CN105934487B - 包含聚氨基酸的化学机械抛光(cmp)组合物 - Google Patents

包含聚氨基酸的化学机械抛光(cmp)组合物 Download PDF

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Publication number
CN105934487B
CN105934487B CN201580005687.0A CN201580005687A CN105934487B CN 105934487 B CN105934487 B CN 105934487B CN 201580005687 A CN201580005687 A CN 201580005687A CN 105934487 B CN105934487 B CN 105934487B
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China
Prior art keywords
cmp
composition
polyaminoacid
cmp composition
salt
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Expired - Fee Related
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CN201580005687.0A
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English (en)
Chinese (zh)
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CN105934487A (zh
Inventor
M·劳特尔
R·朗格
B·M·诺勒
M·希伯特
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BASF SE
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201580005687.0A 2014-01-31 2015-01-21 包含聚氨基酸的化学机械抛光(cmp)组合物 Expired - Fee Related CN105934487B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14153454.5 2014-01-31
EP14153454 2014-01-31
PCT/IB2015/050454 WO2015114489A1 (en) 2014-01-31 2015-01-21 A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid)

Publications (2)

Publication Number Publication Date
CN105934487A CN105934487A (zh) 2016-09-07
CN105934487B true CN105934487B (zh) 2018-10-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580005687.0A Expired - Fee Related CN105934487B (zh) 2014-01-31 2015-01-21 包含聚氨基酸的化学机械抛光(cmp)组合物

Country Status (9)

Country Link
US (1) US20170166778A1 (enExample)
EP (1) EP3099756A4 (enExample)
JP (1) JP2017508833A (enExample)
KR (1) KR20160114709A (enExample)
CN (1) CN105934487B (enExample)
IL (1) IL246916A0 (enExample)
SG (1) SG11201606157VA (enExample)
TW (1) TW201538700A (enExample)
WO (1) WO2015114489A1 (enExample)

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JP6627283B2 (ja) * 2015-06-30 2020-01-08 日立化成株式会社 研磨液及び研磨方法
SG11201807364VA (en) * 2016-03-22 2018-10-30 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates
JP6957265B2 (ja) * 2016-09-29 2021-11-02 花王株式会社 研磨液組成物
US12473457B2 (en) 2017-09-15 2025-11-18 Cmc Materials Llc Composition for tungsten CMP
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
JP7045171B2 (ja) * 2017-11-28 2022-03-31 花王株式会社 研磨液組成物
CN109971357B (zh) * 2017-12-27 2021-12-07 安集微电子（上海）有限公司 一种化学机械抛光液
CN108913038A (zh) * 2018-06-27 2018-11-30 东莞市金林自动化机械科技有限公司 一种用于金的抛光液及其制备方法
KR20220090534A (ko) * 2019-10-22 2022-06-29 씨엠씨 머티리얼즈, 인코포레이티드 유전체 cmp를 위한 조성물 및 방법
JP2022553346A (ja) * 2019-10-22 2022-12-22 シーエムシー マテリアルズ，インコーポレイティド 酸化ケイ素及び炭素ドープ酸化ケイ素ｃｍｐのための組成物並びに方法
WO2021141741A1 (en) * 2020-01-07 2021-07-15 Cmc Materials, Inc. Derivatized polyamino acids
KR102866377B1 (ko) * 2022-01-28 2025-09-29 삼성에스디아이 주식회사 구리 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법

Citations (4)

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WO2006001558A1 (en) * 2004-06-25 2006-01-05 Cheil Industires Inc. High selectivity cmp slurry composition for sti process in semiconductor manufacture
CN101463227A (zh) * 2007-12-21 2009-06-24 安集微电子（上海）有限公司 一种用于阻挡层抛光的化学机械抛光液
WO2013035034A1 (en) * 2011-09-07 2013-03-14 Basf Se A chemical mechanical polishing (cmp) composition comprising a glycoside
CN103155112A (zh) * 2010-12-24 2013-06-12 日立化成株式会社 研磨液及使用该研磨液的基板的研磨方法

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JP4744656B2 (ja) * 1998-10-08 2011-08-10 日立化成工業株式会社 Ｃｍｐ研磨剤及び基板の研磨方法
US6319096B1 (en) * 1999-11-15 2001-11-20 Cabot Corporation Composition and method for planarizing surfaces
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
US7279119B2 (en) * 2001-06-14 2007-10-09 Ppg Industries Ohio, Inc. Silica and silica-based slurry
US20030211747A1 (en) * 2001-09-13 2003-11-13 Nyacol Nano Technologies, Inc Shallow trench isolation polishing using mixed abrasive slurries
KR100511943B1 (ko) * 2003-05-22 2005-09-01 한화석유화학 주식회사 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법
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WO2009150938A1 (ja) * 2008-06-11 2009-12-17 信越化学工業株式会社 合成石英ガラス基板用研磨剤
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WO2006001558A1 (en) * 2004-06-25 2006-01-05 Cheil Industires Inc. High selectivity cmp slurry composition for sti process in semiconductor manufacture
CN101463227A (zh) * 2007-12-21 2009-06-24 安集微电子（上海）有限公司 一种用于阻挡层抛光的化学机械抛光液
CN103155112A (zh) * 2010-12-24 2013-06-12 日立化成株式会社 研磨液及使用该研磨液的基板的研磨方法
WO2013035034A1 (en) * 2011-09-07 2013-03-14 Basf Se A chemical mechanical polishing (cmp) composition comprising a glycoside

Also Published As

Publication number Publication date
CN105934487A (zh) 2016-09-07
JP2017508833A (ja) 2017-03-30
SG11201606157VA (en) 2016-08-30
TW201538700A (zh) 2015-10-16
KR20160114709A (ko) 2016-10-05
IL246916A0 (en) 2016-09-29
EP3099756A4 (en) 2017-08-02
EP3099756A1 (en) 2016-12-07
US20170166778A1 (en) 2017-06-15
WO2015114489A1 (en) 2015-08-06

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