JP2017168868A - 半導体素子 - Google Patents
半導体素子 Download PDFInfo
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- JP2017168868A JP2017168868A JP2017118556A JP2017118556A JP2017168868A JP 2017168868 A JP2017168868 A JP 2017168868A JP 2017118556 A JP2017118556 A JP 2017118556A JP 2017118556 A JP2017118556 A JP 2017118556A JP 2017168868 A JP2017168868 A JP 2017168868A
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- Prior art keywords
- semiconductor
- semiconductor element
- semiconductor substrate
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 55
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Classifications
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- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
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- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76891—Four-Phase CCD
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Abstract
Description
Claims (9)
- 半導体基板面をX−Y平面、該半導体基板の厚さ方向をZ軸と定義した場合、前記半導体基板面上に集積回路が形成され、かつX−Y平面視座上同一の四角形状の半導体素子をn枚(nは2以上の整数)前記Z軸方向に電気的接続手段を介し積層した積層半導体素子であって、前記半導体素子の前記Z軸に平行な一側面部がシリコン酸化膜で被覆され、かつ前記Z軸と平行な他の三側面部は前記半導体基板が露出している積層半導体素子。
- 半導体基板面をX−Y平面、該半導体基板の厚さ方向をZ軸と定義した場合、前記半導体基板面上に集積回路が形成され、かつX−Y平面視座上同一の四角形状の半導体素子をn枚(nは2以上の整数)前記Z軸方向に電気的接続手段を介し積層した積層半導体素子であって、前記半導体素子の前記Z軸に平行な一側面部がシリコン酸化膜で被覆され、かつ前記一側面部の前記X−Y平面視座上における形状が凸又は凹状に湾曲している積層半導体素子。
- 半導体基板面をX−Y平面、該半導体基板の厚さ方向をZ軸と定義した場合、前記半導体基板面上に集積回路が形成され、かつX−Y平面視座上同一の四角形状の半導体素子をn枚(nは2以上の整数)前記Z軸方向に電気的接続手段を介し積層した積層半導体素子であって、前記半導体素子の前記Z軸に平行な一側面部がシリコン酸化膜で被覆され、かつ貫通電極が前記Z軸と平行な他の三側面部に沿って前記半導体素子の周辺部に配置されている積層半導体素子。
- 積層半導体素子を構成する1又は2以上の前記半導体素子の前記シリコン酸化膜で被覆された側面部に受光窓を有し、該受光窓側から前記半導体基板内部に向かって光電変換領域が形成されている請求項1乃至請求項3のいずれか一項に記載の積層半導体素子。
- 半導体基板の裏面に遮光膜を積層した請求項4に記載の積層半導体素子。
- 受光窓の上部にカラーフィルタ又はシンチレータを積層した請求項4又は請求項5に記載の積層半導体素子。
- 半導体基板面をX−Y平面、該半導体基板の厚さ方向をZ軸と定義した場合、半導体基板面上に集積回路が形成され、かつX−Y平面視座上同一の円形形状の半導体素子をn枚(nは2以上の整数)前記Z軸方向に電気的接続手段を介し積層した積層半導体素子であって、該積層半導体素子のZ軸方向の側面部を構成する前記n枚の半導体素子のZ軸方向における側面部がシリコン酸化膜により被覆され、かつ前記シリコン酸化膜で被覆された側面部上に複数の受光窓を有する光電変換領域が前記X−Y平面視座上、放射状に形成されている積層半導体素子。
- 環状の電荷増倍電荷転送路有する請求項7に記載の積層半導体素子。
- 貫通電極が前記X−Y平面視座上、前記半導体素子の中心部に配置されている請求項7又は請求項8に記載の積層半導体素子。
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US11024606B2 (en) | 2021-06-01 |
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