JP2017120782A - 有機発光表示装置及びその製造方法 - Google Patents
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Abstract
【解決手段】有機発光表示装置及びその製造方法は、基板上に配置される薄膜トランジスタと;その薄膜トランジスタと接続される発光素子と;発光素子のアノード電極及びカソード電極のいずれか一つと接続される補助上部電極と;補助上部電極と接続される補助下部電極とを含み、補助下部電極は基板のトレンチ内に埋め込まれることにより、構造安全性を確保することができる。
【選択図】 図1
Description
134 発光層
136 カソード電極
138 バンク
122 耐熱バッファー層
162 補助下部電極
164 補助中間電極
166 補助上部電極
Claims (9)
- 多数のトレンチを有する基板と;
前記基板上に配置される薄膜トランジスタと;
前記薄膜トランジスタと接続される発光素子と;
前記発光素子のアノード電極及びカソード電極のいずれか一つと接続される補助上部電極と;
前記トレンチ内に埋め込まれ、前記補助上部電極と接続される補助下部電極とを含む、有機発光表示装置。 - 前記薄膜トランジスタと重畳する領域に配置され、前記トレンチ内に埋め込まれる遮光層と;
前記遮光層と前記薄膜トランジスタの間に順次積層される第1バッファー膜、耐熱バッファー層及び第2バッファー膜とをさらに含む、請求項1に記載の有機発光表示装置。 - 前記耐熱バッファー層は、第1及び第2バッファー膜より誘電率が低い有機膜素材で形成される、請求項2に記載の有機発光表示装置。
- 前記補助下部電極上部に位置する信号リンクと、
前記信号リンクと接続される信号パッドとをさらに含み、
前記補助下部電極と前記信号リンクの間には前記第1バッファー膜、前記耐熱バッファー層及び前記第2バッファー膜が順次積層され、
前記信号パッドは、
前記トレンチ内に埋め込まれるパッド下部電極と;
前記第1バッファー膜及び層間絶縁膜を貫通するパッドコンタクトホールを通じて露出する前記パッド下部電極と接続されるパッド上部電極とを含む、請求項3に記載の有機発光表示装置。 - 前記トレンチ内に埋め込まれるか前記基板上に配置されるアラインキーをさらに含む、請求項4に記載の有機発光表示装置。
- 補助下部電極が埋め込まれた多数のトレンチを有する基板を用意する段階と;
前記補助下部電極が形成された基板上に薄膜トランジスタを形成する段階と;
前記薄膜トランジスタと接続されるアノード電極及び前記補助下部電極と接続される補助上部電極を形成する段階と;
前記アノード電極上に有機発光層を形成する段階と;
前記有機発光層上にカソード電極を形成する段階とを含む、有機発光表示装置の製造方法。 - 前記補助下部電極が埋め込まれた多数のトレンチを有する基板を用意する段階は、
前記基板上にフォトレジストパターンを形成する段階と;
前記フォトレジストパターンを用いる前記基板の食刻工程によって前記多数のトレンチを形成する段階と;
前記フォトレジストパターンが残存する基板の全面上にシード金属を蒸着する段階と;
前記フォトレジストパターン及び前記フォトレジストパターン上のシード金属を除去する段階と;
前記シード金属を成長させることで、前記トレンチ内に埋め込まれる前記補助下部電極及びアラインキーを形成する段階とを含む、請求項6に記載の有機発光表示装置の製造方法。 - 前記補助下部電極が埋め込まれた多数のトレンチを有する基板を用意する段階は、
前記基板上に不透明金属層を形成し、その不透明金属層上に多段フォトレジストパターンを形成する段階と;
前記多段フォトレジストパターンを用いる前記基板及び前記不透明金属層の食刻工程で前記多数のトレンチを形成する段階と;
前記多段フォトレジストパターンをアッシングする段階と;
前記アッシングされたフォトレジストパターンを用いる前記不透明金属層の食刻工程でアラインキーを形成する段階と;
前記アラインキーが形成された基板のトレンチ内に埋め込まれる前記補助下部電極を形成する段階とを含む、請求項6に記載の有機発光表示装置の製造方法。 - 前記薄膜トランジスタと重畳する領域に配置され、前記トレンチ内に埋め込まれる遮光層を前記補助下部電極と同時に形成する段階と;
前記遮光層、前記補助下部電極及びアラインキーが形成された基板上に第1バッファー膜を形成する段階と;
前記第1バッファー膜上に前記遮光層と重畳する耐熱バッファー層、第2バッファー膜及び前記薄膜トランジスタの半導体層を形成すると同時に前記補助下部電極と重畳する耐熱バッファー層及び第2バッファー膜を形成する段階と;
前記薄膜トランジスタの半導体層上にゲート絶縁パターン及び薄膜トランジスタのゲート電極を形成する段階と;
前記薄膜トランジスタのゲート電極上に層間絶縁膜を形成する段階と;
前記層間絶縁膜上に前記薄膜トランジスタのソース及びドレイン電極と信号リンクを形成する段階とをさらに含む、請求項7又は8に記載の有機発光表示装置の製造方法。
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JP2009124152A (ja) * | 2007-11-14 | 2009-06-04 | Samsung Electronics Co Ltd | アレイ基板及びこれの製造方法 |
JP2009271188A (ja) * | 2008-05-01 | 2009-11-19 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置とその製造方法 |
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WO2020044170A1 (ja) * | 2018-08-29 | 2020-03-05 | 株式会社半導体エネルギー研究所 | 表示パネル、表示装置、入出力装置、情報処理装置 |
JP7411554B2 (ja) | 2018-08-29 | 2024-01-11 | 株式会社半導体エネルギー研究所 | 表示パネル、表示装置、入出力装置、情報処理装置 |
US11968863B2 (en) | 2018-08-29 | 2024-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, display device, input/output device, and data processing device |
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US20170186831A1 (en) | 2017-06-29 |
EP3188274A1 (en) | 2017-07-05 |
KR102458907B1 (ko) | 2022-10-25 |
EP3188274B1 (en) | 2019-04-03 |
US10050098B2 (en) | 2018-08-14 |
KR20170078175A (ko) | 2017-07-07 |
US10504985B2 (en) | 2019-12-10 |
JP6348166B2 (ja) | 2018-06-27 |
CN107039491A (zh) | 2017-08-11 |
CN107039491B (zh) | 2020-10-09 |
US20180331169A1 (en) | 2018-11-15 |
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