JP2017055009A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 155
- 239000012535 impurity Substances 0.000 claims abstract description 101
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10
- 230000015556 catabolic process Effects 0.000 abstract description 19
- 229910010271 silicon carbide Inorganic materials 0.000 description 40
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 36
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
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Abstract
Description
本実施形態の半導体装置は、第1の面と第2の面を有する半導体層の一部である素子領域と、半導体層の一部であり、素子領域を囲む終端領域と、第1の面に設けられた第1の電極と、第2の面に設けられた第2の電極と、半導体層内に設けられ、一部が第1の電極と接する第1導電型の第1の半導体領域と、素子領域内の第1の半導体領域と第1の電極との間に設けられた第2導電型の第2の半導体領域と、第2の半導体領域と第1の電極との間に設けられ、第1の電極と電気的に接続され、第2の半導体領域よりも第2導電型の不純物濃度の高い第2導電型の第3の半導体領域と、終端領域内の第1の半導体領域と第1の面との間に設けられ、第1の電極と電気的に接続され、第2の面との間の距離が、第2の面と第2の半導体領域との距離よりも大きい第2導電型の第4の半導体領域と、を備える。
本実施形態の半導体装置は、第5の半導体領域を備えない点以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については、記述を省略する。
12 アノード電極(第1の電極)
14 カソード電極(第2の電極)
18 n+型のカソード領域(第6の半導体領域)
20 n−型のドリフト領域(第1の半導体領域)
22 p型の第1のアノード領域(第2の半導体領域)
24 p+型の第2のアノード領域(第3の半導体領域)
26 p−型のリサーフ領域(第4の半導体領域)
28 p型領域(第5の半導体領域)
30 シリサイド層
100 JBS(半導体装置)
200 SBD(半導体装置)
Claims (13)
- 第1の面と第2の面を有する半導体層の一部である素子領域と、
前記半導体層の一部であり、前記素子領域を囲む終端領域と、
前記第1の面に設けられた第1の電極と、
前記第2の面に設けられた第2の電極と、
前記半導体層内に設けられ、一部が前記第1の電極と接する第1導電型の第1の半導体領域と、
前記素子領域内の前記第1の半導体領域と前記第1の電極との間に設けられた第2導電型の第2の半導体領域と、
前記第2の半導体領域と前記第1の電極との間に設けられ、前記第1の電極と電気的に接続され、前記第2の半導体領域よりも第2導電型の不純物濃度の高い第2導電型の第3の半導体領域と、
前記終端領域内の前記第1の半導体領域と前記第1の面との間に設けられ、前記第1の電極と電気的に接続され、前記第2の面との間の距離が、前記第2の面と前記第2の半導体領域との距離よりも大きい第2導電型の第4の半導体領域と、
を備える半導体装置。 - 前記第4の半導体領域の第2導電型の不純物濃度が、前記第2の半導体領域の第2導電型の不純物濃度よりも低い請求項1記載の半導体装置。
- 前記素子領域内に設けられ、前記第1の電極に電気的に接続され、前記第2の半導体領域よりも幅の狭い第2導電型の複数の第5の半導体領域を、更に、備える請求項1又は請求項2記載の半導体装置。
- 前記第2の面と前記第4の半導体領域との間の距離が、前記第2の面と前記第5の半導体領域との間の距離よりも大きい請求項3記載の半導体装置。
- 前記第2の面と前記第2の半導体領域との間の距離が、前記第2の面と前記第5の半導体領域との間の距離と略同一であり、前記第2の半導体領域の第2導電型の不純物濃度が、前記第5の半導体領域の第2導電型の不純物濃度と略同一である請求項3又は請求項4記載の半導体装置。
- 前記第5の半導体領域と前記第1の電極とが接する請求項3乃至請求項5いずれか一項記載の半導体装置。
- 前記第2の半導体領域上の前記第1の電極の一部が前記第1の半導体領域の間に挟まれた請求項1乃至請求項6いずれか一項記載の半導体装置。
- 前記第5の半導体領域上の前記第1の電極の一部が前記第1の半導体領域の間に挟まれた請求項1乃至請求項7いずれか一項記載の半導体装置。
- 前記第2の電極と前記第1の半導体領域との間に設けられ、前記第1の半導体領域よりも第1導電型の不純物濃度の高い第1導電型の第6の半導体領域を、更に備える請求項1乃至請求項8いずれか一項記載の半導体装置。
- 前記第1の半導体領域と前記第1の電極との間のコンタクトは、ショットキーコンタクトである請求項1乃至請求項9いずれか一項記載の半導体装置。
- 前記半導体層はSiC層である請求項1乃至請求項10いずれか一項記載の半導体装置。
- 前記第3の半導体領域と前記第1の電極との間に設けられたシリサイド層を、更に備える請求項1乃至請求項11いずれか一項記載の半導体装置。
- 第1の面と第2の面を有する半導体層の一部である素子領域と、
前記半導体層の一部であり、前記素子領域を囲む終端領域と、
前記第1の面に設けられた第1の電極と、
前記第2の面に設けられた第2の電極と、
前記半導体層内に設けられ、一部が前記第1の電極と接する第1導電型の第1の半導体領域と、
前記素子領域内の前記第1の半導体領域と前記第1の電極との間に設けられた第2導電型の第2の半導体領域と、
前記第2の半導体領域と前記第1の電極との間に設けられ、前記第1の電極と電気的に接続され、前記第2の半導体領域よりも第2導電型の不純物濃度の高い第2導電型の第3の半導体領域と、
前記終端領域内の前記第1の半導体領域と前記第1の面との間に設けられ、前記第1の電極と電気的に接続され、前記第1の面を基準とする深さが、前記第1の面を基準とする前記第2の半導体領域の深さよりも浅い第2導電型の第4の半導体領域と、
を備える半導体装置。
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JP2015179130A JP6400544B2 (ja) | 2015-09-11 | 2015-09-11 | 半導体装置 |
US15/062,202 US9577046B1 (en) | 2015-09-11 | 2016-03-07 | Semiconductor device |
CN201610130543.4A CN106531813B (zh) | 2015-09-11 | 2016-03-08 | 半导体装置 |
TW105107238A TWI596783B (zh) | 2015-09-11 | 2016-03-09 | Semiconductor device |
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JP2015179130A JP6400544B2 (ja) | 2015-09-11 | 2015-09-11 | 半導体装置 |
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JP6400544B2 JP6400544B2 (ja) | 2018-10-03 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019054193A (ja) * | 2017-09-19 | 2019-04-04 | 株式会社東芝 | 半導体装置 |
US10658467B2 (en) | 2018-09-19 | 2020-05-19 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2021145024A (ja) * | 2020-03-11 | 2021-09-24 | 株式会社東芝 | 半導体装置 |
JP2021153096A (ja) * | 2020-03-24 | 2021-09-30 | 株式会社東芝 | 半導体装置 |
JPWO2021019888A1 (ja) * | 2019-07-29 | 2021-11-25 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
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JP7410800B2 (ja) * | 2020-05-29 | 2024-01-10 | 株式会社東芝 | 半導体装置 |
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US20170077236A1 (en) | 2017-03-16 |
US9577046B1 (en) | 2017-02-21 |
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