TW201538700A - 包含多胺基酸之化學機械拋光（ｃｍｐ）組成物 - Google Patents

包含多胺基酸之化學機械拋光（ｃｍｐ）組成物 Download PDF

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Publication number
TW201538700A
TW201538700A TW104102942A TW104102942A TW201538700A TW 201538700 A TW201538700 A TW 201538700A TW 104102942 A TW104102942 A TW 104102942A TW 104102942 A TW104102942 A TW 104102942A TW 201538700 A TW201538700 A TW 201538700A
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TW
Taiwan
Prior art keywords
cmp
acid
cmp composition
particles
composition according
Prior art date
Application number
TW104102942A
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English (en)
Chinese (zh)
Inventor
米夏埃爾 勞特
羅蘭 朗格
巴斯提昂 瑪登 諾勒
馬克斯 席伯特
Original Assignee
巴斯夫歐洲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 巴斯夫歐洲公司 filed Critical 巴斯夫歐洲公司
Publication of TW201538700A publication Critical patent/TW201538700A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H10P95/062—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H10W10/014—
    • H10W10/17—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW104102942A 2014-01-31 2015-01-29 包含多胺基酸之化學機械拋光（ｃｍｐ）組成物 TW201538700A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP14153454 2014-01-31

Publications (1)

Publication Number Publication Date
TW201538700A true TW201538700A (zh) 2015-10-16

Family

ID=50030116

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104102942A TW201538700A (zh) 2014-01-31 2015-01-29 包含多胺基酸之化學機械拋光（ｃｍｐ）組成物

Country Status (9)

Country Link
US (1) US20170166778A1 (enExample)
EP (1) EP3099756A4 (enExample)
JP (1) JP2017508833A (enExample)
KR (1) KR20160114709A (enExample)
CN (1) CN105934487B (enExample)
IL (1) IL246916A0 (enExample)
SG (1) SG11201606157VA (enExample)
TW (1) TW201538700A (enExample)
WO (1) WO2015114489A1 (enExample)

Cited By (2)

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TWI737697B (zh) * 2016-03-22 2021-09-01 德商巴斯夫歐洲公司 化學機械研磨（cmp）組成物用於研磨含鈷及/或鈷合金之基板的用途，化學機械研磨（cmp）組成物，及製造半導體裝置之方法
TWI793158B (zh) * 2017-09-28 2023-02-21 美商羅門哈斯電子材料Ｃｍｐ控股公司 用於淺溝槽隔離之水性二氧化矽漿料及胺羧酸組合物及其使用方法

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JP6627283B2 (ja) * 2015-06-30 2020-01-08 日立化成株式会社 研磨液及び研磨方法
JP6957265B2 (ja) * 2016-09-29 2021-11-02 花王株式会社 研磨液組成物
CN111094481A (zh) * 2017-09-15 2020-05-01 嘉柏微电子材料股份公司 用于钨化学机械抛光的组合物
JP7045171B2 (ja) * 2017-11-28 2022-03-31 花王株式会社 研磨液組成物
CN109971357B (zh) * 2017-12-27 2021-12-07 安集微电子（上海）有限公司 一种化学机械抛光液
CN108913038A (zh) * 2018-06-27 2018-11-30 东莞市金林自动化机械科技有限公司 一种用于金的抛光液及其制备方法
JP7757279B2 (ja) * 2019-10-22 2025-10-21 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー 誘電体ｃｍｐのための組成物及び方法
WO2021141741A1 (en) * 2020-01-07 2021-07-15 Cmc Materials, Inc. Derivatized polyamino acids
KR102866377B1 (ko) * 2022-01-28 2025-09-29 삼성에스디아이 주식회사 구리 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법

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JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
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KR100548132B1 (ko) * 2004-07-02 2006-02-02 삼성전자주식회사 멀티밴드-호핑 통신시스템에서 수신기의 ｄｃ 오프셋보정장치 및 방법
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI737697B (zh) * 2016-03-22 2021-09-01 德商巴斯夫歐洲公司 化學機械研磨（cmp）組成物用於研磨含鈷及/或鈷合金之基板的用途，化學機械研磨（cmp）組成物，及製造半導體裝置之方法
TWI793158B (zh) * 2017-09-28 2023-02-21 美商羅門哈斯電子材料Ｃｍｐ控股公司 用於淺溝槽隔離之水性二氧化矽漿料及胺羧酸組合物及其使用方法

Also Published As

Publication number Publication date
CN105934487B (zh) 2018-10-26
KR20160114709A (ko) 2016-10-05
EP3099756A1 (en) 2016-12-07
WO2015114489A1 (en) 2015-08-06
IL246916A0 (en) 2016-09-29
CN105934487A (zh) 2016-09-07
US20170166778A1 (en) 2017-06-15
JP2017508833A (ja) 2017-03-30
SG11201606157VA (en) 2016-08-30
EP3099756A4 (en) 2017-08-02

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