TW201538700A - 包含多胺基酸之化學機械拋光（ｃｍｐ）組成物 - Google Patents

包含多胺基酸之化學機械拋光（ｃｍｐ）組成物 Download PDF

Info

Publication number
TW201538700A
TW201538700A TW104102942A TW104102942A TW201538700A TW 201538700 A TW201538700 A TW 201538700A TW 104102942 A TW104102942 A TW 104102942A TW 104102942 A TW104102942 A TW 104102942A TW 201538700 A TW201538700 A TW 201538700A
Authority
TW
Taiwan
Prior art keywords
cmp
acid
cmp composition
particles
composition according
Prior art date
Application number
TW104102942A
Other languages
English (en)
Chinese (zh)
Inventor
米夏埃爾 勞特
羅蘭 朗格
巴斯提昂 瑪登 諾勒
馬克斯 席伯特
Original Assignee
巴斯夫歐洲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 巴斯夫歐洲公司 filed Critical 巴斯夫歐洲公司
Publication of TW201538700A publication Critical patent/TW201538700A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H10P52/403—
    • H10P95/062—
    • H10P95/064—
    • H10W10/014—
    • H10W10/17—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW104102942A 2014-01-31 2015-01-29 包含多胺基酸之化學機械拋光（ｃｍｐ）組成物 TW201538700A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP14153454 2014-01-31

Publications (1)

Publication Number Publication Date
TW201538700A true TW201538700A (zh) 2015-10-16

Family

ID=50030116

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104102942A TW201538700A (zh) 2014-01-31 2015-01-29 包含多胺基酸之化學機械拋光（ｃｍｐ）組成物

Country Status (9)

Country Link
US (1) US20170166778A1 (enExample)
EP (1) EP3099756A4 (enExample)
JP (1) JP2017508833A (enExample)
KR (1) KR20160114709A (enExample)
CN (1) CN105934487B (enExample)
IL (1) IL246916A0 (enExample)
SG (1) SG11201606157VA (enExample)
TW (1) TW201538700A (enExample)
WO (1) WO2015114489A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI737697B (zh) * 2016-03-22 2021-09-01 德商巴斯夫歐洲公司 化學機械研磨（cmp）組成物用於研磨含鈷及/或鈷合金之基板的用途，化學機械研磨（cmp）組成物，及製造半導體裝置之方法
TWI793158B (zh) * 2017-09-28 2023-02-21 美商羅門哈斯電子材料Ｃｍｐ控股公司 用於淺溝槽隔離之水性二氧化矽漿料及胺羧酸組合物及其使用方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6627283B2 (ja) * 2015-06-30 2020-01-08 日立化成株式会社 研磨液及び研磨方法
JP6957265B2 (ja) * 2016-09-29 2021-11-02 花王株式会社 研磨液組成物
KR102662567B1 (ko) 2017-09-15 2024-05-16 씨엠씨 머티리얼즈 엘엘씨 텅스텐 cmp용 조성물
JP7045171B2 (ja) * 2017-11-28 2022-03-31 花王株式会社 研磨液組成物
CN109971357B (zh) * 2017-12-27 2021-12-07 安集微电子（上海）有限公司 一种化学机械抛光液
CN108913038A (zh) * 2018-06-27 2018-11-30 东莞市金林自动化机械科技有限公司 一种用于金的抛光液及其制备方法
CN114599750A (zh) * 2019-10-22 2022-06-07 Cmc材料股份有限公司 用于硅氧化物和碳掺杂的硅氧化物的化学机械抛光的组合物及方法
CN114616300A (zh) * 2019-10-22 2022-06-10 Cmc材料股份有限公司 用于介电质化学机械抛光的组合物及方法
KR102859110B1 (ko) * 2020-01-07 2025-09-12 씨엠씨 머티리얼즈 엘엘씨 유도체화된 폴리아미노산
KR102866377B1 (ko) * 2022-01-28 2025-09-29 삼성에스디아이 주식회사 구리 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000109810A (ja) * 1998-10-08 2000-04-18 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP4744656B2 (ja) * 1998-10-08 2011-08-10 日立化成工業株式会社 Ｃｍｐ研磨剤及び基板の研磨方法
US6319096B1 (en) * 1999-11-15 2001-11-20 Cabot Corporation Composition and method for planarizing surfaces
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
US7279119B2 (en) * 2001-06-14 2007-10-09 Ppg Industries Ohio, Inc. Silica and silica-based slurry
US20030211747A1 (en) * 2001-09-13 2003-11-13 Nyacol Nano Technologies, Inc Shallow trench isolation polishing using mixed abrasive slurries
KR100511943B1 (ko) * 2003-05-22 2005-09-01 한화석유화학 주식회사 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법
KR100637772B1 (ko) * 2004-06-25 2006-10-23 제일모직주식회사 반도체 ｓｔｉ 공정용 고선택비 ｃｍｐ 슬러리 조성물
KR100548132B1 (ko) * 2004-07-02 2006-02-02 삼성전자주식회사 멀티밴드-호핑 통신시스템에서 수신기의 ｄｃ 오프셋보정장치 및 방법
KR101260621B1 (ko) * 2005-11-11 2013-05-03 히타치가세이가부시끼가이샤 산화규소용 연마제, 첨가액 및 연마 방법
CN101437918B (zh) * 2006-05-02 2012-11-21 卡伯特微电子公司 用于半导体材料的化学机械抛光的组合物及方法
JP2008277723A (ja) * 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
CN101463227B (zh) * 2007-12-21 2013-06-12 安集微电子（上海）有限公司 一种用于阻挡层抛光的化学机械抛光液
JPWO2009119485A1 (ja) * 2008-03-28 2011-07-21 日立化成工業株式会社 金属用研磨液及びこの研磨液を用いた研磨方法
CN105368397B (zh) * 2008-04-23 2017-11-03 日立化成株式会社 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法
MY155533A (en) * 2008-06-11 2015-10-30 Shinetsu Chemical Co Polishing agent for synthetic quartz glass substrate
CN102268224B (zh) * 2010-06-01 2013-12-04 中国科学院上海微系统与信息技术研究所 可控氧化硅去除速率的化学机械抛光液
RU2607214C2 (ru) * 2010-09-08 2017-01-10 Басф Се Водная полирующая композиция и способ химико-механического полирования подложек для электрических, механических и оптических устройств
KR101886464B1 (ko) * 2010-12-24 2018-08-07 히타치가세이가부시끼가이샤 연마액 및 이 연마액을 이용한 기판의 연마 방법
CN103764775B (zh) * 2011-09-07 2016-05-18 巴斯夫欧洲公司 包含苷的化学机械抛光(cmp)组合物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI737697B (zh) * 2016-03-22 2021-09-01 德商巴斯夫歐洲公司 化學機械研磨（cmp）組成物用於研磨含鈷及/或鈷合金之基板的用途，化學機械研磨（cmp）組成物，及製造半導體裝置之方法
TWI793158B (zh) * 2017-09-28 2023-02-21 美商羅門哈斯電子材料Ｃｍｐ控股公司 用於淺溝槽隔離之水性二氧化矽漿料及胺羧酸組合物及其使用方法

Also Published As

Publication number Publication date
SG11201606157VA (en) 2016-08-30
EP3099756A1 (en) 2016-12-07
JP2017508833A (ja) 2017-03-30
EP3099756A4 (en) 2017-08-02
WO2015114489A1 (en) 2015-08-06
KR20160114709A (ko) 2016-10-05
CN105934487A (zh) 2016-09-07
IL246916A0 (en) 2016-09-29
CN105934487B (zh) 2018-10-26
US20170166778A1 (en) 2017-06-15

Similar Documents

Publication Publication Date Title
CN105934487B (zh) 包含聚氨基酸的化学机械抛光(cmp)组合物
TWI573864B (zh) 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
KR102239037B1 (ko) 높은 제거율 및 낮은 결함성으로 산화물 및 질화물에 대해 선택적인 cmp 조성물
KR102501836B1 (ko) 화학 기계적 연마 (cmp) 조성물
TWI606102B (zh) 包含蛋白質之化學機械拋光組合物
TWI570227B (zh) 一種製造半導體裝置的方法，其包括在含陰離子性磷酸鹽或膦酸鹽之ｃｍｐ組合物存在下化學機械拋光硼磷矽酸鹽玻璃（ｂｐｓｇ）材料
JP2018534379A (ja) 改善された安定性及び改善された研磨特性を有する、選択的窒化物スラリー
CN107001860A (zh) 在浅沟槽隔离晶片的抛光中展现出减小的凹陷的化学机械抛光组合物
JP2020500419A (ja) 改善されたディッシングおよびパターン選択性を有する酸化物および窒化物選択性のｃｍｐ組成物
JP6595510B2 (ja) 高い除去速度と低欠陥性を有する、ポリシリコン及び窒化物を上回り酸化物に対して選択的なｃｍｐ組成物
TW202024291A (zh) 化學機械拋光含銅和釕的基材
TWI700358B (zh) 用於高效率拋光含鍺基材的化學機械拋光（ｃｍｐ）組成物