JP2017112538A - 光結合装置 - Google Patents
光結合装置 Download PDFInfo
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- JP2017112538A JP2017112538A JP2015246460A JP2015246460A JP2017112538A JP 2017112538 A JP2017112538 A JP 2017112538A JP 2015246460 A JP2015246460 A JP 2015246460A JP 2015246460 A JP2015246460 A JP 2015246460A JP 2017112538 A JP2017112538 A JP 2017112538A
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- 230000008878 coupling Effects 0.000 title claims abstract description 43
- 238000010168 coupling process Methods 0.000 title claims abstract description 43
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 43
- 230000003287 optical effect Effects 0.000 title claims abstract description 39
- 238000012986 modification Methods 0.000 description 17
- 230000004048 modification Effects 0.000 description 17
- 238000010586 diagram Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 5
- 238000009434 installation Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/30—Marginal testing, e.g. by varying supply voltage
- G01R31/3004—Current or voltage test
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/40—Thermal components
- H02S40/44—Means to utilise heat energy, e.g. hybrid systems producing warm water and electricity at the same time
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/31728—Optical aspects, e.g. opto-electronics used for testing, optical signal transmission for testing electronic circuits, electro-optic components to be tested in combination with electronic circuits, measuring light emission of digital circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/60—Thermal-PV hybrids
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Automation & Control Theory (AREA)
- General Engineering & Computer Science (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Electronic Switches (AREA)
Abstract
Description
前記複数の発光素子にそれぞれ対向する複数の受光素子と、
前記複数の受光素子と電気的に接続されている複数のMOSトランジスタと、
前記複数のMOSトランジスタのドレイン同士が共通に接続されている端子と、
を備える光結合装置が提供される。
図1は、第1の実施形態に係る光結合装置の内部構成を示す平面図である。図1では、本実施形態に係る光結合装置1が、半導体デバイスのテスターに適用されている。また、図2は、第1の実施形態に係る光結合装置1の回路図である。
図5は、第1の実施形態の変形例1に係る光結合装置の内部構成を示す平面図である。図5では、上述した第1の実施形態と同様の構成要素については、同じ符号を付し、詳細な説明は省略する。
図6は、第1の実施形態の変形例2に係る光結合装置の内部構成を示す平面図である。また、図7は、変形例2に係る光結合装置の回路図である。図6および図7において、上述した第1の実施形態と同様の構成要素については、同じ符号を付し、詳細な説明は省略する。
図8は、第2の実施形態に係る光結合装置の内部構成を示す平面図である。また、図9は、第2の実施形態に係る光結合装置の回路図である。図8とおよび図9では、上述した第1の実施形態と同様の構成要素については、同じ符号を付し、詳細な説明は省略する。
Claims (5)
- 複数の発光素子と、
前記複数の発光素子にそれぞれ対向する複数の受光素子と、
前記複数の受光素子と電気的に接続されている複数のMOSトランジスタと、
前記複数のMOSトランジスタのドレイン同士が共通に接続されている端子と、
を備える光結合装置。 - 前記複数の発光素子が、第1の発光素子と、前記第1の発光素子の隣に配置されている第2の発光素子と、前記第2の発光素子に対して前記第1の発光素子とは反対側の隣に配置されている第3の発光素子と、を備え、
前記複数の受光素子が、前記第1の発光素子に対向する第1の受光素子と、前記第2の発光素子に対向する第2の受光素子と、前記第3の発光素子に対向する第3の受光素子と、を備え、
前記複数のMOSトランジスタが、前記第1の受光素子と電気的に接続されている第1のMOSトランジスタと、前記第2の受光素子に電気的に接続されている第2のMOSトランジスタと、前記第3の受光素子に電気的に接続されている第3のMOSトランジスタと、を備える、請求項1に記載の光結合装置。 - 前記第2のMOSトランジスタおよび前記第3のMOSトランジスタが、1つのチップに設けられている、請求項2に記載の光結合装置。
- 前記複数の発光素子が、第1の発光素子と、前記第1の発光素子の隣に配置されている第2の発光素子と、を備え、
前記複数の受光素子が、前記第1の発光素子に対向する第1の受光素子と、前記第2の発光素子に対向する第2の受光素子と、を備え、
前記複数のMOSトランジスタが、前記第1の受光素子と電気的に接続されている第1のMOSトランジスタと、前記第2の受光素子に電気的に接続されている第2のMOSトランジスタと、前記第2のMOSトランジスタとともに1つのチップに設けられ、前記第2の受光素子に電気的に接続されている第3のMOSトランジスタと、を備える、請求項1に記載の光結合装置。 - 前記複数の発光素子が、第1の発光素子と、前記第1の発光素子の隣に配置されている第2の発光素子と、を備え、
前記複数の受光素子が、前記第1の発光素子に対向する第1の受光素子と、前記第2の発光素子に対向する第2の受光素子と、を備え、
前記複数のMOSトランジスタが、前記第1の受光素子と電気的に接続されている第1のMOSトランジスタと、前記第2の受光素子に電気的に接続されている第2のMOSトランジスタと、を備える、請求項1に記載の光結合装置。
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JP2015246460A JP6402091B2 (ja) | 2015-12-17 | 2015-12-17 | 光結合装置 |
US15/231,319 US10107857B2 (en) | 2015-12-17 | 2016-08-08 | Optical coupling device |
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JP2015246460A JP6402091B2 (ja) | 2015-12-17 | 2015-12-17 | 光結合装置 |
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JP2017112538A true JP2017112538A (ja) | 2017-06-22 |
JP6402091B2 JP6402091B2 (ja) | 2018-10-10 |
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Cited By (1)
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JP2020035810A (ja) * | 2018-08-28 | 2020-03-05 | 株式会社東芝 | 半導体装置 |
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JP6402091B2 (ja) * | 2015-12-17 | 2018-10-10 | 株式会社東芝 | 光結合装置 |
JP7273741B2 (ja) * | 2020-02-07 | 2023-05-15 | 株式会社東芝 | 光結合装置及び高周波装置 |
JP7216678B2 (ja) * | 2020-02-10 | 2023-02-01 | 株式会社東芝 | 光結合装置 |
JP7413217B2 (ja) * | 2020-09-17 | 2024-01-15 | 株式会社東芝 | 半導体装置 |
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JP2007140924A (ja) * | 2005-11-18 | 2007-06-07 | Hitachi Computer Peripherals Co Ltd | 接点信号送受信装置 |
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2015
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2016
- 2016-08-08 US US15/231,319 patent/US10107857B2/en active Active
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JPH02174419A (ja) * | 1988-12-27 | 1990-07-05 | Nec Corp | ソリッドステートリレー回路 |
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Cited By (3)
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JP2020035810A (ja) * | 2018-08-28 | 2020-03-05 | 株式会社東芝 | 半導体装置 |
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JP7002424B2 (ja) | 2018-08-28 | 2022-01-20 | 株式会社東芝 | 半導体装置 |
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US20170176519A1 (en) | 2017-06-22 |
US10107857B2 (en) | 2018-10-23 |
JP6402091B2 (ja) | 2018-10-10 |
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