp)組成物

Country Status (9)

Country Link
US (1) US20170166778A1 (enExample)
EP (1) EP3099756A4 (enExample)
JP (1) JP2017508833A (enExample)
KR (1) KR20160114709A (enExample)
CN (1) CN105934487B (enExample)
IL (1) IL246916A0 (enExample)
SG (1) SG11201606157VA (enExample)
TW (1) TW201538700A (enExample)
WO (1) WO2015114489A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6627283B2 (ja) * 2015-06-30 2020-01-08 日立化成株式会社 研磨液及び研磨方法
CN108779367B (zh) * 2016-03-22 2021-02-02 巴斯夫欧洲公司 化学机械抛光(cmp)组合物在抛光包含钴和/或钴合金的基材中的用途
JP6957265B2 (ja) * 2016-09-29 2021-11-02 花王株式会社 研磨液組成物
WO2019055749A1 (en) 2017-09-15 2019-03-21 Cabot Microelectronics Corporation COMPOSITION FOR THE CHEMICAL MECHANICAL POLISHING (CMP) OF TUNGSTEN
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
JP7045171B2 (ja) * 2017-11-28 2022-03-31 花王株式会社 研磨液組成物
CN109971357B (zh) * 2017-12-27 2021-12-07 安集微电子(上海)有限公司 一种化学机械抛光液
CN108913038A (zh) * 2018-06-27 2018-11-30 东莞市金林自动化机械科技有限公司 一种用于金的抛光液及其制备方法
TWI764338B (zh) * 2019-10-22 2022-05-11 美商Cmc材料股份有限公司 用於氧化矽和碳摻雜之氧化矽化學機械拋光的組合物及方法
CN114599751A (zh) * 2019-10-22 2022-06-07 Cmc材料股份有限公司 用于介电质化学机械抛光的组合物及方法
KR102859110B1 (ko) * 2020-01-07 2025-09-12 씨엠씨 머티리얼즈 엘엘씨 유도체화된 폴리아미노산
KR102866377B1 (ko) * 2022-01-28 2025-09-29 삼성에스디아이 주식회사 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 구리 막 연마 방법

Family Cites Families (20)

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JP2000109810A (ja) * 1998-10-08 2000-04-18 Hitachi Chem Co Ltd Cmp研磨剤及び基板の研磨方法
JP4744656B2 (ja) * 1998-10-08 2011-08-10 日立化成工業株式会社 Cmp研磨剤及び基板の研磨方法
US6319096B1 (en) * 1999-11-15 2001-11-20 Cabot Corporation Composition and method for planarizing surfaces
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
US7279119B2 (en) * 2001-06-14 2007-10-09 Ppg Industries Ohio, Inc. Silica and silica-based slurry
US20030211747A1 (en) * 2001-09-13 2003-11-13 Nyacol Nano Technologies, Inc Shallow trench isolation polishing using mixed abrasive slurries
KR100511943B1 (ko) * 2003-05-22 2005-09-01 한화석유화학 주식회사 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법
KR100637772B1 (ko) * 2004-06-25 2006-10-23 제일모직주식회사 반도체 sti 공정용 고선택비 cmp 슬러리 조성물
KR100548132B1 (ko) * 2004-07-02 2006-02-02 삼성전자주식회사 멀티밴드-호핑 통신시스템에서 수신기의 dc 오프셋보정장치 및 방법
CN102965025B (zh) * 2005-11-11 2014-10-29 日立化成株式会社 氧化硅用研磨剂、其用途以及研磨方法
WO2007130350A1 (en) * 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
JP2008277723A (ja) * 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
CN101463227B (zh) * 2007-12-21 2013-06-12 安集微电子(上海)有限公司 一种用于阻挡层抛光的化学机械抛光液
JPWO2009119485A1 (ja) * 2008-03-28 2011-07-21 日立化成工業株式会社 金属用研磨液及びこの研磨液を用いた研磨方法
TWI546373B (zh) * 2008-04-23 2016-08-21 日立化成股份有限公司 研磨劑及其製造方法、基板研磨方法以及研磨劑套組及其製造方法
KR101548756B1 (ko) * 2008-06-11 2015-08-31 신에쓰 가가꾸 고교 가부시끼가이샤 합성 석영 유리 기판용 연마제
CN102268224B (zh) * 2010-06-01 2013-12-04 中国科学院上海微系统与信息技术研究所 可控氧化硅去除速率的化学机械抛光液
JP5965907B2 (ja) * 2010-09-08 2016-08-10 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 電気機器や機械機器・光学機器用の基板の化学機械研磨用の水性研磨組成物と方法
JP5333571B2 (ja) * 2010-12-24 2013-11-06 日立化成株式会社 研磨液及びこの研磨液を用いた基板の研磨方法
EP2753670B1 (en) * 2011-09-07 2016-06-22 Basf Se A chemical mechanical polishing (cmp) composition comprising a glycoside

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