JP2017191857A - 電子装置及びその製造方法 - Google Patents
電子装置及びその製造方法 Download PDFInfo
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- JP2017191857A JP2017191857A JP2016080578A JP2016080578A JP2017191857A JP 2017191857 A JP2017191857 A JP 2017191857A JP 2016080578 A JP2016080578 A JP 2016080578A JP 2016080578 A JP2016080578 A JP 2016080578A JP 2017191857 A JP2017191857 A JP 2017191857A
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- solder
- back surface
- oxide film
- sealing resin
- metal thin
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Abstract
【解決手段】半導体装置10は、半導体チップ12、半導体チップを封止する封止樹脂体11、延設部191を有する第2ヒートシンク19H、封止樹脂体の内部で、はんだ21を介して延設部と接続された継手部16、継手部が連なる第1ヒートシンク14Lを備える。第2ヒートシンクは、金属製の基材と、裏面191b側の基材表面に形成された皮膜を有する。皮膜は、基材の表面に形成された金属薄膜と、金属薄膜上に形成され、金属薄膜の主成分の金属と同じ金属の酸化物よりなる凹凸酸化膜191fを有する。凹凸酸化膜は、はんだの接続領域194の裏面部分194aに形成されている。
【選択図】図4
Description
先ず、図1に基づき、半導体装置が適用される電力変換装置の一例について説明する。
本実施形態は、先行実施形態を参照できる。このため、先行実施形態に示した半導体装置10及びその製造方法と共通する部分についての説明は省略する。
本実施形態は、先行実施形態を参照できる。このため、先行実施形態に示した半導体装置10及びその製造方法と共通する部分についての説明は省略する。図14は平面図であるが、明確化のため、凹凸酸化膜191fにハッチングを施している。
本実施形態は、先行実施形態を参照できる。このため、先行実施形態に示した半導体装置10及びその製造方法と共通する部分についての説明は省略する。図15は平面図であるが、明確化のため、凹凸酸化膜191fにハッチングを施している。
Claims (10)
- 電子部品(12)と、
前記電子部品を封止する封止樹脂体(11)と、
少なくとも一部が前記封止樹脂体の内部に配置された第1部材(19)と、
前記封止樹脂体の内部において、はんだ(21,22)を介して前記第1部材と接続された第2部材(16,25)と、
を備え、
前記第1部材は、金属材料を用いて形成された基材(191c)と、前記基材の表面のうち、少なくとも前記第1部材における前記第2部材との対向面(191a)と反対の裏面(191b)側の表面上に形成された皮膜(191d)と、を有し、
前記皮膜は、前記基材の表面に形成された金属薄膜(191e)と、前記金属薄膜上に形成され、前記金属薄膜の主成分の金属と同じ金属の酸化物よりなる凹凸酸化膜(191f)と、を有し、
前記凹凸酸化膜は、前記第1部材の裏面において、前記第1部材、前記はんだ、及び前記第2部材の積層方向からの投影視で前記第1部材の対向面における前記はんだが接続される接続領域(194)の全域と少なくとも重なるように形成されている電子装置。 - 前記積層方向において、前記封止樹脂体の厚みは、前記第2部材における前記第1部材との対向面(16a,25a)と反対の裏面(16b,25b)を覆う部分よりも、前記第1部材の裏面(191b)を覆う部分のほうが薄くされている請求項1に記載の電子装置。
- 前記電子装置は、三相インバータを構成する3組の上下アームのうちの1組をなしており、
前記電子部品は、前記積層方向における一面(12a)及び前記一面と反対の裏面(12b)に電極(13a,13b)がそれぞれ形成された半導体チップ(12)であり、
前記半導体チップは、上アームをなす上アームチップ(12H)と、下アームをなし、お互いの前記一面が前記積層方向において同じ側となるように、前記積層方向に直交する直交方向において前記上アームチップに並んで配置された下アームチップ(12L)と、を有し、
前記電子装置は、
前記半導体チップの熱を放熱させるために、前記積層方向において前記半導体チップを個別に挟むように配置される一対のヒートシンクであって、前記積層方向において前記一面側に配置され、前記一面の電極と電気的に接続された第1ヒートシンク(14)、及び、前記積層方向において前記裏面側に配置され、前記裏面の電極と電気的に接続された本体部(190)と、前記本体部から前記直交方向に延設された延設部(191)と、を含む前記第1部材としての第2ヒートシンクと、
前記延設部と前記積層方向において対向するように前記延設部に対して前記半導体チップ側に配置され、前記はんだを介して前記延設部と電気的に接続された前記第2部材として、前記上アーム及び前記下アームのうちの一方の前記延設部に接続された継手部(16)、及び、他方の前記延設部に接続された主端子(25)と、を備える請求項1又は請求項2に記載の電子装置。 - 前記第1部材は、前記対向面に形成され、前記接続領域を取り囲む溝部(195)と、前記溝部に対応して前記裏面に形成された位置基準部としての突起部(196)と、を有する請求項1〜3いずれか1項に記載の電子装置。
- 前記第1部材は、前記対向面に形成され、前記接続領域を取り囲む第1溝部(195)と、前記第1溝部に対応して前記裏面に形成された位置基準部としての第2溝部(197)と、を有する請求項1〜3いずれか1項に記載の電子装置。
- 前記凹凸酸化膜は、前記第1部材の裏面において、前記位置基準部に形成されている請求項4又は請求項5に記載の電子装置。
- 前記凹凸酸化膜は、前記第1部材の裏面の全面に形成されている請求項1〜6いずれか1項に記載の電子装置。
- 前記金属薄膜は、前記凹凸酸化膜が形成された部分の表面に複数の凹部(191g)を有する請求項1〜7いずれか1項に記載の電子装置。
- 前記金属薄膜において、前記凹凸酸化膜が形成された部分の平均膜厚が、前記凹凸酸化膜が形成されていない部分の平均膜厚よりも薄くなっている請求項1〜8いずれか1項に記載の電子装置。
- 電子部品(12)と、
前記電子部品を封止する封止樹脂体(11)と、
少なくとも一部が前記封止樹脂体の内部に配置された第1部材(19)と、
前記封止樹脂体の内部において、はんだ(21,22)を介して前記第1部材と接続された第2部材(16,25)と、
を備え、
前記第1部材は、金属材料を用いて形成された基材(191c)と、前記基材の表面のうち、少なくとも前記第1部材における前記第2部材との対向面(191a)と反対の裏面(191b)側の表面上に形成された皮膜(191d)と、を有し、
前記皮膜は、前記基材の表面に形成された金属薄膜(191e)と、前記金属薄膜上に形成され、前記金属薄膜の主成分の金属と同じ金属の酸化物よりなる凹凸酸化膜(191f)と、を有し、
前記凹凸酸化膜は、前記第1部材の裏面において、前記第1部材、前記はんだ、及び前記第2部材の積層方向からの投影視で前記第1部材の対向面における前記はんだが接続される接続領域(194)の全域と少なくとも重なるように形成されている電子装置の製造方法であって、
前記金属薄膜が形成された前記基材を準備し、
前記金属薄膜の表面のうち、前記第1部材の裏面側の表面における前記接続領域の裏面部分全域を少なくとも含むようにパルス発振のレーザ光を照射して、前記凹凸酸化膜を形成し、
前記はんだを介して、前記第1部材と前記第2部材とを接続し、
前記凹凸酸化膜を形成し、且つ、前記第1部材と前記第2部材とを接続した後、前記封止樹脂体を成形し、
前記封止樹脂体の成形後、超音波探傷装置(33)を用い、前記積層方向において前記第1部材側から前記はんだを検査する電子装置の製造方法。
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