SG11201606157VA - A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid) - Google Patents

A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid)

Info

Publication number
SG11201606157VA
SG11201606157VA SG11201606157VA SG11201606157VA SG11201606157VA SG 11201606157V A SG11201606157V A SG 11201606157VA SG 11201606157V A SG11201606157V A SG 11201606157VA SG 11201606157V A SG11201606157V A SG 11201606157VA SG 11201606157V A SG11201606157V A SG 11201606157VA
Authority
SG
Singapore
Prior art keywords
aminoacid
cmp
poly
composition
mechanical polishing
Prior art date
Application number
SG11201606157VA
Inventor
Michael Lauter
Roland Lange
Bastian Marten Noller
Max Siebert
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201606157VA publication Critical patent/SG11201606157VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201606157VA 2014-01-31 2015-01-21 A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid) SG11201606157VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14153454 2014-01-31
PCT/IB2015/050454 WO2015114489A1 (en) 2014-01-31 2015-01-21 A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid)

Publications (1)

Publication Number Publication Date
SG11201606157VA true SG11201606157VA (en) 2016-08-30

Family

ID=50030116

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606157VA SG11201606157VA (en) 2014-01-31 2015-01-21 A chemical mechanical polishing (cmp) composition comprising a poly(aminoacid)

Country Status (9)

Country Link
US (1) US20170166778A1 (en)
EP (1) EP3099756A4 (en)
JP (1) JP2017508833A (en)
KR (1) KR20160114709A (en)
CN (1) CN105934487B (en)
IL (1) IL246916A0 (en)
SG (1) SG11201606157VA (en)
TW (1) TW201538700A (en)
WO (1) WO2015114489A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
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JP6627283B2 (en) * 2015-06-30 2020-01-08 日立化成株式会社 Polishing liquid and polishing method
WO2017162462A1 (en) * 2016-03-22 2017-09-28 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates
JP6957265B2 (en) * 2016-09-29 2021-11-02 花王株式会社 Abrasive liquid composition
CN111094481A (en) * 2017-09-15 2020-05-01 嘉柏微电子材料股份公司 Composition for tungsten chemical mechanical polishing
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
JP7045171B2 (en) * 2017-11-28 2022-03-31 花王株式会社 Abrasive liquid composition
CN109971357B (en) * 2017-12-27 2021-12-07 安集微电子（上海）有限公司 Chemical mechanical polishing solution
CN108913038A (en) * 2018-06-27 2018-11-30 东莞市金林自动化机械科技有限公司 A kind of polishing fluid and preparation method thereof for gold
CN114599750A (en) * 2019-10-22 2022-06-07 Cmc材料股份有限公司 Compositions and methods for chemical mechanical polishing of silicon oxides and carbon-doped silicon oxides
WO2021081148A1 (en) * 2019-10-22 2021-04-29 Cmc Materials, Inc. Composition and method for dielectric cmp
EP4087904A4 (en) * 2020-01-07 2023-12-06 CMC Materials, Inc. Derivatized polyamino acids

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000109810A (en) * 1998-10-08 2000-04-18 Hitachi Chem Co Ltd Polishing agent for cmp and polishing of substrate
JP4744656B2 (en) * 1998-10-08 2011-08-10 日立化成工業株式会社 CMP polishing agent and substrate polishing method
US6319096B1 (en) * 1999-11-15 2001-11-20 Cabot Corporation Composition and method for planarizing surfaces
JP2002110596A (en) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp Polishing agent for semiconductor processing, dispersant used therefor, and method of manufacturing semiconductor device using the same polishing agent
US7279119B2 (en) * 2001-06-14 2007-10-09 Ppg Industries Ohio, Inc. Silica and silica-based slurry
US20030211747A1 (en) * 2001-09-13 2003-11-13 Nyacol Nano Technologies, Inc Shallow trench isolation polishing using mixed abrasive slurries
KR100511943B1 (en) * 2003-05-22 2005-09-01 한화석유화학 주식회사 Concentrate of fine cerium oxide particles for chemical mechanical polishing and preparing method thereof
KR100637772B1 (en) * 2004-06-25 2006-10-23 제일모직주식회사 High Selectivity CMP slurry for STI Process in Semiconductor manufacture
KR100548132B1 (en) * 2004-07-02 2006-02-02 삼성전자주식회사 Apparatus for correcting DC offset in receiver of multiband-hopping communication system and method thereof
EP2410558A3 (en) * 2005-11-11 2012-04-18 Hitachi Chemical Co., Ltd. Polishing slurry for silicon oxide, additive liquid and polishing method
US20090156006A1 (en) * 2006-05-02 2009-06-18 Sriram Anjur Compositions and methods for cmp of semiconductor materials
JP2008277723A (en) * 2007-03-30 2008-11-13 Fujifilm Corp Metal-polishing liquid and polishing method
CN101463227B (en) * 2007-12-21 2013-06-12 安集微电子（上海）有限公司 Chemico-mechanical polishing solution for barrier layer
JPWO2009119485A1 (en) * 2008-03-28 2011-07-21 日立化成工業株式会社 Polishing liquid for metal and polishing method using this polishing liquid
CN107199502A (en) * 2008-04-23 2017-09-26 日立化成株式会社 Grinding agent, grinding agent component and the substrate Ginding process using the grinding agent
EP2289667B1 (en) * 2008-06-11 2019-06-26 Shin-Etsu Chemical Co., Ltd. Polishing agent for synthetic quartz glass substrate
CN102268224B (en) * 2010-06-01 2013-12-04 中国科学院上海微系统与信息技术研究所 Chemical mechanical polishing liquid with controllable silicon oxide removal rate
MY170196A (en) * 2010-09-08 2019-07-09 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices
JP2012146975A (en) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd Polishing solution and substrate polishing method using polishing solution
CN103764775B (en) * 2011-09-07 2016-05-18 巴斯夫欧洲公司 Chemically mechanical polishing (CMP) composition that comprises glycosides

Also Published As

Publication number Publication date
WO2015114489A1 (en) 2015-08-06
US20170166778A1 (en) 2017-06-15
CN105934487B (en) 2018-10-26
CN105934487A (en) 2016-09-07
JP2017508833A (en) 2017-03-30
KR20160114709A (en) 2016-10-05
EP3099756A4 (en) 2017-08-02
IL246916A0 (en) 2016-09-29
TW201538700A (en) 2015-10-16
EP3099756A1 (en) 2016-12-07

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