JP2015531162A - 電磁波検知器アセンブリを備える装置およびそのような装置のアセンブリの配置 - Google Patents
電磁波検知器アセンブリを備える装置およびそのような装置のアセンブリの配置 Download PDFInfo
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- JP2015531162A JP2015531162A JP2015520787A JP2015520787A JP2015531162A JP 2015531162 A JP2015531162 A JP 2015531162A JP 2015520787 A JP2015520787 A JP 2015520787A JP 2015520787 A JP2015520787 A JP 2015520787A JP 2015531162 A JP2015531162 A JP 2015531162A
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- 239000011159 matrix material Substances 0.000 claims abstract description 167
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 15
- 238000010586 diagram Methods 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 7
- 230000000295 complement effect Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000007689 inspection Methods 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 description 20
- 238000005520 cutting process Methods 0.000 description 10
- 230000005855 radiation Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 210000000214 mouth Anatomy 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 2
- 238000011437 continuous method Methods 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment
- A61B6/42—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment with arrangements for detecting radiation specially adapted for radiation diagnosis
- A61B6/4208—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment with arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector
- A61B6/4233—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment with arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector using matrix detectors
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
- A61B1/042—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances characterised by a proximal camera, e.g. a CCD camera
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/74—Circuitry for scanning or addressing the pixel array
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/555—Constructional details for picking-up images in sites, inaccessible due to their dimensions or hazardous conditions, e.g. endoscopes or borescopes
Abstract
Description
Claims (9)
- 電磁波検知器アセンブリを備える装置、とりわけ、特に内視鏡または小型監視カメラに用いられるイメージセンサであって、このセンサが、検査領域の画像を提供するように配列された画素マトリクスを備え、検査領域の形状が前記C型マトリクスの立体形状にほぼ一致し、検知器が、アドレス指定図を介して前記マトリクスの行および列に沿ってアドレス指定されて、検知セルの前記マトリクスの各セルを、前記マトリクスの外周に配置された1つまたは複数の読み出し回路に接続することができる、装置において、
該装置が、互いに直交する行および列に沿って構造化された光検知セルマトリクスであって、多角形であり、その輪郭が、閉鎖した線に内接する少なくとも5つの辺を有し、直交する縁および斜めの縁を有するマトリクスで構成され、行および列に沿ってアドレス指定するシステムによって、各光検知セルを電圧または電流読み出し回路に直接接続できることを特徴とするとともに、斜めにカットされた単位セルの縁の断面が増大することを利用して、行および列を斜めの縁に沿ってアドレス指定する回路が互い違いに置かれるか、あるいは、斜めの縁に沿ってアドレス指定する回路が交互に配置されるが高さが低くなり、同回路が斜めにカットされた縁のセルに沿って配置された場合にその幅が長くなってよいことを特徴とする、装置。 - 前記閉鎖した線は、円形であることを特徴とする、請求項1に記載の装置。
- 前記閉鎖した線は、楕円形であることを特徴とする、請求項1に記載の装置。
- 前記センサの画素マトリクスに一致している、直交する行および列のアドレス指定要素は、行および列のアドレス指定手段を備え、該手段は、前記マトリクスの多角形の輪郭の辺の少なくとも一部に沿って配置された要素を備えることを特徴とする、請求項1に記載の装置。
- 画素マトリクスの少なくとも1つの斜めの縁に沿って配置された行および列の前記アドレス指定手段の要素は、前記センサの画素マトリクスの直交する縁に沿って配置された要素よりも幅が狭いことを特徴とする、請求項4に記載の装置。
- 行および列の前記アドレス指定手段の要素は、行および列のアドレス指定を、マトリクスを介して対面する縁どうしの間に分割してマトリクスの全縁に沿って配置されることを特徴とする、請求項4に記載の装置。
- 断面がほぼ円形の内視鏡チューブに取り付けられ、少なくとも1つの円形レンズを備える光学系に接続されることを特徴とする、請求項4に記載の装置。
- CMOS(相補型金属酸化膜半導体)技術で作製されることを特徴とする、請求項1〜7のうちいずれか一項に記載の装置。
- 前記装置のアセンブリは製造基板上に作製され、前記装置は八角形であり、該装置は、直線のみで切断されてよいように間隔をあけて配置され、その直線どうしの間が45度のみであることを特徴とする、請求項1〜8のうちいずれか一項に記載の装置のアセンブリを製造するための配置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1062/12 | 2012-07-10 | ||
CH01062/12A CH706734B1 (fr) | 2012-07-10 | 2012-07-10 | Dispositif comportant un ensemble de détecteurs sensibles à une radiation électromagnétique et tube d'endoscope équipé d'un tel dispositif. |
PCT/CH2013/000123 WO2014008615A1 (fr) | 2012-07-10 | 2013-07-10 | Dispositif comportant un ensemble de detecteurs sensibles a une radiation electromagnetique et arrangement d'un ensemble de tels dispositifs |
Publications (2)
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JP2015531162A true JP2015531162A (ja) | 2015-10-29 |
JP6195134B2 JP6195134B2 (ja) | 2017-09-13 |
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JP2015520787A Active JP6195134B2 (ja) | 2012-07-10 | 2013-07-10 | 電磁波検知器アセンブリを備える装置およびそのような装置のアセンブリの配置 |
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Country | Link |
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US (1) | US9509930B2 (ja) |
EP (1) | EP2872027B1 (ja) |
JP (1) | JP6195134B2 (ja) |
CA (1) | CA2878592C (ja) |
CH (1) | CH706734B1 (ja) |
WO (1) | WO2014008615A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JPWO2016114377A1 (ja) * | 2015-01-16 | 2017-04-27 | 雫石 誠 | 半導体素子とその製造方法 |
Families Citing this family (3)
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KR102422224B1 (ko) | 2015-07-31 | 2022-07-18 | 삼성전자주식회사 | 적층형 이미지 센서 및 이를 포함하는 시스템 |
CN111952327A (zh) * | 2020-08-14 | 2020-11-17 | 北京高芯惠通医疗科技有限公司 | 一种用于医用内窥镜的cmos图像传感器芯片及设计方法 |
CN112310243B (zh) * | 2020-09-16 | 2022-07-26 | 韩华新能源(启东)有限公司 | 适用于切割不良电池片串焊时的定位方法及串焊方法 |
Citations (4)
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JP2009500053A (ja) * | 2005-07-01 | 2009-01-08 | ウードゥヴェ セミコンダクターズ | コーナーカットを有する画像センサ |
JP2009513166A (ja) * | 2003-07-01 | 2009-04-02 | ウードゥヴェ セミコンダクターズ | 人間工学的な画像記録装置 |
JP2010273757A (ja) * | 2009-05-27 | 2010-12-09 | Zycube:Kk | イメージセンサ応用装置 |
JP2011523524A (ja) * | 2008-04-30 | 2011-08-11 | ウードゥヴェ セミコンダクターズ | 面取りされた角部を備えると共に隣り合う画素行の間にマルチプレクサを有する画像センサ |
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JP3003944B2 (ja) * | 1990-10-04 | 2000-01-31 | オリンパス光学工業株式会社 | 固体撮像素子 |
US7009645B1 (en) * | 1999-09-30 | 2006-03-07 | Imec Vzw | Constant resolution and space variant sensor arrays |
ATE300832T1 (de) * | 2001-05-05 | 2005-08-15 | Manfred Dr Pfeiffer | Gerät zur bilderfassung im oralbereich, insbesondere zur zahnmedizinischen diagnose |
US7451906B2 (en) | 2001-11-21 | 2008-11-18 | Dana Canada Corporation | Products for use in low temperature fluxless brazing |
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- 2012-07-10 CH CH01062/12A patent/CH706734B1/fr not_active IP Right Cessation
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- 2013-07-10 US US14/412,215 patent/US9509930B2/en active Active
- 2013-07-10 WO PCT/CH2013/000123 patent/WO2014008615A1/fr active Application Filing
- 2013-07-10 CA CA2878592A patent/CA2878592C/fr active Active
- 2013-07-10 EP EP13747336.9A patent/EP2872027B1/fr active Active
- 2013-07-10 JP JP2015520787A patent/JP6195134B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009513166A (ja) * | 2003-07-01 | 2009-04-02 | ウードゥヴェ セミコンダクターズ | 人間工学的な画像記録装置 |
JP2009500053A (ja) * | 2005-07-01 | 2009-01-08 | ウードゥヴェ セミコンダクターズ | コーナーカットを有する画像センサ |
JP2011523524A (ja) * | 2008-04-30 | 2011-08-11 | ウードゥヴェ セミコンダクターズ | 面取りされた角部を備えると共に隣り合う画素行の間にマルチプレクサを有する画像センサ |
JP2010273757A (ja) * | 2009-05-27 | 2010-12-09 | Zycube:Kk | イメージセンサ応用装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2016114377A1 (ja) * | 2015-01-16 | 2017-04-27 | 雫石 誠 | 半導体素子とその製造方法 |
JP2017168868A (ja) * | 2015-01-16 | 2017-09-21 | 雫石 誠 | 半導体素子 |
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Publication number | Publication date |
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JP6195134B2 (ja) | 2017-09-13 |
EP2872027B1 (fr) | 2020-11-11 |
US9509930B2 (en) | 2016-11-29 |
WO2014008615A1 (fr) | 2014-01-16 |
CA2878592C (fr) | 2020-08-04 |
CH706734A1 (fr) | 2014-01-15 |
EP2872027A1 (fr) | 2015-05-20 |
CA2878592A1 (fr) | 2014-01-16 |
CH706734B1 (fr) | 2017-09-29 |
US20150229860A1 (en) | 2015-08-13 |
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