TW201538700A - 包含多胺基酸之化學機械拋光（ｃｍｐ）組成物 - Google Patents

包含多胺基酸之化學機械拋光（ｃｍｐ）組成物 Download PDF

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Publication number
TW201538700A
TW201538700A TW104102942A TW104102942A TW201538700A TW 201538700 A TW201538700 A TW 201538700A TW 104102942 A TW104102942 A TW 104102942A TW 104102942 A TW104102942 A TW 104102942A TW 201538700 A TW201538700 A TW 201538700A
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TW
Taiwan
Prior art keywords
cmp
acid
cmp composition
particles
composition according
Prior art date
Application number
TW104102942A
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English (en)
Chinese (zh)
Inventor
米夏埃爾 勞特
羅蘭 朗格
巴斯提昂 瑪登 諾勒
馬克斯 席伯特
Original Assignee
巴斯夫歐洲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 巴斯夫歐洲公司 filed Critical 巴斯夫歐洲公司
Publication of TW201538700A publication Critical patent/TW201538700A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW104102942A 2014-01-31 2015-01-29 包含多胺基酸之化學機械拋光（ｃｍｐ）組成物 TW201538700A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP14153454 2014-01-31

Publications (1)

Publication Number Publication Date
TW201538700A true TW201538700A (zh) 2015-10-16

Family

ID=50030116

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104102942A TW201538700A (zh) 2014-01-31 2015-01-29 包含多胺基酸之化學機械拋光（ｃｍｐ）組成物

Country Status (9)

Country Link
US (1) US20170166778A1 (enExample)
EP (1) EP3099756A4 (enExample)
JP (1) JP2017508833A (enExample)
KR (1) KR20160114709A (enExample)
CN (1) CN105934487B (enExample)
IL (1) IL246916A0 (enExample)
SG (1) SG11201606157VA (enExample)
TW (1) TW201538700A (enExample)
WO (1) WO2015114489A1 (enExample)

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TWI737697B (zh) * 2016-03-22 2021-09-01 德商巴斯夫歐洲公司 化學機械研磨（cmp）組成物用於研磨含鈷及/或鈷合金之基板的用途，化學機械研磨（cmp）組成物，及製造半導體裝置之方法
TWI793158B (zh) * 2017-09-28 2023-02-21 美商羅門哈斯電子材料Ｃｍｐ控股公司 用於淺溝槽隔離之水性二氧化矽漿料及胺羧酸組合物及其使用方法

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JP6627283B2 (ja) * 2015-06-30 2020-01-08 日立化成株式会社 研磨液及び研磨方法
JP6957265B2 (ja) * 2016-09-29 2021-11-02 花王株式会社 研磨液組成物
WO2019055749A1 (en) 2017-09-15 2019-03-21 Cabot Microelectronics Corporation COMPOSITION FOR THE CHEMICAL MECHANICAL POLISHING (CMP) OF TUNGSTEN
JP7045171B2 (ja) * 2017-11-28 2022-03-31 花王株式会社 研磨液組成物
CN109971357B (zh) * 2017-12-27 2021-12-07 安集微电子（上海）有限公司 一种化学机械抛光液
CN108913038A (zh) * 2018-06-27 2018-11-30 东莞市金林自动化机械科技有限公司 一种用于金的抛光液及其制备方法
TWI764338B (zh) * 2019-10-22 2022-05-11 美商Ｃｍｃ材料股份有限公司 用於氧化矽和碳摻雜之氧化矽化學機械拋光的組合物及方法
CN114599751A (zh) * 2019-10-22 2022-06-07 Cmc材料股份有限公司 用于介电质化学机械抛光的组合物及方法
KR102859110B1 (ko) * 2020-01-07 2025-09-12 씨엠씨 머티리얼즈 엘엘씨 유도체화된 폴리아미노산
KR102866377B1 (ko) * 2022-01-28 2025-09-29 삼성에스디아이 주식회사 구리 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법

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JP5965907B2 (ja) * 2010-09-08 2016-08-10 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 電気機器や機械機器・光学機器用の基板の化学機械研磨用の水性研磨組成物と方法
JP5333571B2 (ja) * 2010-12-24 2013-11-06 日立化成株式会社 研磨液及びこの研磨液を用いた基板の研磨方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI737697B (zh) * 2016-03-22 2021-09-01 德商巴斯夫歐洲公司 化學機械研磨（cmp）組成物用於研磨含鈷及/或鈷合金之基板的用途，化學機械研磨（cmp）組成物，及製造半導體裝置之方法
TWI793158B (zh) * 2017-09-28 2023-02-21 美商羅門哈斯電子材料Ｃｍｐ控股公司 用於淺溝槽隔離之水性二氧化矽漿料及胺羧酸組合物及其使用方法

Also Published As

Publication number Publication date
CN105934487B (zh) 2018-10-26
EP3099756A4 (en) 2017-08-02
SG11201606157VA (en) 2016-08-30
CN105934487A (zh) 2016-09-07
JP2017508833A (ja) 2017-03-30
US20170166778A1 (en) 2017-06-15
EP3099756A1 (en) 2016-12-07
KR20160114709A (ko) 2016-10-05
IL246916A0 (en) 2016-09-29
WO2015114489A1 (en) 2015-08-06

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